MCNIX MX25L12835FZNI-10G 3v, 128m-bit [x 1/x 2/x 4] cmos mxsmioâ® (serial multi i/o) flash memory Datasheet

MX25L12835F
MX25L12835F
3V, 128M-BIT [x 1/x 2/x 4]
CMOS MXSMIO® (SERIAL MULTI I/O)
FLASH MEMORY
P/N: PM1795
MX25L12835F
Contents
1. FEATURES............................................................................................................................................................... 4
2. GENERAL DESCRIPTION...................................................................................................................................... 6
Table 1. Read performance Comparison.....................................................................................................6
3. PIN CONFIGURATIONS .......................................................................................................................................... 7
4. PIN DESCRIPTION................................................................................................................................................... 7
5. BLOCK DIAGRAM.................................................................................................................................................... 8
6. DATA PROTECTION................................................................................................................................................. 9
Table 2. Protected Area Sizes....................................................................................................................10
Table 3. 4K-bit Secured OTP Definition..................................................................................................... 11
7. Memory Organization............................................................................................................................................ 12
Table 4. Memory Organization...................................................................................................................12
8. DEVICE OPERATION............................................................................................................................................. 13
8-1. Quad Peripheral Interface (QPI) Read Mode........................................................................................... 15
9. COMMAND DESCRIPTION.................................................................................................................................... 16
9-1.
9-2.
9-3.
9-4.
9-5.
9-6.
9-7.
9-8.
9-9.
9-10.
9-11.
9-12.
9-13.
9-14.
9-15.
9-16.
9-17.
9-18.
9-19.
9-20.
9-21.
9-22.
9-23.
9-24.
9-25.
P/N: PM1795
Table 5. Command Set...............................................................................................................................16
Write Enable (WREN)............................................................................................................................... 20
Write Disable (WRDI)................................................................................................................................ 21
Read Identification (RDID)........................................................................................................................ 22
Release from Deep Power-down (RDP), Read Electronic Signature (RES)............................................ 23
Read Electronic Manufacturer ID & Device ID (REMS)............................................................................ 25
QPI ID Read (QPIID)................................................................................................................................ 26
Table 6. ID Definitions ...............................................................................................................................26
Read Status Register (RDSR).................................................................................................................. 27
Read Configuration Register (RDCR)....................................................................................................... 28
Table 7. Configuration Register Table........................................................................................................32
Write Status Register (WRSR).................................................................................................................. 34
Table 8. Protection Modes..........................................................................................................................35
Read Data Bytes (READ)......................................................................................................................... 38
Read Data Bytes at Higher Speed (FAST_READ)................................................................................... 39
Dual Output Read Mode (DREAD)........................................................................................................... 40
2 x I/O Read Mode (2READ).................................................................................................................... 41
Quad Read Mode (QREAD)..................................................................................................................... 42
4 x I/O Read Mode (4READ).................................................................................................................... 43
Burst Read................................................................................................................................................ 45
Performance Enhance Mode.................................................................................................................... 46
Fast Boot.................................................................................................................................................. 49
Sector Erase (SE)..................................................................................................................................... 52
Block Erase (BE32K)................................................................................................................................ 53
Block Erase (BE)...................................................................................................................................... 54
Chip Erase (CE)........................................................................................................................................ 55
Page Program (PP).................................................................................................................................. 56
4 x I/O Page Program (4PP)..................................................................................................................... 58
Deep Power-down (DP)............................................................................................................................ 59
2
Rev. 1.6, July 22, 2016
MX25L12835F
9-26.
9-27.
9-28.
9-29.
Enter Secured OTP (ENSO)..................................................................................................................... 60
Exit Secured OTP (EXSO)........................................................................................................................ 60
Read Security Register (RDSCUR).......................................................................................................... 60
Write Security Register (WRSCUR).......................................................................................................... 60
Table 9. Security Register Definition..........................................................................................................61
9-30. Write Protection Selection (WPSEL)......................................................................................................... 62
9-31. Advanced Sector Protection..................................................................................................................... 64
9-32. Password Protection Mode....................................................................................................................... 71
9-33. Program/Erase Suspend/Resume............................................................................................................ 73
9-34. Erase Suspend......................................................................................................................................... 73
9-35. Program Suspend..................................................................................................................................... 73
9-36. Write-Resume........................................................................................................................................... 75
9-37. No Operation (NOP)................................................................................................................................. 75
9-38. Software Reset (Reset-Enable (RSTEN) and Reset (RST)).................................................................... 75
9-39. Read SFDP Mode (RDSFDP)................................................................................................................... 77
Table 10. Signature and Parameter Identification Data Values .................................................................78
Table 11. Parameter Table (0): JEDEC Flash Parameter Tables...............................................................79
Table 12. Parameter Table (1): Macronix Flash Parameter Tables............................................................81
10. RESET.................................................................................................................................................................. 83
Table 13. Reset Timing-(Power On)...........................................................................................................83
Table 14. Reset Timing-(Other Operation).................................................................................................83
11. POWER-ON STATE.............................................................................................................................................. 84
12. ELECTRICAL SPECIFICATIONS......................................................................................................................... 85
Table 15. ABSOLUTE MAXIMUM RATINGS.............................................................................................85
Table 16. CAPACITANCE TA = 25°C, f = 1.0 MHz.....................................................................................85
Table 17. DC CHARACTERISTICS ..........................................................................................................87
Table 18. AC CHARACTERISTICS ..........................................................................................................88
13. OPERATING CONDITIONS.................................................................................................................................. 90
Table 19. Power-Up/Down Voltage and Timing..........................................................................................92
13-1. INITIAL DELIVERY STATE....................................................................................................................... 92
14. ERASE AND PROGRAMMING PERFORMANCE............................................................................................... 93
15. DATA RETENTION............................................................................................................................................... 93
16. LATCH-UP CHARACTERISTICS......................................................................................................................... 93
17. ORDERING INFORMATION................................................................................................................................. 94
18. PART NAME DESCRIPTION................................................................................................................................ 95
19. PACKAGE INFORMATION................................................................................................................................... 96
19-1. 8-pin SOP (200mil)................................................................................................................................... 96
19-2. 16-pin SOP (300mil)................................................................................................................................. 97
19-3. 8-land WSON (6x5mm)............................................................................................................................ 98
19-4. 8-land WSON (8x6mm)............................................................................................................................ 99
20. REVISION HISTORY .......................................................................................................................................... 100
P/N: PM1795
3
Rev. 1.6, July 22, 2016
MX25L12835F
3V 128M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O)
FLASH MEMORY
1. FEATURES
GENERAL
• Supports Serial Peripheral Interface -- Mode 0 and Mode 3
• Single Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
• 128Mb: 134,217,728 x 1 bit structure or 67,108,864 x 2 bits (two I/O mode) structure or 33,554,432 x 4 bits (four
I/O mode) structure
• Protocol Support
- Single I/O, Dual I/O and Quad I/O
• Latch-up protected to 100mA from -1V to Vcc +1V
• Fast read for SPI mode
- Support clock frequency up to 133MHz for all protocols
- Support Fast Read, 2READ, DREAD, 4READ, QREAD instructions.
- Configurable dummy cycle number for fast read operation
• Quad Peripheral Interface (QPI) available
• Equal Sectors with 4K byte each, or Equal Blocks with 32K byte each or Equal Blocks with 64K byte each
- Any Block can be erased individually
• Programming :
- 256byte page buffer
- Quad Input/Output page program(4PP) to enhance program performance
• Typical 100,000 erase/program cycles
• 20 years data retention
SOFTWARE FEATURES
• Input Data Format
- 1-byte Command code
• Advanced Security Features
- Block lock protection
The BP0-BP3 and T/B status bit defines the size of the area to be protection against program and erase instructions
- Advanced sector protection function (Solid and Password Protect)
• Additional 4K bit security OTP
- Features unique identifier
- factory locked identifiable, and customer lockable
• Command Reset
• Program/Erase Suspend and Resume operation
• Electronic Identification
- JEDEC 1-byte manufacturer ID and 2-byte device ID
- RES command for 1-byte Device ID
- REMS command for 1-byte manufacturer ID and 1-byte device ID
• Support Serial Flash Discoverable Parameters (SFDP) mode
HARDWARE FEATURES
• SCLK Input
- Serial clock input
• SI/SIO0
- Serial Data Input or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
P/N: PM1795
4
Rev. 1.6, July 22, 2016
MX25L12835F
•
SO/SIO1
- Serial Data Output or Serial Data Input/Output for 2 x I/O read mode and 4 x I/O read mode
• WP#/SIO2
- Hardware write protection or serial data Input/Output for 4 x I/O read mode
• RESET#/SIO3
- Hardware Reset pin or Serial input & Output for 4 x I/O read mode
• PACKAGE
-8-pin SOP (200mil)
-16-pin SOP (300mil)
-8-land WSON (6x5mm)
-8-land WSON (8x6mm)
- All devices are RoHS Compliant and Halogen-free
P/N: PM1795
5
Rev. 1.6, July 22, 2016
MX25L12835F
2. GENERAL DESCRIPTION
MX25L12835F is 128Mb bits serial Flash memory, which is configured as 16,777,216 x 8 internally. When it is in
two or four I/O mode, the structure becomes 67,108,864 bits x 2 or 33,554,432 bits x 4. MX25L12835F feature a
serial peripheral interface and software protocol allowing operation on a simple 3-wire bus while it is in single I/O
mode. The three bus signals are a clock input (SCLK), a serial data input (SI), and a serial data output (SO). Serial
access to the device is enabled by CS# input.
When it is in two I/O read mode, the SI pin and SO pin become SIO0 pin and SIO1 pin for address/dummy bits input and data output. When it is in four I/O read mode, the SI pin, SO pin, WP# and RESET# pin become SIO0 pin,
SIO1 pin, SIO2 pin and SIO3 pin for address/dummy bits input and data output.
The MX25L12835F MXSMIO (Serial Multi I/O) provides sequential read operation on whole chip.
After program/erase command is issued, auto program/erase algorithms which program/erase and verify the specified page or sector/block locations will be executed. Program command is executed on byte basis, or page (256
bytes) basis, or word basis for erase command is executed on sector (4K-byte), block (32K-byte), or block (64K-byte),
or whole chip basis.
To provide user with ease of interface, a status register is included to indicate the status of the chip. The status read
command can be issued to detect completion status of a program or erase operation via WIP bit.
Advanced security features enhance the protection and security functions, please see security features section for
more details.
When the device is not in operation and CS# is high, it is put in standby mode.
The MX25L12835F utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
Table 1. Read performance Comparison
Numbers of
Dummy Cycles
Fast Read
(MHz)
Dual Output
Fast Read
(MHz)
Quad Output
Fast Read
(MHz)
Dual IO
Fast Read
(MHz)
Quad IO
Fast Read
(MHz)
4
-
-
-
84*
70
6
104
104
84
104
84*
8
104*
104*
104*
104
104
10
133
133
133
133
133
Note: * mean default status
P/N: PM1795
6
Rev. 1.6, July 22, 2016
MX25L12835F
3. PIN CONFIGURATIONS
4. PIN DESCRIPTION
8-PIN SOP (200mil)
CS#
SO/SIO1
WP#/SIO2
GND
1
2
3
4
8
7
6
5
SYMBOL
CS#
DESCRIPTION
Chip Select
Serial Data Input (for 1 x I/O)/ Serial
SI/SIO0
Data Input & Output (for 2xI/O or 4xI/O
read mode)
Serial Data Output (for 1 x I/O)/ Serial
SO/SIO1
Data Input & Output (for 2xI/O or 4xI/O
read mode)
SCLK
Clock Input
Write protection Active low or Serial
WP#/SIO2 Data Input & Output (for 4xI/O read
mode)
Hardware Reset Pin Active low or
RESET#/SIO3 Serial Data Input & Output (for 4xI/O
read mode)
VCC
+ 3V Power Supply
GND
Ground
NC
No Connection
DNU
Do not use
VCC
RESET#/SIO3
SCLK
SI/SIO0
16-PIN SOP (300mil)
DNU/SIO3
VCC
RESET#
NC
NC
NC
CS#
SO/SIO1
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
SCLK
SI/SIO0
NC
NC
NC
NC
GND
WP#/SIO2
8-WSON (6x5mm, 8x6mm)
CS#
SO/SIO1
WP#/SIO2
GND
P/N: PM1795
1
2
3
4
8
7
6
5
Notes:
1. RESET# pin has internal pull up.
2. When using 1I/O or 2I/O (QE bit not enable), the
DNU/SIO3 pin of 16SOP can not connect to GND.
Recommend to connect this pin to VCC or floating.
VCC
RESET#/SIO3
SCLK
SI/SIO0
7
Rev. 1.6, July 22, 2016
MX25L12835F
5. BLOCK DIAGRAM
X-Decoder
Address
Generator
SI/SIO0
SO/SIO1
SIO2 *
SIO3 *
Y-Decoder
Data
Register
WP# *
HOLD# *
RESET# *
CS#
SCLK
Memory Array
Sense
Amplifier
SRAM
Buffer
Mode
Logic
State
Machine
HV
Generator
Clock Generator
Output
Buffer
* Depends on part number options.
P/N: PM1795
8
Rev. 1.6, July 22, 2016
MX25L12835F
6. DATA PROTECTION
During power transition, there may be some false system level signals which result in inadvertent erasure or
programming. The device is designed to protect itself from these accidental write cycles.
The state machine will be reset as standby mode automatically during power up. In addition, the control register
architecture of the device constrains that the memory contents can only be changed after specific command
sequences have completed successfully.
In the following, there are several features to protect the system from the accidental write cycles during VCC powerup and power-down or from system noise.
•
Valid command length checking: The command length will be checked whether it is at byte base and completed
on byte boundary.
•
Write Enable (WREN) command: WREN command is required to set the Write Enable Latch bit (WEL) before
other command to change data.
•
Deep Power Down Mode: By entering deep power down mode, the flash device also is under protected from
writing all commands except Release from deep power down mode command (RDP) and Read Electronic Signature command (RES), and softreset command.
•
Advanced Security Features: there are some protection and security features which protect content from inadvertent write and hostile access.
P/N: PM1795
9
Rev. 1.6, July 22, 2016
MX25L12835F
I. Block lock protection
- The Software Protected Mode (SPM) use (BP3, BP2, BP1, BP0 and T/B) bits to allow part of memory to be
protected as read only. The protected area definition is shown as Table 2. Protected Area Sizes, the protected
areas are more flexible which may protect various area by setting value of BP0-BP3 bits.
- The Hardware Proteced Mode (HPM) use WP#/SIO2 to protect the (BP3, BP2, BP1, BP0) bits and Status Register Write Protect bit.
- In four I/O and QPI mode, the feature of HPM will be disabled.
Table 2. Protected Area Sizes
Protected Area Sizes (T/B bit = 0)
Status bit
BP3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
BP2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
BP1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
BP0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Protect Level
128Mb
0 (none)
1 (1 block, protected block 255th)
2 (2 blocks, block 254th-255th)
3 (4 blocks, block 252nd-255th)
4 (8 blocks, block 248th-255th)
5 (16 blocks, block 240th-255th)
6 (32 blocks, block 224th-255th)
7 (64 blocks, block 192nd-255th)
8 (128 blocks, block 128th-255th)
9 (256 blocks, protected all)
10 (256 blocks, protected all)
11 (256 blocks, protected all)
12 (256 blocks, protected all)
13 (256 blocks, protected all)
14 (256 blocks, protected all)
15 (256 blocks, protected all)
Protected Area Sizes (T/B bit = 1)
Status bit
BP3
0
0
0
0
0
0
0
0
1
1
1
1
1
1
1
1
P/N: PM1795
BP2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
BP1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
BP0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Protect Level
128Mb
0 (none)
1 (1 block, protected block 0th)
2 (2 blocks, protected block 0th~1st)
3 (4 blocks, protected block 0th~3rd)
4 (8 blocks, protected block 0th~7th)
5 (16 blocks, protected block 0th~15th)
6 (32 blocks, protected block 0th~31st)
7 (64 blocks, protected block 0th~63rd)
8 (128 blocks, protected block 0th~127th)
9 (256 blocks, protected all)
10 (256 blocks, protected all)
11 (256 blocks, protected all)
12 (256 blocks, protected all)
13 (256 blocks, protected all)
14 (256 blocks, protected all)
15 (256 blocks, protected all)
10
Rev. 1.6, July 22, 2016
MX25L12835F
II. Additional 4K-bit secured OTP for unique identifier: to provide 4K-bit one-time program area for setting device unique serial number - Which may be set by factory or system customer.
- Security register bit 0 indicates whether the chip is locked by factory or not.
- To program the 4K-bit secured OTP by entering 4K-bit secured OTP mode (with Enter Security OTP command),
and going through normal program procedure, and then exiting 4K-bit secured OTP mode by writing Exit Security
OTP command.
- Customer may lock-down the customer lockable secured OTP by writing WRSCUR(write security register) command to set customer lock-down bit1 as "1". Please refer to Table 9. Security Register Definition for security register bit definition and Table 3. 4K-bit Secured OTP Definition for address range definition.
- Note: Once lock-down whatever by factory or customer, it cannot be changed any more. While in 4K-bit secured
OTP mode, array access is not allowed.
