IXYS IXGT28N90B Hiperfast igbt Datasheet

HiPerFASTTM IGBT
IXGH 28N90B VCES
IXGT 28N90B IC25
VCE(SAT)
tfi(typ)
Preliminary data sheet
Symbol
Test Conditions
VCES
TJ = 25°C to 150°C
900
V
VCGR
TJ = 25°C to 150°C; RGE = 1 MW
900
V
VGES
Continuous
±20
V
VGEM
Transient
±30
V
I C25
TC = 25°C
51
A
I C110
TC = 110°C
28
A
ICM
TC = 25°C, 1 ms
120
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 W
Clamped inductive load, L = 100 mH
ICM = 56
@ 0.8 VCES
A
PC
TC = 25°C
200
W
Maximum Ratings
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
300
°C
TJ
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Md
Mounting torque (M3)
1.13/10Nm/lb.in.
Weight
TO-247 AD
TO-247 SMD
Symbol
Test Conditions
BVCES
IC
= 250 mA, VGE = 0 V
900
VGE(th)
IC
= 250 mA, VCE = VGE
2.5
I CES
VCE = VCES
VGE = 0 V
I GES
VCE = 0 V, VGE = ±20 V
VCE(sat)
IC
= IC110, VGE = 15 V
© 2000 IXYS All rights reserved
= 900 V
=
51 A
= 2.7 V
= 130 ns
6
4
g
g
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V
TJ = 25°C
TJ = 150°C
2.2
5
V
500
5
mA
mA
±100
nA
2.7
V
TO-247 AD
(IXGH)
C (TAB)
G
C
E
TO-268 (D3)
(IXGT)
G
(TAB)
E
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
l
International standard packages
JEDEC TO-268 surface
mountable and JEDEC TO-247 AD
l
High current handling capability
l
Latest generation HDMOSTM process
l
MOS Gate turn-on
- drive simplicity
Applications
l
AC motor speed control
l
DC servo and robot drives
l
DC choppers
l
Uninterruptible power supplies (UPS)
l
Switched-mode and resonant-mode
power supplies
Advantages
l
Space savings (two devices in one
package)
l
High power density
l
Suitable for surface mounting
l
Switching speed for high frequency
applications
l
Easy to mount with 1 screw,TO-247
(isolated mounting screw hole)
98634B (10/00)
IXGH 28N90B
IXGT 28N90B
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs
IC = IC110; VCE = 10 V,
Pulse test, t £ 300 ms, duty cycle £ 2 %
20
Cies
Coes
32
S
3200
pF
160
pF
32
pF
ÆP
VCE = 25 V, VGE = 0 V, f = 1 MHz
Cres
Qg
Qge
I C = IC110, VGE = 15 V, VCE = 0.5 VCES
Qgc
td(on)
Inductive load, TJ = 25°C
t ri
I C = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7 W
td(off)
Eoff
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
td(on)
Inductive load, TJ = 125°C
tfi
t ri
Eon
td(off)
tfi
Eoff
I C = IC110, VGE = 15 V
VCE = 0.8 VCES, RG = Roff = 4.7 W
Remarks: Switching times may
increase for VCE (Clamp) > 0.8 • VCES,
higher TJ or increased RG
100
150
nC
18
28
nC
40
70
nC
30
ns
30
ns
100
170
ns
130
220
ns
1.2
2 mJ
30
ns
35
ns
0.3
mJ
280
ns
190
ns
2.5
mJ
RthJC
RthCK
TO-247 AD Outline
e
Dim.
Millimeter
Min.
Max.
A
4.7
5.3
A1
2.2
2.54
A2
2.2
2.6
b
1.0
1.4
b1
1.65
2.13
b2
2.87
3.12
C
.4
.8
D
20.80 21.46
E
15.75 16.26
e
5.20
5.72
L
19.81 20.32
L1
4.50
ÆP 3.55
3.65
Q
5.89
6.40
R
4.32
5.49
S
6.15 BSC
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
.610 .640
0.205 0.225
.780 .800
.177
.140 .144
0.232 0.252
.170 .216
242 BSC
TO-268 Outline
0.62 K/W
TO-247
0.25
K/W
Min Recommended Footprint
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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