RF GRM55ER72A475KA01L 30mhz to 512mhz, 9w gan wideband Datasheet

RFHA1003
RFHA1003
30MHz to
512MHz, 9W
GaN Wideband Power
Amplifier
30MHz TO 512MHz, 9W GaN WIDEBAND
POWER AMPLIFIER
Package: AlN Leadless Chip Carrier / SO8
VGS
Pin 1
Features

Advanced GaN HEMT Technology

Output Power of 9W

Advanced Heat-Sink Technology



30MHz to 512MHz
Instantaneous Bandwidth
RF IN
Pin 2,3
RF OUT / VDS
Pin 6,7
Input Internally Matched to 50
GND
BASE
28V Operation Typical
Performance
Output Power 39.5dBm
Gain 19dB
 Power Added Efficiency 70%
-40°C to 85°C Operating
Temperature




Large Signal Models Available
Applications



Pre-Driver for Multiband Wireless
Infrastructure Transmitters
Class AB Operation for Public
Mobile Radio
Power Amplifier Stage for
Commercial Wireless
Infrastructure

General Purpose Tx Amplification

Test Instrumentation

Civilian and Military Radar
Functional Block Diagram
Product Description
The RFHA1003 is a wideband Power Amplifier designed for CW and pulsed applications such as wireless infrastructure, RADAR, two way radios and general purpose
amplification. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high-performance amplifiers achieve high efficiency, flat
gain, and large instantaneous bandwidth in a single amplifier design. The
RFHA1003 is an input matched GaN transistor packaged in an air cavity ceramic
package which provides excellent thermal stability through the use of advanced
heat sink and power dissipation technologies. Ease of integration is accomplished
through the incorporation of optimized input matching network within the package
that provides wideband gain and power performance in a single amplifier. An external output match offers the flexibility of further optimizing power and efficiency for
any sub-band within the overall bandwidth.
Ordering Information
RFHA1003S2
RFHA1003SB
RFHA1003SQ
RFHA1003SR
RFHA1003TR7
RFHA1003PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
100 Pieces on 7” short reel
750 Pieces on 7” reel
Fully assembled evaluation board 30MHz to 512MHz;
28V operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120216
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 11
RFHA1003
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)
5
mA
Operational Voltage
32
V
27
dBm
RF- Input Power
Ruggedness (VSWR)
12:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TL)
-40 to +85
°C
200
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1C
MTTF (TJ < 200°C, 95% Confidence Limits)*
3 x 106
Hours
9.8
°C/W
Thermal Resistance, RTH (junction to case)
measured at TC = 85°C, DC bias only
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J - C and TC = TCASE
Specification
Min.
Typ.
Max.
Unit
28
32
V
-3
-2
V
RF Input Power (PIN)
25
dBm
Input Source VSWR
10:1
Parameter
Condition
Recommended Operating
Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
-5
Drain Bias Current
55
mA
RF Performance Characteristics
Frequency Range
30
512
MHz
Small signal 3dB bandwidth
Linear Gain
19
dB
POUT = 30dBm, 100MHz
Power Gain
16
dB
P3DB, 100MHz
2
dB
POUT = 30dBm, 30MHz to 2500MHz
-0.02
dB/°C
Gain Flatness
Gain Variation with Temperature
Input Return Loss (S11)
Output Power (P3dB)
Power Added Efficiency (PAE)
2 of 11
-10
dB
39.5
dBm
30MHz to 512MHz
70
%
30MHz to 512MHz
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120216
RFHA1003
Parameter
Specification
Min.
Typ.
Max.
Unit
-3.0
V
RF Functional Tests
[1], [2]
VGS(Q)
Gain
Condition
18
18.5
dB
PIN = 10dBm
14.3
15.5
dB
PIN = 25dBm
Output Power
39
39.5
dBm
Power Added Efficiency (PAE)
60
70
%
Power Gain
Input Return Loss
-10
dB
[1] Test Conditions: VDSQ = 28V, IDQ = 55mA, CW, f = 300MHz, T = 25ºC.
[2] Performance in a standard tuned test fixture.
DS120216
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 11