Table 3. 4K-bit Secured OTP Definition
Address range
Size
Standard Factory Lock
xxx000~xxx00F
128-bit
ESN (electrical serial number)
xxx010~xxx1FF
3968-bit
N/A
P/N: PM1795
11
Customer Lock
Determined by customer
Rev. 1.6, July 22, 2016
MX25L12835F
7. Memory Organization
Table 4. Memory Organization
Block(64K-byte) Block(32K-byte)
Sector
254
508
individual block
lock/unlock unit:64K-byte
507
253
506
FF8FFFh
4087
FF7000h
FF7FFFh
…
individual 16 sectors
lock/unlock unit:4K-byte
4080
FF0000h
FF0FFFh
4079
FEF000h
FEFFFFh
…
509
FF8000h
4072
FE8000h
FE8FFFh
4071
FE7000h
FE7FFFh
…
510
4088
4064
FE0000h
FE0FFFh
4063
FDF000h
FDFFFFh
…
255
FFFFFFh
4056
FD8000h
FD8FFFh
4055
FD7000h
FD7FFFh
4048
FD0000h
FD0FFFh
47
02F000h
02FFFFh
…
511
Address Range
FFF000h
…
4095
1
2
1
0
0
027FFFh
…
028FFFh
027000h
32
020000h
020FFFh
31
01F000h
01FFFFh
…
3
028000h
39
24
018000h
018FFFh
23
017000h
017FFFh
…
4
individual block
lock/unlock unit:64K-byte
40
16
010000h
010FFFh
15
00F000h
00FFFFh
8
008000h
008FFFh
7
007000h
007FFFh
000000h
000FFFh
…
2
0
P/N: PM1795
individual 16 sectors
lock/unlock unit:4K-byte
…
5
…
individual block
lock/unlock unit:64K-byte
12
Rev. 1.6, July 22, 2016
MX25L12835F
8. DEVICE OPERATION
1. Before a command is issued, status register should be checked to ensure device is ready for the intended operation.
2. When incorrect command is inputted to this device, this device becomes standby mode and keeps the standby
mode until next CS# falling edge. In standby mode, SO pin of this device should be High-Z.
3. When correct command is inputted to this device, this device becomes active mode and keeps the active mode
until next CS# rising edge.
4. Input data is latched on the rising edge of Serial Clock (SCLK) and data shifts out on the falling edge of SCLK.
The difference of Serial mode 0 and mode 3 is shown as Figure 1. Serial Modes Supported.
5. For the following instructions: RDID, RDSR, RDSCUR, READ, FAST_READ, 2READ, DREAD, 4READ, QREAD,
RDSFDP, RES, REMS, QPIID, RDDPB, RDSPB, RDPASS, RDLR, RDFBR, RDSPBLK, RDCR the shifted-in
instruction sequence is followed by a data-out sequence. After any bit of data being shifted out, the CS# can be
high. For the following instructions: WREN, WRDI, WRSR, SE, BE32K, BE, CE, PP, 4PP, DP, ENSO, EXSO,
WRSCUR, WPSEL, GBLK, GBULK, SPBLK, SUSPEND, RESUME, NOP, RSTEN, RST, EQIO, RSTQIO the
CS# must go high exactly at the byte boundary; otherwise, the instruction will be rejected and not executed.
6. While a Write Status Register, Program, or Erase operation is in progress, access to the memory array is neglected and will not affect the current operation of Write Status Register, Program, Erase.
Figure 1. Serial Modes Supported
CPOL
CPHA
shift in
(Serial mode 0)
0
0
SCLK
(Serial mode 3)
1
1
SCLK
SI
shift out
MSB
SO
MSB
Note:
CPOL indicates clock polarity of Serial master, CPOL=1 for SCLK high while idle, CPOL=0 for SCLK low while not
transmitting. CPHA indicates clock phase. The combination of CPOL bit and CPHA bit decides which Serial mode is
supported.
P/N: PM1795
13
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 2. Serial Input Timing
tSHSL
CS#
tCHSL
tSLCH
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
tCLCH
LSB
MSB
SI
High-Z
SO
Figure 3. Output Timing
CS#
tCH
SCLK
tCLQV
tCLQX
tCL
tCLQV
tCLQX
LSB
SO
SI
P/N: PM1795
tSHQZ
ADDR.LSB IN
14
Rev. 1.6, July 22, 2016
MX25L12835F
8-1. Quad Peripheral Interface (QPI) Read Mode
QPI protocol enables user to take full advantage of Quad I/O Serial Flash by providing the Quad I/O interface in
command cycles, address cycles and as well as data output cycles.
Enable QPI mode
By issuing EQIO command (35h), the QPI mode is enable. After QPI mode has been enabled, the device enter quad
mode (4-4-4) without QE bit status changed.
Figure 4. Enable QPI Sequence
CS#
MODE 3
SCLK
0
1
2
3
4
5
6
7
MODE 0
SIO0
35h
SIO[3:1]
Reset QPI (RSTQIO)
To reset the QPI mode, the RSTQIO (F5h) command is required. After the RSTQIO command is issued, the device
returns from QPI mode (4 I/O interface in command cycles) to SPI mode (1 I/O interface in command cycles).
Note:
For EQIO and RSTQIO commands, CS# high width has to follow "write spec" tSHSL (as defined in Table 18. AC
CHARACTERISTICS) for next instruction.
Figure 5. Reset QPI Mode
CS#
SCLK
SIO[3:0]
P/N: PM1795
F5h
15
Rev. 1.6, July 22, 2016
MX25L12835F
9. COMMAND DESCRIPTION
Table 5. Command Set
Read/Write Array Commands
Command
(byte)
READ
(normal read)
FAST READ
(fast read data)
Mode
1st byte
SPI
3
03 (hex)
SPI
3
0B (hex)
2nd byte
ADD1
3rd byte
4th byte
Address Bytes
2READ
DREAD
(1I 2O read)
4READ
(4 I/O read)
QREAD
(1I 4O read)
SPI
3
BB (hex)
SPI
3
3B (hex)
SPI/QPI
3
EB (hex)
SPI
3
6B (hex)
ADD1
ADD1
ADD1
ADD1
ADD1
ADD2
ADD2
ADD2
ADD2
ADD2
ADD2
ADD3
ADD3
ADD3
ADD3
ADD3
ADD3
Dummy*
Dummy*
Dummy*
Dummy*
Dummy*
n bytes read out
until CS# goes
high
n bytes read out
by 2 x I/O until
CS# goes high
n bytes read out
by Dual output
until CS# goes
high
n bytes read out
by 4 x I/O until
CS# goes high
n bytes read out
by Quad output
until CS# goes
high
BE
(block erase
64KB)
SPI/QPI
5th byte
(2 x I/O read
command)
Data Cycles
Action
n bytes read out
until CS# goes
high
Command
(byte)
PP
(page program)
Mode
SPI/QPI
4PP
(quad page
program)
SPI
SPI/QPI
BE 32K
(block erase
32KB)
SPI/QPI
Address Bytes
3
3
3
3
3
0
1st byte
02 (hex)
38 (hex)
20 (hex)
52 (hex)
D8 (hex)
60 or C7 (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
3rd byte
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
1-256
quad input to
program the
selected page
to erase the
selected sector
to erase the
selected 32K
block
to erase the
selected block
SE
(sector erase)
CE
(chip erase)
SPI/QPI
5th byte
Data Cycles
Action
1-256
to program the
selected page
to erase whole
chip
* Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in configuration register.
P/N: PM1795
16
Rev. 1.6, July 22, 2016
MX25L12835F
Register/Setting Commands
Mode
SPI/QPI
SPI/QPI
SPI/QPI
RDCR
(read
configuration
register)
SPI/QPI
1st byte
06 (hex)
04 (hex)
05 (hex)
15 (hex)
Command
(byte)
WREN
WRDI
(write enable) (write disable)
RDSR
(read status
register)
WRSR
(write status/
configuration
register)
SPI/QPI
01 (hex)
2nd byte
Values
3rd byte
Values
WPSEL
(Write Protect
Selection)
EQIO
(Enable QPI)
SPI/QPI
SPI
68 (hex)
35 (hex)
4th byte
5th byte
Data Cycles
Action
sets the (WEL)
resets the
to read out the to read out the
write enable
(WEL) write
values of the values of the
latch bit
enable latch bit status register configuration
register
Command
(byte)
RSTQIO
(Reset QPI)
Mode
1st byte
QPI
F5 (hex)
PGM/ERS
Suspend
(Suspends
Program/
Erase)
SPI/QPI
B0 (hex)
PGM/ERS
Resume
(Resumes
Program/
Erase)
SPI/QPI
30 (hex)
1-2
to write new
to enter and
values of the enable individal
block protect
status/
mode
configuration
register
Entering the
QPI mode
DP (Deep
power down)
RDP (Release
from deep
power down)
SBL
(Set Burst
Length)
RDFBR
(read fast boot
register)
SPI/QPI
B9 (hex)
SPI/QPI
AB (hex)
SPI/QPI
C0 (hex)
SPI
16(hex)
enters deep
power down
mode
release from
deep power
down mode
to set Burst
length
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
Command
(byte)
Mode
1st byte
1-4
Exiting the QPI
mode
WRFBR
ESFBR
(write fast boot (erase fast
register)
boot register)
SPI
SPI
17(hex)
18(hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
4
Action
P/N: PM1795
17
Rev. 1.6, July 22, 2016
MX25L12835F
ID/Security Commands
1st byte
REMS
RDID
RES
(read electronic
(read identific- (read electronic
manufacturer &
ation)
ID)
device ID)
SPI
SPI/QPI
SPI
0
0
0
9F (hex)
AB (hex)
90 (hex)
2nd byte
x
3rd byte
x
x
ADD2
4th byte
x
ADD1(Note 2)
ADD3
Command
(byte)
Mode
Address Bytes
QPIID
(QPI ID
Read)
RDSFDP
ENSO
(enter secured
OTP)
EXSO
(exit secured
OTP)
QPI
0
AF (hex)
SPI/QPI
3
5A (hex)
SPI/QPI
0
B1 (hex)
SPI/QPI
0
C1 (hex)
x
ADD1
5th byte
Action
outputs JEDEC to read out
output the
ID: 1-byte
1-byte Device Manufacturer
Manufacturer
ID
ID & Device ID
ID & 2-byte
Device ID
Address Bytes
SPI/QPI
0
WRSCUR
(write
security
register)
SPI/QPI
0
1st byte
2B (hex)
2F (hex)
Command
(byte)
Mode
RDSCUR
(read security
register)
ID in QPI
interface
Dummy(8)(Note 4)
Read SFDP
to enter the
to exit the
mode
4K-bit secured 4K-bit secured
OTP mode
OTP mode
SPI
0
WRPASS
(write
password
register)
SPI
0
RDPASS
(read
password
register)
SPI
0
2C (hex)
2D (hex)
28 (hex)
27 (hex)
2
2
1-8
1-8
GBLK
(gang block
lock)
GBULK
(gang block
unlock)
WRLR
(write Lock
register)
RDLR
(read Lock
register)
SPI/QPI
0
SPI/QPI
0
SPI
0
7E (hex)
98 (hex)
2nd byte
3rd byte
4th byte
5th byte
Data Cycles
Action
whole chip
to read value to set the
of security lock-down bit write protect
register
as "1" (once
lock-down,
cannot be
updated)
whole chip
unprotect
Address Bytes
PASSULK
(password
unlock)
SPI
0
WRSPB
(SPB bit
program)
SPI
4
ESSPB
(all SPB bit
erase)
SPI
0
RDSPB
(read SPB
status)
SPI
4
SPBLK
(SPB lock
set)
SPI
0
1st byte
29 (hex)
E3 (hex)
E4 (hex)
E2 (hex)
A6 (hex)
Command
(byte)
Mode
RDSPBLK
WRDPB
(SPB lock
(write DPB
register read) register)
SPI
SPI
0
4
A7 (hex)
RDDPB
(read DPB
register)
SPI
4
E1 (hex)
E0 (hex)
2nd byte
ADD1
ADD1
ADD1
ADD1
3rd byte
ADD2
ADD2
ADD2
ADD2
4th byte
ADD3
ADD3
ADD3
ADD3
5th byte
ADD4
ADD4
ADD4
ADD4
1
1
Data Cycles
8
1
2
Action
P/N: PM1795
18
Rev. 1.6, July 22, 2016
MX25L12835F
Reset Commands
Mode
SPI/QPI
SPI/QPI
RST
(Reset
Memory)
SPI/QPI
1st byte
00 (hex)
66 (hex)
99 (hex)
Command
(byte)
NOP
RSTEN
(No Operation) (Reset Enable)
2nd byte
3rd byte
4th byte
5th byte
Action
(Note 3)
Note 1: It is not recommended to adopt any other code not in the command definition table, which will potentially enter the hidden mode.
Note 2: ADD=00H will output the manufacturer ID first and ADD=01H will output device ID first.
Note 3: Before executing RST command, RSTEN command must be executed. If there is any other command to interfere, the
reset operation will be disabled.
Note 4: The number in parentheses after "ADD" or "Data" stands for how many clock cycles it has. For example, "Data(8)"
represents there are 8 clock cycles for the data in.
P/N: PM1795
19
Rev. 1.6, July 22, 2016
MX25L12835F
9-1. Write Enable (WREN)
The Write Enable (WREN) instruction is for setting Write Enable Latch (WEL) bit. For those instructions like PP, 4PP,
SE, BE32K, BE, CE, and WRSR, which are intended to change the device content WEL bit should be set every time
after the WREN instruction setting the WEL bit.
The sequence of issuing WREN instruction is: CS# goes low→sending WREN instruction code→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
Figure 6. Write Enable (WREN) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
06h
High-Z
SO
Figure 7. Write Enable (WREN) Sequence (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
06h
SIO[3:0]
P/N: PM1795
20
Rev. 1.6, July 22, 2016
MX25L12835F
9-2. Write Disable (WRDI)
The Write Disable (WRDI) instruction is to reset Write Enable Latch (WEL) bit.
The sequence of issuing WRDI instruction is: CS# goes low→sending WRDI instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care in
SPI mode.
The WEL bit is reset by following situations:
- Power-up
- Reset# pin driven low
- WRDI command completion
- WRSR command completion
- PP command completion
- 4PP command completion
- SE command completion
- BE32K command completion
- BE command completion
- CE command completion
- PGM/ERS Suspend command completion
- Softreset command completion
- WRSCUR command completion
- WPSEL command completion
- GBLK command completion
- GBULK command completion
- WRLR command completion
- WRPASS command completion
- PASSULK command completion
- SPBLK command completion
- WRSPB command completion
- ESSPB command completion
- WRDPB command completion
- WRFBR command completion
- ESFBR command completion
Figure 8. Write Disable (WRDI) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
SO
P/N: PM1795
04h
High-Z
21
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 9. Write Disable (WRDI) Sequence (QPI Mode)
CS#
0
Mode 3
1
SCLK
Mode 0
Command
04h
SIO[3:0]
9-3. Read Identification (RDID)
The RDID instruction is for reading the manufacturer ID of 1-byte and followed by Device ID of 2-byte. The Macronix Manufacturer ID and Device ID are listed as Table 6. ID Definitions.
The sequence of issuing RDID instruction is: CS# goes low→ sending RDID instruction code→24-bits ID data out
on SO→ to end RDID operation can drive CS# to high at any time during data out.
While Program/Erase operation is in progress, it will not decode the RDID instruction, therefore there's no effect on
the cycle of program/erase operation which is currently in progress. When CS# goes high, the device is at standby
stage.
Figure 10. Read Identification (RDID) Sequence (SPI mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
13 14 15 16 17 18
28 29 30 31
SCLK
Mode 0
Command
SI
9Fh
Manufacturer Identification
SO
High-Z
7
6
5
2
MSB
P/N: PM1795
1
Device Identification
0 15 14 13
3
2
1
0
MSB
22
Rev. 1.6, July 22, 2016
MX25L12835F
9-4. Release from Deep Power-down (RDP), Read Electronic Signature (RES)
The Release from Deep Power-down (RDP) instruction is completed by driving Chip Select (CS#) High. When Chip
Select (CS#) is driven High, the device is put in the Stand-by Power mode. If the device was not previously in the
Deep Power-down mode, the transition to the Stand-by Power mode is immediate. If the device was previously in
the Deep Power-down mode, though, the transition to the Stand-by Power mode is delayed by tRES2, and Chip
Select (CS#) must remain High for at least tRES2(max), as specified in Table 18. AC CHARACTERISTICS. Once in
the Stand-by Power mode, the device waits to be selected, so that it can receive, decode and execute instructions.
The RDP instruction is only for releasing from Deep Power Down Mode. Reset# pin goes low will release the Flash
from deep power down mode.
RES instruction is for reading out the old style of 8-bit Electronic Signature, whose values are shown as Table 6. ID
Definitions. This is not the same as RDID instruction. It is not recommended to use for new design. For new design,
please use RDID instruction.
Even in Deep power-down mode, the RDP and RES are also allowed to be executed, only except the device is in
progress of program/erase/write cycle; there's no effect on the current program/erase/write cycle in progress.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The RES instruction is ended by CS# goes high after the ID been read out at least once. The ID outputs repeatedly if continuously send the additional clock cycles on SCLK while CS# is at low. If the device was not previously
in Deep Power-down mode, the device transition to standby mode is immediate. If the device was previously in
Deep Power-down mode, there's a delay of tRES2 to transit to standby mode, and CS# must remain to high at least
tRES2(max). Once in the standby mode, the device waits to be selected, so it can be receive, decode, and execute
instruction.
