NTE283 Silicon NPN Transistor Horizontal Output, Switch Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include switching regulators, PWM inverters, solenoid and relay drivers. Absolute Maximum Ratings: Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V Collector–Emitter Voltage (VBE = 0), VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 800V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Peak (tp ≤ 10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A Total Power Dissipation (TC ≤ +25°C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100W Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.75°C/W Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current ICES VCEV = 800V, VBE = 0 – – 1 mA Emitter Cutoff Current IEBO VEB = 8V, IC = 0 – – 1 mA Collector–Base Voltage VCBO IC = 1mA, IE = 0 800 – – V IC = 100mA, IB = 0, Note 1 325 – – V Collector–Emitter Sustaining Voltage VCEO(su Collector–Emitter Saturation Voltage VCE(sat) IC = 8A, IB = 2.5A, Note 1 – – 3.3 V Base–Emitter Saturation Voltage VBE(sat) IC = 8A, IB = 2.5A, Note 1 – – 2.2 V VCE = 10V, IC = 2.5A, Note 1 15 – – VCE = 10V, IC = 500mA – 10 – MHz VCE = 25V, Note 2 4 – – A s) DC Current Gain Current Gain–Bandwidth Product Second Breakdown Collector Current hFE fT IS/b Note 1. Pulse test: Pulse Width = 300µs, Duty Cycle = 1.5%. Note 2. Pulsed: 1sec, non–repetitive pulse. Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Turn–On Time ton VCC = 250V, IC = 5A, IB1 = 1A – 0.2 – µs Storage Time ts – 1.7 – µs Fall Time tf VCC = 250V, IC = 5A, IB1 = –IB2 = 1A – 0.3 – µs Fall Time tf VCC = 40V, IC = 8A, IB1 = –IB2 = 2.5A – – 1.0 µs .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min Emitter .040 (1.02) 1.187 (30.16) .665 (16.9) .215 (5.45) .156 (3.96) Dia (2 Holes) .430 (10.92) .188 (4.8) R Max Base .525 (13.35) R Max Collector/Case