BYM36A, BYM36B, BYM36C, BYM36D, BYM36E Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES • Glass passivated • Hermetically sealed package • Very low switching losses • Low reverse current • High reverse voltage • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949588 MECHANICAL DATA • Halogen-free according to IEC 61249-2-21 definition Case: SOD-64 APPLICATIONS Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end • Switched mode power supplies • High-frequency inverter circuits Mounting position: any Weight: approx. 858 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYM36A VR = 200 V; IFAV = 3 A SOD-64 BYM36B VR = 400 V; IFAV = 3 A SOD-64 BYM36C VR = 600 V; IFAV = 3 A SOD-64 BYM36D VR = 800 V; IFAV = 2.9 A SOD-64 BYM36E VR = 1000 V; IFAV = 2.9 A SOD-64 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage = repetitive peak reverse voltage Peak forward surge current See electrical characteristics SYMBOL VALUE UNIT VR = VRRM 200 V BYM36B VR = VRRM 400 V BYM36C VR = VRRM 600 V BYM36D VR = VRRM 800 V BYM36E VR = VRRM 1000 V IFSM 65 A tp = 10 ms, half sine wave Average forward current Non repetitive reverse avalanche energy PART BYM36A BYM36A IFAV 3 A BYM36B IFAV 3 A BYM36C IFAV 3 A BYM36D IFAV 2.9 A BYM36E IFAV 2.9 A ER 20 mJ Tj = Tstg - 55 to + 175 °C I(BR)R = 1 A, inductive load Junction and storage temperature range MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified) PARAMETER Junction ambient www.vishay.com 108 TEST CONDITION SYMBOL VALUE UNIT Lead length l = 10 mm, TL = constant RthJA 25 K/W On PC board with spacing 25 mm RthJA 70 K/W For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 86012 Rev. 1.7, 25-Aug-10 BYM36A, BYM36B, BYM36C, BYM36D, BYM36E Fast Avalanche Sinterglass Diode Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION IF = 3 A Forward voltage IF = 3 A, Tj= 175 °C PART SYMBOL MIN. TYP. MAX. UNIT BYM36A VF - - 1.6 V BYM36B VF - - 1.6 V BYM36C VF - - 1.6 V BYM36D VF - - 1.78 V BYM36E VF - - 1.78 V BYM36A VF - - 1.22 V BYM36B VF - - 1.22 V BYM36C VF - - 1.22 V BYM36D VF - - 1.28 V BYM36E VF - - 1.28 V IR - - 5 μA VR = VRRM Reverse current VR = VRRM, Tj = 150 °C IF = 0.5 A, IR = 1 A, iR = 0.25 A Reverse recovery time IR = 100 μA Reverse breakdown voltage IR - - 100 μA BYM36A trr - - 100 ns BYM36B trr - - 100 ns BYM36C trr - - 100 ns BYM36D trr - - 150 ns BYM36E trr - - 150 ns BYM36A V(BR)R 300 - - V BYM36B V(BR)R 500 - - V BYM36C V(BR)R 700 - - V BYM36D V(BR)R 900 - - V BYM36E V(BR)R 1100 - - V 4 600 RthJA = 25 K/W 500 1000 V RthJA = 70 K/W 400 800 V 300 600 V 200 400 V 100 200 V 0 IFAV - Average Forward Current (A) PR - Max. Reverse Power Dissipation (mW) TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) BYM36A, BYM36B, BYM36C 3 RthJA = 25 K/W 2 RthJA = 70 K/W 1 VR = VRRM half sinewave 0 0 959705 40 80 120 160 200 Tj - Junction Temperature (°C) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Document Number: 86012 Rev. 1.7, 25-Aug-10 0 959706 40 80 120 160 200 Tamb - Ambient Temperature (°C) Fig. 2 - Max. Average Forward Current vs. Ambient Temperature For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 109 BYM36A, BYM36B, BYM36C, BYM36D, BYM36E Fast Avalanche Sinterglass Diode Vishay Semiconductors 100 BYM36D, BYM36E IF - Forward Current (A) IFAV - Average Forward Current (A) 4 3 RthJA = 25 K/W 2 RthJA = 70 K/W 1 Tj = 175 °C 1 Tj = 25 °C 0.1 0.01 VR = VRRM half sinewave BYM36D, BYM36E 0.001 0 0 40 80 120 160 0 200 Tamb - Ambient Temperature (°C) 959707 959709 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1 2 3 4 VF - Forward Voltage (V) Fig. 6 - Max. Forward Current vs. Forward Voltage 1000 90 CD - Diode Capacitance (pF) IR - Reverse Current (μA) 10 100 10 VR = VRRM 1 70 60 50 40 30 20 10 0 0.1 0.1 0 40 80 120 160 200 Tj - Junction Temperature (°C) 959704 16302 Fig. 4 - Max. Reverse Current vs. Junction Temperature f = 1 MHz 80 1 10 100 VR - Reverse Voltage (V) Fig. 7 - Diode Capacitance vs. Reverse Voltage IF - Forward Current (A) 100 10 Tj = 175 °C 1 Tj = 25 °C 0.1 0.01 BYM36A, BYM36B, BYM36C 0.001 0 959708 1 2 3 4 VF - Forward Voltage (V) Fig. 5 - Max. Forward Current vs. Forward Voltage www.vishay.com 110 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 86012 Rev. 1.7, 25-Aug-10 BYM36A, BYM36B, BYM36C, BYM36D, BYM36E Fast Avalanche Sinterglass Diode Vishay Semiconductors PACKAGE DIMENSIONS in millimeters (inches): SOD-64 Sintered Glass Case SOD-64 Cathode Identification 4.3 (0.168) max. 1.35 (0.053) max. 26(1.014) min. 4 (0.156) max. 26 (1.014) min. Document-No.: 6.563-5006.4-4 Rev. 3 - Date: 09.February.2005 94 9587 Document Number: 86012 Rev. 1.7, 25-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 111 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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