ADPOW APTM120UM70F-ALN Single switch mosfet power module Datasheet

APTM120UM70F-AlN
Single switch
MOSFET Power Module
SK
S
D
DK
G
S
D
SK
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
Features
• Power MOS 7® FREDFETs
- Low RDSon
- Low input and Miller capacitance
- Low gate charge
- Fast intrinsic reverse diode
- Avalanche energy rated
- Very rugged
• Kelvin source for easy drive
• Very low stray inductance
- Symmetrical design
- M5 power connectors
• High level of integration
• AlN substrate for improved thermal performance
Benefits
• Outstanding performance at high frequency operation
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Low profile
Absolute maximum ratings
Symbol
VDSS
ID
IDM
VGS
RDSon
PD
IAR
EAR
EAS
Parameter
Drain - Source Breakdown Voltage
Tc = 25°C
Tc = 80°C
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Tc = 25°C
Max ratings
1200
171
126
684
±30
70
5000
24
50
3200
Unit
V
A
V
mΩ
W
A
July, 2004
G
mJ
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website – http://www.advancedpower.com
1–6
APTM120UM70F–AlN Rev 0
DK
VDSS = 1200V
RDSon = 70mΩ max @ Tj = 25°C
ID = 171A @ Tc = 25°C
APTM120UM70F-AlN
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
RDS(on)
VGS(th)
IGSS
Zero Gate Voltage Drain Current
Drain – Source on Resistance
Gate Threshold Voltage
Gate – Source Leakage Current
Dynamic Characteristics
Symbol
Ciss
Coss
Crss
Qg
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total gate Charge
Qgs
Gate – Source Charge
Qgd
Gate – Drain Charge
Td(on)
Turn-on Delay Time
Tr
Td(off)
Test Conditions
VGS = 0V, ID = 1.5mA
Min
1200
VGS = 0V,VDS = 1200V
T j = 25°C
VGS = 0V,VDS = 1000V
T j = 125°C
VGS = 10V, ID = 85.5A
VGS = VDS, ID = 30mA
VGS = ±30 V, VDS = 0V
Test Conditions
VGS = 0V
VDS = 25V
f = 1MHz
Turn-off Delay Time
Tf
Fall Time
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Eon
Turn-on Switching Energy X
Eoff
Turn-off Switching Energy Y
Min
VGS = 10V
VBus = 600V
ID = 171A
VSD
dv/dt
Characteristic
Continuous Source current
(Body diode)
Diode Forward Voltage
Peak Diode Recovery Z
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
Typ
43.5
6.6
1.2
1650
Unit
V
1.5
6
70
5
±600
mΩ
V
nA
Max
Unit
mA
nF
nC
1074
20
17
62
7.6
Inductive switching @ 125°C
VGS = 15V, VBus = 800V
ID = 171A, R G = 0.8Ω
13.8
Test Conditions
ns
245
Inductive switching @ 25°C
VGS = 15V, VBus = 800V
ID = 171A, R G = 0.8Ω
mJ
6.9
mJ
8.5
Min
Typ
Tj = 25°C
Max
171
126
1.3
18
375
Tj = 125°C
860
Tc = 25°C
Tc = 80°C
VGS = 0V, IS = - 171A
IS = - 171A
VR = 600V
diS/dt = 600A/µs
IS = - 171A
VR = 600V
diS/dt = 600A/µs
Max
192
Source - Drain diode ratings and characteristics
Symbol
IS
3
Inductive switching @ 125°C
VGS = 15V
VBus = 800V
ID = 171A
R G =0.8Ω
Rise Time
Typ
Tj = 25°C
12
Tj = 125°C
54
Unit
A
V
V/ns
ns
July, 2004
IDSS
Characteristic
Drain - Source Breakdown Voltage
µC
X Eon includes diode reverse recovery.
Y In accordance with JEDEC standard JESD24-1.
Z dv/dt numbers reflect the limitations of the circuit rather than the device itself.
