Central CMPT3640 Surface mount pnp silicon transistor Datasheet

CMPT3640
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SURFACE MOUNT
PNP SILICON TRANSISTOR
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT3640 type is
a PNP silicon transistor manufactured by the epitaxial
planar process, epoxy molded in a surface mount
package, designed for saturated switching applications.
MARKING CODE: C2J
SOT-23 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
ΘJA
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
12
12
4.0
80
350
-65 to +150
357
UNITS
V
V
V
mA
mW
°C
°C/W
MAX
UNITS
10
nA
ICES
VCE=6.0V
ICES
IB
VCE=6.0V,
VCE=6.0V,
BVCBO
IC=100µA
12
V
BVCEO
IC=10mA
12
V
BVEBO
VCE(SAT)
IE=100µA
4.0
VCE(SAT)
VCE(SAT)
VBE(SAT)
VBE(SAT)
VBE(SAT)
hFE
hFE
fT
Cob
Cib
td
tr
TA=65°C
VEB=0
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
IC=10mA, IB=1.0mA, TA=65°C
IC=10mA, IB=0.5mA
10
µA
10
nA
V
0.20
V
0.60
V
0.25
V
0.75
0.95
V
IC=10mA, IB=1.0mA
IC=50mA, IB=5.0mA
0.80
1.00
V
1.50
V
VCE=0.3V, IC=10mA
VCE=1.0V, IC=50mA
30
VCE=5.0V, IC=10mA, f=100MHz
VCB=5.0V, IE=0, f=1.0MHz
500
VBE=0.5V, IC=0, f=1.0MHz
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
120
20
MHz
3.5
pF
3.5
pF
10
ns
30
ns
R5 (1-February 2010)
CMPT3640
SURFACE MOUNT
PNP SILICON TRANSISTOR
ELECTRICAL CHARACTERISTICS - Continued: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MAX
ts
UNITS
VCC=6.0V, IC=50mA, IB1=IB2=5.0mA
VCC=6.0V, IC=50mA, IB1=IB2=5.0mA
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
20
12
ns
25
ns
VCC=1.5V, IC=10mA, IB1=0.5mA
VCC=6.0V, VBE=1.9, IC=50mA, IB1=5.0mA
60
ns
toff
35
ns
toff
VCC=1.5V, IC=10mA, IB1=IB2=0.5mA
75
ns
tf
ton
ton
ns
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) Base
2) Emitter
3) Collector
MARKING CODE: C2J
R5 (1-February 2010)
w w w. c e n t r a l s e m i . c o m
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