Filtronic FMS2013-000-EB Spdt gaas high isolation absorptive switch dc-4 ghz Datasheet

FMS2013
Preliminary Data Sheet 2.1
SPDT GaAs High Isolation Absorptive Switch DC-4 GHz
Functional Schematic
Features:
♦
♦
♦
♦
♦
Available as RF Known Good Die
Excellent low control voltage performance
Excellent harmonic performance
Very high isolation >49dB typ. up to 4GHz
Very low Tx Insertion loss <1.0 dB at 4GHz
RF01
V2
V1
RFIN
RF02
Description and Applications:
The FMS2013 is a low loss, high power, linear single-pole double-throw Gallium Arsenide switch
designed for general purpose applications over the frequency range DC-4GHz. The die is fabricated
using the Filtronic FL05 0.5µm switch process technology which offers market leading performance
optimised for switch applications.
Electrical Specifications:
Parameter
Test Conditions
Tx Insertion Loss
4GHz
1.0
dB
Rx Insertion Loss
4GHz
1.0
dB
Return Loss
4GHz
15
dB
VSWR On State
4GHz
1:1.3
VSWR Off State
4GHz
1:1.4
Isolation at 4 GHz
4GHz
49
2nd Harmonic Level
3GHz, Pin = 21dBm, Vctrl = 3V
-72
dBc
3GHz, Pin = 27dBm, Vctrl = 5V
-68
dBc
Pin = 21dBm, 10% to 90% RF
30
ns
Switching speed
Note:
(TOP = 25°C,Vctrl = 0V/2.5V, ZIN = ZOUT = 50Ω)
Min
Typ
Max
External DC blocking capacitors are required on all RF ports (typ: 47pF).
1
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: [email protected]
Website: www.filcs.com
Units
dB
FMS2013
Preliminary Data Sheet 2.1
Absolute Maximum Ratings:
Parameter
Symbol
Absolute Maximum
Max Input Power
Pin
+30dBm
Control Voltage
Vctrl
+5V
Operating Temperature
TOP
-40°C to +100°C
Storage Temperature
TOP
-55°C to +150°C
Note: Exceeding any one of these absolute maximum ratings may cause permanent damage to the
device.
Truth Table:
Vctrl1
Vctrl2
RFIN-RF01
RFIN-RF02
High
Low
On
Off
Low
High
Off
On
Note:
‘High’
‘Low’
= >2.5V & <5V
= <0.2V
Pad and Die Layout:
E
D
C
Pad
Reference
Pad
Name
Description
Pin Coordinates
(µm)
A
G1
GND1
159 , 286
B
RFI
RFIN
159 , 446
C
C2
Vctrl1
159 , 606
D
C1
Vctrl2
159 , 766
E
RFO1
RFO1
757 , 857
F
G2
GND2
757 , 555
G
G3
GND3
757 , 414
H
RFO2
RFO2
757 , 112
F
B
G
A
H
Note: Co-ordinates are referenced from the bottom left hand corner of the die to the centre of the
bond pad opening
Die Size (µm)
Die Thickness
(µm)
Min. Bond Pad
Pitch (µm)
Min. Bond pad
Opening (µm)
870 x 970
150
141
94 x 94
2
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: [email protected]
Website: www.filcs.com
FMS2013
Preliminary Data Sheet 2.1
Typical Measured Performance Curves Mounted on Evaluation Board:
-20
2
1.8
Isolation (dB)
Off State
VSWR
On State
1.6
1.4
-30
Isolation (dB)
-40
-50
-60
1.2
1
0
2
4
Frequency (GHz)
-70
6
0
VSWR vs. Frequency
2
4
Frequency (GHz)
6
Isolation vs. Frequency
-0.8
0
dB(S21)
-1
Loss (dB)
Loss (dB)
-0.5
-1
-1.2
-1.4
3V
5V
-1.6
-1.5
-1.8
-2
3e-005
20
2
4
6
Insertion Loss vs. Frequency
22
24
26
28
Input Power (dBm)
Insertion Loss vs. Power
3
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: [email protected]
Website: www.filcs.com
30
FMS2013
Preliminary Data Sheet 2.1
Evaluation Board:
V1 GRD V2
RFO1
C2
C1
C4
C6
C7
C3
RFIN
C5
RFO2
Label
Component
C1, C2
Capacitor, 470pF, 0603
C3, C4, C5
Capacitor, 100pF, 0202
C6, C7
Capacitor, 47pF, 0402
Evaluation Board De-Embedding Data (Measured):
0
-0.2
S11 (dB)
Loss (dB)
S11 (dB)
-10
0
-20
-30
-40
3e-005
-0.4
-0.6
Loss (dB)
-0.8
-1
2
4
Frequency (GHz)
0
6
Return Loss vs. Frequency
2
4
Frequency (GHz)
6
Insertion Loss vs. Frequency
Isolation (dB)
-20
-30
Isolation (dB)
-40
-50
-60
-70
0
2
4
Frequency (GHz)
6
Isolation vs. Frequency
4
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: [email protected]
Website: www.filcs.com
Preliminary Data Sheet 2.1
FMS2013
Ordering Information:
Part Number
Description
FMS2013-000-WP
Die – waffle pak
FMS2013-000-GP
Die – gel pak
FMS2013-000-EB
Die mounted on evaluation board
FMS2013-000-FF
Wafer mounted on film frame
Preferred Assembly Instructions:
GaAs devices are fragile and should be handled with great care. Specially designed collets should be
used where possible.
The back of the die is not metallised and the recommended mounting method is by the use of
conductive epoxy. Epoxy should be applied to the attachment surface uniformly and sparingly to avoid
encroachment of epoxy on to the top face of the die and ideally should not exceed half the chip height.
For automated dispense Ablestick LMISR4 is recommended and for manual dispense Ablestick 84-1
LMI or 84-1 LMIT are recommended. These should be cured at a temperature of 150°C for 1 hour in
an oven especially set aside for epoxy curing only. If possible the curing oven should be flushed with
dry nitrogen.
This part has gold (Au) bond pads requiring the use of gold (99.99% pure) bondwire. It is
recommended that 25.4µm diameter gold wire is used. Thermosonic ball bonding is preferred. A
nominal stage temperature of 150°C and a bonding force of 40g has been shown to give effective
results for 25µm wire. Ultrasonic energy shall be kept to a minimum. For this bonding technique,
stage temperature should not be raised above 200°C and bond force should not be raised above 60g.
Thermosonic wedge bonding and thermocompression wedge bonding can also be used to achieve
good wire bonds.
Bonds should be made from the die first and then to the mounting substrate or package. The physical
length of the bondwires should be minimised especially when making RF or ground connections.
Handling Precautions:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A (0-500 V) as defined in JEDEC Standard No.
22-A114-B. Further information on ESD control measures can be found in MIL-STD-1686 and MILHDBK-263.
Disclaimers:
This product is not designed for use in any space based or life sustaining/supporting equipment.
5
Preliminary specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Contact Details (UK): Tel: +44 (0) 1325 301111 Fax: +44 (0) 1325 306177 Email: [email protected]
Contact Details (USA): Tel: +1 (408) 850 5790
Fax: +1 (408) 850 5766
Email: [email protected]
Website: www.filcs.com
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