NXP BGD904 860 mhz, 20 db gain power doubler amplifier Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D252
BGD904; BGD904MI
860 MHz, 20 dB gain power
doubler amplifier
Product specification
Supersedes data of 2000 Jan 10
2001 Nov 01
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
FEATURES
BGD904; BGD904MI
PINNING - SOT115J
• Excellent linearity
DESCRIPTION
PIN
• Extremely low noise
BGD904
• Excellent return loss properties
1
• Silicon nitride passivation
input
2, 3
• Rugged construction
5
• Gold metallization ensures excellent reliability.
BGD904MI
7, 8
9
output
common
common
+VB
+VB
common
common
output
input
APPLICATIONS
• CATV systems operating in the 40 to 900 MHz
frequency range.
1
2
3
5
7
8
9
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
Side view
msa319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Gp
power gain
f = 50 MHz
19.7
f = 900 MHz
20.5
21.5
dB
Itot
total current consumption (DC)
VB = 24 V
405
435
mA
20.3
dB
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VB
supply voltage
−
30
V
Vi
RF input voltage
−
70
dBmV
Tstg
storage temperature
−40
+100
°C
Tmb
operating mounting base temperature
−20
+100
°C
2001 Nov 01
2
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD904; BGD904MI
CHARACTERISTICS
Bandwidth 40 to 900 MHz; VB = 24 V; Tmb = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
Gp
power gain
SL
slope straight line
FL
flatness straight line
S11
input return losses
S22
output return losses
CONDITIONS
MIN.
TYP.
MAX.
UNIT
f = 50 MHz
19.7
20
20.3
dB
f = 900 MHz
20.5
21
21.5
dB
f = 40 to 900 MHz
0.4
0.9
1.4
dB
f = 40 to 900 MHz
−
±0.15
±0.3
dB
f = 40 to 80 MHz
21
25
−
dB
f = 80 to 160 MHz
22
30
−
dB
f = 160 to 320 MHz
21
29
−
dB
f = 320 to 550 MHz
18
24
−
dB
f = 550 to 650 MHz
17
22
−
dB
f = 650 to 750 MHz
16
21
−
dB
f = 750 to 900 MHz
16
21
−
dB
f = 40 to 80 MHz
25
29
−
dB
f = 80 to 160 MHz
23
28
−
dB
f = 160 to 320 MHz
20
25
−
dB
f = 320 to 550 MHz
20
24
−
dB
f = 550 to 650 MHz
19
24
−
dB
f = 650 to 750 MHz
18
24
−
dB
f = 750 to 900 MHz
17
23
−
dB
S21
phase response
f = 50 MHz
−45
−
+45
deg
CTB
composite triple beat
49 chs flat; Vo = 47 dBmV; fm = 859.25 MHz
−
−68
−66.5
dB
Xmod
cross modulation
2001 Nov 01
77 chs flat; Vo = 44 dBmV; fm = 547.25 MHz
−
−69.5
−67.5
dB
110 chs flat; Vo = 44 dBmV; fm = 745.25 MHz
−
−63
−61.5
dB
129 chs flat; Vo = 44 dBmV; fm = 859.25 MHz
−
−59.5
−57.5
dB
110 chs; fm = 400 MHz;
Vo = 49 dBmV at 550 MHz; note 1
−
−63.5
−61.5
dB
129 chs; fm = 650 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
−
−58.5
−56
dB
49 chs flat; Vo = 47 dBmV; fm = 55.25 MHz
−
−66
−63
dB
77 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−68.5
−66
dB
110 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−65.5
−62.5
dB
129 chs flat; Vo = 44 dBmV; fm = 55.25 MHz
−
−64
−61
dB
110 chs; fm = 400 MHz;
Vo = 49 dBmV at 550 MHz; note 1
−
−61.5
−59
dB
129 chs; fm = 860 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
−
−60
−57
dB
3
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
SYMBOL
CSO
d2
Vo
F
Itot
PARAMETER
composite second
order distortion
second order distortion
output voltage
noise figure
total current
consumption (DC)
BGD904; BGD904MI
CONDITIONS
49 chs flat; Vo = 47 dBmV; m = 860.5 MHz
MIN.
