LRC LESHAN RADIO COMPANY,LTD. Medium Power Transistor (32V, 0.8A) L2SD1781K*LT1 FFeatures 1) Very low VCE(sat). VCE(sat) t 0.4 V (Typ.) (IC / IB = 500mA / 50mA) 2) High current capacity in compact package. 3) Complements the L2SB1197K*LT1 4) Pb Free Package is Available. L2SD1781K*LT1 3 1 2 SOT-23 /TO-236AB FStructure Epitaxial planar type NPN silicon transistor COLLECTOR 3 FAbsolute maximum ratings (Ta = 25_C) 1 BASE 2 EMITTER ORDERING INFORMATION Device L2SD1781KQLT1 Marking AFQ L2SD1781KQLT1G AFQ(Pb-Free) L2SD1781KRLT1 AFR L2SD1781KRLT1G AFR(Pb-Free) Shipping 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel 3000 Tape & Reel L2SD1781K*LT1-1/4 LRC LESHAN RADIO COMPANY,LTD. L2SD1781K*LT1 FElectrical characteristics (Ta = 25_C) DEVICE MARKING L2SD1781KQLT1=AFQ L2S1781KRLT1=AFR ltem Q R hFE 120~270 180~390 Electrical characteristic curves L2SD1781K*LT1-2/4 LRC LESHAN RADIO COMPANY,LTD. L2SD1781K*LT1 L2SD1781K*LT1-3/4 LRC LESHAN RADIO COMPANY,LTD. L2SD1781K*LT1 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI L Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 1 V 2 B S DIM G A B C D G H J K L S V C D H K J INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. BASE 2. EMITTER 3. COLLECTOR 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm L2SD1781K*LT1-4/4