Vishay MBR10H150CT Dual common-cathode high-voltage schottky rectifier Datasheet

MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
Dual Common-Cathode High-Voltage Schottky Rectifier
Low Leakage Current 5.0 µA
FEATURES
ITO-220AB
TO-220AB
• Guardring for overvoltage protection
• Low power loss, high efficiency
• Low forward voltage drop
• High frequency operation
1
2
3
1
2
• Solder dip 260 °C, 40 seconds
3
MBRF10H150CT
MBR10H150CT
• Component in accordance to RoHS 2002/95/EC
TO-262AA
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency inverters, free-wheeling and
polarity protection applications.
1
3
2
SB10H150CT-1
PIN 1
PIN 2
PIN 3
CASE
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-262AA
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
PRIMARY CHARACTERISTICS
IF(AV)
2x5A
J-STD-002B and JESD22-B102D
VRRM
150 V
E3 suffix for commercial grade
IFSM
160 A
VF
0.72 V
Tj
175 °C
Mounting Torque: 10 in-lbs maximum
Polarity: As marked
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR10H150CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
150
V
Working peak reverse voltage
VRWM
150
V
Maximum DC blocking voltage
VDC
150
V
Total device
per diode
IF(AV)
10
5
A
Peak forward surge current 8.3 ms single half sine-wave superimposed on
rated load per diode
IFSM
160
A
Peak repetitive reverse current per diode at tp = 2 µs, 1 kHz
IRRM
1.0
A
Peak non-repetitive reverse surge energy per diode (8/20 µs waveform)
ERSM
10
mJ
Maximum average forward rectified current (see Fig. 1)
Non-repetitive avalanche energy per diode at 25 °C, IAS = 1.5 A, L = 10 mH
EAS
11.25
mJ
Voltage rate of change (rated VR)
dv/dt
10000
V/µs
TJ, TSTG
- 65 to + 175
°C
VAC
1500
V
Operating junction and storage temperature range
Isolation voltage (ITO-220AB only)
From terminals to heatsink t = 1 minute
Document Number: 88779
Revision: 27-Jul-07
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MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
at IF = 5.0 A, TJ = 25 °C
Maximum instantaneous
forward voltage per diode (1)
at IF = 5.0 A, TJ = 125 °C
0.72
VF
at IF = 10 A, TJ = 25 °C
V
0.96
at IF = 10 A, TJ = 125 °C
Maximum reverse current per
diode at working peak reverse
voltage (1)
UNIT
0.88
0.80
TJ = 25 °C
5.0
IR
TJ = 125 °C
µA
mA
1.0
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
RθJC
2.4
4.5
2.4
°C/W
Typical thermal resistance per diode
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AB
MBR10H150CT-E3/45
2.06
45
50/Tube
Tube
ITO-220AB
MBRF10H150CT-E3/45
2.20
45
50/Tube
Tube
TO-262AA
SB10H150CT-1E3/45
1.58
45
50/Tube
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
200
Peak Forward Surge Current (A)
Average Forward Current (A)
MBR, MBRB
10
MBRF
8
6
4
2
TJ = TJ max.
8.3 ms Single Half Sine-Wave
180
160
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
Case Temperature (°C)
Figure 1. Forward Derating Curve (Total)
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2
175
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Document Number: 88779
Revision: 27-Jul-07
MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
10000
Junction Capacitance (pF)
Instantaneous Forward Current (A)
100
TJ = 175 °C
10
TJ = 125 °C
TJ = 75 °C
1
1000
100
TJ = 25 °C
0.1
10
0.1
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
100
Figure 5. Typical Junction Capacitance Per Diode
10000
100
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (µA)
10
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
TJ = 175 °C
1000
TJ = 125 °C
100
10
TJ = 75 °C
1
TJ = 25 °C
0.1
0.01
10
20
30
40
50
60
70
80
90
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics Per Diode
Document Number: 88779
Revision: 27-Jul-07
10
MBRF
MBR, MBRB
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 6. Typical Transient Thermal Impedance Per Diode
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MBR10H150CT, MBRF10H150CT & SB10H150CT-1
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AB
T O -220AB
0.055 (1.40)
0.047 (1.20)
0.398 (10.10)
0.382 (9.70)
0.343 (8.70)
Typ.
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.150 (3.80) Dia.
0.139 (3.54)
0.114 (2.90)
0.106 (2.70)
0.408 (10.36)
0.392 (9.96)
1.29 (3.28)
Dia.
1.21 (3.08)
0.138 (3.50)
0.122 (3.10)
0.154 (3.90)
0.138 (3.50)
0.067
(1.70) Typ.
0.331 (8.40)
Typ.
1
PIN
2 3
0.118
(3.00) Typ.
0.634 (16.10)
0.618 (15.70)
0.270 (6.88)
0.255 (6.48)
0.638 (16.20)
0.598 (15.20)
0.370 (9.40)
0.354 (9.00)
0.630 (16.00)
0.614 (15.60)
1.161 (29.48)
1.106 (28.08)
1
0.102 (2.60)
0.087 (2.20)
PIN
2
0.264 (6.70)
0.248 (6.50)
0.320 (8.12)
0.304 (7.72)
0.100
(2.54) Typ.
0.633 (16.07)
0.601 (15.67)
3
0.523 (13.28)
0.507 (12.88)
0.117 (2.96)
0.101 (2.56)
0.035 (0.90)
0.028 (0.70)
0.064 (1.62)
0.056 (1.42)
0.200 (5.08) Typ.
0.193 (4.90)
0.177 (4.50)
0.108 (2.74)
0.092 (2.34)
0.396 (10.05)
0.372 (9.45)
0.024 (0.60)
0.018 (0.45)
0.039 (1.00)
0.024 (0.60)
0.100
(2.54) Typ.
0.058 (1.47) Max.
0.200 (5.08) Typ.
0.024 (0.60)
0.018 (0.45)
TO-262AA
0.398 (10.10)
0.382 (9.70)
0.055 (1.40)
0.039 (1.00)
K
0.370 (9.40)
0.354 (9.00)
1
PIN
2
3
0.185 (4.70)
0.169 (4.30)
0.055 (1.40)
0.049 (1.25)
0.425 (10.80)
0.393 (10.00)
0.488 (12.4)
0.472 (12.00)
0.102 (2.60)
0.087 (2.20)
0.035 (0.90)
0.028 (0.70)
0.100
(2.54) Typ.
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0.523 (13.28)
0.507 (12.88)
0.405 (10.28)
0.389 (9.88)
0.062 (1.57)
0.054 (1.37)
0.024 (0.60)
0.018 (0.45)
0.200 (5.08) Typ.
Document Number: 88779
Revision: 27-Jul-07
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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