IRF IRSM505-044 Integrated bootstrap functionality Datasheet

IRSM505-044
IRSM515-044 Series
1.0Ω, 250V
Integrated Power Module for
Small Appliance Motor Drive Applications
Description
IRSM505-044 and IRSM515-044 are 3-phase Integrated Power Modules (IPM) designed for advanced appliance
motor drive applications such as energy efficient fans and pumps. These advanced IPMs offers a combination of
low RDS(on) Trench FREDFET technology and the industry benchmark half-bridge high voltage, rugged driver in a
familiar package. The modules are optimized for low EMI characteristics.
IRSM505-044 includes temperature feedback while IRSM515-044 does not.
Features

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

250V 3-phase inverter including high voltage gate drivers
Integrated bootstrap functionality
Low 1.0Ω (max, 25°C) RDS(on) Trench FREDFET
Under-voltage lockout for all channels
Matched propagation delay for all channels
Temperature feedback via NTC (IRSM505-044 only)
Optimized dV/dt for loss and EMI trade offs
Open-source for single and leg-shunt current sensing
3.3V logic compatible
Driver tolerant to negative transient voltage (-Vs)
Advanced input filter
Rugged design for PM fan and pump motors
Isolation 1900VRMS, 1min
Standard Pack
Base Part Number
IRSM505-044
IRSM515-044
1
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NTC
Yes
No
Package Type
Orderable Part Number
Form
Quantity
SOP23
Tube
240
IRSM505-044PA
DIP23
Tube
240
IRSM505-044DA
DIP23A
Tube
240
IRSM505-044DA2
SOP23
Tube
240
IRSM515-044PA
DIP23
Tube
240
IRSM515-044DA
DIP23A
Tube
240
IRSM515-044DA2
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IRSM505-044
IRSM515-044 Series
Internal Electrical Schematic
1 COM
17 V+
1 COM
2 VB1
2 VB1
3 VCC1
3 VCC1
4 HIN1
18 U/V S1
Half-Bridge
HVIC
5 LIN1
6 NC
19 V R1
Integrated in HVIC
7 VB2
20 V R2
8 VCC2
9 HIN2
Half-Bridge
HVIC
10 LIN 2
21 V/VS 2
4 HIN1
5 LIN1
6 NC
18 U/V S1
Half-Bridge
HVIC
19 V R1
Integrated in HVIC
7 VB2
20 V R2
8 VCC2
9 HIN2
10 LIN 2
11 VTH
17 V+
Half-Bridge
HVIC
21 V/VS 2
11 NC
12 VB 3
12 VB 3
22 V R3
13 VCC3
14 HIN3
Half-Bridge
HVIC
15 LIN 3
23 W/V S3
16 NC
22 V R3
13 VCC3
14 HIN3
15 LIN 3
Half-Bridge
HVIC
23 W/V S3
16 NC
IRSM505-044
IRSM515-044
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the module may occur. These are not tested at
manufacturing. All voltage parameters are absolute voltages referenced to COM unless otherwise stated in the table.
Symbol
Description
Min
Max
Unit
BVDSS
MOSFET Blocking Voltage
---
250
V
IO @ TC=25°C
DC Output Current per MOSFET
---
3.0
IOP @ TC =25°C
Pulsed Output Current per MOSFET (Note 1)
---
15
Pd @ TC=25°C
Maximum Power Dissipation per MOSFET
---
16
W
VISO
Isolation Voltage (1min)
---
1900
VRMS
TJ
Operating Junction Temperature
-40
150
°C
TC
Operating Case Temperature
-40
150
°C
TS
Storage Temperature
-40
150
°C
VS1,2,3
High Side Floating Supply Offset Voltage
VB1,2,3 - 20
VB1,2,3 +0.3
V
VB1,2,3
High Side Floating Supply Voltage
-0.3
275
V
VCC
Low Side and Logic Supply voltage
VIN
Input Voltage of LIN, HIN
A
-0.3
25
V
COM -0.3
VCC+0.3
V
Note 1: Pulse Width = 100µs, Single Pulse
2
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IRSM505-044
IRSM515-044 Series
Recommended Operating Conditions
Symbol
Description
V+
Positive DC Bus Input Voltage
VS1,2,3
High Side Floating Supply Offset Voltage
VB1,2,3
High Side Floating Supply Voltage
VCC
Low Side and Logic Supply Voltage
VIN
Input Voltage of LIN, HIN, ITRIP, EN, FLT
Min
Max
Unit
---
200
V
(Note 2)
200
V
VS+12
VS+20
V
13.5
16.5
V
0
5
V
Fp
PWM Carrier Frequency
--20
Note 2: Logic operational for Vs from COM-8V to COM+250V. Logic state held for Vs from COM-8V to COM-VBS.