RFHA1003
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to
512MHz (T = 25°C, unless noted)
GainversusFrequency,PIN =25dBm
SmallSignalsparametersversusFrequency
(CW,VD =28V,IDQ =55mA)
20
16
5
16
12
10
8
15
Frequency(MHz)
8
0
80
5
40
85C
85qC
25C
25qC
40
qC
40C
400
500
30
450
40
400
500
450
400
25
350
0
300
20
250
4
50
350
IRL
300
Gain
60
250
15
200
8
70
150
10
100
12
80
50
5
0
16
90
PowerAddedEfficiency,PAE(%)
0
InputReturnLoss(dB)
20
200
350
(CW,VD =28V,IDQ =55mA)
(CW,VD =28V,IDQ =55mA)
150
300
PAEversusFrequency,POUT =39.5dBm
Gain/IRLversusFrequency,POUT =39.5dBm
100
250
Frequency(MHz)
Frequency(MHz)
50
200
150
50
0
500
450
400
350
300
250
200
150
100
50
0
500
85C
85qC
25C
25qC
40C
40qC
20
25
0
450
15
100
20
10
500
60
450
InputReturnLoss,IRL(dB)
PowerAddedEfficiency,PAE(%)
400
(CW,VD =28V,IDQ =55mA)
100
0
Gain(dB)
350
InputReturnLossversusFrequency,PIN =25dBm
(CW,VD =28V,IDQ =55mA)
4 of 11
300
Frequency(MHz)
PAEversusFrequency,PIN =25dBm
Frequency(MHz)
250
0
200
25
85C
85qC
25C
qC
25
40C
40
qC
150
4
100
20
50
900
800
700
600
500
400
300
200
100
0
0
S21
S11
S22
12
0
4
Gain(dB)
0
Magnitude,S11,S22 (dB)
20
1000
Magnitude,S21 (dB)
(VD =28V,IDQ =55mA)
Frequency(MHz)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120216
RFHA1003
Typical Performance in standard fixed tuned test fixture matched for 30MHz to
512MHz (T = 25°C, unless noted)
GainversusFrequency
PowerAddedEfficiencyversusFrequency
(CW,VD =28V,IDQ =55mA)
(CW,VD =28V,IDQ =55mA)
100
24
20
PowerAddedEfficiency,PAE(%)
80
16
12
8
PPout=39.5dBm
OUT
PPout=35dBm
OUT
PPout=25dBm
OUT
4
60
40
20
Frequency(MHz)
500
450
400
350
300
GainversusOutputPower
(CW,VD =28V,IDQ =55mA)
(CW,VD =28V,IDQ =55mA)
22
0
P
Pout=39.5dBm
OUT
P
Pout=35dBm
OUT
P
Pout=25dBm
OUT
5
20
Gain(dB)
10
15
18
16
500
450
400
350
300
250
200
12
150
25
100
14
50
20
0
InputReturnLoss,IRL(dB)
250
Frequency(MHz)
InputReturnLossversusFrequency
freq=30MHz
freq=300MHz
freq=500MHz
20
25
Frequency(MHz)
30
POUT,OutputPower(dBm)
35
40
InputReturnLossversusOutputPower
PowerAddedEfficiencyversusOutputPower
(CW,VD =28V,IDQ =55mA)
(CW,VD =28V,IDQ =55mA)
0
100
freq=30MHz
freq=300MHz
freq=500MHz
80
freq=30MHz
freq=300MHz
freq=500MHz
5
InputReturnLoss,IRL(dB)
PowerAddedEfficiency,PAE(%)
200
150
0
500
450
400
350
300
250
200
150
100
50
0
100
0
0
50
Gain(dB)
POUT
Pout=39.5dBm
Pout=35dBm
POUT
Pout=25dBm
POUT
60
40
10
15
20
20
25
0
20
DS120216
25
30
POUT,OutputPower(dBm)
35
40
20
25
30
POUT,OutputPower(dBm)
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
35
40
5 of 11
RFHA1003
Typical Performance in Standard Fixed Tuned Test Fixture Matched for 30MHz to
512MHz (T = 25°C, unless noted)
IMDversusOutputPower
GainversusOutputPower
(VD =28V,IDQ =85mA,f1=449.5MHz,f2=450.5MHz)
(2Tone1MHzSeparation,VD =28V,IDQ varied,fc=450MHz)
19
10
IMD3
IMD3
IMD5
IMD5
IMD7
IMD7
18
17
20
16
Gain(dB)
IntermodulationDistortion(IMD dBc)
0
30
40
14
13
25mA
55mA
85mA
115mA
145mA
12
50
11
60
10
9
70
0.1
1
10
POUT,OutputPower(W PEP)
15
100
20
25
30
POUT,OutputPower(dBm)
35
40
DrainEfficiencyversusOutputPower
IMD3versusOutputPower
(2Tone1MHzSeparation,VD=28V,IDQ varied,fc=450MHz)
(2Tone1MHzSeparation,VD =28V,IDQ varied,fc=450MHz)
10
70
50
40
IMD3,IntermodulationDistortion(dBc)
25mA
55mA
85mA
115mA
145mA
60
DrainEfficiency(%)
15
30
20
10
0
15
20
25
25mA
55mA
85mA
115mA
145mA
30
35
40
15
20
25
30
POUT,OutputPower(dBm)
35
40
0.1
1
10
100
POUT,OutputPower(WPEP)
PowerDissipationDeratingCurve
(BasedonMaximumpackagetemperatureandRTH)
25
PowerDissipation(W)
20
15
10
5
0
0
6 of 11
10
20
30
40
50
60
70
MaximumCaseTemperature(°C)
80
90
100
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120216
RFHA1003
Package Drawing
(All dimensions in mm.)
A123 : Trace Code
1234 : Serial Number
Package Style: Ceramic SO8