Figure 11. Read Electronic Signature (RES) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38
SCLK
Mode 0
Command
SI
ABh
tRES2
3 Dummy Bytes
23 22 21
3
2
1
0
MSB
SO
Electronic Signature Out
High-Z
7
6
5
4
3
2
1
0
MSB
Deep Power-down Mode
P/N: PM1795
23
Stand-by Mode
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 12. Read Electronic Signature (RES) Sequence (QPI Mode)
CS#
MODE 3
0
1
2
3
4
5
6
7
SCLK
MODE 0
3 Dummy Bytes
Command
SIO[3:0]
X
ABh
X
X
X
X
X
H0
L0
MSB LSB
Data In
Data Out
Stand-by Mode
Deep Power-down Mode
Figure 13. Release from Deep Power-down (RDP) Sequence (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tRES1
7
SCLK
Mode 0
Command
SI
ABh
High-Z
SO
Deep Power-down Mode
Stand-by Mode
Figure 14. Release from Deep Power-down (RDP) Sequence (QPI Mode)
CS#
Mode 3
tRES1
0
1
SCLK
Mode 0
Command
SIO[3:0]
ABh
Deep Power-down Mode
P/N: PM1795
24
Stand-by Mode
Rev. 1.6, July 22, 2016
MX25L12835F
9-5. Read Electronic Manufacturer ID & Device ID (REMS)
The REMS instruction returns both the JEDEC assigned manufacturer ID and the device ID. The Device ID values
are listed in Table 6. ID Definitions.
The REMS instruction is initiated by driving the CS# pin low and sending the instruction code "90h" followed by two
dummy bytes and one address byte (A7~A0). After which the manufacturer ID for Macronix (C2h) and the device
ID are shifted out on the falling edge of SCLK with the most significant bit (MSB) first. If the address byte is 00h, the
manufacturer ID will be output first, followed by the device ID. If the address byte is 01h, then the device ID will be
output first, followed by the manufacturer ID. While CS# is low, the manufacturer and device IDs can be read continuously, alternating from one to the other. The instruction is completed by driving CS# high.
Figure 15. Read Electronic Manufacturer & Device ID (REMS) Sequence (SPI Mode only)
CS#
SCLK
Mode 3
0
1
2
Mode 0
3
4
5
6
7
8
Command
SI
9 10
2 Dummy Bytes
15 14 13
90h
3
2
1
0
High-Z
SO
CS#
28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
ADD (1)
SI
7
6
5
4
3
2
1
0
Manufacturer ID
SO
7
6
5
4
3
2
1
Device ID
0
7
MSB
MSB
6
5
4
3
2
1
7
0
MSB
Note: (1) ADD=00H will output the manufacturer's ID first and ADD=01H will output device ID first.
P/N: PM1795
25
Rev. 1.6, July 22, 2016
MX25L12835F
9-6. QPI ID Read (QPIID)
User can execute this QPIID Read instruction to identify the Device ID and Manufacturer ID. The sequence of issue
QPIID instruction is CS# goes low→sending QPI ID instruction→Data out on SO→CS# goes high. Most significant
bit (MSB) first.
After the command cycle, the device will immediately output data on the falling edge of SCLK. The manufacturer ID,
memory type, and device ID data byte will be output continuously, until the CS# goes high.
Table 6. ID Definitions
Command Type
RDID
9Fh
RES
ABh
REMS
90h
QPIID
AFh
P/N: PM1795
MX25L12835F
Manufacturer ID
C2
Manufacturer ID
C2
Manufacturer ID
C2
Memory type
20
Electronic ID
17
Device ID
17
Memory type
20
26
Memory density
18
Memory density
18
Rev. 1.6, July 22, 2016
MX25L12835F
9-7. Read Status Register (RDSR)
The RDSR instruction is for reading Status Register Bits. The Read Status Register can be read at any time (even
in program/erase/write status register condition). It is recommended to check the Write in Progress (WIP) bit before
sending a new instruction when a program, erase, or write status register operation is in progress.
The sequence of issuing RDSR instruction is: CS# goes low→ sending RDSR instruction code→ Status Register data
out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 16. Read Status Register (RDSR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
05h
SI
SO
Status Register Out
High-Z
7
6
5
4
3
2
1
Status Register Out
0
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 17. Read Status Register (RDSR) Sequence (QPI Mode)
CS#
Mode 3 0
1
2
3
4
5
6
7
N
SCLK
Mode 0
SIO[3:0]
05h H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
Status Byte Status Byte Status Byte
P/N: PM1795
27
Status Byte
Rev. 1.6, July 22, 2016
MX25L12835F
9-8. Read Configuration Register (RDCR)
The RDCR instruction is for reading Configuration Register Bits. The Read Configuration Register can be read at
any time (even in program/erase/write configuration register condition). It is recommended to check the Write in
Progress (WIP) bit before sending a new instruction when a program, erase, or write configuration register operation
is in progress.
The sequence of issuing RDCR instruction is: CS# goes low→ sending RDCR instruction code→ Configuration Register data out on SO.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Figure 18. Read Configuration Register (RDCR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
15h
SI
SO
Configuration register Out
High-Z
7
6
5
4
3
2
1
0
Configuration register Out
7
6
5
4
3
2
1
0
7
MSB
MSB
Figure 19. Read Configuration Register (RDCR) Sequence (QPI Mode)
CS#
Mode 3 0
1
2
3
4
5
6
7
N
SCLK
Mode 0
SIO[3:0]
15h H0 L0 H0 L0 H0 L0
H0 L0
MSB LSB
Config. Byte Config. Byte Config. Byte
P/N: PM1795
28
Config. Byte
Rev. 1.6, July 22, 2016
MX25L12835F
For user to check if Program/Erase operation is finished or not, RDSR instruction flow are shown as follows:
Figure 20. Program/Erase flow with read array data
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Read array data
(same address of PGM/ERS)
Verify OK?
No
Yes
Program/erase successfully
Program/erase
another block?
No
Program/erase fail
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
Program/erase completed
P/N: PM1795
29
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 21. Program/Erase flow without read array data (read P_FAIL/E_FAIL flag)
start
WREN command
RDSR command*
WEL=1?
No
Yes
Program/erase command
Write program data/address
(Write erase address)
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
RDSCUR command
Yes
P_FAIL/E_FAIL =1 ?
No
Program/erase fail
Program/erase successfully
Program/erase
another block?
No
Yes
* Issue RDSR to check BP[3:0].
* If WPSEL = 1, issue RDSPB and RDDPB to check the block status.
Program/erase completed
P/N: PM1795
30
Rev. 1.6, July 22, 2016
MX25L12835F
Status Register
The definition of the status register bits is as below:
WIP bit. The Write in Progress (WIP) bit, a volatile bit, indicates whether the device is busy in program/erase/write status register progress. When WIP bit sets to 1, which means the device is busy in program/erase/write status register
progress. When WIP bit sets to 0, which means the device is not in progress of program/erase/write status register
cycle.
WEL bit. The Write Enable Latch (WEL) bit, a volatile bit, indicates whether the device is set to internal write enable
latch. When WEL bit sets to 1, which means the internal write enable latch is set, the device can accept program/
erase/write status register instruction. When WEL bit sets to 0, which means no internal write enable latch; the device
will not accept program/erase/write status register instruction. The program/erase command will be ignored if it is applied to a protected memory area. To ensure both WIP bit & WEL bit are both set to 0 and available for next program/
erase/operations, WIP bit needs to be confirm to be 0 before polling WEL bit. After WIP bit confirmed, WEL bit needs
to be confirm to be 0.
BP3, BP2, BP1, BP0 bits. The Block Protect (BP3, BP2, BP1, BP0) bits, non-volatile bits, indicate the protected area
(as defined in Table 2. Protected Area Sizes) of the device to against the program/erase instruction without hardware
protection mode being set. To write the Block Protect (BP3, BP2, BP1, BP0) bits requires the Write Status Register (WRSR)
instruction to be executed. Those bits define the protected area of the memory to against Page Program (PP), Sector
Erase (SE), Block Erase 32KB (BE32K), Block Erase (BE) and Chip Erase (CE) instructions (only if Block Protect bits
(BP3:BP0) set to 0, the CE instruction can be executed). The BP3, BP2, BP1, BP0 bits are "0" as default. Which is unprotected.
QE bit. The Quad Enable (QE) bit, non-volatile bit, while it is "0" (factory default), it performs non-Quad and WP#,
RESET# are enable. While QE is "1", it performs Quad I/O mode and WP#, RESET# are disabled. In the other
word, if the system goes into four I/O mode (QE=1), the feature of HPM and RESET# will be disabled.
SRWD bit. The Status Register Write Disable (SRWD) bit, non-volatile bit, is operated together with Write Protection
(WP#/SIO2) pin for providing hardware protection mode. The hardware protection mode requires SRWD sets to 1 and
WP#/SIO2 pin signal is low stage. In the hardware protection mode, the Write Status Register (WRSR) instruction is
no longer accepted for execution and the SRWD bit and Block Protect bits (BP3, BP2, BP1, BP0) are read only. The
SRWD bit defaults to be "0".
Status Register
bit7
SRWD (status
register write
protect)
bit6
QE
(Quad
Enable)
1=status
register write
1=Quad
disabled
Enable
0=status
0=not Quad
register write
Enable
enabled
bit5
BP3
(level of
protected
block)
(note 1)
bit4
BP2
(level of
protected
block)
bit3
BP1
(level of
protected
block)
(note 1)
(note 1)
Non-volatile Non-volatile Non-volatile Non-volatile Non-volatile
bit
bit
bit
bit
bit
Note 1: Please refer to the Table 2. Protected Area Sizes.
P/N: PM1795
31
bit2
BP0
(level of
protected
block)
(note 1)
Non-volatile
bit
bit1
bit0
WEL
WIP
(write enable
(write in
latch)
progress bit)
1=write
1=write
enable
operation
0=not write 0=not in write
enable
operation
volatile bit
volatile bit
Rev. 1.6, July 22, 2016
MX25L12835F
Configuration Register
The Configuration Register is able to change the default status of Flash memory. Flash memory will be configured
after the CR bit is set.
ODS bit
The output driver strength (ODS2, ODS1, ODS0) bits are volatile bits, which indicate the output driver level (as
defined in Output Driver Strength Table) of the device. The Output Driver Strength is defaulted as 30 Ohms when
delivered from factory. To write the ODS bits requires the Write Status Register (WRSR) instruction to be executed.
TB bit
The Top/Bottom (TB) bit is a non-volatile OTP bit. The Top/Bottom (TB) bit is used to configure the Block Protect
area by BP bit (BP3, BP2, BP1, BP0), starting from TOP or Bottom of the memory array. The TB bit is defaulted as
“0”, which means Top area protect. When it is set as “1”, the protect area will change to Bottom area of the memory
device. To write the TB bits requires the Write Status Register (WRSR) instruction to be executed.
Table 7. Configuration Register Table
bit7
DC1
(Dummy
cycle 1)
bit6
DC0
(Dummy
cycle 0)
bit5
bit4
Reserved
Reserved
(note 2)
(note 2)
x
x
volatile bit
volatile bit
x
x
bit3
bit2
bit1
bit0
TB
ODS 2
ODS 1
ODS 0
(top/bottom (output driver (output driver (output driver
selected)
strength)
strength)
strength)
0=Top area
protect
1=Bottom
(note 1)
(note 1)
(note 1)
area protect
(Default=0)
OTP
volatile bit
volatile bit
volatile bit
Note 1: Please refer to Output Driver Strength Table
Note 2: Please refer to Dummy Cycle and Frequency Table (MHz)
P/N: PM1795
32
Rev. 1.6, July 22, 2016
MX25L12835F
Output Driver Strength Table
ODS2
0
0
0
0
1
1
1
1
ODS1
0
0
1
1
0
0
1
1
ODS0
0
1
0
1
0
1
0
1
Description
Reserved
90 Ohms
60 Ohms
45 Ohms
Reserved
20 Ohms
15 Ohms
30 Ohms (Default)
Note
Impedance at VCC/2
Dummy Cycle and Frequency Table (MHz)
DC[1:0]
00 (default)
01
10
11
DC[1:0]
00 (default)
01
10
11
DC[1:0]
00 (default)
01
10
11
P/N: PM1795
Numbers of Dummy
clock cycles
8
6
8
10
Numbers of Dummy
clock cycles
4
6
8
10
Fast Read
104
104
104
133
Dual Output Fast
Read
104
104
104
133
Quad Output Fast
Read
104
84
104
133
Dual IO Fast Read
84
104
104
133
Numbers of Dummy
Quad IO Fast Read
clock cycles
6
84
4
70
8
104
10
133
33
Rev. 1.6, July 22, 2016
MX25L12835F
9-9. Write Status Register (WRSR)
The WRSR instruction is for changing the values of Status Register Bits and Configuration Register Bits. Before
sending WRSR instruction, the Write Enable (WREN) instruction must be decoded and executed to set the Write
Enable Latch (WEL) bit in advance. The WRSR instruction can change the value of Block Protect (BP3, BP2, BP1,
BP0) bits to define the protected area of memory (as shown in Table 2. Protected Area Sizes). The WRSR also can
set or reset the Quad enable (QE) bit and set or reset the Status Register Write Disable (SRWD) bit in accordance
with Write Protection (WP#/SIO2) pin signal, but has no effect on bit1(WEL) and bit0 (WIP) of the status register.
The WRSR instruction cannot be executed once the Hardware Protected Mode (HPM) is entered.
The sequence of issuing WRSR instruction is: CS# goes low→ sending WRSR instruction code→ Status Register
data on SI→CS# goes high.
The CS# must go high exactly at the 8 bits or 16 bits data boundary; otherwise, the instruction will be rejected and
not executed. The self-timed Write Status Register cycle time (tW) is initiated as soon as Chip Select (CS#) goes
high. The Write in Progress (WIP) bit still can be check out during the Write Status Register cycle is in progress.
The WIP sets 1 during the tW timing, and sets 0 when Write Status Register Cycle is completed, and the Write Enable Latch (WEL) bit is reset.
Figure 22. Write Status Register (WRSR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Mode 0
SI
SO
command
01h
Status
Register In
7
6
4
5
Configuration
Register In
2
3
0 15 14 13 12 11 10 9
1
8
MSB
High-Z
Note : The CS# must go high exactly at 8 bits or 16 bits data boundary to completed the write register command.
Figure 23. Write Status Register (WRSR) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
Mode 3
SCLK
Mode 0
Mode 0
SR in
Command
SIO[3:0]
P/N: PM1795
01h
H0
34
L0
CR in
H1
L1
Rev. 1.6, July 22, 2016
MX25L12835F
Software Protected Mode (SPM):
- When SRWD bit=0, no matter WP#/SIO2 is low or high, the WREN instruction may set the WEL bit and can
change the values of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1,
BP0 and T/B bit, is at software protected mode (SPM).
- When SRWD bit=1 and WP#/SIO2 is high, the WREN instruction may set the WEL bit can change the values
of SRWD, BP3, BP2, BP1, BP0. The protected area, which is defined by BP3, BP2, BP1, BP0 and T/B bit, is at
software protected mode (SPM)
Note:
If SRWD bit=1 but WP#/SIO2 is low, it is impossible to write the Status Register even if the WEL bit has previously
been set. It is rejected to write the Status Register and not be executed.
Hardware Protected Mode (HPM):
- When SRWD bit=1, and then WP#/SIO2 is low (or WP#/SIO2 is low before SRWD bit=1), it enters the hardware
protected mode (HPM). The data of the protected area is protected by software protected mode by BP3, BP2,
BP1, BP0 and T/B bit and hardware protected mode by the WP#/SIO2 to against data modification.
Note:
To exit the hardware protected mode requires WP#/SIO2 driving high once the hardware protected mode is entered.
If the WP#/SIO2 pin is permanently connected to high, the hardware protected mode can never be entered; only
can use software protected mode via BP3, BP2, BP1, BP0 and T/B bit.
If the system enter QPI or set QE=1, the feature of HPM will be disabled.
Table 8. Protection Modes
Mode
Software protection
mode (SPM)
Hardware protection
mode (HPM)
Status register condition
WP# and SRWD bit status
Memory
Status register can be written
in (WEL bit is set to "1") and
the SRWD, BP0-BP3
bits can be changed
WP#=1 and SRWD bit=0, or
WP#=0 and SRWD bit=0, or
WP#=1 and SRWD=1
The protected area
cannot
be program or erase.
The SRWD, BP0-BP3 of
status register bits cannot be
changed
WP#=0, SRWD bit=1
The protected area
cannot
be program or erase.
Note:
1. As defined by the values in the Block Protect (BP3, BP2, BP1, BP0) bits of the Status Register, as shown in Table 2.
Protected Area Sizes.
P/N: PM1795
35
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 24. WRSR flow
start
WREN command
RDSR command
WEL=1?
No
Yes
WRSR command
Write status register data
RDSR command
WIP=0?
No
Yes
RDSR command
Read WEL=0, BP[3:0], QE,
and SRWD data
Verify OK?
No
Yes
WRSR successfully
P/N: PM1795
WRSR fail
36
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 25. WP# Setup Timing and Hold Timing during WRSR when SRWD=1
WP#
tSHWL
tWHSL
CS#
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
SCLK
01h
SI
SO
High-Z
Note: WP# must be kept high until the embedded operation finish.
P/N: PM1795
37
Rev. 1.6, July 22, 2016
MX25L12835F
9-10. Read Data Bytes (READ)
The read instruction is for reading data out. The address is latched on rising edge of SCLK, and data shifts out on
the falling edge of SCLK at a maximum frequency fR. The first address byte can be at any location. The address
is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can
be read out at a single READ instruction. The address counter rolls over to 0 when the highest address has been
reached.
The sequence of issuing READ instruction is: CS# goes low→sending READ instruction code→ 3-byte address on
SI→ data out on SO→to end READ operation can use CS# to high at any time during data out.
