Vishay BYM36C Fast avalanche sinterglass diode Datasheet

BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
Vishay Semiconductors
Fast Avalanche Sinterglass Diode
FEATURES
• Glass passivated
• Hermetically sealed package
• Very low switching losses
• Low reverse current
• High reverse voltage
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
949588
MECHANICAL DATA
• Halogen-free according to IEC 61249-2-21 definition
Case: SOD-64
APPLICATIONS
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
• Switched mode power supplies
• High-frequency inverter circuits
Mounting position: any
Weight: approx. 858 mg
PARTS TABLE
PART
TYPE DIFFERENTIATION
PACKAGE
BYM36A
VR = 200 V; IFAV = 3 A
SOD-64
BYM36B
VR = 400 V; IFAV = 3 A
SOD-64
BYM36C
VR = 600 V; IFAV = 3 A
SOD-64
BYM36D
VR = 800 V; IFAV = 2.9 A
SOD-64
BYM36E
VR = 1000 V; IFAV = 2.9 A
SOD-64
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
Reverse voltage = repetitive
peak reverse voltage
Peak forward surge current
See electrical characteristics
SYMBOL
VALUE
UNIT
VR = VRRM
200
V
BYM36B
VR = VRRM
400
V
BYM36C
VR = VRRM
600
V
BYM36D
VR = VRRM
800
V
BYM36E
VR = VRRM
1000
V
IFSM
65
A
tp = 10 ms, half sine wave
Average forward current
Non repetitive reverse
avalanche energy
PART
BYM36A
BYM36A
IFAV
3
A
BYM36B
IFAV
3
A
BYM36C
IFAV
3
A
BYM36D
IFAV
2.9
A
BYM36E
IFAV
2.9
A
ER
20
mJ
Tj = Tstg
- 55 to + 175
°C
I(BR)R = 1 A, inductive load
Junction and storage
temperature range
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER
Junction ambient
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108
TEST CONDITION
SYMBOL
VALUE
UNIT
Lead length l = 10 mm, TL = constant
RthJA
25
K/W
On PC board with spacing 25 mm
RthJA
70
K/W
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86012
Rev. 1.7, 25-Aug-10
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
Fast Avalanche Sinterglass Diode
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
IF = 3 A
Forward voltage
IF = 3 A, Tj= 175 °C
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
BYM36A
VF
-
-
1.6
V
BYM36B
VF
-
-
1.6
V
BYM36C
VF
-
-
1.6
V
BYM36D
VF
-
-
1.78
V
BYM36E
VF
-
-
1.78
V
BYM36A
VF
-
-
1.22
V
BYM36B
VF
-
-
1.22
V
BYM36C
VF
-
-
1.22
V
BYM36D
VF
-
-
1.28
V
BYM36E
VF
-
-
1.28
V
IR
-
-
5
μA
VR = VRRM
Reverse current
VR = VRRM, Tj = 150 °C
IF = 0.5 A, IR = 1 A, iR = 0.25 A
Reverse recovery time
IR = 100 μA
Reverse breakdown voltage
IR
-
-
100
μA
BYM36A
trr
-
-
100
ns
BYM36B
trr
-
-
100
ns
BYM36C
trr
-
-
100
ns
BYM36D
trr
-
-
150
ns
BYM36E
trr
-
-
150
ns
BYM36A
V(BR)R
300
-
-
V
BYM36B
V(BR)R
500
-
-
V
BYM36C
V(BR)R
700
-
-
V
BYM36D
V(BR)R
900
-
-
V
BYM36E
V(BR)R
1100
-
-
V
4
600
RthJA = 25 K/W
500
1000 V
RthJA = 70 K/W
400
800 V
300
600 V
200
400 V
100
200 V
0
IFAV - Average Forward Current (A)
PR - Max. Reverse Power Dissipation (mW)
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
BYM36A, BYM36B, BYM36C
3
RthJA = 25 K/W
2
RthJA = 70 K/W
1
VR = VRRM
half sinewave
0
0
959705
40
80
120
160
200
Tj - Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature
Document Number: 86012
Rev. 1.7, 25-Aug-10
0
959706
40
80
120
160
200
Tamb - Ambient Temperature (°C)
Fig. 2 - Max. Average Forward Current vs. Ambient Temperature
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
109
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
Fast Avalanche Sinterglass Diode
Vishay Semiconductors
100
BYM36D, BYM36E
IF - Forward Current (A)
IFAV - Average Forward Current (A)
4
3
RthJA = 25 K/W
2
RthJA = 70 K/W
1
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
VR = VRRM
half sinewave
BYM36D, BYM36E
0.001
0
0
40
80
120
160
0
200
Tamb - Ambient Temperature (°C)
959707
959709
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
1
2
3
4
VF - Forward Voltage (V)
Fig. 6 - Max. Forward Current vs. Forward Voltage
1000
90
CD - Diode Capacitance (pF)
IR - Reverse Current (μA)
10
100
10
VR = VRRM
1
70
60
50
40
30
20
10
0
0.1
0.1
0
40
80
120
160
200
Tj - Junction Temperature (°C)
959704
16302
Fig. 4 - Max. Reverse Current vs. Junction Temperature
f = 1 MHz
80
1
10
100
VR - Reverse Voltage (V)
Fig. 7 - Diode Capacitance vs. Reverse Voltage
IF - Forward Current (A)
100
10
Tj = 175 °C
1
Tj = 25 °C
0.1
0.01
BYM36A, BYM36B, BYM36C
0.001
0
959708
1
2
3
4
VF - Forward Voltage (V)
Fig. 5 - Max. Forward Current vs. Forward Voltage
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110
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 86012
Rev. 1.7, 25-Aug-10
BYM36A, BYM36B, BYM36C, BYM36D, BYM36E
Fast Avalanche Sinterglass Diode
Vishay Semiconductors
PACKAGE DIMENSIONS in millimeters (inches): SOD-64
Sintered Glass Case
SOD-64
Cathode Identification
4.3 (0.168) max.
1.35 (0.053) max.
26(1.014) min.
4 (0.156) max.
26 (1.014) min.
Document-No.: 6.563-5006.4-4
Rev. 3 - Date: 09.February.2005
94 9587
Document Number: 86012
Rev. 1.7, 25-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
111
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Document Number: 91000
Revision: 11-Mar-11
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