kHz
Static Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified. The VIN and IIN parameters are referenced to COM and
are applicable to all six channels. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.
Symbol
Description
Min
Typ
Max
Units
Conditions
BVDSS
Drain-to-Source Breakdown Voltage
250
---
---
V
TJ=25°C, ILK=250µA
ILKH
Leakage Current of High Side FET
0.5
µA
TJ=25°C, VDS=250V
ILKL
Leakage Current of Low Side FET Plus
Gate Drive IC
1
µA
TJ=25°C, VDS=250V
---
0.8
1.0
Ω
TJ=25°C, VCC=15V, Id=1.0A
---
1.8
---
Ω
TJ=150°C, VCC=15V, Id=1.0A
(Note 3)
TJ=25°C, VCC=15V, ID=1.0A
RDS(on)
Drain to Source ON Resistance
VSD
Mosfet Body Diode Forward Voltage
---
0.8
---
V
VIN,th+
Positive Going Input Threshold
2.2
---
---
V
VIN,th-
Negative Going Input Threshold
---
---
0.8
V
VCCUV+,
VBSUV+
VCC and VBS Supply Under-Voltage,
Positive Going Threshold
8
8.9
9.8
V
VCCUV-,
VBSUV-
VCC and VBS supply Under-Voltage,
Negative Going Threshold
6.9
7.7
8.5
V
VCCUVH,
VBSUVH
VCC and VBS Supply Under-Voltage
Lock-Out Hysteresis
---
1.2
---
V
IQBS
Quiescent VBS Supply Current VIN=0V
---
42
60
µA
IQBS, ON
Quiescent VBS Supply Current VIN=4V
---
42
60
µA
IQCC
Quiescent VCC Supply Current VIN=0V
---
1.7
4
mA
IQCC, ON
Quiescent VCC Supply Current VIN=4V
---
1.8
4
mA
IIN+
Input Bias Current VIN=4V
---
5.9
18
µA
VIN=3.3V
IIN-
Input Bias Current VIN=0V
---
---
2
µA
VIN=0V
RBR
Internal Bootstrap Equivalent Resistor
Value
---
250
---
Ω
TJ=25°C
Note 3: Characterized, not tested at manufacturing
3
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IRSM505-044
IRSM515-044 Series
Dynamic Electrical Characteristics
(VCC-COM) = (VB-VS) = 15 V. TC = 25oC unless otherwise specified.
Symbol
Description
Min
Typ
Max
Units
TON
Input to Output Propagation Turn-On
Delay Time
---
0.7
1.5
µs
TOFF
Input to Output Propagation Turn-Off
Delay Time
---
0.8
1.5
µs
TFIL,IN
Input Filter Time (HIN, LIN)
200
300
---
ns
DT
Deadtime Inserted
---
400
---
ns
EON
Turn-on switching energy loss
---
11
---
µJ
EOFF
Turn-off switching energy loss
---
3
---
µJ
EREC
Recovery energy loss
---
3
---
µJ
EON,150
Turn-on switching energy loss
---
15
---
µJ
EOFF,150
Turn-off switching energy loss
---
4
---
µJ
---
5
---
µJ
Conditions
ID=120mA, V+=30V
See Fig.1
EREC,150
Recovery energy loss
Note 4: Characterized, not tested at manufacturing
VIN=0 & VIN=3.3V
VIN=0 & VIN=3.3V without
external deadtime
V+=150V, ID=0.5A, L=40mH,
TC=25°C (Note 4)
V+=150V, ID=0.5A, L=40mH,
TC=150°C (Note 4)
Thermal and Mechanical Characteristics
Symbol
Description
Rth(J-C)
Junction to Case Thermal Resistance
Min
Typ
Max
Units
Conditions
---
7.9
---
°C/W
High Side V-Phase Mosfet
(Note 5)
Note 5: Characterized, not tested at manufacturing. Case temperature (TC) point shown in Figure 2.
