Semiconductor Laser LNC707PS High Power Output Semiconductor Laser ø5.6 +0 –0.025 ø4.3±0.1 ø3.55±0.1 Overview High power output : 60 mW 2.3±0.2 1.27 0.25 Reference slot Kovar glass LD pellet Reference plane ø1.2max. 3-ø0.45 2 Stable single horizontal mode oscillation 1 3 1: LD Anode 2: Common Case 3: PD Cathode ø2.0 Small size package 3 Reference plane 6.5±0.5 Low current operations : 70 mA (with 60 mW output) PD 1 Junction plane 1.0±0.1 1.2±0.1 Features LD 110˚±1˚ 0.4±0.1 ø1.0 min. 0.5 max. The LNC707PS is a near infrared GaAlAs laser diode which provides continuous oscillation in single mode and is stable at low operating current. LNC707PS uses a small package, and is capable of operating continuously at high temperatures with high output (60 mW). It can be used in a wide range of applications as a light source for optical disk memory and optical information devices. In particular, it can be used in making equipment portable due to its low current operations. Unit : mm 2 Bottom view Absolute Maximum Ratings (Ta = 25˚C) Parameter Radiant power Reverse voltage Symbol Ratings Unit PO 60 mW Laser VR 2 V PIN VR (PIN) 30 V Power dissipation Pd (PIN) 100 mW Operating ambient temperature Topr –10 to +60 ˚C Storage temperature Tstg – 40 to +80 ˚C Electro-Optical Characteristics (Ta = 25˚C) Parameter min typ max Unit Ith CW 15 25 35 mA Operating current IOP PO = 60mW 70 100 130 mA Operating voltage VOP PO = 60mW 2.0 2.5 V Threshold current λL PO = 60mW 778 784 790 nm θ//* PO = 60mW 7 10 13 deg. Vertical direction θ ⊥* PO = 60mW 17 21 25 deg. Differential efficiency η PO = 55mW/I(60mW – 5mW) 0.7 0.9 1.2 mW/mA Reverse current (DC) IR VR (PIN) = 5V PIN photo current IP PO = 60mW, VR (PIN) = 5V X direction θX PO = 60mW –2.0 +2.0 deg. Y direction θY PO = 50mW –3.0 +3.0 deg. Optical axis accuracy Oscillation mode * Conditions Horizontal direction Oscillation wavelength Radiation angle Symbol 0.1 0.2 µA mA Single horizontal mode θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle ) 1 Semiconductor Laser LNC707PS PO — IOP I—V 60 Far field pattern 200 100 Ta = 25˚C Relative radiant power ∆PO 80 100 I (mA) 40 30 0 Current Radiant power PO (mW) 50 20 –100 10 0 0 40 80 –200 –4 120 –2 0 Ith — Ta 10 3 10 30 50 PO = 60mW 30 50 70 Ambient temperature Ta (˚C ) PO — Ta Id — Ta VR (PIN) = 30V 10 Id (nA) 60 PIN dark current Radiant power PO (mW) 80 40 10 30 50 70 Ambient temperature Ta (˚C ) 2 1 10 –1 10 –2 20 10 –3 – 10 10 30 50 Ambient temperature Ta (˚C ) 300 200 100 0 –10 10 30 50 Ambient temperature Ta (˚C ) 10 2 100 40 VR (PIN) = 5V PO = 60mW PIN photo current 10 20 IP — Ta IP (µA) 10 – 10 70 0 400 10 2 Ambient temperature Ta (˚C ) 0 – 10 20 Angle θ (deg.) IOP (mA) Operating current Ith (mA) 10 1 – 10 20 IOP — Ta 10 2 θ⊥ 40 0 40 4 θ// Voltage V (V) Operating current IOP (mA) Threshold current 2 60 70 70