Mitsubishi MGFL45V1920A 1.9 - 2.0ghz band 32w internally matched gaas fet Datasheet

MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFL45V1920A
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
DESCRIPTION
The MGFL45V1920A is an internally impedance-matched
GaAs power FET especially designed for use in 1.9 - 2.0
GHz band amplifiers.The hermetically sealed metal-ceramic
package guarantees high reliability.
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APPLICATION
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FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 32W (TYP.) @ f=1.9 - 2.0 GHz
High power gain
GLP = 13 dB (TYP.) @ f=1.9 - 2.0GHz
High power added efficiency
P.A.E. = 45 % (TYP.) @ f=1.9 - 2.0GHz
Low distortion [item -51]
IM3=-45dBc(TYP.) @Po=34.5dBm S.C.L.
QUALITY GRADE
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RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 6.5 (A)
RG=25 (ohm)
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ABSOLUTE MAXIMUM RATINGS
(Ta=25deg.C)
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item 01 : 1.9 - 2.0 GHz band power amplifier
item 51 : 1.9 - 2.0 GHz band digital radio communication
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< Keep safety first in your circuit designs! >
Mitsubishi Electric Corporation puts the maximum effort into
Symbol
Parameter
VGDO Gate to drain voltage
VGSO Gate to source voltage
ID
Drain current
IGR
Reverse gate current
IGF
Forward gate current
PT *1 Total power dissipation
Tch
Channel temperature
Tstg
Storage temperature
*1 : Tc=25deg.C
ELECTRICAL CARACTERISTICS
Symbol
VGS(off)
P1dB
GLP
ID
P.A.E.
IM3 *2
Rth(ch-c) *3
Parameter
Saturated drain current
Output power at 1dB gain
compression
Linear power gain
Drain current
Power added efficiency
3rd order IM distortion
Thermal resistance
Ratings
-15
-15
22
-61
76
100
175
-65 / +175
Unit
V
V
A
mA
mA
W
deg.C
deg.C
making semiconductor products better and more reliable,
but there is always the possibility that trouble may occur
with them.Trouble with semiconductors may lead to personal
injury, fire or property damage. Remember to give due
consideration to safety when making your circuit designs,
with appropriate measures such as (1)placement of
substitutive, auxiliary circuits, (2)use of non-flammable
material or (3)prevention against any malfunction or mishap.
(Ta=25deg.C)
Test conditions
VDS = 3V , ID = 60mA
VDS=10V, ID(RF off)=6.5A, f=1.9 - 2.0GHz
delta Vf method
Min.
-
Limits
Typ.
Max.
-5
Unit
V
44
45
-
dBm
12
-42
-
13
7.5
45
-45
-
1.5
dB
A
%
dBc
deg.C/W
*2 : item -51,2 tone test,Po=34.5dBm Single Carrier Level,f=1.9,2.0GHz,dfelta f=5MHz
*3 : Channel-case
MITSUBISHI
ELECTRIC
June-'04
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFL45V1920A
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
TYPICAL CHARACTERISTICS
Po , P.A.E. vs. Pin
50
17
VDS=10V
IDS=6.5A
44
15
GLP
43
14
42
60
Po
Output power Po (dBm)
16
Linear power gain GLP (dB)
Output power P1dB (dBm)
45
45
70
VDS=10V
IDS=6.5A
f=1.9GHz
P1dB
40
50
35
40
P.A.E.
30
30
25
20
13
41
1.85
1.90
1.95
Frequency (GHz)
12
2.05
2.00
20
Power added efficiency P.A.E. (%)
P1dB,GLP vs. Freq.
46
10
10
15
20
25
Input power Pin (dBm)
30
35
Po,IM3 vs. Pin
0
VDS=10V
IDS=6.5A
f1=1.900GHz
f2=1.905GHz
38
36
-10
Po
-20
34
-30
IM3
32
IM3 (dBc)
Output power Po (dBm S.C.L.)
40
-40
30
-50
28
-60
15
17
19
21
23
25
Input power Pin (dBm S.C.L.)
S parameters
f
(GHz)
1.70
1.75
1.80
1.85
1.90
1.95
2.00
2.05
2.10
2.15
2.20
27
29
( Ta=25deg.C , VDS=10(V),IDS=6.5(A) )
S11
Magn.
Angle(deg)
0.55
53
0.41
27
0.29
-16
0.28
-78
0.38
-124
0.49
-152
0.57
-170
0.62
178
0.65
166
0.66
156
0.66
146
S-Parameter (TYP.)
S21
S12
Magn.
Angle(deg)
Magn.
Angle(deg)
4.18
-151
0.03
-176
4.76
-170
0.03
161
5.21
167
0.03
135
5.43
145
0.04
108
5.34
122
0.04
84
5.07
102
0.04
59
4.74
84
0.04
41
4.48
70
0.03
25
4.23
54
0.03
7
4.05
40
0.03
-10
3.95
26
0.03
-24
MITSUBISHI
ELECTRIC
Magn.
0.49
0.44
0.37
0.28
0.20
0.16
0.16
0.19
0.23
0.26
0.30
S22
Angle(deg)
66
51
33
11
-21
-61
-98
-120
-136
-147
-154
June-'04
MITSUBISHI SEMICONDUCTOR <GaAs FET>
MGFL45V1920A
1.9 - 2.0GHz BAND 32W INTERNALLY MATCHED GaAs FET
MITSUBISHI
ELECTRIC
June-'04
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