Internal NTC – Thermistor Characteristics (IRSM505-044 Only)
Symbol
Description
Min
Typ
Max
Units
R25
Resistance
---
47
---
kΩ
TC=25°C, ±5% tolerance
R125
Resistance
---
1.41
---
kΩ
TC=125°C
B
B-constant (25-50°C)
---
4050
---
K
±2% tolerance (Note 6)
-40
---
125
°C
Temperature Range
Note 6: See application notes for usage
4
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Conditions
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IRSM505-044
IRSM515-044 Series
Qualification Information†
Qualification Level
Industrial
Moisture Sensitivity Level
MSL3
RoHS Compliant
Yes
††
†††
Machine Model
Class B
Human Body Model
Class 2
ESD
†
Qualification standards can be found at International Rectifier’s web site http://www.irf.com/
††
Higher qualification ratings may be available should the user have such requirements. Please contact
your International Rectifier sales representative for further information.
†††
SOP23 package only. Higher MSL ratings may be available for the specific package types listed here.
Please contact your International Rectifier sales representative for further information.
5
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IRSM505-044
IRSM515-044 Series
Module Pin-Out Description
Pin
1
Name
COM
2
VB1
High Side Floating Supply Voltage 1
3
VCC1
15V Supply 1
4
HIN1
Logic Input for High Side Gate Driver - Phase 1
5
LIN1
Logic Input for Low Side Gate Driver - Phase 1
6
NC
Not Connected
7
VB2
High Side Floating Supply Voltage 2
8
VCC2
15V Supply 2
9
HIN2
Logic Input for High Side Gate Driver - Phase 2
10
Description
Logic Ground
LIN2
Logic Input for Low Side Gate Driver - Phase 2
VTH
Thermistor Output (IRSM505-044DA)
NC
Not Connected (IRSM515-044DA)
12
VB3
High Side Floating Supply Voltage 3
13
VCC3
15V Supply 3
14
HIN3
Logic Input for High Side Gate Driver - Phase 3
15
LIN3
Logic Input for Low Side Gate Driver - Phase 3
16
NC
Not Connected
17
V+
DC Bus Voltage Positive
18
U/VS1
Output - Phase 1, High Side Floating Supply Offset 1
19
VR1
Phase 1 Low Side Source
20
VR2
Phase 2 Low Side Source
21
V/VS2
Output - Phase 2, High Side Floating Supply Offset 2
22
VR3
Phase 3 Low Side Source
23
W/VS3
Output - Phase 3, High Side Floating Supply Offset 2
11
16
15
14
13
12
11
10
9
8
7
6
0
4
3
2
1
A 0123-412W
IRSM505-044PA
23
22
21
20
19
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18
17
6
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IRSM505-044
IRSM515-044 Series
Referenced Figures
Figure 1a: Input to Output propagation turn-on
delay time.
Figure 1b: Input to Output propagation turn-off
delay time.
Figure 1c: Diode Reverse Recovery.
Figure 1: Switching Parameter Definitions
Figure 2: TC measurement point for Rth(j-C)
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IRSM505-044
IRSM515-044 Series
Application Notes
A basic application schematic is shown below.
