ON BS107ARLRM Small signal mosfet 250 mamps, 200 volt Datasheet

BS107, BS107A
Preferred Device
Small Signal MOSFET
250 mAmps, 200 Volts
N−Channel TO−92
Features
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• Pb−Free Package is Available*
250 mA, 200 V
RDS(on) = 14 (BS107)
RDS(on) = 6.4 (BS107A)
N−Channel
MAXIMUM RATINGS
Rating
Drain −Source Voltage
Gate−Source Voltage
− Continuous
− Non−repetitive (tp ≤ 50 s)
Drain Current
Continuous (Note 1)
Pulsed (Note 2)
Total Device Dissipation @ TA = 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol
Value
Unit
VDS
200
Vdc
VGS
VGSM
± 20
± 30
Vdc
Vpk
ID
IDM
250
500
PD
350
mW
TJ, Tstg
−55 to
150
°C
D
G
mAdc
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
S
MARKING DIAGRAM
& PIN ASSIGNMENT
BS
107
YWW
TO−92
CASE 29
STYLE 30
1
2
3
BS107 = Specific Device Code
Y
= Year
WW = Work Week
1
Drain
2
Gate
3
Source
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
 Semiconductor Components Industries, LLC, 2004
December, 2004 − Rev. 4
1
Publication Order Number:
BS107/D
BS107, BS107A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero−Gate−Voltage Drain Current (VDS = 130 Vdc, VGS = 0)
IDSS
−
−
30
nAdc
Drain−Source Breakdown Voltage (VGS = 0, ID = 100 Adc)
V(BR)DSX
200
−
−
Vdc
IGSS
−
0.01
10
nAdc
Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS)
VGS(Th)
1.0
−
3.0
Vdc
Static Drain−Source On Resistance
BS107 (VGS = 2.6 Vdc, ID = 20 mAdc)
(VGS = 10 Vdc, ID = 200 mAdc)
BS107A (VGS = 10 Vdc)
(ID = 100 mAdc)
(ID = 250 mAdc)
rDS(on)
−
−
−
−
28
14
−
−
4.5
4.8
6.0
6.4
OFF CHARACTERISTICS
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
ON CHARACTERISTICS (Note 3)
SMALL−SIGNAL CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
−
60
−
pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Crss
−
6.0
−
pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss
−
30
−
pF
gfs
200
400
−
mmhos
Turn−On Time
ton
−
6.0
15
ns
Turn−Off Time
toff
−
12
15
ns
Forward Transconductance
(VDS = 25 Vdc, ID = 250 mAdc)
SWITCHING CHARACTERISTICS
3. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
RESISTIVE SWITCHING
+25 V
TO SAMPLING SCOPE
50 INPUT
Vout
23
PULSE GENERATOR
20 dB
50 ATTENUATOR
Vin
40 pF
50
50
ton
toff
90%
90%
10%
OUTPUT Vout
INVERTED
1M
10 V
INPUT Vin
90%
50%
10%
PULSE WIDTH
50%
Figure 2. Switching Waveforms
Figure 1. Switching Test Circuit
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2
BS107, BS107A
200
180
VGS = 0 V
160
5.0
VGS = 10 V
C, CAPACITANCE (pF)
VDS , DRAIN−SOURCE VOLTAGE (VOLTS)
10
250 mA
2.0
1.0
100 mA
0.5
140
120
100
Ciss
80
60
40
0.2
20
0.1
−55
−35
−15
85 105
65
+5.0 25
45
TJ, JUNCTION TEMPERATURE (°C)
125
0
145
40
10
20
30
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
0
0.7
0.6
I D(on) , DRAIN CURRENT (AMPS)
0.7
VGS = 10 V
0.6
0.5
0.4
0.3
0.2
0.1
0
1.0
5.0 6.0 7.0 8.0
2.0 3.0 4.0
VGS, GATE−SOURCE VOLTAGE (VOLTS)
9.0
10
10 V
5.0 V
0.5
0.4
0.3
4.0 V
0.2
0.1
3.0 V
0
Figure 5. Transfer Characteristic
2.0
10
4.0
6.0 8.0
12
14
16
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 6. Output Characteristic
0.7
10 V
0.6
0.5
5.0 V
0.4
0.3
4.0 V
0.2
0.1
3.0 V
1.0
50
Figure 4. Capacitance Variation
0.8
ID(on), DRAIN CURRENT (AMPS)
ID(on) , DRAIN CURRENT (AMPS)
Figure 3. On Voltage versus Temperature
0
Coss
Crss
2.0
3.0
4.0
VDS, DRAIN−SOURCE VOLTAGE (VOLTS)
Figure 7. Saturation Characteristic
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3
5.0
18
20
BS107, BS107A
ORDERING INFORMATION
Device
BS107
Shipping†
Package
TO−92
TO−92
(Pb−Free)
1000 Unit / Box
BS107RLRA
TO−92
2000 / Tape & Reel
BS107RL1
TO−92
2000 / Tape & Reel
BS107A
TO−92
BS107G
TO−92
(Pb−Free)
1000 Units / Box
BS107ARLRM
TO−92
2000 Ammo Pack
BS107ARLRP
TO−92
2000 Ammo Pack
BS107ARL1
TO−92
BS107AG
BS107ARL1G
2000 / Tape & Reel
TO−92
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
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4
BS107, BS107A
PACKAGE DIMENSIONS
TO−92 (TO−226)
CASE 29−11
ISSUE AL
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
P
L
SEATING
PLANE
K
D
X X
G
J
H
V
C
SECTION X−X
1
N
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.045
0.055
0.095
0.105
0.015
0.020
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.100
0.115
−−−
0.135
−−−
STYLE 30:
PIN 1. DRAIN
2. GATE
3. SOURCE
N
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5
MILLIMETERS
MIN
MAX
4.45
5.20
4.32
5.33
3.18
4.19
0.407
0.533
1.15
1.39
2.42
2.66
0.39
0.50
12.70
−−−
6.35
−−−
2.04
2.66
−−−
2.54
2.93
−−−
3.43
−−−
BS107, BS107A
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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For additional information, please contact your
local Sales Representative.
BS107/D
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