Figure 26. Read Data Bytes (READ) Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
Mode 0
SI
command
03h
24-Bit Address
23 22 21
3
2
1
0
MSB
SO
Data Out 1
High-Z
7
6
5
4
3
2
Data Out 2
1
0
7
MSB
P/N: PM1795
38
Rev. 1.6, July 22, 2016
MX25L12835F
9-11. Read Data Bytes at Higher Speed (FAST_READ)
The FAST_READ instruction is for quickly reading data out. The address is latched on rising edge of SCLK, and
data of each bit shifts out on the falling edge of SCLK at a maximum frequency fC. The first address byte can be at
any location. The address is automatically increased to the next higher address after each byte data is shifted out,
so the whole memory can be read out at a single FAST_READ instruction. The address counter rolls over to 0 when
the highest address has been reached.
Read on SPI Mode The sequence of issuing FAST_READ instruction is: CS# goes low→ sending FAST_READ
instruction code→ 3-byte address on SI→ 8 dummy cycles (default)→ data out on SO→ to end FAST_READ operation can use CS# to high at any time during data out.
In the performance-enhancing mode, P[7:4] must be toggling with P[3:0] ; likewise P[7:0]=A5h,5Ah,F0h or 0Fh can
make this mode continue and reduce the next 4READ instruction. Once P[7:4] is no longer toggling with P[3:0]; likewise P[7:0]=FFh,00h,AAh or 55h and afterwards CS# is raised and then lowered, the system then will escape from
performance enhance mode and return to normal operation.
While Program/Erase/Write Status Register cycle is in progress, FAST_READ instruction is rejected without any impact on the Program/Erase/Write Status Register current cycle.
Figure 27. Read at Higher Speed (FAST_READ) Sequence (SPI Mode)
CS#
SCLK
Mode 3
0
1
2
Mode 0
3
5
6
7
8
9 10
Command
SI
SO
4
28 29 30 31
24-Bit Address
23 22 21
0Bh
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Configurable
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
4
2
1
0
7
MSB
MSB
P/N: PM1795
3
39
6
5
4
3
2
1
0
7
MSB
Rev. 1.6, July 22, 2016
MX25L12835F
9-12. Dual Output Read Mode (DREAD)
The DREAD instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single DREAD instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing DREAD instruction, the following data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing DREAD instruction is: CS# goes low→ sending DREAD instruction→3-byte address on
SIO0→ 8 dummy cycles (default) on SIO0→ data out interleave on SIO1 & SIO0→ to end DREAD operation can
use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, DREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 28. Dual Read Mode Sequence
CS#
0
1
2
3
4
5
6
7
8
SCLK
…
Command
SI/SIO0
SO/SIO1
P/N: PM1795
30 31 32
9
3B
…
24 ADD Cycle
A23 A22
…
39 40 41 42 43 44 45
A1 A0
High Impedance
Configurable
Dummy Cycle
Data Out
1
Data Out
2
D6 D4 D2 D0 D6 D4
D7 D5 D3 D1 D7 D5
40
Rev. 1.6, July 22, 2016
MX25L12835F
9-13. 2 x I/O Read Mode (2READ)
The 2READ instruction enable double throughput of Serial Flash in read mode. The address is latched on rising
edge of SCLK, and data of every two bits (interleave on 2 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fT. The first address byte can be at any location. The address is automatically increased to the next
higher address after each byte data is shifted out, so the whole memory can be read out at a single 2READ instruction. The address counter rolls over to 0 when the highest address has been reached. Once writing 2READ instruction, the following address/dummy/data out will perform as 2-bit instead of previous 1-bit.
The sequence of issuing 2READ instruction is: CS# goes low→ sending 2READ instruction→ 3-byte address interleave on SIO1 & SIO0→ 4 dummy cycles (default) on SIO1 & SIO0→ data out interleave on SIO1 & SIO0→ to end
2READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 2READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 29. 2 x I/O Read Mode Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
17 18 19 20 21 22 23 24 25 26 27 28 29 30
Mode 3
SCLK
Mode 0
Command
SI/SIO0
SO/SIO1
P/N: PM1795
BBh
12 ADD Cycles
Configurable
Dummy Cycle
Data
Out 1
Data
Out 2
A22 A20 A18
A4 A2 A0
D6 D4 D2 D0 D6 D4 D2 D0
A23 A21 A19
A5 A3 A1
D7 D5 D3 D1 D7 D5 D3 D1
41
Mode 0
Rev. 1.6, July 22, 2016
MX25L12835F
9-14. Quad Read Mode (QREAD)
The QREAD instruction enable quad throughput of Serial Flash in read mode. The address is latched on rising edge
of SCLK, and data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum
frequency fQ. The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single QREAD instruction.
The address counter rolls over to 0 when the highest address has been reached. Once writing QREAD instruction,
the following data out will perform as 4-bit instead of previous 1-bit.
The sequence of issuing QREAD instruction is: CS# goes low→ sending QREAD instruction → 3-byte address on
SI → 8 dummy cycle (Default) → data out interleave on SIO3, SIO2, SIO1 & SIO0→ to end QREAD operation can
use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, QREAD instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
Figure 30. Quad Read Mode Sequence
CS#
0
1
2
3
4
5
6
7
8
SCLK
…
Command
SIO0
SIO1
SIO2
SIO3
P/N: PM1795
29 30 31 32 33
9
6B
…
24 ADD Cycles
A23 A22
…
High Impedance
38 39 40 41 42
A2 A1 A0
Configurable
dummy cycles
Data Data Data
Out 1 Out 2 Out 3
D4 D0 D4 D0 D4
D5 D1 D5 D1 D5
High Impedance
D6 D2 D6 D2 D6
High Impedance
D7 D3 D7 D3 D7
42
Rev. 1.6, July 22, 2016
MX25L12835F
9-15. 4 x I/O Read Mode (4READ)
The 4READ instruction enable quad throughput of Serial Flash in read mode. A Quad Enable (QE) bit of status Register must be set to "1" before sending the 4READ instruction. The address is latched on rising edge of SCLK, and
data of every four bits (interleave on 4 I/O pins) shift out on the falling edge of SCLK at a maximum frequency fQ.
The first address byte can be at any location. The address is automatically increased to the next higher address after each byte data is shifted out, so the whole memory can be read out at a single 4READ instruction. The address
counter rolls over to 0 when the highest address has been reached. Once writing 4READ instruction, the following
address/dummy/data out will perform as 4-bit instead of previous 1-bit.
4 x I/O Read on SPI Mode (4READ) The sequence of issuing 4READ instruction is: CS# goes low→ sending
4READ instruction→ 3-byte address interleave on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out
interleave on SIO3, SIO2, SIO1 & SIO0→ to end 4READ operation can use CS# to high at any time during data out.
4 x I/O Read on QPI Mode (4READ) The 4READ instruction also support on QPI command mode. The sequence
of issuing 4READ instruction QPI mode is: CS# goes low→ sending 4READ instruction→ 3-byte address interleave
on SIO3, SIO2, SIO1 & SIO0→ 6 dummy cycles (Default) →data out interleave on SIO3, SIO2, SIO1 & SIO0→ to
end 4READ operation can use CS# to high at any time during data out.
While Program/Erase/Write Status Register cycle is in progress, 4READ instruction is rejected without any impact
on the Program/Erase/Write Status Register current cycle.
P/N: PM1795
43
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 31. 4 x I/O Read Mode Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
Mode 3
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
SCLK
Mode 0
Command
6 ADD Cycles
Data
Out 1
Performance
enhance
indicator (Note 1)
Data
Out 2
Mode 0
Data
Out 3
Configurable
Dummy Cycle (Note 3)
EBh
A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0 D4 D0
SIO1
A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1 D5 D1
SIO2
A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2 D6 D2
SIO3
A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3 D7 D3
SIO0
Notes:
1. Hi-impedance is inhibited for the two clock cycles.
2. P7≠P3, P6≠P2, P5≠P1 & P4≠P0 (Toggling) is inhibited.
3. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
Figure 32. 4 x I/O Read Mode Sequence (QPI Mode)
CS#
MODE 3
0
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
MODE 3
SCLK
MODE 0
SIO[3:0]
P/N: PM1795
MODE 0
EB
A5 A4 A3 A2 A1 A0
Data In
24-bit Address
X
X
X
X
Configurable
Dummy Cycle
44
X
X
H0 L0 H1 L1 H2 L2 H3 L3
MSB
Data Out
Rev. 1.6, July 22, 2016
MX25L12835F
9-16. Burst Read
This device supports Burst Read in both SPI and QPI mode.
To set the Burst length, following command operation is required to issue command: “C0h” in the first Byte (8-clocks),
following 4 clocks defining wrap around enable with “0h” and disable with“1h”.
The next 4 clocks are to define wrap around depth. Their definitions are as the following table:
Data
00h
01h
02h
03h
1xh
Wrap Around
Yes
Yes
Yes
Yes
No
Wrap Depth
8-byte
16-byte
32-byte
64-byte
X
The wrap around unit is defined within the 256Byte page, with random initial address. It is defined as “wrap-around
mode disable” for the default state of the device. To exit wrap around, it is required to issue another “C0” command
in which data=‘1xh”. Otherwise, wrap around status will be retained until power down or reset command. To change
wrap around depth, it is requried to issue another “C0” command in which data=“0xh”. QPI “EBh” and SPI “EBh”
support wrap around feature after wrap around is enabled. Burst read is supported in both SPI and QPI mode. The
device is default without Burst read.
Figure 33. SPI Mode
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
D7
D6
10
11
12
13
14
15
SCLK
Mode 0
SIO
C0h
D5
D4
D3
D2
D1
D0
Figure 34. QPI Mode
CS#
Mode 3
0
1
2
3
SCLK
Mode 0
SIO[3:0]
C0h
H0
MSB
L0
LSB
Note: MSB=Most Significant Bit
LSB=Least Significant Bit
P/N: PM1795
45
Rev. 1.6, July 22, 2016
MX25L12835F
9-17. Performance Enhance Mode
The device could waive the command cycle bits if the two cycle bits after address cycle toggles.
Performance enhance mode is supported in both SPI and QPI mode.
In QPI mode, “EBh” and SPI “EBh” commands support enhance mode. The performance enhance mode is not
supported in dual I/O mode.
To enter performance-enhancing mode, P[7:4] must be toggling with P[3:0]; likewise P[7:0]=A5h, 5Ah, F0h or 0Fh
can make this mode continue and skip the next 4READ instruction. To leave enhance mode, P[7:4] is no longer
toggling with P[3:0]; likewise P[7:0]=FFh, 00h, AAh or 55h along with CS# is afterwards raised and then lowered.
Issuing ”FFh” data cycle can also exit enhance mode. The system then will leave performance enhance mode and
return to normal operation.
After entering enhance mode, following CS# go high, the device will stay in the read mode and treat CS# go low of
the first clock as address instead of command cycle.
This sequence of issuing 4READ instruction is especially useful in random access: CS# goes low→send 4READ
instruction→3-bytes address interleave on SIO3, SIO2, SIO1 & SIO0 →performance enhance toggling bit P[7:0]→
4 dummy cycles (Default) →data out until CS# goes high → CS# goes low (the following 4READ instruction is
ignored) → 3-bytes random access address.
To conduct the Performance Enhance Mode Reset operation in SPI mode, FFh data cycle, 8 clocks, should be issued in 1I/O sequence. In QPI Mode, FFFFFFFFh data cycle, 8 clocks, in 4I/O should be issued.
If the system controller is being Reset during operation, the flash device will return to the standard SPI operation.
P/N: PM1795
46
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 35. 4 x I/O Read enhance performance Mode Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22
n
SCLK
Mode 0
Data
Out 2
Data
Out n
A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0
D4 D0
SIO1
A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1
D5 D1
SIO2
A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2
D6 D2
SIO3
A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3
D7 D3
Command
6 ADD Cycles
Data
Out 1
Performance
enhance
indicator (Note 1)
Configurable
Dummy Cycle (Note 2)
EBh
SIO0
CS#
n+1
...........
n+7 ...... n+9
........... n+13
...........
Mode 3
SCLK
6 ADD Cycles
Performance
enhance
indicator (Note 1)
Data
Out 1
Data
Out 2
Data
Out n
Mode 0
Configurable
Dummy Cycle (Note 2)
SIO0
A20 A16 A12 A8 A4 A0 P4 P0
D4 D0 D4 D0
D4 D0
SIO1
A21 A17 A13 A9 A5 A1 P5 P1
D5 D1 D5 D1
D5 D1
SIO2
A22 A18 A14 A10 A6 A2 P6 P2
D6 D2 D6 D2
D6 D2
SIO3
A23 A19 A15 A11 A7 A3 P7 P3
D7 D3 D7 D3
D7 D3
Notes:
1. If not using performance enhance recommend to keep 1 or 0 in performance enhance indicator.
Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF.
2. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
P/N: PM1795
47
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 36. 4 x I/O Read enhance performance Mode Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
A1
A0
8
9
10
11
12
13
14
15
16
17
H0
L0
H1
L1
SCLK
Mode 0
SIO[3:0]
EBh
A5
A4
A3
A2
X
X
X
X
MSB LSB MSB LSB
P(7:4) P(3:0)
Data In
Data Out
performance
enhance
indicator
Configurable
Dummy Cycle (Note 1)
CS#
n+1
.............
SCLK
Mode 0
SIO[3:0]
A5
A4
A3
A2
A1
X
A0
X
X
H0
L0
H1
L1
MSB LSB MSB LSB
P(7:4) P(3:0)
6 Address cycles
X
Data Out
performance
enhance
indicator
Configurable
Dummy Cycle (Note 1)
Notes:
1. Configuration Dummy cycle numbers will be different depending on the bit6 & bit 7 (DC0 & DC1) setting in
configuration register.
2. Reset the performance enhance mode, if P7=P3 or P6=P2 or P5=P1 or P4=P0, ex: AA, 00, FF.
P/N: PM1795
48
Rev. 1.6, July 22, 2016
MX25L12835F
9-18. Fast Boot
The Fast Boot Feature provides the ability to automatically execute read operation after power on cycle or reset
without any read instruction.
A Fast Boot Register is provided on this device. It can enable the Fast Boot function and also define the number of
delay cycles and start address (where boot code being transferred). Instruction WRFBR (write fast boot register) and
ESFBR (erase fast boot register) can be used for the status configuration or alternation of the Fast Boot Register
bit. RDFBR (read fast boot register) can be used to verify the program state of the Fast Boot Register. The default
number of delay cycles is 13 cycles, and there is a 16bytes boundary address for the start of boot code access.
When CS# starts to go low, data begins to output from default address after the delay cycles (default as 13 cycles).
After CS# returns to go high, the device will go back to standard SPI mode. In the fast boot data out process from
CS# goes low to CS# goes high, a minimum of one byte must be output.
Once Fast Boot feature has been enabled, the device will automatically start a read operation after power on cycle,
reset command, or hardware reset operation.
The fast Boot feature can support Single I/O and Quad I/O interface. If the QE bit of Status Register is “0”, the data
is output by Single I/O interface. If the QE bit of Status Register is set to “1”, the data is output by Quad I/O interface.
Fast Boot Register (FBR)
Bits
31 to 4
Description
FBSA (FastBoot Start
Address)
3
x
2 to 1
FBSD (FastBoot Start
Delay Cycle)
0
FBE (FastBoot Enable)
Bit Status
Default State
16 bytes boundary address for the start of boot
FFFFFFF
code access.
1
00: 7 delay cycles
01: 9 delay cycles
10: 11 delay cycles
11: 13 delay cycles
0=FastBoot is enabled.
1=FastBoot is not enabled.
Type
NonVolatile
NonVolatile
11
NonVolatile
1
NonVolatile
Note: If FBSD = 11, the maximum clock frequency is 133 MHz
If FBSD = 10, the maximum clock frequency is 104 MHz
If FBSD = 01, the maximum clock frequency is 84 MHz
If FBSD = 00, the maximum clock frequency is 70 MHz
P/N: PM1795
49
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 37. Fast Boot Sequence (QE bit =0)
CS#
Mode 3
0
-
-
-
-
-
-
n+1 n+2 n+3 n+4 n+5 n+6 n+7 n+8 n+9 n+10 n+11n+12n+13n+14n+15
n
SCLK
Mode 0
Delay Cycles
Don’t care or High Impedance
SI
Data Out 1
High Impedance
SO
7
6
5
4
3
2
Data Out 2
1
0
MSB
7
6
5
4
3
2
MSB
1
0
7
MSB
Note: If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
Figure 38. Fast Boot Sequence (QE bit =1)
CS#
Mode 3
0
-
-
-
-
-
-
-
n
n+1 n+2 n+3 n+5 n+6 n+7 n+8 n+9
SCLK
Mode 0
SIO0
SIO1
SIO2
SIO3
Delay Cycles
Data Data
Out 1 Out 2
High Impedance
High Impedance
High Impedance
High Impedance
Data
Out 3
Data
Out 4
4
0
4
0
4
0
4
0
4
5
1
5
1
5
1
5
1
5
6
2
6
2
6
2
6
2
6
7
3
7
3
7
3
7
3
7
MSB
Note: If FBSD = 11, delay cycles is 13 and n is 12.
If FBSD = 10, delay cycles is 11 and n is 10.
If FBSD = 01, delay cycles is 9 and n is 8.
If FBSD = 00, delay cycles is 7 and n is 6.
