Ultrafast Recovery Diode FMXA-1106S ■General Description November, 2005 ■Package---TO220F-2Pin Shorter trr at high temperature has been realized by employing the new life time control technology. This is the optimum characteristic as a fast recovery diode (FRD) for a continuous-current-mode PFC circuit. ■Applications ■Key Specifications ● PDP panel driver circuit. ● Continuous-current-mode PFC circuit. ● An output rectifier for SMPS, UPS, DC-DC converter. ●Absolute maximum ratings Parameter Symbol Unit Rating Transient Peak Reverse Voltage VRSM V 600 Peak Reverse Voltage VRM V 600 Average Forward Current IF(AV) A 10 Peak Surge Forward Current IFSM A 100 ● A Flywheel diode for the inverter and chopper. ■Features ●Electrical characteristics ● The shortest trr characteristic in the world at high temperature (100°C). Realized to shorten the trr at 100°C by 26% compared to the conventional device. (73ns => 54ns (typ), IF=IRP=500/500mA. Compared to the SK’s conventional device FMX-G26S) Parameter Symbol Unit Rating Conditions Forward Voltage Drop VF V 1.98 max. IF=10A Reverse Leakage Current IR μA 100 max. VR=VRM Reverse Leakage Current Under High Temperature H•IR mA 30 max. Reverse Recovery Time trr ns 28 max. VR=VRM, Tj=150°C IF=IRP=500mA 90%Recovery point Typical Current Waveform, mounted on the power supply FMX-G26S (Conventional device) IRP Qrr FMXA-1106S (New device) trr = 65ns IRP = 7.07A Qrr = 229.1nC IRP Measurement condition: FCC power supply, f=160kHz, Load 5A (DC12V) Qrr trr = 50ns IRP = 5.85A Qrr = 147.3nC Horiz:40ns/div, Vert:2A/div Sanken Electric Co.,Ltd. http://www.sanken-ele.co.jp/en/ 1/8 D01-002EA-051128 Ultrafast Recovery Diode FMXA-1106S November, 2005 Die Structure: Silicon Planer Diode (FRD) §1. Absolute Maximum Ratings and Electrical Characteristics •Absolute Maximum Ratings No. Item Symbol Unit Rating Conditions 1 Transient Peak Reverse Voltage VRSM V 600 2 Peak Reverse Voltage VRM V 600 3 Average Forward Current IF(AV) A 10 4 Peak Surge Forward Current IFSM A 100 10msec. Half sine-wave, one shot 2 2 1msec ≤ t ≤ 10msec 2 5 I t Limiting Value It AS 50 6 Junction Temperature Tj °C -40 to +150 7 Storage Temperature Tstg °C -40 to+150 Symbol Unit Rating • Electrical Characteristics No. Item Conditions 1 Forward Voltage Drop VF V 1.98 max. IF=10A 2 Reverse Leakage Current IR µA 100 max. VR=VRM H•IR mA 30 max. trr ns 28 max Rth(j-c) °C/W 4.0 max. 3 Reverse Leakage Current Under High Temperature 4 Reverse Recovery Time 5 Thermal Resistance VR=VRM, Tj=150°C IF=IRP=500mA 90% Recovery point Between Junction and case Sanken Electric Co.,Ltd. D01-002EA-051128 2/8 Ultrafast Recovery Diode FMXA-1106S November, 2005 §2. Package information 2-1 Package type, physical dimensions and material 4.4 4.0 *1 *2 *3 1.35 13.5±0.5 3.9 0.8 16.9 φ3.3 4.2 2.8 C0.5 10.0 0.85 0.45 +0.2 -0.1 指示なき公差±0.2 tolerance: ±0.2 tolerance±0.2 5.08 2.4 Unit: ㎜ 2-2 Marking Marking Part Number Type Name Polarity Lot number 1st letter: Last digit of year FMXA-1106S XA1106 2nd letter: Month From 1 to 9 for Jan. to Sep., O for Oct., N for Nov., D for Dec. S 3rd & 4th letter: Day e.g.: 5O06 (October 6, 2005) Sanken