LRC LBAS170HT1G Schottky barrier diode schottky diode for high-speed switching Datasheet

LESHAN RADIO COMPANY, LTD.
SCHOTTKY BARRIER DIODE
LBAS170HT1G
Features
• Schottky diode for high-speed switching
• Circuit protection
• Voltage clamping
• High-level detecting and mixing
• We declare that the material of product
compliance with RoHS requirements.
SOD-323
Ordering Information
1
2
CATHODE
Device
Marking
Shipping
LBAS170HT1G
73
3000 Tape & Reel
LBAS170HT3G
73
10000 Tape & Reel
Maximum Ratings and Thermal Characteristics
Parameter
ANODE
(TC = 25°C unless otherwise noted)
Symbol
Value
Unit
VRRM
70
V
IF
70
mA
I FSM
600
mA
P tot
200
mW
RθJA
650
°C/W
Junction Temperature
Tj
150
°C
Operating Temperature Range
T op
–55 to +125
°C
Storage Temperature Range
TS
–55 to +150
°C
Repetitive Peak Reverse Voltage
Forward Continuous Current at Tamb = 25°C
Surge Forward Current at tp < 1s, Tamb = 25°C
Power Dissipation
(1)
at Tamb = 25°C
Thermal Resistance Junction to Ambient Air
(1)
Note: (1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
V(BR)R
IR = 10µA (pulsed)
70
—
—
V
Leakage Current
IR
VR = 50V
VR = 70V
—
—
—
—
0.1
10
µA
Forward Voltage
VF
IF = 1mA
IF = 10mA
IF = 15mA(1)
—
—
—
375
705
880
410
750
1000
Capacitance
C tot
VR = 0V
f = 1MHz
—
1.5
2
pF
τ
IF = 25mA
—
100
—
ps
RF
IE = 5mA, f = 10KHZ
—
34
—
Ω
Charge Carrier Lifetime
Differential Forward Resistance
mV
Note: (1) Pulse test; tp ≤ 300µs
Rev.O 1/3
LESHAN RADIO COMPANY, LTD.
LBAS170HT1G
Electrical characteristic curves(TA = 25°C)
2
10
IR , REVERSE CURRENT (μA)
IF, FORWARD CURRENT (mA)
10
10
1
Tamb=85OC
O
-1
10 Tamb=125 C
Tamb=25OC
-2
10 0
0.2
0.4
0.6
0.8
1.0
Tamb=125OC
10
1
Tamb=85OC
1
10-
10
Tamb=-40OC
2
-2
Tamb=25OC
10-3
0
FORWARD VOLTAGE: V (V)
F
60
80
Fig.2 Reverse current as a function of
reverse voltage; typical values.
2
C T, CAPACITANCE (pF)
103
Differential forward resistance rdif (Ω)
40
FORWARD VOLTAGE: V (V)
R
Fig.1 Forward current as a function of
forward voltage; typical values.
2
10
10
1
-1
10
20
1
2
10
FORWARD VOLTAGE: I (mA)
F
10
f=10KHz
Fig.3 Differential forward resistance as a function
of forward current;typical values.
1.5
1
0.5
0
0
20
40
FORWARD VOLTAGE: V (V)
R
60
80
O
f=1MHz Tamb=25 C
Fig.4 Diode capacitance as a function of reverse
voltage;typical values.
Rev.O 2/3
LESHAN RADIO COMPANY, LTD.
LBAS170HT1G
SOD-323
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. LEAD THICKNESS SPECIFIED PER L/F DRAWING
WITH SOLDER PLATING.
4. DIMENSIONS A AND B DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
5. DIMENSION L IS MEASURED FROM END OF RADIUS.
HE
D
b
1
2
E
MILLIMETERS
DIM MIN
NOM MAX
A
0.80
0.90
1.00
A1 0.00
0.05
0.10
A3
0.15 REF
b
0.25
0.32
0.4
C 0.089
0.12 0.177
D
1.60
1.70
1.80
E
1.15
1.25
1.35
L
0.08
HE
2.30
2.50
2.70
A3
A
C
NOTE 3
L
NOTE 5
A1
INCHES
NOM MAX
0.035 0.040
0.002 0.004
0.006 REF
0.010 0.012 0.016
0.003 0.005 0.007
0.062 0.066 0.070
0.045 0.049 0.053
0.003
0.090 0.098 0.105
MIN
0.031
0.000
SOLDERING FOOTPRINT*
0.63
0.025
0.83
0.033
1.60
0.063
2.85
0.112
Rev.O 3/3
Similar pages