−
TYP.
−68
−62
UNIT
dB
77 chs flat; Vo = 44 dBmV; fm = 548.5 MHz
−
−72
−67
dB
110 chs flat; Vo = 44 dBmV; fm = 746.5 MHz
−
−68
−62
dB
129 chs flat; Vo = 44 dBmV; fm = 860.5 MHz
−
−64
−58
dB
110 chs; fm = 250 MHz;
Vo = 49 dBmV at 550 MHz; note 1
−
−67
−62
dB
129 chs; fm = 250 MHz;
Vo = 49.5 dBmV at 860 MHz; note 2
−
−62
−58
dB
note 3
−
−82
−75
dB
note 4
−
−82
−76
dB
note 5
−
−83
−77
dB
dim = −60 dB; note 6
64
65.5
−
dBmV
dim = −60 dB; note 7
65
67
−
dBmV
dim = −60 dB; note 8
67
69
−
dBmV
CTB compression = 1 dB; 129 chs flat;
f = 859.25 MHz
48.5
49
−
dBmV
CSO compression = 1 dB; 129 chs flat;
f = 860.5 MHz
50
52
−
dBmV
f = 50 MHz
−
4
5
dB
f = 550 MHz
−
4.5
5.5
dB
f = 750 MHz
−
5.1
6.5
dB
f = 900 MHz
−
6.2
7.5
dB
note 9
405
420
435
mA
Notes
1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp = 55.25 MHz; Vp = 44 dBmV; fq = 805.25 MHz; Vq = 44 dBmV; measured at fp + fq = 860.5 MHz.
4. fp = 55.25 MHz; Vp = 44 dBmV; fq = 691.25 MHz; Vq = 44 dBmV; measured at fp + fq = 746.5 MHz.
5. fp = 55.25 MHz; Vp = 44 dBmV; fq = 493.25 MHz; Vq = 44 dBmV; measured at fp + fq = 548.5 MHz.
6. Measured according to DIN45004B:
fp = 851.25 MHz; Vp = Vo; fq = 858.25 MHz; Vq = Vo −6 dB;
fr = 860.25 MHz; Vr = Vo −6 dB; measured at fp + fq − fr = 849.25 MHz.
7. Measured according to DIN45004B:
fp = 740.25 MHz; Vp = Vo; fq = 747.25 MHz; Vq = Vo −6 dB; fr = 749.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 738.25 MHz.
8. Measured according to DIN45004B:
fp = 540.25 MHz; Vp = Vo; fq = 547.25 MHz; Vq = Vo −6 dB; fr = 549.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 538.25 MHz.
9. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 35 V.
2001 Nov 01
MAX.
4
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
mda983
−50
BGD904; BGD904MI
Vo
(dBmV)
CTB
(dB)
(2)
(3)
(4)
(1)
−60
(2)
(3)
(4)
mda984
−50
52
Xmod
(dB)
Vo
(dBmV)
(1)
(2)
(3)
(4)
−60
48
(1)
52
48
(1)
−70
44
−70
44
−80
40
−80
40
36
1000
800
f (MHz)
−90
−90
200
0
400
600
0
200
400
600
36
800
1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(1) Vo.
(2) Typ. +3 σ.
Fig.2
(3) Typ.
(4) Typ. −3 σ.
Composite triple beat as a function of
frequency under tilted conditions.
mda985
−50
CSO
(dB)
52
Vo
(dBmV)
(1)
−60
Fig.3
48
(2)
(1)
(2)
(3)
−70
44
(3)
(4)
(4)
−80
−90
40
0
200
400
600
36
800
1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
Fig.4
(3) Typ.
(4) Typ. −3 σ.
Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Nov 01
5
(3) Typ.
(4) Typ. −3 σ.
Cross modulation as a function of frequency
under tilted conditions.
