Bourns BD543 Npn silicon power transistor Datasheet

BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
●
Designed for Complementary Use with the
BD544 Series
●
70 W at 25°C Case Temperature
●
8 A Continuous Collector Current
B
1
●
10 A Peak Collector Current
C
2
●
Customer-Specified Selections Available
E
3
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
RATING
SYMBOL
Collector-base voltage (IE = 0)
BD543B
Collector-emitter voltage (IB = 0)
V CBO
60
80
BD543C
100
BD543
40
BD543A
BD543B
UNIT
40
BD543
BD543A
VALUE
VCEO
60
80
V
V
100
BD543C
VEBO
5
IC
8
A
Peak collector current (see Note 1)
ICM
10
A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)
Ptot
70
W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)
Ptot
2
W
Operating free air temperature range
TA
-65 to +150
°C
°C
Emitter-base voltage
Continuous collector current
Operating junction temperature range
Storage temperature range
Lead temperature 3.2 mm from case for 10 seconds
V
Tj
-65 to +150
Tstg
-65 to +150
°C
TL
260
°C
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.56 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
1
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
electrical characteristics at 25°C case temperature
PARAMETER
V(BR)CEO
ICES
ICEO
IEBO
hFE
V CE(sat)
VBE
hfe
|hfe |
Collector-emitter
breakdown voltage
TEST CONDITIONS
IC = 30 mA
MIN
IB = 0
(see Note 4)
BD543
40
BD543A
60
BD543B
80
BD543C
100
TYP
MAX
V
VCE = 40 V
VBE = 0
BD543
0.4
Collector-emitter
VCE = 60 V
VBE = 0
BD543A
0.4
cut-off current
VCE = 80 V
VBE = 0
BD543B
0.4
VCE = 100 V
VBE = 0
BD543C
0.4
Collector cut-off
VCE = 30 V
IB = 0
BD543/543A
0.7
current
VCE = 60 V
IB = 0
BD543B/543C
0.7
VEB =
5V
IC = 0
Emitter cut-off
current
Forward current
transfer ratio
Collector-emitter
saturation voltage
Base-emitter
voltage
Small signal forward
current transfer ratio
Small signal forward
current transfer ratio
1
VCE =
4V
IC = 1 A
VCE =
4V
IC =
3A
VCE =
4V
IC =
5A
IB =
0.3 A
IC =
3A
IB =
1A
IC =
5A
IB =
1.6 A
IC =
8A
4V
IC =
5A
VCE =
UNIT
mA
mA
mA
60
(see Notes 4 and 5)
40
15
0.5
(see Notes 4 and 5)
0.5
V
1
(see Notes 4 and 5)
1.4
VCE = 10 V
IC = 0.5 A
f = 1 kHz
20
VCE = 10 V
IC = 0.5 A
f = 1 MHz
3
V
NOTES: 4. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
5. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
thermal characteristics
MAX
UNIT
RθJC
Junction to case thermal resistance
PARAMETER
MIN
TYP
1.79
°C/W
RθJA
Junction to free air thermal resistance
62.5
°C/W
MAX
UNIT
resistive-load-switching characteristics at 25°C case temperature
PARAMETER
†
TEST CONDITIONS
†
MIN
ton
Turn-on time
IC = 6 A
IB(on) = 0.6 A
IB(off) = -0.6 A
toff
Turn-off time
VBE(off) = -4 V
RL = 5 Ω
tp = 20 µs, dc ≤ 2%
0.6
µs
1
µs
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
2
TYP
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCS633AI
hFE - DC Current Gain
VCE = 4 V
TC = 25°C
tp = 300 µs, duty cycle < 2%
100
10
1·0
0·1
1·0
IC = 300 mA
IC = 1 A
IC = 3 A
IC = 6 A
1·0
0·1
0·01
0·001
10
TCS633AE
10
VCE(sat) - Collector-Emitter Saturation Voltage - V
1000
IC - Collector Current - A
0·01
0·1
1·0
10
IB - Base Current - A
Figure 1.
Figure 2.
BASE-EMITTER VOLTAGE
vs
COLLECTOR CURRENT
1·2
TCS633AF
VBE - Base-Emitter Voltage - V
VCE = 4 V
TC = 25°C
1·1
1·0
0·9
0·8
0·7
0·6
0·1
1·0
10
IC - Collector Current - A
Figure 3.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
3
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
MAXIMUM SAFE OPERATING REGIONS
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
IC - Collector Current - A
10
SAS633AF
1·0
0·1
0·01
1·0
BD543
BD543A
BD543B
BD543C
10
100
1000
VCE - Collector-Emitter Voltage - V
Figure 4.
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TIS633AD
Ptot - Maximum Power Dissipation - W
80
70
60
50
40
30
20
10
0
0
25
50
75
100
125
150
TC - Case Temperature - °C
Figure 5.
4
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
BD543, BD543A, BD543B, BD543C
NPN SILICON POWER TRANSISTORS
MECHANICAL DATA
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
TO220
4,70
4,20
ø
10,4
10,0
3,96
3,71
1,32
1,23
2,95
2,54
see Note B
6,6
6,0
15,90
14,55
see Note C
6,1
3,5
1,70
1,07
0,97
0,61
1
2
14,1
12,7
3
2,74
2,34
5,28
4,88
VERSION 1
0,64
0,41
2,90
2,40
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
JUNE 1973 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MDXXBE
5
Similar pages