HL8325G GaAlAs Laser Diode Description The HL8325G is a high-power 0.8 µm band GaAlAs laser diode with a TQW (triple quantum well) structure. Its internal circuit configuration is suited for operation on a single positive supply voltage. It is suitable as a light source for optical disk memories, card readers and various other types of optical equipment. Features • • • • Infrared light output: λp = 820 to 840 nm High power: standard continuous operation at 40 mW (CW), pulsed operation at 50 mW Built-in monitor photodiode Single longitudinal mode 190 HL8325G Absolute Maximum Ratings (TC = 25°C) Item Symbol Rated Value Units Optical output power PO 40 mW 1 Pulse optical output power PO (pulse) 50* LD reverse voltage VR (LD) 2 V PD reverse voltage VR (PD) 30 V Operating temperature Topr –10 to +60 °C Storage temperature Tstg –40 to +85 °C Note: mW 1. Maximum 50% duty cycle, maximum 1 µs pulse width Optical and Electrical Characteristics (TC = 25 ± 3 °C) Item Symbol Min Typ Max Unit Test Conditions Optical output power PO 40 — — mW Kink free Threshold current Ith — 40 70 mA Slope efficiency η 0.4 0.5 0.9 mW/mA 24 mW/ I (32 mW) – I (8 mW) Lasing wavelength λp 820 830 840 nm PO = 40 mW Beam divergence (parallel) θ// 7 10 14 deg. PO = 40 mW, FWHM Beam divergence (perpendicular) θ⊥ 18 22 32 deg. PO = 40 mW, FWHM Monitor current Is 20 40 130 µA VR (PD) = 5 V, PO = 4 mW Astigmatism AS — 5 — µm PO = 4 mW, NA = 0.4 191 HL8325G Typical Characteristic Curves 192 HL8325G Typical Characteristic Curves (cont) 193