P/N: PM1795
50
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 39. Read Fast Boot Register (RDFBR) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
37 38 39 40 41
SCLK
Mode 0
Command
SI
16h
Data Out 1
High-Z
SO
7
6
Data Out 2
5
26 25 24 7
6
MSB
MSB
Figure 40. Write Fast Boot Register (WRFBR) Sequence
CS#
0
Mode 3
1
2
3
4
5
6
7
8
9 10
37 38 39
SCLK
Mode 0
Command
SI
Fast Boot Register
17h
7
6
5
26 25 24
MSB
High-Z
SO
Figure 41. Erase Fast Boot Register (ESFBR) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
SI
SO
P/N: PM1795
Command
18h
High-Z
51
Rev. 1.6, July 22, 2016
MX25L12835F
9-19. Sector Erase (SE)
The Sector Erase (SE) instruction is for erasing the data of the chosen sector to be "1". The instruction is used for
any 4K-byte sector. A Write Enable (WREN) instruction must execute to set the Write Enable Latch (WEL) bit before
sending the Sector Erase (SE). Any address of the sector (see Table 4. Memory Organization) is a valid address
for Sector Erase (SE) instruction. The CS# must go high exactly at the byte boundary (the least significant bit of the
address byte been latched-in); otherwise, the instruction will be rejected and not executed.
Address bits [Am-A12] (Am is the most significant address) select the sector address.
The sequence of issuing SE instruction is: CS# goes low→ sending SE instruction code→ 3-byte address on SI→
CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Sector Erase Cycle time (tSE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Sector Erase cycle is in progress. The WIP sets 1 during the tSE
timing, and clears when Sector Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode), the Sector Erase (SE) instruction will not be executed on the block.
Figure 42. Sector Erase (SE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
24-Bit Address
Command
SI
20h
A23 A22
A2 A1 A0
MSB
Figure 43. Sector Erase (SE) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
Command
SIO[3:0]
20h A5 A4 A3 A2 A1 A0
MSB
P/N: PM1795
52
Rev. 1.6, July 22, 2016
MX25L12835F
9-20. Block Erase (BE32K)
The Block Erase (BE32K) instruction is for erasing the data of the chosen block to be "1". The instruction is used
for 32K-byte block erase operation. A Write Enable (WREN) instruction be executed to set the Write Enable Latch
(WEL) bit before sending the Block Erase (BE32K). Any address of the block (see Table 4. Memory Organization) is
a valid address for Block Erase (BE32K) instruction. The CS# must go high exactly at the byte boundary (the least
significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE32K instruction is: CS# goes low→ sending BE32K instruction code→ 3-byte address
on SI→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE32K) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while during the Block Erase cycle is in progress. The WIP sets during the
tBE32K timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If
the Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Block Erase (BE32K) instruction will not be executed on the block.
Figure 44. Block Erase 32KB (BE32K) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
Command
SI
24-Bit Address
52h
A23 A22
A2 A1 A0
MSB
Figure 45. Block Erase 32KB (BE32K) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
Command
SIO[3:0]
52h
A5 A4 A3 A2 A1 A0
MSB
P/N: PM1795
53
Rev. 1.6, July 22, 2016
MX25L12835F
9-21. Block Erase (BE)
The Block Erase (BE) instruction is for erasing the data of the chosen block to be "1". The instruction is used for
64K-byte block erase operation. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch
(WEL) bit before sending the Block Erase (BE). Any address of the block (Please refer to Table 4. Memory Organization) is a valid address for Block Erase (BE) instruction. The CS# must go high exactly at the byte boundary (the
least significant bit of address byte been latched-in); otherwise, the instruction will be rejected and not executed.
The sequence of issuing BE instruction is: CS# goes low→ sending BE instruction code→ 3-byte address on SI→
CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Block Erase Cycle time (tBE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Block Erase cycle is in progress. The WIP sets during the tBE
timing, and clears when Block Erase Cycle is completed, and the Write Enable Latch (WEL) bit is reset. If the Block
is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode),
the Block Erase (BE) instruction will not be executed on the block.
Figure 46. Block Erase (BE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
29 30 31
SCLK
Mode 0
Command
SI
24-Bit Address
D8h
A23 A22
A2 A1 A0
MSB
Figure 47. Block Erase (BE) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
24-Bit Address
Command
SIO[3:0]
D8h
A5 A4 A3 A2 A1 A0
MSB
P/N: PM1795
54
Rev. 1.6, July 22, 2016
MX25L12835F
9-22. Chip Erase (CE)
The Chip Erase (CE) instruction is for erasing the data of the whole chip to be "1". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit before sending the Chip Erase (CE). The CS# must
go high exactly at the byte boundary, otherwise the instruction will be rejected and not executed.
The sequence of issuing CE instruction is: CS# goes low→sending CE instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The self-timed Chip Erase Cycle time (tCE) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Chip Erase cycle is in progress. The WIP sets during the tCE timing, and clears when Chip Erase Cycle is completed, and the Write Enable Latch (WEL) bit is cleared.
When the chip is under "Block protect (BP) Mode" (WPSEL=0). The Chip Erase(CE) instruction will not be executed, if one (or more) sector is protected by BP3-BP0 bits. It will be only executed when BP3-BP0 all set to "0".
When the chip is under "Advances Sector Protect Mode" (WPSEL=1). The Chip Erase (CE) instruction will be executed on unprotected block. The protected Block will be skipped. If one (or more) 4K byte sector was protected in
top or bottom 64K byte block, the protected block will also skip the chip erase command.
Figure 48. Chip Erase (CE) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
60h or C7h
Figure 49. Chip Erase (CE) Sequence (QPI Mode)
CS#
Mode 3
0
1
SCLK
Mode 0
SIO[3:0]
P/N: PM1795
Command
60h or C7h
55
Rev. 1.6, July 22, 2016
MX25L12835F
9-23. Page Program (PP)
The Page Program (PP) instruction is for programming memory bits to "0". One to 256 bytes can be sent to the device to be programmed. A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL)
bit before sending the Page Program (PP). If more than 256 data bytes are sent to the device, only the last 256
data bytes will be accepted and the previous data bytes will be disregarded. The Page Program instruction requires
that all the data bytes fall within the same 256-byte page. The low order address byte A[7:0] specifies the starting
address within the selected page. Bytes that will cross a page boundary will wrap to the beginning of the selected
page. The device can accept (256 minus A[7:0]) data bytes without wrapping. If 256 data bytes are going to be programmed, A[7:0] should be set to 0.
The sequence of issuing PP instruction is: CS# goes low→ sending PP instruction code→ 3-byte address on SI→ at
least 1-byte on data on SI→ CS# goes high.
The CS# must be kept to low during the whole Page Program cycle; The CS# must go high exactly at the byte
boundary( the latest eighth bit of data being latched in), otherwise the instruction will be rejected and will not be executed.
The self-timed Page Program Cycle time (tPP) is initiated as soon as Chip Select (CS#) goes high. The Write in
Progress (WIP) bit still can be checked while the Page Program cycle is in progress. The WIP sets during the tPP
timing, and clears when Page Program Cycle is completed, and the Write Enable Latch (WEL) bit is cleared. If the
Block is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect
Mode) the Page Program (PP) instruction will not be executed.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
P/N: PM1795
56
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 50. Page Program (PP) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31 32 33 34 35 36 37 38 39
SCLK
1
0
7
6
5
3
2
1
0
2079
2
2078
3
2077
23 22 21
02h
SI
Data Byte 1
24-Bit Address
2076
Command
2075
Mode 0
4
1
0
MSB
MSB
2074
40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55
2073
2072
CS#
SCLK
Data Byte 2
7
SI
6
5
4
3
2
Data Byte 3
1
MSB
0
7
6
5
4
3
2
Data Byte 256
1
7
0
MSB
6
5
4
3
2
MSB
Figure 51. Page Program (PP) Sequence (QPI Mode)
CS#
Mode 3
0
1
2
SCLK
Mode 0
Command
SIO[3:0]
02h
Data In
P/N: PM1795
24-Bit Address
A5
A4
A3
A2
A1
A0
H0
L0
H1
L1
H2
L2
H3
L3
Data Byte Data Byte Data Byte Data Byte
1
2
3
4
57
H255 L255
......
Data Byte
256
Rev. 1.6, July 22, 2016
MX25L12835F
9-24. 4 x I/O Page Program (4PP)
The Quad Page Program (4PP) instruction is for programming the memory to be "0". A Write Enable (WREN) instruction must be executed to set the Write Enable Latch (WEL) bit and Quad Enable (QE) bit must be set to "1" before sending the Quad Page Program (4PP). The Quad Page Programming takes four pins: SIO0, SIO1, SIO2, and
SIO3 as address and data input, which can improve programmer performance and the effectiveness of application.
The other function descriptions are as same as standard page program.
The sequence of issuing 4PP instruction is: CS# goes low→ sending 4PP instruction code→ 3-byte address on
SIO[3:0]→ at least 1-byte on data on SIO[3:0]→CS# goes high.
If the page is protected by BP bits (WPSEL=0; Block Protect Mode) or SPB/DPB (WPSEL=1; Advanced Sector Protect Mode), the Quad Page Program (4PP) instruction will not be executed.
Figure 52. 4 x I/O Page Program (4PP) Sequence (SPI Mode only)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21
SCLK
Mode 0
Data Data Data Data
Byte 1 Byte 2 Byte 3 Byte 4
6 Address cycle
A0
4
0
4
0
4
0
4
0
SIO1
A21 A17 A13 A9 A5 A1
5
1
5
1
5
1
5
1
SIO2
A22 A18 A14 A10 A6 A2
6
2
6
2
6
2
6
2
SIO3
A23 A19 A15 A11 A7 A3
7
3
7
3
7
3
7
3
SIO0
P/N: PM1795
Command
38h
A20 A16 A12 A8 A4
58
Rev. 1.6, July 22, 2016
MX25L12835F
9-25. Deep Power-down (DP)
The Deep Power-down (DP) instruction is for setting the device to minimum power consumption (the standby current is reduced from ISB1 to ISB2). The Deep Power-down mode requires the Deep Power-down (DP) instruction
to enter, during the Deep Power-down mode, the device is not active and all Write/Program/Erase instruction are
ignored. When CS# goes high, it's only in deep power-down mode not standby mode. It's different from Standby
mode.
The sequence of issuing DP instruction is: CS# goes low→sending DP instruction code→CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Once the DP instruction is set, all instruction will be ignored except the Release from Deep Power-down mode (RDP)
and Read Electronic Signature (RES) instruction and softreset command. (those instructions allow the ID being
reading out). When Power-down, or software reset command the deep power-down mode automatically stops, and
when power-up, the device automatically is in standby mode. For DP instruction the CS# must go high exactly at the
byte boundary (the latest eighth bit of instruction code been latched-in); otherwise, the instruction will not executed.
As soon as Chip Select (CS#) goes high, a delay of tDP is required before entering the Deep Power-down mode.
Figure 53. Deep Power-down (DP) Sequence (SPI Mode)
CS#
0
Mode 3
1
2
3
4
5
6
tDP
7
SCLK
Mode 0
Command
B9h
SI
Stand-by Mode
Deep Power-down Mode
Figure 54. Deep Power-down (DP) Sequence (QPI Mode)
CS#
Mode 3
0
1
tDP
SCLK
Mode 0
Command
SIO[3:0]
B9h
Stand-by Mode
P/N: PM1795
59
Deep Power-down Mode
Rev. 1.6, July 22, 2016
MX25L12835F
9-26. Enter Secured OTP (ENSO)
The ENSO instruction is for entering the additional 4K-bit secured OTP mode. While device is in 4K-bit secured
OTPmode, main array access is not available. The additional 4K-bit secured OTP is independent from main array
and may be used to store unique serial number for system identifier. After entering the Secured OTP mode, follow
standard read or program procedure to read out the data or update data. The Secured OTP data cannot be updated
again once it is lock-down.
The sequence of issuing ENSO instruction is: CS# goes low→ sending ENSO instruction to enter Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
Please note that after issuing ENSO command user can only access secure OTP region with standard read or program procedure. Furthermore, once security OTP is lock down, only read related commands are valid.
9-27. Exit Secured OTP (EXSO)
The EXSO instruction is for exiting the additional 4K-bit secured OTP mode.
The sequence of issuing EXSO instruction is: CS# goes low→ sending EXSO instruction to exit Secured OTP
mode→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-28. Read Security Register (RDSCUR)
The RDSCUR instruction is for reading the value of Security Register bits. The Read Security Register can be read
at any time (even in program/erase/write status register/write security register condition) and continuously.
The sequence of issuing RDSCUR instruction is : CS# goes low→sending RDSCUR instruction→Security Register
data out on SO→ CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-29. Write Security Register (WRSCUR)
The WRSCUR instruction is for changing the values of Security Register Bits. The WREN (Write Enable) instruction
is required before issuing WRSCUR instruction. The WRSCUR instruction may change the values of bit1 (LDSO
bit) for customer to lock-down the 4K-bit Secured OTP area. Once the LDSO bit is set to "1", the Secured OTP area
cannot be updated any more.
The sequence of issuing WRSCUR instruction is :CS# goes low→ sending WRSCUR instruction → CS# goes high.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
The CS# must go high exactly at the boundary; otherwise, the instruction will be rejected and not executed.
P/N: PM1795
60
Rev. 1.6, July 22, 2016
MX25L12835F
Security Register
The definition of the Security Register bits is as below:
Write Protection Selection bit. Please reference to Write Protection Selection
Erase Fail bit. The Erase Fail bit is a status flag, which shows the status of last Erase operation. It will be set to "1",
if the erase operation fails. It will be set to "0", if the last operation is success. Please note that it will not interrupt or
stop any operation in the flash memory.
Program Fail bit. The Program Fail bit is a status flag, which shows the status of last Program operation. It will be
set to "1", if the program operation fails or the program region is protected. It will be set to "0", if the last operation is
success. Please note that it will not interrupt or stop any operation in the flash memory.
Erase Suspend bit. Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use
ESB to identify the state of flash memory. After the flash memory is suspended by Erase Suspend command, ESB
is set to "1". ESB is cleared to "0" after erase operation resumes.
Program Suspend bit. Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may
use PSB to identify the state of flash memory. After the flash memory is suspended by Program Suspend command,
PSB is set to "1". PSB is cleared to "0" after program operation resumes.
Secured OTP Indicator bit. The Secured OTP indicator bit shows the chip is locked by factory or not. When it is
"0", it indicates non-factory lock; "1" indicates factory-lock.
Lock-down Secured OTP (LDSO) bit. By writing WRSCUR instruction, the LDSO bit may be set to "1" for cus­
tomer lock-down purpose. However, once the bit is set to "1" (lock-down), the LDSO bit and the 4K-bit Secured OTP
area cannot be updated any more. While it is in 4K-bit secured OTP mode, main array access is not allowed.
Table 9. Security Register Definition
bit7
bit6
bit5
bit4
WPSEL
E_FAIL
P_FAIL
Reserved
0=normal
WP mode
1=individual
mode
(default=0)
0=normal
Erase
succeed
1=indicate
Erase failed
(default=0)
0=normal
Program
succeed
1=indicate
Program
failed
(default=0)
-
0=Erase
is not
suspended
1= Erase
suspended
(default=0)
Non-volatile
bit (OTP)
Volatile bit
Volatile bit
Volatile bit
Volatile bit
P/N: PM1795
bit3
bit2
ESB
PSB
(Erase
(Program
Suspend bit) Suspend bit)
61
bit1
bit0
LDSO
Secured OTP
(indicate if
indicator bit
lock-down)
0 = not lock0=Program
down
0 = nonis not
1 = lock-down
factory
suspended
lock
(cannot
1= Program
1 = factory
program/
suspended
lock
erase
(default=0)
OTP)
Non-volatile
Non-volatile
Volatile bit
bit
bit (OTP)
(OTP)
Rev. 1.6, July 22, 2016
MX25L12835F
9-30. Write Protection Selection (WPSEL)
There are two write protection methods provided on this device, (1) Block Protection (BP) mode or (2) Advanced
Sector Protection mode. The protection modes are mutually exclusive. The WPSEL bit selects which protection
mode is enabled. If WPSEL=0 (factory default), BP mode is enabled and Advanced Sector Protection mode is disabled. If WPSEL=1, Advanced Sector Protection mode is enabled and BP mode is disabled. The WPSEL command
is used to set WPSEL=1. A WREN command must be executed to set the WEL bit before sending the WPSEL command. Please note that the WPSEL bit is an OTP bit. Once WPSEL is set to “1”, it cannot be programmed
back to “0”.
When WPSEL = 0: Block Protection (BP) mode,
The memory array is write protected by the BP3~BP0 bits.
When WPSEL =1: Advanced Sector Protection mode,
Blocks are individually protected by their own SPB or DPB. On power-up, all blocks are write protected by the Dynamic Protection Bits (DPB) by default. The Advanced Sector Protection instructions WRLR, RDLR, WRPASS, RDPASS, PASSULK, WRSPB, ESSPB, SPBLK, RDSPBLK, WRDPB, RDDPB, GBLK, and GBULK are activated. The
BP3~BP0 bits of the Status Register are disabled and have no effect. Hardware protection is performed by driving
WP#=0. Once WP#=0 all blocks and sectors are write protected regardless of the state of each SPB or DPB.
The sequence of issuing WPSEL instruction is: CS# goes low → send WPSEL instruction to enable the Advanced
Sector Protect mode → CS# goes high.
Write Protection Selection
Start
(Default in BP Mode)
WPSEL=1
Set
WPSEL Bit
Advance
Sector Protection
Set
Lock Register
WPSEL=0
Block Protection
(BP)
Bit 1 =0
Bit 2 =0
Password
Protection
P/N: PM1795
Solid
Protection
62
Dynamic
Protection
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 55. WPSEL Flow
start
WREN command
RDSCUR command
Yes
WPSEL=1?