Electric Co.,Ltd. D01-002EA-051128 3/8 Ultrafast Recovery Diode FMXA-1106S November, 2005 §3. Characteristics IF(AV) - PF Forward Power Dissipation PF (W) 35 Tj=150°C t/T=1/6 30 25 t T t/T=1/3,Sine-wave 20 t/T=1/2 15 10 DC 5 0 0 2 4 6 8 10 Average Forward Current IF(AV) (A) V R - PR Reverse Power Dissipation PR (W) 14 Tj=150°C 12 10 1-t/T=5/6 t T 1-t/T=2/3 8 6 1-t/T=1/2 4 2 Sine-wave 0 0 100 200 300 400 500 600 Reverse Voltage VR (V) Sanken Electric Co.,Ltd. D01-002EA-051128 4/8 Ultrafast Recovery Diode FMXA-1106S November, 2005 §4. Derating Tc - IF(AV) VR=0 (V) 10 Average Forward Current IF(AV) (A) DC 8 t/T=1/2 t/T=1/3, Sine-wave 6 t/T=1/6 4 Tj=150°C 2 t T 0 0 50 100 150 Case Temperature Tc (°C) Tc - IF(AV) VR=600 (V) Average Forward Current IF(AV) (A) 10 D.C. 8 Sine wave 6 t/T=1/6 4 Tj=150°C t/T=1/2 t/T=1/3 2 t T 0 0 50 100 150 Case Temperature Tc (°C) Sanken Electric Co.,Ltd. D01-002EA-051128 5/8 Ultrafast Recovery Diode FMXA-1106S November, 2005 <Worldwide Contacts> Asia Pacific China Sanken Electric Hong Kong Co., Ltd. Suite 1026 Ocean Centre, Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: 852-2735-5262 Fax: 852-2735-5494 Sanken Electric (Shanghai) Co., Ltd. Room3202, Maxdo Centre, Xingyi Road 8, Changning district, Shanghai, China Tel: 86-21-5208-1177 Fax: 86-21-5208-1757 Taiwan Sanken Electric Co., Ltd. Room 1801, 18th Floor, 88 Jung Shiau East Road, Sec. 2, Taipei 100, Taiwan R.O.C. Tel: 886-2-2356-8161 Fax: 886-2-2356-8261 India Saket Devices Pvt. Ltd. Office No.13, First Floor, Bandal - Dhankude Plaza, Near PMT Depot, Paud Road, Kothrud, Pune - 411 038, India Tel: 91-20-5621-2340 91-20-2528-5449 Fax: 91-20-2528-5459 Japan Sanken Electric Co., Ltd. Overseas Sales Headquaters Metropolitan Plaza Bldg. 1-11-1 Nishi-Ikebukuro, Toshima-ku, Tokyo 171-0021, Japan Tel: 81-3-3986-6164 Fax: 81-3-3986-8637 Korea Sanken Electric Korea Co., Ltd. Mirae Asset Life Bldg. 6F, 168 Kongduk-dong, Mapo-ku, Seoul, 121-705, Korea Tel: 82-2-714-3700 Fax: 82-2-3272-2145 Singapore Sanken Electric Singapore Pte. Ltd. 150 Beach Road, #14-03 The Gateway West, Singapore 189720 Tel: 65-6291-4755 Fax: 65-6297-1744 Sanken Electric Co.,Ltd. D01-002EA-051128 6/8 Ultrafast Recovery Diode FMXA-1106S November, 2005 Europe United Kingdom Sanken Power Systems (UK) Limited Pencoed Technology Park, Pencoed, Bridgend CF35 5HY. UK Tel: 44-1656-869-100 Fax: 44-1656-869-162 North America United States Allegro MicroSystems, Inc. 115 Northeast Cutoff, Worcester, Massachusetts 01606, U.S.A. Tel: 1-508-853-5000 Fax: 1-508-853-3353 Allegro MicroSystems, Inc. (Southern California) 14 Hughes Street, Suite B105, Irvine, CA 92618 Tel: 1-949-460-2003 Fax: 1-949-460-7837 Sanken Electric Co.,Ltd. D01-002EA-051128 7/8 Ultrafast Recovery Diode FMXA-1106S November, 2005 CAUTION / WARNING ●The information in this publication has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. ● Sanken reserves the right to make changes without further notice to any products herein in the interest of improvements in the performance, reliability, or manufacturability of its products. 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