Pin Names and Descriptions
Pin
1
2
3
4
5
6
7
8
Pkg
Base
DS120216
Name
Description
Gate DC Bias pin
VGS
RF Input
RF IN
RF Input
RF IN
No Connect
N/C
No Connect
N/C
RF OUT/VDS RF Output / Drain DC Bias pin
RF OUT/VDS RF Output / Drain DC Bias pin
No Connect
N/C
Ground
GND
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
7 of 11
RFHA1003
Bias Instruction for RFHA1003 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -5V to VG.
4. Apply 28V to VD.
5. Increase VG until drain current reaches 55mA or desired bias point.
6. Turn on the RF input.
Typical test data provided is measured to SMA connector reference plane, and include evaluation board / broadband bias
network mismatch and losses.
8 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120216
RFHA1003
Evaluation Board Schematic
VG
VD
C15
C25
C11
C21
R21
1
2
C1
3
RF IN
50Ω Microstrip
4
VG
RFIN
GND
9
R11
N/C
RFOUT
RFIN
RFOUT
N/C
N/C
U1
L21
8
7
L20
C2
6
5
C20
50Ω Microstrip
RF OUT
RFHA1003
Evaluation Board Bill of Materials (BOM)
Component
Value
Manufacturer
Part Number
C1, C2
C11
C15
C20
C25
R11
L20
L21
C21, R21
2400pF
10000pF
10F
0.8pF
4.7F
0
5.4nH
0.9H
NOT USED
Dielectric Labs Inc
Murata Electronics
Murata Electronics
ATC
Murata Electronics
Panasonic
Coilcraft
Coilcraft
-
C08BL242X-5UN-X0
GRM188R71H103KA01D
GRM21BF51C106ZE15L
100A0R8BW150XT
GRM55ER72A475KA01L
ERJ-3GEY0R00V
0906-5_LB
1008AF-901XJLC
-
DS120216
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
9 of 11
RFHA1003
Evaluation Board Layout
P1
P2
P3
Device Impedances
Frequency (MHz)
RFHA1003PCBA-410 (30MHz to 512MHz)
Z Source ()
Z Load ()
30
49.84-j1.61
45.86+j11.88
100
50.00-j1.36
49.11+j1.28
150
49.77-j1.68
48.20-j1.43
200
49.58-j2.22
46.77-j3.34
250
49.41-j2.71
44.97-j4.64
300
49.17-j3.06
42.97-j5.24
350
48.77-j3.50
40.74-5.48
400
48.44-j3.95
38.41-j5.24
450
48.07-j4.21
36.28-j4.57
512
47.45-j4.64
33.49-j3.34
NOTE: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency and peak power
performance across the entire frequency bandwidth.
10 of 11
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120216
RFHA1003
Device Handling/Environmental Conditions
RFMD does not recommend operating this device with typical drain voltage applied and the gate pinched off in a high humidity,
high temperature environment.
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or evaluation
boards.
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of the device is
saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken to a potential lower than
the source voltage to pinch off the device prior to applying the drain voltage, taking care not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain current can be
adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current
(IDQ) shown in the RF typical performance table is chosen to best represent the operational characteristics for this device, considering manufacturing variations and expected performance. The user may choose alternate conditions for biasing this device
based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is
measured using IR microscopy capturing the device under test temperature at the hottest spot of the die. At the same time, the
package temperature is measured using a thermocouple touching the backside of the die embedded in the device heat sink
but sized to prevent the measurement system from impacting the results. Knowing the dissipated power at the time of the
measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the thermal resistance from ambient to the back of the package including heat sinking systems and air flow mechanisms. Incorporating the dissipated DC
power, it is possible to calculate the junction temperature of the device
DS120216
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 11
Similar pages