No
WPSEL disable,
block protected by BP[3:0]
WPSEL command
RDSR command
WIP=0?
No
Yes
RDSCUR command
WPSEL=1?
No
Yes
WPSEL set successfully
WPSEL set fail
WPSEL enable.
Block protected by Advance Sector Protection
P/N: PM1795
63
Rev. 1.6, July 22, 2016
MX25L12835F
9-31. Advanced Sector Protection
Advanced Sector Protection can protect individual 4KB sectors in the bottom and top 64KB of memory and protect
individual 64KB blocks in the rest of memory.
There is one non-volatile Solid Protection Bit (SPB) and one volatile Dynamic Protection Bit (DPB) assigned to each
4KB sector at the bottom and top 64KB of memory and to each 64KB block in the rest of memory. A sector or block
is write-protected from programming or erasing when its associated SPB or DPB is set to “1”. The Unprotect Solid
Protect Bit (USPB) can temporarily override and disable the write-protection provided by the SPB bits.
There are two mutually exclusive implementations of Advanced Sector Protection: Solid Protection mode (factory
default) and Password Protection mode. Solid Protection mode permits the SPB bits to be modified after power-on
or a reset. The Password Protection mode requires a valid password before allowing the SPB bits to be modified.
The figure below is an overview of Advanced Sector Protection.
Figure 56. Advanced Sector Protection Overview
Start
Bit 1=0
Bit 2=0
Set
Lock Register ?
Solid Protection Mode
Password Protection Mode
Set 64 bit Password
Set
SPB Lock Bit ?
SPBLK = 0
SPB Lock bit locked
All SPB can not be changeable
SPBLK = 1
SPB Lock bit Unlocked
SPB is changeable
Dynamic Protect Bit Register
(DPB)
DPB=1 sector protect
Sector Array
DPB=0 sector unprotect
P/N: PM1795
SPB Access Register
(SPB)
Temporary Unprotect
SPB bit (USPB)
SPB=1 Write Protect
USPB=0 SPB bit is disabled
SPB=0 Write Unprotect
USPB=1 SPB bit is effective
DPB 0
SA 0
SPB 0
DPB 1
SA 1
SPB 1
DPB 2
SA 2
SPB 2
:
:
:
:
:
:
DPB N-1
SA N-1
SPB N-1
DPB N
SA N
SPB N
64
USPB
Rev. 1.6, July 22, 2016
MX25L12835F
9-31-1. Lock Register
The Lock Register is a 16-bit one-time programmable register. Lock Register bits [2:1] select between Solid
Protection mode and Password Protection mode. When both bits are “1” (factory default), Solid Protection mode
is enabled by default. The Lock Register is programmed using the WRLR (Write Lock Register) command.
Programming Lock Register bit 1 to “0” permanently selects Solid Protection mode and permanently disables
Password Protection mode. Conversely, programming bit 2 to “0” permanently selects Password Protection mode
and permanently disables Solid Protection mode. Bits 1 and 2 cannot be programmed to “0” at the same time
otherwise the device will abort the operation. A WREN command must be executed to set the WEL bit before
sending the WRLR command.
A password must be set prior to selecting Password Protection mode. The password can be set by issuing the
WRPASS command.
Lock Register
Bit 15-3
Reserved
Bit 2
Bit 1
Bit0
Password Protection Mode Lock Bit
Solid Protection Mode Lock Bit
Reserved
0=Password Protection Mode Enable
0=Solid Protection Mode Enable
x
1= Password Protection Mode not
x
1= Solid Protection Mode not enable (Default =1)
enable (Default =1)
OTP
OTP
OTP
OTP
Note: Once bit 2 or bit 1 has been programmed to "0", the other bit can't be changed any more. Attempts to clear
more than one bit in the Lock Register will set the Security Register P_FAIL flag to "1".
Figure 57. Read Lock Register (RDLR) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
2Dh
SI
Register Out
High-Z
SO
7
6
5
4
3
2
Register Out
1
0 15 14 13 12 11 10 9
8
7
MSB
MSB
Figure 58. Write Lock Register (WRLR) Sequence (SPI Mode)
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15 16 17 18 19 20 21 22 23
SCLK
Mode 0
SI
SO
P/N: PM1795
Command
2Ch
High-Z
Lock Register In
7
6
5
4
3
2
1
0 15 14 13 12 11 10 9
8
MSB
65
Rev. 1.6, July 22, 2016
MX25L12835F
9-31-2. SPB Lock Bit (SPBLK)
The SPB Lock Bit (SPBLK) is a volatile bit located in bit 0 of the SPB Lock Register. The SPBLK bit controls whether
the SPB bits can be modified or not. If SPBLK=1, the SPB bits are unprotected and can be modified. If SPBLK=0,
the SPB bits are protected (“locked”) and cannot be modified. The power-on and reset status of the SPBLK bit is
determined by Lock Register bits [2:1]. Refer to SPB Lock Register for SPBLK bit default power-on status. The
RDSPBLK command can be used to read the SPB Lock Register to determine the state of the SPBLK bit.
In Solid Protection mode, the SPBLK bit defaults to “1” after power-on or reset. When SPBLK=1, the SPB bits are
unprotected (“unlocked”) and can be modified. The SPB Lock Bit Set command can be used to write the SPBLK bit to “0”
and protect the SPB bits. A WREN command must be executed to set the WEL bit before sending the SPB Lock Bit
Set command. Once the SPBLK has been written to “0”, there is no command (except a software reset) to set the
bit back to “1”. A power-on cycle or reset is required to set the SPB lock bit back to “1”.
In Password Protection mode, the SPBLK bit defaults to “0” after power-on or reset. A valid password must
be provided to set the SPBLK bit to “1” to allow the SPBs to be modified. After the SPBs have been set to the
desired status, use the SPB Lock Bit Set command to clear the SPBLK bit back to “0” in order to prevent further
modification.
SPB Lock Register
Bit
7-1
Description
Reserved
0
SPBLK (SPB Lock Bit)
Bit Status
X
0 = SPBs protected
1= SPBs unprotected
Default
0000000
Solid Protection Mode: 1
Password Protection Mode: 0
Type
Volatile
Volatile
Figure 59. SPB Lock Bit Set (SPBLK) Sequence
CS#
0
Mode 3
1
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
A6h
High-Z
SO
Figure 60. Read SPB Lock Register (RDSPBLK) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
SCLK
Mode 0
command
A7h
SI
SO
High-Z
Register Out
7
6
5
4
2
1
0
7
6
5
4
3
2
1
0
7
MSB
MSB
P/N: PM1795
3
Register Out
66
Rev. 1.6, July 22, 2016
MX25L12835F
9-31-3. Solid Protection Bits
The Solid Protection Bits (SPBs) are nonvolatile bits for enabling or disabling write-protection to sectors and blocks.
The SPB bits have the same endurance as the Flash memory. An SPB is assigned to each 4KB sector in the bottom
and top 64KB of memory and to each 64KB block in the remaining memory. The factory default state of the SPB bits is “0”,
which has the sector/block write-protection disabled.
When an SPB is set to “1”, the associated sector or block is write-protected. Program and erase operations on the
sector or block will be inhibited. SPBs can be individually set to “1” by the WRSPB command. However, the SPBs
cannot be individually cleared to “0”. Issuing the ESSPB command clears all SPBs to “0”. A WREN command must
be executed to set the WEL bit before sending the WRSPB or ESSPB command.
The SPBLK bit must be “1” before any SPB can be modified. In Solid Protection mode the SPBLK bit defaults to
“1” after power-on or reset. Under Password Protection mode, the SPBLK bit defaults to “0” after power-on or reset,
and a PASSULK command with a correct password is required to set the SPBLK bit to “1”.
The SPB Lock Bit Set command clears the SPBLK bit to “0”, locking the SPB bits from further modification.
The RDSPB command reads the status of the SPB of a sector or block. The RDSPB command returns 00h if the
SPB is “0”, indicating write-protection is disabled. The RDSPB command returns FFh if the SPB is “1”, indicating
write-protection is enabled.
In Solid Protection mode, the Unprotect Solid Protect Bit (USPB) can temporarily mask the SPB bits and disable the
write-protection provided by the SPB bits.
Note: If SPBLK=0, commands to set or clear the SPB bits will be ignored.
SPB Register
Bit
Description
7 to 0 SPB (Solid Protection Bit)
P/N: PM1795
Bit Status
00h = Unprotect Sector / Block
FFh = Protect Sector / Block
67
Default
Type
00h
Non-volatile
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 61. Read SPB Status (RDSPB) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
37 38 39 40 41 42 43 44 45 46 47
9
SCLK
Mode 0
Command
SI
32-Bit Address
(Note)
E2h
A31 A30
A2 A1 A0
MSB
Data Out
High-Z
SO
7
6
5
4
3
2
1
0
MSB
Note: A31-A24 are don't care.
Figure 62. SPB Erase (ESSPB) Sequence
CS#
1
0
Mode 3
2
3
4
5
6
7
SCLK
Mode 0
Command
SI
E4h
High-Z
SO
Figure 63. SPB Program (WRSPB) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
9
37 38 39
SCLK
Mode 0
SI
Command
32-Bit Address
(Note)
E3h
A31 A30
A2 A1 A0
MSB
Note: A31-A24 are don't care.
P/N: PM1795
68
Rev. 1.6, July 22, 2016
MX25L12835F
9-31-4. Dynamic Protection Bits
The Dynamic Protection Bits (DPBs) are volatile bits for quickly and easily enabling or disabling write-protection
to sectors and blocks. A DPB is assigned to each 4KB sector in the bottom and top 64KB of memory and to each
64KB block in the rest of the memory. The DBPs can enable write-protection on a sector or block regardless of the
state of the corresponding SPB. However, the DPB bits can only unprotect sectors or blocks whose SPB bits are “0”
(unprotected).
When a DPB is “1”, the associated sector or block will be write-protected, preventing any program or erase
operation on the sector or block. All DPBs default to “1” after power-on or reset. When a DPB is cleared to “0”, the
associated sector or block will be unprotected if the corresponding SPB is also “0”.
DPB bits can be individually set to “1” or “0” by the WRDPB command. The DBP bits can also be globally cleared to
“0” with the GBULK command or globally set to “1” with the GBLK command. A WREN command must be executed
to set the WEL bit before sending the WRDPB, GBULK, or GBLK command.
The RDDPB command reads the status of the DPB of a sector or block. The RDDPB command returns 00h if the
DPB is “0”, indicating write-protection is disabled. The RDDPB command returns FFh if the DPB is “1”, indicating
write-protection is enabled.
DPB Register
Bit
Description
Bit Status
00h = Unprotect Sector / Block
FFh = Protect Sector / Block
7 to 0 DPB (Dynamic Protection Bit)
Default
Type
FFh
Volatile
Figure 64. Read DPB Register (RDDPB) Sequence
CS#
0
Mode 3
1
2
3
4
5
6
7
8
37 38 39 40 41 42 43 44 45 46 47
9
SCLK
Mode 0
Command
SI
32-Bit Address
(Note)
E0h
A31 A30
A2
A1
A0
MSB
Data Out
High-Z
SO
7
6
5
4
3
2
1
0
MSB
Note: A31-A24 are don't care.
Figure 65. Write DPB Register (WRDPB) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
37 38 39 40 41 42 43 44 45 46 47
9
SCLK
Mode 0
SI
Command
E1h
Data Byte 1
32-Bit Address
(Note)
A31 A30
A2 A1 A0
MSB
7
6
5
4
3
2
1
0
MSB
Note: A31-A24 are don't care.
P/N: PM1795
69
Rev. 1.6, July 22, 2016
MX25L12835F
9-31-5. Unprotect Solid Protect Bit (USPB)
The Unprotect Solid Protect Bit is a volatile bit that defaults to “1” after power-on or reset. When USPB=1, the SPBs
have their normal function. When USPB=0 all SPBs are masked and their write-protected sectors and blocks are
temporarily unprotected (as long as their corresponding DPBs are “0“). The USPB provides a means to temporarily
override the SPBs without having to issue the ESSPB and WRSPB commands to clear and set the SPBs. The
USPB can be set or cleared as often as needed.
Please refer to 9-31-7. Sector Protection States Summary Table for the sector state with the protection status of
DPB/SPB/USPB bits.
9-31-6. Gang Block Lock/Unlock (GBLK/GBULK)
These instructions are only effective if WPSEL=1. The GBLK and GBULK instructions provide a quick method to set
or clear all DPB bits at once.
The WREN (Write Enable) instruction is required before issuing the GBLK/GBULK instruction.
The sequence of issuing GBLK/GBULK instruction is: CS# goes low → send GBLK/GBULK (7Eh/98h) instruction
→CS# goes high.
The GBLK and GBULK commands are accepted in both SPI and QPI mode.
The CS# must go high exactly at the byte boundary, otherwise, the instruction will be rejected and not be executed.
9-31-7. Sector Protection States Summary Table
Protection Status
DPB
SPB
USPB
Sector/Block
Protection State
0
0
0
0
1
1
1
1
0
0
1
1
0
0
1
1
0
1
0
1
0
1
0
1
Unprotected
Unprotected
Unprotected
Protected
Protected
Protected
Protected
Protected
P/N: PM1795
70
Rev. 1.6, July 22, 2016
MX25L12835F
9-32. Password Protection Mode
Password Protection mode potentially provides a higher level of security than Solid Protection mode. In Password
Protection mode, the SPBLK bit defaults to “0” after a power-on cycle or reset. When SPBLK=0, the SPBs are
locked and cannot be modified. A 64-bit password must be provided to unlock the SPBs.
The PASSULK command with the correct password will set the SPBLK bit to “1” and unlock the SPB bits. After the
correct password is given, a wait of 2us is necessary for the SPB bits to unlock. The Status Register WIP bit will
clear to “0” upon completion of the PASSULK command. Once unlocked, the SPB bits can be modified. A WREN
command must be executed to set the WEL bit before sending the PASSULK command.
Several steps are required to place the device in Password Protection mode. Prior to entering the Password
Protection mode, it is necessary to set the 64-bit password and verify it. The WRPASS command writes the
password and the RDPASS command reads back the password. Password verification is permitted until the
Password Protection Mode Lock Bit has been written to “0”. Password Protection mode is activated by programming
the Password Protection Mode Lock Bit to “0”. This operation is not reversible. Once the bit is programmed, it
cannot be erased. The device remains permanently in Password Protection mode and the 64-bit password can
neither be retrieved nor reprogrammed..
The password is all “1’s” when shipped from the factory. The WRPASS command can only program password bits to “0”.
The WRPASS command cannot program “0’s” back to “1’s”. All 64-bit password combinations are valid password
options. A WREN command must be executed to set the WEL bit before sending the WRPASS command.
● The unlock operation will fail if the password provided by the PASSULK command does not match the stored
password. This will set the P_FAIL bit to “1” and insert a 100us ± 20us delay before clearing the WIP bit to “0”.
● The PASSULK command is prohibited from being executed faster than once every 100us ± 20us. This restriction
makes it impractical to attempt all combinations of a 64-bit password (such an effort would take ~58 million
years). Monitor the WIP bit to determine whether the device has completed the PASSULK command.
● When a valid password is provided, the PASSULK command does not insert the 100us delay before returning
the WIP bit to zero. The SPBLK bit will set to “1” and the P_FAIL bit will be “0”.
● It is not possible to set the SPBLK bit to “1” if the password had not been set prior to the Password Protection
mode being selected.
Password Register (PASS)
Bits
Field
Function Type
Name
63 to 0 PWD
P/N: PM1795
Description
Default State
Non-volatile OTP storage of 64 bit password. The
Hidden
password is no longer readable after the Password
OTP FFFFFFFFFFFFFFFFh
Password
Protection mode is selected by programming Lock
Register bit 2 to zero.
71
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 66. Read Password Register (RDPASS) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
69 70 71 72 73
9
SCLK
Mode 0
Command
SI
27h
Data Out 1
High-Z
SO
7
Data Out 2
6
58 57 56 7
6
MSB
MSB
Figure 67. Write Password Register (WRPASS) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
69 70 71
9
SCLK
Mode 0
Command
SI
Password
7
28h
6
58 57 56
9
69 70 71
MSB
SO
High-Z
Figure 68. Password Unlock (PASSULK) Sequence
CS#
Mode 3
0
1
2
3
4
5
6
7
8
SCLK
Mode 0
SI
Command
Password
7
29h
6
58 57 56
MSB
SO
P/N: PM1795
High-Z
72
Rev. 1.6, July 22, 2016
MX25L12835F
9-33. Program/Erase Suspend/Resume
The device allow the interruption of Sector-Erase, Block-Erase or Page-Program operations and conduct other
operations.
After issue suspend command, the system can determine if the device has entered the Erase-Suspended mode
through Bit2 (PSB) and Bit3 (ESB) of security register. (please refer to Table 9. Security Register Definition)
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
9-34. Erase Suspend
Erase suspend allow the interruption of all erase operations. After the device has entered Erase-Suspended mode,
the system can read any sector(s) or Block(s) except those being erased by the suspended erase operation.
Reading the sector or Block being erase suspended is invalid.
After erase suspend, WEL bit will be clear, only read related, resume and reset command can be accepted. (including:
03h, 0Bh, 3Bh, 6Bh, BBh, EBh, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h, 66h, 99h,
00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
If the system issues an Erase Suspend command after the sector erase operation has already begun, the device
will not enter Erase-Suspended mode until tESL time has elapsed.
