Renesas LSIs RENESAS CONFIDENTIAL M6MGD137W34DWG 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Description The M6MGD137W34DWG is a Stacked Chip Scale Package (S-CSP) that contents 128M-bit Flash memory and 32M-bit Mobile RAM in a 72-pin Stacked CSP for lead free use. 128M-bit Flash memory is a 8,388,608 words, single power supply and high performance non-volatile memory fabricated by CMOS technology for the peripheral circuit and DINOR IV (Divided bit-line NOR IV) architecture for the memory cell. All memory blocks are locked and can not be programmed or erased, when F-WP# is Low. Using Software Lock Release function, program or erase operation can be executed. 32M-bit Mobile RAM is a 2,097,152 words high density RAM fabricated by CMOS technology for the peripheral circuit and DRAM cell for the memory array. The interface is compatible to an asynchronous SRAM. The M6MGD137W34DWG is suitable for a high performance cellular phone and a mobile PC that are required to be small mounting area, weight and small power dissipation. Features Access Time Flash 70ns (Max.) Mobile RAM 80ns (Max.) Supply Voltage FM-VCC=2.7 ~ 3.0V Ambient Temperature Ta= -40 ~ 85 degree Package 72pin S-CSP, Ball pitch 0.80mm Outer-ball:Su-Ag-Cu The cells are automatically refreshed and the refresh control is not required for system. The device also has the partial block refresh scheme and the power down mode by writing the command. Application Mobile communication products PIN CONFIGURATION (TOP VIEW) INDEX(Laser Marking) 1 3 4 5 6 7 8 NC NC A NC NC B FCE2# 10.8 mm 2 GND FWE# A16 A20 C FRP# FRY/BY# A8 A11 D A19 NC FA21 A10 A15 E MOE# DQ11 NC NC A9 A14 F DQ12 DQ13 DQ15 A13 G A18 MLB# FWP# A5 A17 MUB# MWE# A4 A7 NC A6 A0 FCE1# A3 DQ9 FMVCC GND A2 DQ8 DQ10 DU DQ6 NC A12 H A1 DQ0 DQ2 NC DQ4 DQ14 GND J DQ3 FMVCC DQ5 DQ7 NC K NC L NC M FOE# MCE# NC DQ1 NC NC (Top View) 8.5 mm FM-VCC GND A0-A20 F-A21 DQ0-DQ15 F-CE1# F-CE2# F-OE# F-WE# 1 : VCC for Flash / Mobile RAM : GND for Flash / Mobile RAM : Common address for Flash/Mobile RAM : Address for Flash : Data I/O : Flash chip enable 1 : Flash chip enable 2 : Output enable for Flash Memory : Write enable for Flash Memory F-RP# F-WP# F-RY/BY# M-CE# M-OE# M-WE# M-LB# M-UB# NC DU : Reset power down for Flash : Write protect for Flash : Flash Memory Ready /Busy : Mobile RAM chip enable : Output enable for Mobile RAM : Write enable for Mobile RAM : Lower byte control for Mobile RAM : Upper byte control for Mobile RAM : Non Connection : Don’t Use Rev.1.2_48a_bezc Renesas LSIs RENESAS CONFIDENTIAL M6MGD137W34DWG 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) MCP Block Diagram FM-Vcc GND A0 to F-A21 F-RY/BY# A0 to F-A21 128Mbit DINOR IV Flash Memory F-CE1# F-CE2# F-WP# F-RP# F-WE# F-OE# DQ0 to DQ15 A0 to A20 M-WE# M-OE# M-UB# M-LB# M-CE# 32Mbit Mobile RAM Note: In the 128M-bit DINOR(IV) Flash Memory lower 64Mbit is selected by F-CE1#=“L” and upper 64Mbit is done by F-CE2#=“L”. Never select each chip at the same time. In the data sheet there are “VCC”s which mean “FM-VCC” (Common Vcc for Flash / Mobile RAM). In the Flash Memory part they mean A21, OE# and WE# are F-A21, F-OE# and F-WE#. In the Mobile RAM part UB# , LB#, OE# and WE# are M-UB# , M-LB#, M-OE# and M-WE#, respectively. Capacitance Symbol 2 Parameter CIN Input capacitance F-A21-A0, F-OE#, F-WE#, F-CE1#, F-CE2#, F-WP#, F-RP#, M-OE#, M-WE#, M-CE#, M-LB#, M-UB# COUT Output Capacitance DQ15-DQ0, F-RY/BY# Conditions Ta=25°C, f=1MHz, Vin=Vout=0V Min. Limits Typ. Max. Unit 26 pF 34 pF Rev.1.2_48a_bezc Renesas LSIs M6MGD137W34DWG 134,217,728-BIT (8,388,608-WORD BY 16-BIT) CMOS FLASH MEMORY & 33,554,432-BIT (2,097,152-WORD BY 16-BIT) CMOS MOBILE RAM Stacked-CSP ( Chip Scale Package) Nippon Bldg.,6-2,Otemachi 2-chome,Chiyoda-ku,Tokyo,100-0004 Japan Keep safety first in your circuit designs! • Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage.Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. 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New publication, effective April 2003. Specifications subject to change without notice