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
mda931
−50
CTB
(dB)
BGD904; BGD904MI
52
Vo
(dBmV)
(1)
mda932
−50
Xmod
(dB)
(1)
(2)
−60
48
(3)
(4)
52
Vo
(dBmV)
(2)
−60
(3)
(4)
48
−70
44
−70
44
−80
40
−80
40
36
1000
800
f (MHz)
−90
−90
200
0
400
600
0
200
400
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.5
Fig.6
Composite triple beat as a function of
frequency under tilted conditions.
mda933
−50
CSO
(dB)
(1)
−60
52
Vo
(dBmV)
48
(2)
−70
44
(3)
(4)
−80
−90
40
0
200
400
600
36
800
1000
f (MHz)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs;
tilt = 12.5 dB; (50 to 860 MHz).
(1) Vo.
(3) Typ.
(2) Typ. +3 σ.
(4) Typ. −3 σ.
Fig.7
Composite second order distortion as a
function of frequency under tilted
conditions.
2001 Nov 01
6
600
36
800
1000
f (MHz)
Cross modulation as a function of frequency
under tilted conditions.
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD904; BGD904MI
mda937
−20
mda938
−20
CTB
(dB)
−30
CSO
(dB)
−40
−40
−50
−60
−60
(2)
(1)
(2)
(3)
−70
40
(1)
(3)
45
50
Vo (dBmV)
−80
40
55
45
50
Vo (dBmV)
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 859.25 MHz.
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
ZS = ZL = 75 Ω; VB = 24 V; 129 chs; fm = 860.5 MHz.
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
Fig.8
Fig.9
Composite triple beat as a function of output
voltage.
2001 Nov 01
7
55
Composite second order distortion as a
function of output voltage.
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD904; BGD904MI
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads
SOT115J
D
E
Z
p
A2
1
2
3
5
7
8
9
A
L
F
S
W
c
e
b
w M
e1
d
U2
q2
Q
B
y M B
q1
x M B
y M B
p
U1
q
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A2
A
max. max.
mm 20.8
9.5
OUTLINE
VERSION
b
c
D
max.
d
E
max.
e
e1
F
L
min.
p
4.15
2.04
0.51
0.25 27.2
13.75 2.54 5.08 12.7 8.8
3.85
2.54
0.38
REFERENCES
IEC
JEDEC
JEITA
q
q1
q2
S
U1
U2
W
w
x
2.4 38.1 25.4 10.2 4.2 44.75 8.2 6-32 0.25 0.7
44.25 7.8 UNC
EUROPEAN
PROJECTION
y
Z
max.
0.1
3.8
ISSUE DATE
04-02-04
10-06-18
SOT115J
2001 Nov 01
Q
max.
8
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD904; BGD904MI
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Qualification
This document contains data from the preliminary specification.
Product data sheet
Production
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
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Limited warranty and liability ⎯ Information in this
document is believed to be accurate and reliable.
However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to
the accuracy or completeness of such information and
shall have no liability for the consequences of use of such
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Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
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Semiconductors product is suitable and fit for the
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reserves the right to make changes to information
published in this document, including without limitation
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of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
2001 Nov 01
9
NXP Semiconductors
Product specification
860 MHz, 20 dB gain power doubler
amplifier
BGD904; BGD904MI
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) will cause permanent damage to
the device. Limiting values are stress ratings only and
(proper) operation of the device at these or any other
conditions above those given in the Recommended
operating conditions section (if present) or the
Characteristics sections of this document is not warranted.
Constant or repeated exposure to limiting values will
permanently and irreversibly affect the quality and
reliability of the device.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Non-automotive qualified products ⎯ Unless this data
sheet expressly states that this specific NXP
Semiconductors product is automotive qualified, the
product is not suitable for automotive use. It is neither
qualified nor tested in accordance with automotive testing
or application requirements. NXP Semiconductors accepts
no liability for inclusion and/or use of non-automotive
qualified products in automotive equipment or
applications.
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Semiconductors products are sold subject to the general
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http://www.nxp.com/profile/terms, unless otherwise
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purchase of NXP Semiconductors products by customer.
In the event that customer uses the product for design-in
and use in automotive applications to automotive
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Semiconductors’ standard warranty and NXP
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national authorities.
2001 Nov 01
10
NXP Semiconductors
provides High Performance Mixed Signal and Standard Product
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Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
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Printed in The Netherlands
613518/07/pp11
Date of release: 2001 Nov 01
Document order number:
9397 750 08858
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