LESHAN RADIO COMPANY, LTD. SCHOTTKY BARRIER DIODE LBAS170HT1G Features • Schottky diode for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing • We declare that the material of product compliance with RoHS requirements. SOD-323 Ordering Information 1 2 CATHODE Device Marking Shipping LBAS170HT1G 73 3000 Tape & Reel LBAS170HT3G 73 10000 Tape & Reel Maximum Ratings and Thermal Characteristics Parameter ANODE (TC = 25°C unless otherwise noted) Symbol Value Unit VRRM 70 V IF 70 mA I FSM 600 mA P tot 200 mW RθJA 650 °C/W Junction Temperature Tj 150 °C Operating Temperature Range T op –55 to +125 °C Storage Temperature Range TS –55 to +150 °C Repetitive Peak Reverse Voltage Forward Continuous Current at Tamb = 25°C Surge Forward Current at tp < 1s, Tamb = 25°C Power Dissipation (1) at Tamb = 25°C Thermal Resistance Junction to Ambient Air (1) Note: (1) Valid provided that electrodes are kept at ambient temperature Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit Reverse Breakdown Voltage V(BR)R IR = 10µA (pulsed) 70 — — V Leakage Current IR VR = 50V VR = 70V — — — — 0.1 10 µA Forward Voltage VF IF = 1mA IF = 10mA IF = 15mA(1) — — — 375 705 880 410 750 1000 Capacitance C tot VR = 0V f = 1MHz — 1.5 2 pF τ IF = 25mA — 100 — ps RF IE = 5mA, f = 10KHZ — 34 — Ω Charge Carrier Lifetime Differential Forward Resistance mV Note: (1) Pulse test; tp ≤ 300µs Rev.O 1/3 LESHAN RADIO COMPANY, LTD. LBAS170HT1G Electrical characteristic curves(TA = 25°C) 2 10 IR , REVERSE CURRENT (μA) IF, FORWARD CURRENT (mA) 10 10 1 Tamb=85OC O -1 10 Tamb=125 C Tamb=25OC -2 10 0 0.2 0.4 0.6 0.8 1.0 Tamb=125OC 10 1 Tamb=85OC 1 10- 10 Tamb=-40OC 2 -2 Tamb=25OC 10-3 0 FORWARD VOLTAGE: V (V) F 60 80 Fig.2 Reverse current as a function of reverse voltage; typical values. 2 C T, CAPACITANCE (pF) 103 Differential forward resistance rdif (Ω) 40 FORWARD VOLTAGE: V (V) R Fig.1 Forward current as a function of forward voltage; typical values. 2 10 10 1 -1 10 20 1 2 10 FORWARD VOLTAGE: I (mA) F 10 f=10KHz Fig.3 Differential forward resistance as a function of forward current;typical values. 1.5 1 0.5 0 0 20 40 FORWARD VOLTAGE: V (V) R 60 80 O f=1MHz Tamb=25 C Fig.4 Diode capacitance as a function of reverse voltage;typical values. Rev.O 2/3 LESHAN RADIO COMPANY, LTD. LBAS170HT1G SOD-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. HE D b 1 2 E MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 A3 A C NOTE 3 L NOTE 5 A1 INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 MIN 0.031 0.000 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 Rev.O 3/3