Erase Suspend Bit (ESB) indicates the status of Erase Suspend operation. Users may use ESB to identify the state
of flash memory. After the flash memory is suspended by Erase Suspend command, ESB is set to "1". ESB is
cleared to "0" after erase operation resumes.
9-35. Program Suspend
Program suspend allows the interruption of all program operations. After the device has entered ProgramSuspended mode, the system can read any sector(s) or Block(s) except those be­ing programmed by the suspended
program operation. Reading the sector or Block being program suspended is invalid.
After program suspend, WEL bit will be cleared, only read related, resume and reset command can be accepted.
(including: 03h, 0Bh, 3Bh, 6Bh, BBh, EBh, 5Ah, C0h, 06h, 04h, 2Bh, 9Fh, AFh, 05h, ABh, 90h, B1h, C1h, B0h, 30h,
66h, 99h, 00h, 35h, F5h, 15h, 2Dh, 27h, A7h, E2h, E0h, 16h)
Program Suspend Bit (PSB) indicates the status of Program Suspend operation. Users may use PSB to identify the
state of flash memory. After the flash memory is suspended by Program Suspend command, PSB is set to "1". PSB
is cleared to "0" after program operation resumes.
P/N: PM1795
73
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 69. Suspend to Read Latency
tPSL / tESL
CS#
Suspend Command
Read Command
tPSL: Program Latency
tESL: Erase Latency
Figure 70. Resume to Read Latency
tSE / tBE / tPP
CS#
Resume Command
Read Command
Figure 71. Resume to Suspend Latency
tPRS / tERS
CS#
Resume Command
Suspend Command
tPRS: Program Resume to another Suspend
tERS: Erase Resume to another Suspend
P/N: PM1795
74
Rev. 1.6, July 22, 2016
MX25L12835F
9-36. Write-Resume
The Write operation is being resumed when Write-Resume instruction issued. ESB or PSB (suspend status bit) in
Status register will be changed back to “0”.
The operation of Write-Resume is as follows: CS# drives low → send write resume command cycle (30H) → drive
CS# high. By polling Busy Bit in status register, the internal write operation status could be checked to be completed
or not. The user may also wait the time lag of tSE, tBE, tPP for Sector-erase, Block-erase or Page-programming.
WREN (command "06") is not required to issue before resume. Resume to another suspend operation requires
latency time of 1ms.
Please note that, if "performance enhance mode" is executed during suspend operation, the device can not
be resumed. To restart the write command, disable the "performance enhance mode" is required. After the
"performance enhance mode" is disabled, the write-resume command is effective.
9-37. No Operation (NOP)
The “No Operation” command is only able to terminate the Reset Enable (RSTEN) command and will not affect any
other command.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
during SPI mode.
9-38. Software Reset (Reset-Enable (RSTEN) and Reset (RST))
The Software Reset operation combines two instructions: Reset-Enable (RSTEN) command following a Reset (RST)
command. It returns the device to a standby mode. All the volatile bits and settings will be cleared then, which
makes the device return to the default status as power on.
To execute Reset command (RST), the Reset-Enable (RSTEN) command must be executed first to perform the
Reset operation. If there is any other command to interrupt after the Reset-Enable command, the Reset-Enable will
be invalid.
Both SPI (8 clocks) and QPI (2 clocks) command cycle can accept by this instruction. The SIO[3:1] are don't care
when during SPI mode.
If the Reset command is executed during program or erase operation, the operation will be disabled, the data under
processing could be damaged or lost.
The reset time is different depending on the last operation. For details, please refer to Table 14. Reset Timing(Other Operation) for tREADY2.
P/N: PM1795
75
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 72. Software Reset Recovery
Stand-by Mode
66
CS#
99
tREADY2
Mode
Note: Refer to Table 14. Reset Timing-(Other Operation) for tREADY2.
Figure 73. Reset Sequence (SPI mode)
tSHSL
CS#
SCLK
Mode 3
Mode 3
Mode 0
Mode 0
Command
Command
99h
66h
SIO0
Figure 74. Reset Sequence (QPI mode)
tSHSL
CS#
MODE 3
MODE 3
MODE 3
SCLK
MODE 0
SIO[3:0]
P/N: PM1795
Command
MODE 0
66h
Command
MODE 0
99h
76
Rev. 1.6, July 22, 2016
MX25L12835F
9-39. Read SFDP Mode (RDSFDP)
The Serial Flash Discoverable Parameter (SFDP) standard provides a consistent method of describing the functional
and feature capabilities of serial flash devices in a standard set of internal parameter tables. These parameter tables
can be interrogated by host system software to enable adjustments needed to accommodate divergent features
from multiple vendors. The concept is similar to the one found in the Introduction of JEDEC Standard, JESD68 on
CFI.
The sequence of issuing RDSFDP instruction is CS# goes low→send RDSFDP instruction (5Ah)→send 3 address
bytes on SI pin→send 1 dummy byte on SI pin→read SFDP code on SO→to end RDSFDP operation can use CS#
to high at any time during data out.
SFDP is a JEDEC Standard, JESD216.
Figure 75. Read Serial Flash Discoverable Parameter (RDSFDP) Sequence
CS#
0
1
2
3
4
5
6
7
8
9 10
28 29 30 31
SCLK
Command
SI
SO
24 BIT ADDRESS
23 22 21
5Ah
3
2
1
0
High-Z
CS#
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47
SCLK
Dummy Cycle
SI
7
6
5
4
3
2
1
0
DATA OUT 2
DATA OUT 1
SO
7
6
5
3
2
1
0
7
MSB
MSB
P/N: PM1795
4
77
6
5
4
3
2
1
0
7
MSB
Rev. 1.6, July 22, 2016
MX25L12835F
Table 10. Signature and Parameter Identification Data Values
SFDP Table below is for MX25L12835FM2I-10G, MX25L12835FMI-10G, MX25L12835FZ2I-10G and
MX25L12835FZNI-10G
Description
SFDP Signature
Comment
Fixed: 50444653h
Add (h) DW Add Data (h/b) Data
(Byte)
(Bit)
(Note1)
(h)
00h
07:00
53h
53h
01h
15:08
46h
46h
02h
23:16
44h
44h
03h
31:24
50h
50h
SFDP Minor Revision Number
Start from 00h
04h
07:00
00h
00h
SFDP Major Revision Number
Start from 01h
This number is 0-based. Therefore,
0 indicates 1 parameter header.
05h
15:08
01h
01h
06h
23:16
01h
01h
07h
31:24
FFh
FFh
00h: it indicates a JEDEC specified
header.
08h
07:00
00h
00h
Number of Parameter Headers
Unused
ID number (JEDEC)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Start from 00h
09h
15:08
00h
00h
Start from 01h
0Ah
23:16
01h
01h
How many DWORDs in the
Parameter table
0Bh
31:24
09h
09h
0Ch
07:00
30h
30h
Parameter Table Pointer (PTP)
First address of JEDEC Flash
Parameter table
0Dh
15:08
00h
00h
0Eh
23:16
00h
00h
0Fh
31:24
FFh
FFh
it indicates Macronix manufacturer
ID
10h
07:00
C2h
C2h
Start from 00h
11h
15:08
00h
00h
Start from 01h
12h
23:16
01h
01h
How many DWORDs in the
Parameter table
13h
31:24
04h
04h
14h
07:00
60h
60h
15h
15:08
00h
00h
16h
23:16
00h
00h
17h
31:24
FFh
FFh
Unused
ID number
(Macronix manufacturer ID)
Parameter Table Minor Revision
Number
Parameter Table Major Revision
Number
Parameter Table Length
(in double word)
Parameter Table Pointer (PTP)
First address of Macronix Flash
Parameter table
Unused
P/N: PM1795
78
Rev. 1.6, July 22, 2016
MX25L12835F
Table 11. Parameter Table (0): JEDEC Flash Parameter Tables
SFDP Table below is for MX25L12835FM2I-10G, MX25L12835FMI-10G, MX25L12835FZ2I-10G and
MX25L12835FZNI-10G
Description
Comment
Block/Sector Erase sizes
00: Reserved, 01: 4KB erase,
10: Reserved,
11: not support 4KB erase
Write Granularity
0: 1Byte, 1: 64Byte or larger
Write Enable Instruction Required 0: not required
1: required 00h to be written to the
for Writing to Volatile Status
status register
Registers
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
31h
(1-1-2) Fast Read (Note2)
0=not support 1=support
Address Bytes Number used in
addressing flash array
Double Transfer Rate (DTR)
Clocking
00: 3Byte only, 01: 3 or 4Byte,
10: 4Byte only, 11: Reserved
01b
02
1b
03
0b
30h
0: use 50h opcode,
1: use 06h opcode
Write Enable Opcode Select for
Note: If target flash status register is
Writing to Volatile Status Registers
nonvolatile, then bits 3 and 4 must
be set to 00b.
Contains 111b and can never be
Unused
changed
4KB Erase Opcode
01:00
0=not support 1=support
32h
Data
(h)
E5h
04
0b
07:05
111b
15:08
20h
16
1b
18:17
00b
19
0b
20
1b
20h
F1h
(1-2-2) Fast Read
0=not support 1=support
(1-4-4) Fast Read
0=not support 1=support
21
1b
(1-1-4) Fast Read
0=not support 1=support
22
1b
23
1b
33h
31:24
FFh
37h:34h
31:00
07FF FFFFh
Unused
Unused
Flash Memory Density
(1-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states (Note3)
Clocks) not support
(1-4-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits (Note4)
38h
(1-4-4) Fast Read Opcode
39h
(1-1-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits
3Ah
(1-1-4) Fast Read Opcode
3Bh
P/N: PM1795
79
04:00
0 0100b
07:05
010b
15:08
EBh
20:16
0 1000b
23:21
000b
31:24
6Bh
FFh
44h
EBh
08h
6Bh
Rev. 1.6, July 22, 2016
MX25L12835F
SFDP Table below is for MX25L12835FM2I-10G, MX25L12835FMI-10G, MX25L12835FZ2I-10G and
MX25L12835FZNI-10G
Description
Comment
(1-1-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-1-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
3Ch
(1-1-2) Fast Read Opcode
3Dh
(1-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(1-2-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
3Eh
(1-2-2) Fast Read Opcode
3Fh
(2-2-2) Fast Read
0=not support 1=support
Unused
(4-4-4) Fast Read
0=not support 1=support
40h
Unused
04:00
0 1000b
07:05
000b
15:08
3Bh
20:16
0 0100b
23:21
000b
31:24
BBh
00
0b
03:01
111b
04
1b
07:05
111b
Data
(h)
08h
3Bh
04h
BBh
FEh
Unused
43h:41h
31:08
FFh
FFh
Unused
45h:44h
15:00
FFh
FFh
20:16
0 0000b
23:21
000b
(2-2-2) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(2-2-2) Fast Read Number of
000b: Mode Bits not support
Mode Bits
46h
(2-2-2) Fast Read Opcode
47h
31:24
FFh
FFh
49h:48h
15:00
FFh
FFh
20:16
0 0100b
23:21
010b
Unused
00h
(4-4-4) Fast Read Number of Wait 0 0000b: Wait states (Dummy
states
Clocks) not support
(4-4-4) Fast Read Number of
000b: Mode Bits not support
Mode Bits
4Ah
(4-4-4) Fast Read Opcode
4Bh
31:24
EBh
EBh
4Ch
07:00
0Ch
0Ch
4Dh
15:08
20h
20h
4Eh
23:16
0Fh
0Fh
4Fh
31:24
52h
52h
50h
07:00
10h
10h
51h
15:08
D8h
D8h
52h
23:16
00h
00h
53h
31:24
FFh
FFh
Sector Type 1 Size
Sector/block size = 2^N bytes (Note5)
0x00b: this sector type doesn't exist
Sector Type 1 erase Opcode
Sector Type 2 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 2 erase Opcode
Sector Type 3 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 3 erase Opcode
Sector Type 4 Size
Sector/block size = 2^N bytes
0x00b: this sector type doesn't exist
Sector Type 4 erase Opcode
P/N: PM1795
80
44h
Rev. 1.6, July 22, 2016
MX25L12835F
Table 12. Parameter Table (1): Macronix Flash Parameter Tables
SFDP Table below is for MX25L12835FM2I-10G, MX25L12835FMI-10G, MX25L12835FZ2I-10G and
MX25L12835FZNI-10G
Description
Vcc Supply Maximum Voltage
Vcc Supply Minimum Voltage
Add (h) DW Add Data (h/b)
(Byte)
(Bit)
(Note1)
Comment
2000h=2.000V
2700h=2.700V
3600h=3.600V
1750h=1.750V
1650h=1.650V
2250h=2.250V
2350h=2.350V
2700h=2.700V
Data
(h)
61h:60h
07:00
15:08
00h
36h
00h
36h
63h:62h
23:16
31:24
00h
27h
00h
27h
H/W Reset# pin
0=not support 1=support
00
1b
H/W Hold# pin
0=not support 1=support
01
0b
Deep Power Down Mode
0=not support 1=support
02
1b
S/W Reset
0=not support 1=support
03
1b
S/W Reset Opcode
Reset Enable (66h) should be
issued before Reset Opcode
Program Suspend/Resume
0=not support 1=support
12
1b
Erase Suspend/Resume
0=not support 1=support
13
1b
14
1b
15
1b
66h
23:16
C0h
C0h
67h
31:24
64h
64h
65h:64h
Unused
Wrap-Around Read mode
0=not support 1=support
Wrap-Around Read mode Opcode
11:04
1001 1001b
F99Dh
(99h)
Wrap-Around Read data length
08h:support 8B wrap-around read
16h:8B&16B
32h:8B&16B&32B
64h:8B&16B&32B&64B
Individual block lock
0=not support 1=support
00
1b
Individual block lock bit
(Volatile/Nonvolatile)
0=Volatile 1=Nonvolatile
01
0b
09:02
1110 0001b
(E1h)
10
0b
11
1b
Individual block lock Opcode
Individual block lock Volatile
protect bit default protect status
0=protect 1=unprotect
Secured OTP
0=not support 1=support
Read Lock
0=not support 1=support
12
0b
Permanent Lock
0=not support 1=support
13
0b
Unused
15:14
11b
Unused
31:16
FFh
FFh
31:00
FFh
FFh
Unused
6Bh:68h
6Fh:6Ch
CB85h
MX25L12835FM2I-10G-SFDP_2014-09-24
P/N: PM1795
81
Rev. 1.6, July 22, 2016
MX25L12835F
Note 1: h/b is hexadecimal or binary.
Note 2: (x-y-z) means I/O mode nomenclature used to indicate the number of active pins used for the opcode (x),
address (y), and data (z). At the present time, the only valid Read SFDP instruction modes are: (1-1-1), (2-2-2),
and (4-4-4)
Note 3: Wait States is required dummy clock cycles after the address bits or optional mode bits.
Note 4: Mode Bits is optional control bits that follow the address bits. These bits are driven by the system controller
if they are specified. (eg,read performance enhance toggling bits)
Note 5: 4KB=2^0Ch,32KB=2^0Fh,64KB=2^10h
Note 6: All unused and undefined area data is blank FFh for SFDP Tables that are defined in Parameter
Identification Header. All other areas beyond defined SFDP Table are reserved by Macronix.
P/N: PM1795
82
Rev. 1.6, July 22, 2016
MX25L12835F
10. RESET
Driving the RESET# pin low for a period of tRLRH or longer will reset the device. After reset cycle, the device is at
the following states:
- Standby mode
- All the volatile bits such as WEL/WIP/SRAM lock bit will return to the default status as power on.
- 3-byte address mode
If the device is under programming or erasing, driving the RESET# pin low will also terminate the operation and data
could be lost. During the resetting cycle, the SO data becomes high impedance and the current will be reduced to
minimum.
Figure 76. RESET Timing
CS#
tRHSL
SCLK
tRH tRS
RESET#
tRLRH
tREADY1 / tREADY2
Table 13. Reset Timing-(Power On)
Symbol Parameter
tRHSL Reset# high before CS# low
tRS
Reset# setup time
tRH
Reset# hold time
tRLRH Reset# low pulse width
tREADY1 Reset Recovery time
Min.
10
15
15
10
35
Typ.
Max.
Unit
us
ns
ns
us
us
Min.
10
15
15
10
40
35
310
12
25
100
40
Typ.
Max.
Unit
us
ns
ns
us
us
us
us
ms
ms
ms
ms
Table 14. Reset Timing-(Other Operation)
Symbol
tRHSL
tRS
tRH
tRLRH
Parameter
Reset# high before CS# low
Reset# setup time
Reset# hold time
Reset# low pulse width
Reset Recovery time (During instruction decoding)
Reset Recovery time (for read operation)
Reset Recovery time (for program operation)
tREADY2 Reset Recovery time(for SE4KB operation)
Reset Recovery time (for BE64K/BE32KB operation)
Reset Recovery time (for Chip Erase operation)
Reset Recovery time (for WRSR operation)
P/N: PM1795
83
Rev. 1.6, July 22, 2016
MX25L12835F
11. POWER-ON STATE
The device is at below states when power-up:
- Standby mode (please note it is not deep power-down mode)
- Write Enable Latch (WEL) bit is reset
The device must not be selected during power-up and power-down stage unless the VCC achieves below correct
level:
- VCC minimum at power-up stage and then after a delay of tVSL
- GND at power-down
Please note that a pull-up resistor on CS# may ensure a safe and proper power-up/down level.
An internal power-on reset (POR) circuit may protect the device from data corruption and inadvertent data change
during power up state. When VCC is lower than VWI (POR threshold voltage value), the internal logic is reset and
the flash device has no response to any command.
