Panasonic LNC707PS High power output semiconductor laser Datasheet

Semiconductor Laser
LNC707PS
High Power Output Semiconductor Laser
ø5.6 +0
–0.025
ø4.3±0.1
ø3.55±0.1
Overview
High power output : 60 mW
2.3±0.2
1.27
0.25
Reference slot
Kovar glass
LD pellet
Reference plane
ø1.2max.
3-ø0.45
2
Stable single horizontal mode oscillation
1
3
1: LD Anode
2: Common Case
3: PD Cathode
ø2.0
Small size package
3
Reference plane
6.5±0.5
Low current operations : 70 mA (with 60 mW output)
PD
1
Junction plane
1.0±0.1
1.2±0.1
Features
LD
110˚±1˚
0.4±0.1
ø1.0 min.
0.5
max.
The LNC707PS is a near infrared GaAlAs laser diode which
provides continuous oscillation in single mode and is stable at low
operating current. LNC707PS uses a small package, and is capable
of operating continuously at high temperatures with high output (60
mW). It can be used in a wide range of applications as a light source
for optical disk memory and optical information devices. In
particular, it can be used in making equipment portable due to its
low current operations.
Unit : mm
2
Bottom view
Absolute Maximum Ratings (Ta = 25˚C)
Parameter
Radiant power
Reverse voltage
Symbol
Ratings
Unit
PO
60
mW
Laser
VR
2
V
PIN
VR (PIN)
30
V
Power dissipation
Pd (PIN)
100
mW
Operating ambient temperature
Topr
–10 to +60
˚C
Storage temperature
Tstg
– 40 to +80
˚C
Electro-Optical Characteristics (Ta = 25˚C)
Parameter
min
typ
max
Unit
Ith
CW
15
25
35
mA
Operating current
IOP
PO = 60mW
70
100
130
mA
Operating voltage
VOP
PO = 60mW
2.0
2.5
V
Threshold current
λL
PO = 60mW
778
784
790
nm
θ//*
PO = 60mW
7
10
13
deg.
Vertical direction
θ ⊥*
PO = 60mW
17
21
25
deg.
Differential efficiency
η
PO = 55mW/I(60mW – 5mW)
0.7
0.9
1.2
mW/mA
Reverse current (DC)
IR
VR (PIN) = 5V
PIN photo current
IP
PO = 60mW, VR (PIN) = 5V
X direction
θX
PO = 60mW
–2.0
+2.0
deg.
Y direction
θY
PO = 50mW
–3.0
+3.0
deg.
Optical axis
accuracy
Oscillation mode
*
Conditions
Horizontal direction
Oscillation wavelength
Radiation angle
Symbol
0.1
0.2
µA
mA
Single horizontal mode
θ// and θ⊥ are the angles where the optical intencity is a half of its max. value.( half full angle )
1
Semiconductor Laser
LNC707PS
PO — IOP
I—V
60
Far field pattern
200
100
Ta = 25˚C
Relative radiant power ∆PO
80
100
I (mA)
40
30
0
Current
Radiant power
PO (mW)
50
20
–100
10
0
0
40
80
–200
–4
120
–2
0
Ith — Ta
10 3
10
30
50
PO = 60mW
30
50
70
Ambient temperature Ta (˚C )
PO — Ta
Id — Ta
VR (PIN) = 30V
10
Id (nA)
60
PIN dark current
Radiant power
PO (mW)
80
40
10
30
50
70
Ambient temperature Ta (˚C )
2
1
10 –1
10 –2
20
10 –3
– 10
10
30
50
Ambient temperature Ta (˚C )
300
200
100
0
–10
10
30
50
Ambient temperature Ta (˚C )
10 2
100
40
VR (PIN) = 5V
PO = 60mW
PIN photo current
10
20
IP — Ta
IP (µA)
10
– 10
70
0
400
10 2
Ambient temperature Ta (˚C )
0
– 10
20
Angle θ (deg.)
IOP (mA)
Operating current
Ith (mA)
10
1
– 10
20
IOP — Ta
10 2
θ⊥
40
0
40
4
θ//
Voltage V (V)
Operating current IOP (mA)
Threshold current
2
60
70
70
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