MASWSS0181 GaAs SPDT 2.5 V High Power Switch DC - 3.0 GHz Features Rev. V2 Functional Schematic Low Voltage Operation: 2.5 V Harmonics: <-67 dBc at +34 dBm & 1 GHz Low Insertion Loss: 0.40 dB at 1 GHz High Isolation: 20 dB at 2 GHz 0.5 micron GaAs PHEMT Process Lead-Free SOT-26 Package 100% Matte Tin Plating over Copper Halogen-Free ―Green‖ Mold Compound 260°C Reflow Compatible RoHS* Compliant Version of MASWSS0006 PIN 1 PIN 6 RF1 V1 GND RFC RF2 V2 100pF 39 pF 39 pF 100pF 100pF 39 pF Description M/A-COM’s MASWSS0181 is a GaAs PHEMT MMIC single pole two throw (SPDT) high power switch in a lead-free SOT-26 package. The MASWSS0181 is ideally suited for applications where high power, low control voltage, low insertion loss, high isolation, small size and low cost are required. Typical applications are for GSM and DCS handset systems that connect separate transmit and receive functions to a common antenna, as well as other related handset and general purpose applications. This part can be used in all systems operating up to 3 GHz requiring high power at low control voltage. The MASWSS0181 is fabricated using a 0.5 micron gate length GaAs PHEMT process. The process features full passivation for performance and reliability. Ordering Information Part Number Package MASWSS0181 Bulk Packaging MASWSS0181TR 1000 piece reel MASWSS0181TR-3000 3000 piece reel MASWSS0181SMB Sample Test Board Pin Configuration Pin No. Pin Name Description 1 RF1 RF Port 1 2 GND RF Ground 3 RF2 RF Port 2 4 V2 Control 2 5 RFC RF Common Port 6 V1 Control 1 Absolute Maximum Ratings 1,2 Parameter Absolute Maximum Input Power (0.5 - 3 GHz, 2.5 V Control) +38 dBm Voltage ± 8.5 volts Operating Temperature -40°C to +85°C Storage Temperature -65°C to +150°C 1. Exceeding any one or combination of these limits may cause permanent damage to this device. 2. M/A-COM does not recommend sustained operation near these survivability limits. Note: Reference Application Note M513 for reel size information. 1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASWSS0181 GaAs SPDT 2.5 V High Power Switch DC - 3.0 GHz Rev. V2 Electrical Specifications: TA = 25°C, Vc = 0 V/2.5 V, Z0 = 50 Ohms3 Parameter Test Conditions Units Min. Typ. Max. DC – 1 GHz 1 – 2 GHz 2 - 3 GHz dB dB dB — — — 0.40 0.50 0.75 0.65 — — Isolation DC – 1 GHz 1 – 2 GHz 2 - 3 GHz dB dB dB 23.0 — — 26 20 16 — — — Return Loss DC – 2 GHz 2 - 3 GHz dB dB — — 20 16 — — IP3 Two Tone, +26 dBm/tone, 5 MHz Spacing > 50 MHz dBm — 57 — Insertion Loss 4 P0.1dB — dBm — 39 — nd 2 Harmonic 1 GHz, PIN = +34 dBm dBc — -75 — rd 3 Harmonic 1 GHz, PIN = +34 dBm dBc — -75 -67 Trise, Tfall 10% to 90% RF, 90% to 10% RF µS — 0.04 — Ton, Toff 50% control to 90% RF, and 50% control to 10% RF µS — 0.06 — Transients In Band mV — 50 — µA — — 50 Control Current 3. For positive voltage control, external DC blocking capacitors are required on all RF ports. 4. Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 500 MHz, 100 pF for 0.5 GHz - 3 GHz. Qualification Truth Table 5,6 Qualified to M/A-COM specification REL-201, Process Flow –2. Handling Procedures Please observe the following precautions to avoid damage: Static Sensitivity 5. 6. V1 V2 ANT– RF1 ANT - RF2 1 0 On Off 0 1 Off On Differential voltage, V(state 1) - V(state 0), must be +2.5 V minimum and must not exceed +8 V. 0 = -5 V to 2.5 V, 1 = -2.5 V to +5 V Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be damaged by static electricity. Proper ESD control techniques should be used when handling these devices. 2 M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASWSS0181 GaAs SPDT 2.5 V High Power Switch DC - 3.0 GHz Rev. V2 Typical Performance Curves vs. Temperature, 100 pF blocking capacitors Insertion Loss vs. Frequency Isolation vs. Frequency 2nd Harmonic vs. Control Voltage, Pin = 34 dBm CW, 1 GHz 3rd Harmonic vs. Control Voltage, Pin = 34 dBm CW, 1 GHz Lead-Free SOT-26 Plastic Package† † 3 Reference Application Note M538 for lead-free solder reflow recommendations. M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. For further information and support please visit: https://www.macom.com/support MASWSS0181 GaAs SPDT 2.5 V High Power Switch DC - 3.0 GHz Rev. V2 M/A-COM Technology Solutions Inc. All rights reserved. Information in this document is provided in connection with M/A-COM Technology Solutions Inc ("MACOM") products. 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