For further protection on the device, if the VCC does not reach the VCC minimum level, the correct operation is not
guaranteed. The read, write, erase, and program command should be sent after the below time delay:
- tVSL after VCC reached VCC minimum level
Please refer to the Figure 83. Power-up Timing.
Note:
- To stabilize the VCC level, the VCC rail decoupled by a suitable capacitor close to package pins is recommended. (generally around 0.1uF)
- At power-down stage, the VCC drops below VWI level, all operations are disable and device has no response
to any command. The data corruption might occur during the stage while a write, program, erase cycle is in
progress.
P/N: PM1795
84
Rev. 1.6, July 22, 2016
MX25L12835F
12. ELECTRICAL SPECIFICATIONS
Table 15. ABSOLUTE MAXIMUM RATINGS
RATING
VALUE
Ambient Operating Temperature
Industrial grade
-40°C to 85°C
Storage Temperature
-65°C to 150°C
Applied Input Voltage
-0.5V to VCC+0.5V
Applied Output Voltage
-0.5V to VCC+0.5V
VCC to Ground Potential
-0.5V to 4.0V
NOTICE:
1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage
to the device. This is stress rating only and functional operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended period may affect reliability.
2. Specifications contained within the following tables are subject to change.
3. During voltage transitions, all pins may overshoot Vss to -2.0V and Vcc to +2.0V for periods up to 20ns, see
Figure 77 and Figure 78.
Figure 78. Maximum Positive Overshoot Waveform
Figure 77. Maximum Negative Overshoot Waveform
20ns
20ns
20ns
Vss
Vcc + 2.0V
Vss-2.0V
Vcc
20ns
20ns
20ns
Table 16. CAPACITANCE TA = 25°C, f = 1.0 MHz
Symbol Parameter
CIN
COUT
P/N: PM1795
Min.
Typ.
Max.
Unit
Input Capacitance
6
pF
VIN = 0V
Output Capacitance
8
pF
VOUT = 0V
85
Conditions
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 79. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL
Input timing reference level
0.8VCC
Output timing reference level
0.7VCC
AC
Measurement
Level
0.8V
0.2VCC
0.5VCC
Note: Input pulse rise and fall time are <5ns
Figure 80. OUTPUT LOADING
25K ohm
DEVICE UNDER
TEST
CL
+3.0V
25K ohm
CL=30pF Including jig capacitance
P/N: PM1795
86
Rev. 1.6, July 22, 2016
MX25L12835F
Table 17. DC CHARACTERISTICS
(Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V)
Symbol Parameter
Notes
Min.
Typ.
Max.
Units Test Conditions
ILI
Input Load Current
1
±2
uA
VCC = VCC Max,
VIN = VCC or GND
ILO
Output Leakage Current
1
±2
uA
VCC = VCC Max,
VOUT = VCC or GND
ISB1
VCC Standby Current
1
10
50
uA
VIN = VCC or GND,
CS# = VCC
ISB2
Deep Power-down
Current
2
20
uA
VIN = VCC or GND,
CS# = VCC
25
mA
f=133MHz, (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
20
mA
f=104MHz, (4 x I/O read)
SCLK=0.1VCC/0.9VCC,
SO=Open
15
mA
f=84MHz,
SCLK=0.1VCC/0.9VCC,
SO=Open
14
20
mA
10
12
mA
1
14
25
mA
Erase in Progress,
CS#=VCC
1
14
25
mA
Erase in Progress,
CS#=VCC
-0.5
0.8
V
0.7VCC
VCC+0.4
V
0.2
V
IOL = 100uA
V
IOH = -100uA
ICC1
VCC Read
VIL
VCC Program Current
(PP)
VCC Write Status
Register (WRSR) Current
VCC Sector/Block (32K,
64K) Erase Current
(SE/BE/BE32K)
VCC Chip Erase Current
(CE)
Input Low Voltage
VIH
Input High Voltage
VOL
Output Low Voltage
VOH
Output High Voltage
ICC2
ICC3
ICC4
ICC5
1
14
1
VCC-0.2
Program in Progress,
CS# = VCC
Program status register in
progress, CS#=VCC
Notes :
1. Typical values at VCC = 3.3V, T = 25°C. These currents are valid for all product versions (package and speeds).
2. Typical value is calculated by simulation.
P/N: PM1795
87
Rev. 1.6, July 22, 2016
MX25L12835F
Table 18. AC CHARACTERISTICS
(Temperature = -40°C to 85°C, VCC = 2.7V ~ 3.6V)
Symbol
fSCLK
fRSCLK
fTSCLK
Alt.
fC
fR
fT
fQ
tCH(1)
tCLH
tCL(1)
tCLL
tCLCH(2)
tCHCL(2)
tSLCH tCSS
tCHSL
tDVCH tDSU
tCHDX
tDH
tCHSH
tSHCH
tSHSL
tCSH
tSHQZ(2)
tDIS
tCLQV
tV
tCLQX
tWHSL(3)
tSHWL(3)
tDP(2)
tHO
tRES1(2)
tRES2(2)
tW
tBP
tPP
tPP(5)
tSE
tBE32
tBE
tCE
tESL(8)
tPSL(8)
tPRS(9)
tERS(10)
P/N: PM1795
Parameter
Min.
Clock Frequency for all commands (except Read)
D.C.
Clock Frequency for READ instructions
Clock Frequency for 2READ instructions
Clock Frequency for 4READ instructions
Others (fSCLK)
3.3
Clock High Time
Normal Read (fRSCLK)
7
Others (fSCLK)
3.3
Clock Low Time
Normal Read (fRSCLK)
7
Clock Rise Time (peak to peak)
0.1
Clock Fall Time (peak to peak)
0.1
CS# Active Setup Time (relative to SCLK)
3
CS# Not Active Hold Time (relative to SCLK)
3
Data In Setup Time
2
Data In Hold Time
2
CS# Active Hold Time (relative to SCLK)
3
CS# Not Active Setup Time (relative to SCLK)
3
Read
7
CS# Deselect Time
Write/Erase/Program
30
Output Disable Time
Clock Low to Output Valid Loading: 30pF
Loading: 30pF/15pF
Loading: 15pF
Output Hold Time
1
Write Protect Setup Time
20
Write Protect Hold Time
100
CS# High to Deep Power-down Mode
CS# High to Standby Mode without Electronic Signature
Read
CS# High to Standby Mode with Electronic Signature Read
Write Status/Configuration Register Cycle Time
Byte-Program
Page Program Cycle Time
Page Program Cycle Time (n bytes)
Typ.
16
0.5
0.008+
(nx0.004)
88
30
150
280
50
0.3
0.3
10
Unit
MHz
MHz
MHz
MHz
ns
ns
ns
ns
V/ns
V/ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
us
30
us
30
40
30
1.5
us
ms
us
ms
1.5
ms
120
650
650
80
25
25
ms
ms
ms
s
us
us
us
us
8
8
6
(6)
Sector Erase Cycle Time
Block Erase (32KB) Cycle Time
Block Erase (64KB) Cycle Time
Chip Erase Cycle Time
Erase Suspend Latency
Program Suspend Latency
Latency between Program Resume and next Suspend
Latency between Erase Resume and next Suspend
Max.
133
50
84(7)
84(7)
100
400
Rev. 1.6, July 22, 2016
MX25L12835F
Notes:
1. tCH + tCL must be greater than or equal to 1/ Frequency.
2. Typical values given for TA=25°C. Not 100% tested.
3. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
4. Test condition is shown as Figure 79. INPUT TEST WAVEFORMS AND MEASUREMENT LEVEL and Figure
80. OUTPUT LOADING.
5. While programming consecutive bytes, Page Program instruction provides optimized timings by selecting to
program the whole 256 bytes or only a few bytes between 1~256 bytes.
6. “n”=how many bytes to program. In the formula, while n=1, byte program time=12us.
7. By default dummy cycle value. Please refer to the Table 1. Read performance Comparison.
8. Latency time required to complete Erase/Program Suspend operation until WIP bit is "0".
9. For tPRS, Min. timing is needed to issue next program suspend command. However, a period of time equal to/
or longer than typ. timing is also required to complete the program progress.
10. For tERS, Min. timing is needed to issue next erase suspend command. However, a period of time equal to/or
longer than typ. timing is also required to complete the erase progress.
P/N: PM1795
89
Rev. 1.6, July 22, 2016
MX25L12835F
13. OPERATING CONDITIONS
At Device Power-Up and Power-Down
AC timing illustrated in Figure 81. AC Timing at Device Power-Up and Figure 82. Power-Down Sequence are for the
supply voltages and the control signals at device power-up and power-down. If the timing in the figures is ignored,
the device will not operate correctly.
During power-up and power-down, CS# needs to follow the voltage applied on VCC to keep the device not to be
selected. The CS# can be driven low when VCC reach Vcc(min.) and wait a period of tVSL.
Figure 81. AC Timing at Device Power-Up
VCC
VCC(min)
GND
tVR
tSHSL
CS#
tSLCH
tCHSL
tCHSH
tSHCH
SCLK
tDVCH
tCHCL
tCHDX
LSB IN
MSB IN
SI
High Impedance
SO
Symbol
tVR
tCLCH
Parameter
VCC Rise Time
Notes
1
Min.
Max.
500000
Unit
us/V
Notes :
1. Sampled, not 100% tested.
2. For AC spec tCHSL, tSLCH, tDVCH, tCHDX, tSHSL, tCHSH, tSHCH, tCHCL, tCLCH in the figure, please refer to
Table 17. AC CHARACTERISTICS.
P/N: PM1795
90
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 82. Power-Down Sequence
During power-down, CS# needs to follow the voltage drop on VCC to avoid mis-operation.
VCC
CS#
SCLK
Figure 83. Power-up Timing
VCC
VCC(max)
Chip Selection is Not Allowed
VCC(min)
tVSL
Device is fully accessible
VWI
time
P/N: PM1795
91
Rev. 1.6, July 22, 2016
MX25L12835F
Figure 84. Power Up/Down and Voltage Drop
For Power-down to Power-up operation, the VCC of flash device must below VPWD for at least tPWD timing. Please
check the table below for more detail.
VCC
VCC (max.)
Chip Select is not allowed
VCC (min.)
tVSL
Full Device
Access
Allowed
VPWD (max.)
tPWD
Time
Table 19. Power-Up/Down Voltage and Timing
Symbol
tVSL
VWI
VPWD
tPWD
VCC
Parameter
VCC(min.) to device operation
Write Inhibit Voltage
VCC voltage needed to below VPWD for ensuring initialization will occur
The minimum duration for ensuring initialization will occur
VCC Power Supply
Min.
800
1.5
300
2.7
Max.
2.5
0.9
3.6
Unit
us
V
V
us
V
Note: These parameters are characterized only.
13-1. INITIAL DELIVERY STATE
The device is delivered with the memory array erased: all bits are set to 1 (each byte contains FFh). The Status
Register contains 00h (all Status Register bits are 0).
P/N: PM1795
92
Rev. 1.6, July 22, 2016
MX25L12835F
14. ERASE AND PROGRAMMING PERFORMANCE
Parameter
Typ. (1)
Min.
Max. (2)
Unit
40
ms
Write Status Register Cycle Time
Sector Erase Cycle Time (4KB)
30
120
ms
Block Erase Cycle Time (32KB)
0.15
0.65
s
Block Erase Cycle Time (64KB)
0.28
0.65
s
Chip Erase Cycle Time
50
80
s
Byte Program Time (via page program command)
16
30
us
Page Program Time
0.5
1.5
ms
Erase/Program Cycle
100,000
cycles
Note:
1. Typical program and erase time assumes the following conditions: 25°C, 3.3V, and all zero pattern.
2. Under worst conditions of 85°C and 2.7V.
3. System-level overhead is the time required to execute the first-bus-cycle sequence for the programming command.
4. The maximum chip programming time is evaluated under the worst conditions of 0°C, VCC=3.3V, and 100K cycle with 90% confidence level.
15. DATA RETENTION
Parameter
Condition
Min.
Data retention
55˚C
20
Max.
Unit
years
16. LATCH-UP CHARACTERISTICS
Min.
Max.
Input Voltage with respect to GND on all power pins, SI, CS#
-1.0V
2 VCCmax
Input Voltage with respect to GND on SO
-1.0V
VCC + 1.0V
-100mA
+100mA
Current
Includes all pins except VCC. Test conditions: VCC = 3.0V, one pin at a time.
P/N: PM1795
93
Rev. 1.6, July 22, 2016
MX25L12835F
17. ORDERING INFORMATION
PART NO.
CLOCK (MHz)
TEMPERATURE
PACKAGE
MX25L12835FM2I-10G
104
-40°C to 85°C
8-SOP (200mil)
MX25L12835FMI-10G
104
-40°C to 85°C
16-SOP (300mil)
MX25L12835FZ2I-10G
104
-40°C to 85°C
8-WSON (8x6mm)
MX25L12835FZNI-10G
104
-40°C to 85°C
8-WSON (6x5mm)
P/N: PM1795
94
Remark
Rev. 1.6, July 22, 2016
MX25L12835F
18. PART NAME DESCRIPTION
MX 25
L
12835F Z2
I
10 G
OPTION:
G: RoHS Compliant & Halogen-free
SPEED:
10: 104MHz
TEMPERATURE RANGE:
I: Industrial (-40°C to 85°C)
PACKAGE:
M2: 8-SOP (200mil)
M: 16-SOP (300mil)
ZN: 8-WSON (6x5mm)
Z2: 8-WSON (8x6mm)
DENSITY & MODE:
12835F: 128Mb
TYPE:
L: 3V
DEVICE:
25: Serial Flash
P/N: PM1795
95
Rev. 1.6, July 22, 2016
MX25L12835F
19. PACKAGE INFORMATION
19-1. 8-pin SOP (200mil)
P/N: PM1795
96
Rev. 1.6, July 22, 2016
MX25L12835F
19-2. 16-pin SOP (300mil)
P/N: PM1795
97
Rev. 1.6, July 22, 2016
MX25L12835F
19-3. 8-land WSON (6x5mm)
P/N: PM1795
98
Rev. 1.6, July 22, 2016
MX25L12835F
19-4. 8-land WSON (8x6mm)
P/N: PM1795
99
Rev. 1.6, July 22, 2016
MX25L12835F
20. REVISION HISTORY
Revision No. Description
0.01
1. Added Security Register description
2. Modify the VIH/VIL
3. Modify the overshoot from VCC+1.0V or -0.5V to
VCC+2.0V or -2.0V
4. Added Fast Boot Sequence
5. Modified data retention from 10 years to 20 years
6. Added Data Retention
7. Corrected content error
Page
P61,62
P88
P86
1.0
1. Removed "Advanced Information"
2. Modified 16-SOP pin descriptions
3. Updated Read/Write Fast Boot Register Sequence figures
4. Modified SPB Lock Register table
5. Optimize ISB1 & ISB2 spec
6. Modified Min. tVSL from 500us to 800us.
7. Corrected content error
P4
OCT/23/2012
P7
P52
P67
P88
P93
P15,16,21,27~29,30,
P36,50,62,74,88
1.1
P84
DEC/26/2012
P93
P9,13,50,62,66,89
1. Modified RESET Timing definition
2. Added Power Up/Down and Voltage Drop information
3. Corrected content error
1.2
Date
APR/17/2012
P51
P4
P94
P44,47,48,52,63,
P65,70,74,77,84
1. Added USPB information
2. Added note on WP# setup
3. Modified tSLCH & tCHSH (Min.) from 5ns to 3.4ns
4. Corrected content error
P65,71
P37
P89
P50,51,76,77,
P86,87,89
JUL/16/2013
1.3
1. Updated parameters for DC/AC Characteristics
2. Updated Erase and Programming Performance
3. Content correction
4. Modified VCC to Ground Potential parameter
P88,89
P94
P65~71
P86
OCT/31/2013
1.4
1. Added Suspend/Resume symbols and values
2. Description modification
P75,89,90
P63,65~72
SEP/24/2014
1.5
1. Revised Note of RDSPB and WRSPB figures
2. Revised Erase Suspend/Write Resume descriptions
3. Updated BLOCK DIAGRAM
P69-70
P74,76
P8
JUL/09/2015
1.6
1. Updated tVR values
2. Updated package outline for 8-WSON
3. Updated Write Inhibit Voltage
4. Description modification
P90,92
P99
P92
P46-48,56,71
JUL/22/2016
P/N: PM1795
100
Rev. 1.6, July 22, 2016
MX25L12835F
Except for customized products which has been expressly identified in the applicable agreement, Macronix's
products are designed, developed, and/or manufactured for ordinary business, industrial, personal, and/or
household applications only, and not for use in any applications which may, directly or indirectly, cause death,
personal injury, or severe property damages. In the event Macronix products are used in contradicted to their
target usage above, the buyer shall take any and all actions to ensure said Macronix's product qualified for its
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distributors shall be released from any and all liability arisen therefrom.
Copyright© Macronix International Co., Ltd. 2012~2016. All rights reserved, including the trademarks and
tradename thereof, such as Macronix, MXIC, MXIC Logo, MX Logo, Integrated Solutions Provider, NBit, Nbit,
NBiit, Macronix NBit, eLiteFlash, HybridNVM, HybridFlash, XtraROM, Phines, KH Logo, BE-SONOS, KSMC,
Kingtech, MXSMIO, Macronix vEE, Macronix MAP, Rich Au­dio, Rich Book, Rich TV, and FitCAM. The names
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For the contact and order information, please visit Macronix’s Web site at: http://www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.
101