IS ≤ - 171A di/dt ≤ 700A/µs
VR ≤ VDSS
Tj ≤ 150°C
APT website – http://www.advancedpower.com
2–6
APTM120UM70F–AlN Rev 0
Symbol
BVDSS
APTM120UM70F-AlN
Thermal and package characteristics
Symbol
RthJC
VISOL
TJ
TSTG
TC
Characteristic
Junction to Case
Torque
Mounting torque
Wt
Package Weight
Min
Transistor
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
To heatsink
For terminals
M6
M5
2500
-40
-40
-40
3
2
Typ
Max
0.025
150
125
100
5
3.5
280
Unit
°C/W
V
°C
N.m
g
APT website – http://www.advancedpower.com
3–6
APTM120UM70F–AlN Rev 0
July, 2004
Package outline
APTM120UM70F-AlN
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Thermal Impedance (°C/W)
0.03
0.025
0.9
0.02
0.7
0.015
0.5
0.01
0.3
0.005
0.1
0.05
Single Pulse
0
0.00001
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
Low Voltage Output Characteristics
Transfert Characteristics
480
VGS =15, 10V
360
300
6V
240
5.5V
180
120
VDS > ID(on)xRDS (on)MAX
250µs pulse test @ < 0.5 duty cycle
420
7V
ID, Drain Current (A)
5V
60
360
300
240
TJ =-55°C
180
TJ=25°C
120
60
4.5V
0
0
5
10
15
20
25
TJ =125°C
0
30
0
ID, DC Drain Current (A)
VGS=10V
1.1
VGS=20V
1
4
5
6
7
0.9
0.8
135
90
45
0
0
60
120
180
240
ID, Drain Current (A)
300
360
25
50
75
100
125
150
July, 2004
RDS(on) Drain to Source ON Resistance
1.2
3
180
Normalized to
VGS =10V @ 85.5A
1.3
2
DC Drain Current vs Case Temperature
RDS(on) vs Drain Current
1.4
1
VGS, Gate to Source Voltage (V)
VDS, Drain to Source Voltage (V)
TC, Case Temperature (°C)
APT website – http://www.advancedpower.com
4–6
APTM120UM70F–AlN Rev 0
I D, Drain Current (A)
420
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25 50 75 100 125 150
ON resistance vs Temperature
2.5
VGS =10V
ID=85.5A
2.0
1.5
1.0
0.5
0.0
-50 -25
Threshold Voltage vs Temperature
50
75 100 125 150
Maximum Safe Operating Area
100µs
limited by RDS on
1.1
I D, Drain Current (A)
VGS(TH), Threshold Voltage
(Normalized)
25
1000
1.2
1.0
0.9
0.8
0.7
100
1ms
10ms
10
Single pulse
TJ =150°C
1
0.6
-50 -25 0 25 50 75 100 125 150
TC, Case Temperature (°C)
1
Capacitance vs Drain to Source Voltage
Ciss
10000
Coss
Crss
1000
10
20
30
40
50
VDS, Drain to Source Voltage (V)
14
ID=171A
TJ=25°C
12
10
VDS=240V
VDS=600V
8
VDS=960V
6
4
2
0
0
420
840
1260
1680
2100
Gate Charge (nC)
July, 2004
0
1200
10
100
1000
VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage
VGS, Gate to Source Voltage (V)
100000
C, Capacitance (pF)
0
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
APT website – http://www.advancedpower.com
5–6
APTM120UM70F–AlN Rev 0
BVDSS, Drain to Source Breakdown
Voltage (Normalized)
Breakdown Voltage vs Temperature
1.15
RDS(on), Drain to Source ON resistance
(Normalized)
APTM120UM70F-AlN
APTM120UM70F-AlN
Delay Times vs Current
Rise and Fall times vs Current
100
t d(off)
250
200
VDS=800V
RG=0.8Ω
T J=125°C
L=100µH
150
100
50
VDS=800V
RG=0.8Ω
T J=125°C
L=100µH
80
tr and tf (ns)
td(on) and td(off) (ns)
300
60
40
tr
20
td(on)
0
0
60
90
120 150 180 210 240 270
60
90
ID, Drain Current (A)
36
V DS =800V
RG =0.8Ω
T J=125°C
L=100µH
20
16
Switching Energy (mJ)
Switching Energy (mJ)
120 150 180 210 240 270
ID, Drain Current (A)
Switching Energy vs Gate Resistance
Switching Energy vs Current
24
Eon
Eoff
12
8
4
0
V DS=800V
ID=171A
T J=125°C
L=100µH
30
24
Eoff
18
Eon
12
6
60
90
120 150 180 210 240 270
ID, Drain Current (A)
0
1
2
3
4
5
6
Gate Resistance (Ohms)
Operating Frequency vs Drain Current
Source to Drain Diode Forward Voltage
1000
150
IDR, Reverse Drain Current (A)
175
Frequency (kHz)
tf
ZVS
125
Hard
switching
100
ZCS
VDS=800V
D=50%
RG=0.8Ω
T J=125°C
T C=75°C
75
50
25
0
60
80
100 120 140
ID, Drain Current (A)
160
TJ=25°C
10
1
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
6–6
APTM120UM70F–AlN Rev 0
July, 2004
40
TJ=150°C
100
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