E2 MMPQ3904 C2 B2 E1 C1 C1 E1 C2 SC70-6 Mark: .1A B2 E3 E4 B4 B2 B1 pin #1 B1 E2 B3 E2 E1 pin #1 B1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. SuperSOT-6 Mark: .1A pin #1 C1 SOIC-16 C2 C1 C3 C2 C4 C4 C3 Mark: MMPQ3904 FFB3904 / FMB3904 / MMPQ3904 FMB3904 FFB3904 Dot denotes pin #1 NPN Multi-Chip General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Effective 4 Die Each Die 1998 Fairchild Semiconductor Corporation Max FFB3904 300 2.4 415 FMB3904 700 5.6 180 Units MMPQ3904 1,000 8.0 125 240 mW mW/°C °C/W °C/W °C/W 4 (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 1.0 mA, IB = 0 40 V V(BR)CBO Collector-Base Breakdown Voltage IC = 10 µA, IE = 0 60 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 10 µA, IC = 0 6.0 IBL Base Cutoff Current VCE = 30 V, VEB = 0 50 nA ICEX Collector Cutoff Current VCE = 30 V, VEB = 0 50 nA V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage VBE(sat) Base-Emitter Saturation Voltage SMALL SIGNAL CHARACTERISTICS fT Current Gain - Bandwidth Product Cobo Output Capacitance Cibo Input Capacitance IC = 0.1 mA, VCE = 1.0 V MMPQ3904 IC = 1.0 mA, VCE = 1.0 V MMPQ3904 IC = 10 mA, VCE = 1.0 V MMPQ3904 IC = 50 mA, VCE = 1.0 V IC = 100 mA, VCE = 1.0 V IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 40 30 70 50 100 75 60 30 300 0.2 0.3 0.85 0.95 0.65 V V V V (MMPQ3904 only) IC = 10 mA, VCE = 20 V, f = 100 MHz VCB = 5.0 V, IE = 0, f = 140 kHz VEB = 0.5 V, IC = 0, f = 140 kHz *Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% NOTE: All voltages (V) and currents (A) are negative polarity for PNP transistors. 250 MHz 4.0 pF 8.0 pF FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) V CE = 5V 400 125 °C 300 25 °C 200 - 40 °C 100 0 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 Base-Emitter Saturation Voltage vs Collector Current 1 0.8 β = 10 - 40 °C 25 °C 0.6 125 °C 0.4 0.1 IC 1 10 - COLLECTOR CURRENT (mA) 100 VCESAT- COLLECTOR-EMITTER VOLTAGE (V) 500 VBE(ON)- BASE-EMITTER ON VOLTAGE (V) Typical Pulsed Current Gain vs Collector Current VBESAT- BASE-EMITTER VOLTAGE (V) h FE - TYP ICAL PULSED CURRE NT GAIN Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 0.15 125 °C 0.1 25 °C 0.05 - 40 °C 0.1 1 VCE = 5V 0.8 - 40 °C 25 °C 0.6 125 °C 4 0.4 0.2 0.1 1 10 I C - COLLECTOR CURRENT (mA) 100 10 f = 1.0 MHz VCB = 30V CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) 100 Capacitance vs Reverse Bias Voltage 500 10 1 0.1 25 1 10 I C - COLLECTOR CURRENT (mA) Base-Emitter ON Voltage vs Collector Current Collector-Cutoff Current vs Ambient Temperature 100 β = 10 50 75 100 125 TA - AMBIENT TEMPERATURE ( °C) 150 FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier 5 4 3 C ibo 2 C obo 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 (continued) Typical Characteristics (continued) Noise Figure vs Source Resistance Noise Figure vs Frequency 12 I C = 1.0 mA R S = 200Ω 10 V CE = 5.0V I C = 1.0 mA NF - NOISE FIGURE (dB) NF - NOISE FIGURE (dB) 12 I C = 50 µA R S = 1.0 kΩ 8 I C = 0.5 mA R S = 200Ω 6 4 2 I C = 100 µA, R S = 500 Ω 0 0.1 1 10 f - FREQUENCY (kHz) 10 I C = 5.0 mA I C = 50 µA 8 6 I C = 100 µA 4 2 0 0.1 100 1 10 R S - SOURCE RESISTANCE ( kΩ ) Power Dissipation vs Ambient Temperature θ V CE = 40V I C = 10 mA 1 10 100 f - FREQUENCY (MHz) PD - POWE R DIS SIPATION (W) fe h 0 20 40 60 80 100 120 140 160 180 h fe θ - DEGREES - CURRENT GAIN (dB) Current Gain and Phase Angle vs Frequency 50 45 40 35 30 25 20 15 10 5 0 1 SOIC-16 0.5 SC70 -6 0.25 0 Turn-On Time vs Collector Current Ic VCC = 40V TIME (nS) 15V 2.0V 10 10 I C - COLLECTOR CURRENT (mA) 125 150 100 I B1 = I B2 = Ic 10 T J = 25°C T J = 125°C 10 t d @ VCB = 0V 1 50 75 100 TE MPE RATURE (°C) 10 t r @ V CC = 3.0V 5 25 Rise Time vs Collector Current 40V 100 0 500 t r - RISE TIME (ns) I B1 = I B2 = SOT-6 0.75 1000 500 100 100 5 1 10 I C - COLLECTOR CURRENT (mA) 100 FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier (continued) Typical Characteristics (continued) Storage Time vs Collector Current I B1 = I B2 = T J = 25°C Fall Time vs Collector Current 500 Ic I B1 = I B2 = 10 t f - FALL TIME (ns) t S - STORAGE TIME (ns) 500 100 T J = 125°C 10 5 T J = 125°C 100 T J = 25°C 1 10 I C - COLLECTOR CURRENT (mA) 5 100 1 10 I C - COLLECTOR CURRENT (mA) Current Gain h oe - OUTPUT ADMITTANCE (µ mhos) V CE = 10 V f = 1.0 kHz T A = 25oC 100 10 0.1 1 I C - COLLECTOR CURRENT (mA) 10 _ Input Impedance 100 V CE = 10 V f = 1.0 kHz T A = 25oC 10 1 0.1 0.1 100 Output Admittance h re - VOLTAGE FE EDBACK RATIO (x10 4 ) h fe - CURRENT GAIN VCC = 40V 10 500 h ie - INPUT IMPEDANCE (kΩ ) Ic 10 FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier 1 I C - COLLECTOR CURRENT (mA) 10 100 V CE = 10 V f = 1.0 kHz T A = 25oC 10 4 1 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Voltage Feedback Ratio 10 7 V CE = 10 V f = 1.0 kHz T A = 25oC 5 4 3 2 1 0.1 1 I C - COLLE CTOR CURRENT (mA) 10 (continued) Test Circuits 3.0 V 275 Ω 300 ns 10.6 V Duty Cycle = 2% Ω 10 KΩ 0 C1 < 4.0 pF - 0.5 V < 1.0 ns FIGURE 1: Delay and Rise Time Equivalent Test Circuit 3.0 V 10 < t1 < 500 µs t1 10.9 V 275 Ω Duty Cycle = 2% Ω 10 KΩ 0 C1 < 4.0 pF 1N916 - 9.1 V < 1.0 ns FIGURE 2: Storage and Fall Time Equivalent Test Circuit FFB3904 / FMB3904 / MMPQ3904 NPN Multi-Chip General Purpose Amplifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G