IGBT Highspeed5FASTIGBTinTRENCHSTOPTM5technology IGW40N65F5A 650VIGBT Highspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGW40N65F5A Highspeedswitchingseriesfifthgeneration Highspeed5FASTIGBTinTRENCHSTOPTM5technology FeaturesandBenefits: C HighspeedF5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoAEC-Q101 •Greenpackage(RoHScompliant) •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Batterycharger •DC/DCconverter 1 Packagepindefinition: 2 3 •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type IGW40N65F5A VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 40A 1.6V 175°C G40EF5A PG-TO247-3 2 Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 3 Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 74.0 46.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 120.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 120.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 250.0 125.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C 2) Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.60 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.60 1.80 1.90 2.10 - Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 V Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - 40.0 1000.0 - µA Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 50.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 1) 2) V V Defined by design. Not subject to production test. Package not recommended for surface mount applications 4 Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2500 - - 50 - - 9 - - 95.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=40.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 19 - ns - 11 - ns - 165 - ns - 13 - ns - 0.35 - mJ - 0.10 - mJ - 0.45 - mJ - 18 - ns - 4 - ns - 175 - ns - 12 - ns - 0.07 - mJ - 0.03 - mJ - 0.10 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=25°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 18 - ns - 12 - ns - 195 - ns - 5 - ns - 0.46 - mJ - 0.16 - mJ - 0.62 - mJ - 16 - ns - 5 - ns - 225 - ns - 13 - ns - 0.14 - mJ - 0.05 - mJ - 0.19 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration 275 80 250 70 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 225 200 175 150 125 100 75 60 50 40 30 20 50 10 25 0 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 100 125 150 175 Figure 2. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) 120 120 100 100 VGE = 20V IC,COLLECTORCURRENT[A] VGE = 20V IC,COLLECTORCURRENT[A] 75 TC,CASETEMPERATURE[°C] Figure 1. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 18V 80 15V 12V 60 10V 8V 7V 40 6V 18V 80 15V 12V 60 10V 8V 7V 40 6V 5V 5V 20 0 50 20 0 1 2 3 4 0 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Typicaloutputcharacteristic (Tvj=25°C) Figure 4. Typicaloutputcharacteristic (Tvj=150°C) 7 Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration 120 2.50 VCEsat,COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=150°C IC,COLLECTORCURRENT[A] 100 80 60 40 20 0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 8.5 IC=10A IC=20A IC=40A 0 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaltransfercharacteristic (VCE=20V) 75 100 125 150 175 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] td(off) tf td(on) tr t,SWITCHINGTIMES[ns] 50 Figure 6. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 1000 100 10 1 25 Tvj,JUNCTIONTEMPERATURE[°C] 0 20 40 60 80 100 10 1 120 IC,COLLECTORCURRENT[A] Figure 7. Typicalswitchingtimesasafunctionof collectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 100 5 15 25 35 45 55 65 75 85 rG,GATERESISTOR[Ω] 8 Figure 8. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration 1000 5.5 VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 1 25 50 75 100 125 150 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 175 typ. min. max. 0 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,rG=15Ω,DynamictestcircuitinFigure E) 75 100 125 150 1.6 Eoff Eon Ets Eoff Eon Ets 1.4 E,SWITCHINGENERGYLOSSES[mJ] 7 E,SWITCHINGENERGYLOSSES[mJ] 50 Figure 10. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.4mA) 8 6 5 4 3 2 1 0 25 Tvj,JUNCTIONTEMPERATURE[°C] 1.2 1.0 0.8 0.6 0.4 0.2 0 20 40 60 80 100 0.0 120 IC,COLLECTORCURRENT[A] Figure 11. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 5 15 25 35 45 55 65 75 85 rG,GATERESISTOR[Ω] 9 Figure 12. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration 0.8 1.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 Eoff Eon Ets 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 25 50 75 100 125 150 0.0 200 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 13. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,rG=15Ω,Dynamictestcircuitin Figure E) 300 350 400 450 500 Figure 14. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=15/0V, IC=20A,rG=15Ω,Dynamictestcircuitin Figure E) 16 1E+4 VCC=130V VCC=520V Cies Coes Cres 14 12 1000 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 250 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 8 6 4 100 10 2 0 0 20 40 60 80 1 100 QGE,GATECHARGE[nC] 0 5 10 15 20 25 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalgatecharge (IC=40A) Figure 16. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 10 Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708 τi[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. IGBTtransientthermalimpedance (D=tp/T) 11 Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration PG-TO247-3 12 Rev.2.1,2014-12-15 IGW40N65F5A Highspeedswitchingseriesfifthgeneration VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 13 Rev.2.1,2014-12-15 IGW40N65F5A High speed switching series fifth generation Revision History IGW40N65F5A Revision: 2014-12-15, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-12-15 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 14 Rev. 2.1, 2014-12-15