VB2
VB1
VB3
IRSM505-044
V B US
2M
V CC
X TA L0
X TA L1
S P D-RE F
A IN2
HIN1
P WMV H
HIN2
P WMWH
HIN3
P WMUL
LIN1
P WMV L
LIN2
P WMWL
+
GA TE K ILL
-
A IN1
V DD
V DDCA P
U, VS1
V, VS2
W, VS3
LIN3
IRMCF171
Power
Supply
HVICs
P WMUH
7.50k
3V
IFB +
V TH
IFB -
COM
6.04k
IFB O
VSS
1nF
7.68k
4.87k
0.25
Figure 3: Basic sensor-less motor drive circuit connection. Motor is connected to U, V, W
A complete reference design board for running any permanent magnet motor via sensorless sinusoidal control is
available. The board – photo below – features the µIPM™-DIP module and the iMotion™ digital control IC.
Reference design kits are available on the International Rectifier website (irf.com > Design Resources >
Reference Designs > Intelligent Power Modules)
Figure 4: Reference design board featuring the µIPM™-DIP module and the iMotion™ IRMCF171 digital control IC
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IRSM505-044
IRSM515-044 Series
Figures 5-6 show the typical current capability for this module at specified conditions. In all tests, the application
board – the IRMCS1071-1-D reference board – was placed in a box to prevent cooling from ambient airflow. The
figures represent current capability for the module as used without any heat sink. ∆TJA represents the difference in
temperature between the junction of the high-side V-phase Mosfet and the ambient, measured 10cm above and
6cm away from the board. Ambient temperature kept within 28-29°C.
1000
900
RMS Phase Current (mA)
800
700
600
500
3-Phase Modulation
400
2-Phase modulation
300
200
100
0
6
8
10
12
14
Carrier Frequency (kHz)
16
18
20
Figure 5: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink.
Space Vector Modulation, V+=150V, TA=28°C, TJ=128°C
900
800
RMS Phase Current (mA)
700
600
500
3-Phase Modulation
400
2-Phase Modulation
300
200
100
0
6
8
10
12
14
Carrier Frequency (kHz)
16
18
20
Figure 6: Maximum sinusoidal phase current vs PWM switching frequency, no heat sink.
Space Vector Modulation, V+=150V, TA=28°C, TJ=98°C
9
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IRSM505-044
IRSM515-044 Series
The module contains an NTC – connected between COM and the VTH pin – which can be used to monitor the
temperature of the module. The NTC is effectively a resistor whose value decreases as the temperature rises.
The NTC resistance can be calculated at any temperature as follows:
, where
is 47kΩ and
is 4050K
An external resistor network is connected to the NTC, the simplest of which is one resistor pulled up to VCC as
shown in Figure 3. The VTH vs NTC temperature, TTH curve for this configuration is shown in Figure 7 below. The
min, typical and max curves result from the NTC having a ±5% tolerance on its resistance and ±2% tolerance on
the B-parameter.
Figure 8 shows the thermistor temperature, TTH plotted against the high-side V-phase junction temperature, TJ for
a module without a heat sink. It is thus advisable to shut down the module when TTH reaches 125°C.
14.0
min
12.0
typical
max
10.0
VTH (V)
8.0
6.0
4.0
2.0
0.0
0
10
20
30
40
50
60
70
80
90
100
110
120
130
140
TTH (°C)
Figure 7: VTH vs TTH with VTH pin pulled up to VCC with a 7.50kΩ (1%, 100ppm) resistor.
A 15V, 1% variation in VCC is assumed.
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IRSM505-044
IRSM515-044 Series
140
120
TTH (°C
100
80
60
40
20
0
0
10
20
30
40
50
60
70
80
90
100 110 120 130 140 150 160
TJ (°C)
Figure 8: TTH vs TJ for a module without a heat sink. VCC=15.3V, R=7.50kΩ
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IRSM505-044
IRSM515-044 Series
SOP23 Package Outline
Dimensions in mm
12
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IRSM505-044
IRSM515-044 Series
DIP23A Package Outline
Dimensions in mm
13
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IRSM505-044
IRSM515-044 Series
DIP23 Package Outline
Dimensions in mm
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IRSM505-044
IRSM515-044 Series
Top Marking
A 0123-412P
IRSM505-044PA
Marking Code
Date Code
P = Pb Free; Y = Engineering Samples
YWW format, where Y = least significant digit of the production year , WW = two digits representing
the week of the production year
Revision History
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
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