DC COMPONENTS CO., LTD. BC328 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for driver and output stage of audio amplifiers. TO-92 Pinning .190(4.83) .170(4.33) 1 = Collector 2 = Base 3 = Emitter o 2 Typ .190(4.83) .170(4.33) o 2 Typ .500 Min (12.70) Absolute Maximum Ratings(TA=25oC) Symbol Rating Unit Collector-Base Voltage Characteristic VCBO -30 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -5 V Collector Current IC -800 mA Total Power Dissipation PD 625 mW Junction Temperature TJ +150 o Storage Temperature TSTG -55 to +150 o .022(0.56) .014(0.36) .050 Typ (1.27) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) 3 2 1 .050 o o 5 Typ. 5 Typ. (1.27) Typ C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Max Unit Collector-Base Breakdown Volatge BVCBO -30 - - V Collector-Emitter Breakdown Voltage BVCEO -25 - - V IC=-10mA, IB=0 Emitter-Base Breakdown Volatge BVEBO -5 - - V IE=-100µA, IC=0 ICBO - - -0.1 µA VCB=-25V, IE=0 Collector Cutoff Current Test Conditions IC=-100µA, IE=0 IEBO - - -0.1 µA VEB=-4V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - -0.7 V IC=-500mA, IB=-50mA Base-Emitter On Voltage(1) VBE(on) - - -1.2 V IC=-300mA, VCE=-1V hFE1 100 - 630 - IC=-100mA, VCE=-1V hFE2 40 - - - IC=-300mA, VCE=-1V Emitter Cutoff Current DC Current Gain(1) Transition Frequency fT - 100 - MHz Output Capacitance Cob - 12 - pF (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% Classification of hFE1 Rank 16 25 40 Range 100~250 160~400 250~630 IC=-10mA, VCE=-5V, f=100MHz VCB=-10V, f=1MHz, IC=0