DONGGUAN NANJING ELECTRONICS LTD., SOT-23 Plastic-Encapsulate Diodes BAT54/A/C/S SOT-23 SCHOTTKY BARRIER DIODE FEATURES Extremely Fast Switching Speed z MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Symbol Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM Value Unit 30 V DC Blocking Voltage VR Forward Continuous Current IFM 200 mA Non-repetitive Peak Forward Surge Current @ t＜1s IFSM 600 mA Repetitive Peak Forward Current @ t≤1s,δ≤0.5 IFRM 300 mA Power Dissipation PD 200 mW RΘJA 500 ℃/W Junction Temperature Tj 125 ℃ Storage Temperature Tstg -55~+150 ℃ Thermal Resistance from Junction to Ambient ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified) Parameter Reverse voltage Forward voltage Symbol Min V(BR) 30 VF Typ Max Unit Test conditions V IR=100μA 0.24 V IF1=0.1mA 0.32 V IF2=1mA 0.40 V IF3=10mA 0.50 V IF4=30mA 1 V IF5=100mA Reverse current IR 2 μA VR=25V Diode capacitance CD 10 pF VR=1V,f=1MHz Reverse recovery time trr 5 ns IF=IR=10mA Irr=0.1×IR,RL=100Ω C,Mar,2014 Typical Characteristics Forward (uA) o C o C REVERSE CURRENT IR =1 00 a T 1 0.1 0 200 400 600 FORWARD VOLTAGE VF 12 8 4 15 REVERSE VOLTAGE 20 VR 0.1 0 5 25 (V) 10 15 (mW) 250 PD 200 30 20 VR 25 30 125 150 (V) Power Derating Curve 300 f=1MHz 10 o Ta=25 C REVERSE VOLTAGE 16 5 1 (mV) Ta=25℃ 0 Ta=100 C 10 0.01 1000 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) 800 Capacitance Characteristics 20 0 Characteristics o 10 0.01 Reverse 100 T= a 2 5 FORWARD CURRENT Characteristics 100 IF (mA) 1000 BAT54/A/C/S 150 100 50 0 0 25 50 75 100 AMBIENT TEMPERATURE Ta (℃) C,Mar,2014