BSS 110 SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -0.8...-2.0 V Pin 1 Pin 2 S Pin 3 G Type VDS ID RDS(on) Package Marking BSS 110 -50 V -0.17 A 10 Ω TO-92 SS 110 Type BSS 110 BSS 110 BSS 110 Ordering Code Q62702-S500 Q62702-S278 Q67000-S568 D Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Symbol Drain source voltage VDS V Drain-gate voltage -50 Unit V DGR RGS = 20 kΩ -50 Gate source voltage VGS Continuous drain current ID TA = 35 °C ± 20 A -0.17 IDpuls DC drain current, pulsed TA = 25 °C -0.68 Ptot Power dissipation TA = 25 °C Semiconductor Group Values W 0.63 1 12/05/1997 BSS 110 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 200 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage -50 - - -0.8 -1.5 -2 VGS(th) VGS=VDS, ID = -1 mA Zero gate voltage drain current V IDSS µA VDS = -50 V, VGS = 0 V, Tj = 25 °C - -0.1 -1 VDS = -50 V, VGS = 0 V, Tj = 125 °C - -2 -60 VDS = -25 V, VGS = 0 V, Tj = 25 °C - - -0.1 Gate-source leakage current IGSS VGS = -20 V, VDS = 0 V Drain-Source on-state resistance - -1 -10 Ω RDS(on) VGS = -10 V, ID = -0.17 A Semiconductor Group nA - 2 5.3 10 12/05/1997 BSS 110 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = -0.17 A Input capacitance 0.05 pF - 30 40 - 17 25 - 8 12 Crss VGS = 0 V, VDS = -25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = -25 V, f = 1 MHz Reverse transfer capacitance 0.09 Ciss VGS = 0 V, VDS = -25 V, f = 1 MHz Output capacitance S td(on) ns VDD = -30 V, VGS = -10 V, ID = -0.27 A RG = 50 Ω Rise time - 7 10 - 12 18 - 10 13 - 20 27 tr VDD = -30 V, VGS = -10 V, ID = -0.27 A RG = 50 Ω Turn-off delay time td(off) VDD = -30 V, VGS = -10 V, ID = -0.27 A RG = 50 Ω Fall time tf VDD = -30 V, VGS = -10 V, ID = -0.27 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BSS 110 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - -0.17 - - -0.68 VSD VGS = 0 V, IF = -0.34 A Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 -0.95 -1.2 12/05/1997 BSS 110 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ -10 V 0.70 -0.18 W A 0.60 Ptot ID 0.55 -0.14 0.50 -0.12 0.45 0.40 -0.10 0.35 -0.08 0.30 0.25 -0.06 0.20 -0.04 0.15 0.10 0.05 0.00 0 -0.02 20 40 60 80 100 120 °C 160 0.00 0 20 40 60 80 100 120 TA °C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25°C -60 V -58 V(BR)DSS-57 -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BSS 110 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs -0.38 Ptot = 1W A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 32 l j k i Ω -0.32 VGS [V] -2.0 ID RDS (on) h a -0.28 -0.24 g -0.20 -0.16 -2.5 c -3.0 d -3.5 e -4.0 f -4.5 g -5.0 h -6.0 f i -7.0 j -8.0 -0.12 e -0.08 b k -9.0 l -10.0 a b c d e f 24 20 16 12 8 g d i c 4 VGS [V] = -0.04 0.00 0.0 a -1.0 -2.0 -3.0 -4.0 a b c d e f -2.5 -2.0 -3.0 -3.5 -4.0 -4.5 -5.0 -6.0 b -5.0 V g h i j -7.0 -8.0 -9.0 -10.0 0 0.00 -0.04 -0.08 -0.12 -0.16 -0.20 -0.24 -0.28 A -0.34 -6.5 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max -0.9 0.16 A ID h j S gfs -0.7 0.12 -0.6 0.10 -0.5 0.08 -0.4 0.06 -0.3 0.04 -0.2 0.02 -0.1 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 VGS Semiconductor Group 6 0.00 0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 A ID -0.8 12/05/1997 BSS 110 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = -0.17 A, VGS = -10 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = -1 mA 24 -4.6 Ω V -4.0 20 RDS (on) VGS(th) 18 -3.6 -3.2 16 -2.8 14 98% 12 -2.4 98% 10 -2.0 8 -1.6 typ typ 6 -1.2 4 -0.8 2 -0.4 2% 0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 Tj °C 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 3 -10 0 pF A IF C 10 2 -10 -1 Ciss Coss 10 1 -10 -2 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 -5 -10 Semiconductor Group -15 -20 -25 -30 V VDS -40 -10 -3 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD 7 12/05/1997