MCH6626 MCH6626 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications unit : mm 2173A [MCH6626] 0.3 4 5 6 3 2 0.65 1 0.15 0.07 0.25 2.1 • The MCH6626 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling high-density mounting. Excellent ON-resistance characteristic. 2.5V drive. 0.25 • Package Dimensions 1.6 Features • Ordering number : ENN7918 2.0 6 5 4 1 2 3 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 0.85 (Bottom view) Specifications SANYO : MCPH6 (Top view) Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Symbol Conditions N-channel VDSS VGSS ID IDP Channel Temperature PD Tch Storage Temperature Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm)1unit P-channel Unit 20 --20 V ±10 ±10 V 1.6 --1.0 A 6.4 --4.0 A 0.8 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [N-channel] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current V(BR)DSS IDSS ID=1mA, VGS=0 20 IGSS VGS(off) VGS=±8V, VDS=0 VDS=10V, ID=1mA 0.4 Forward Transfer Admittance yfs RDS(on)1 VDS=10V, ID=0.8A 1.4 Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 Cutoff Voltage 1 µA ±10 µA 1.3 2.4 V S ID=0.8A, VGS=4V 180 230 mΩ ID=0.4A, VGS=2.5V 220 310 mΩ ID=0.1A, VGS=1.8V 300 450 mΩ Marking : WA © 2011, SCILLC. All rights reserved. Jan-2011, Rev. 0 V VDS=20V, VGS=0 Continued on next page. www.onsemi.com Rev.0 I Page 1 of 6 I www.onsemi.com Publication Order Number: MCH6626/D MCH6626 Continued from preceding page. Parameter Symbol Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time Ratings Conditions min typ VDS=10V, f=1MHz VDS=10V, f=1MHz Unit max 105 pF 23 pF VDS=10V, f=1MHz See specified Test Circuit. 15 pF 6 ns See specified Test Circuit. 16 ns See specified Test Circuit. 19 ns See specified Test Circuit. 8 ns 1.4 nC 0.3 nC Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd VDS=10V, VGS=4V, ID=1.6A VDS=10V, VGS=4V, ID=1.6A VDS=10V, VGS=4V, ID=1.6A Diode Forward Voltage VSD IS=1.6A, VGS=0 0.3 0.92 nC 1.2 V --1 µA [P-channel] Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS IGSS Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance VGS(off) yfs VGS=±8V, VDS=0 VDS=--10V, ID=--1mA VDS=--10V, ID=--500mA RDS(on)1 RDS(on)2 ID=--500mA, VGS=--4V ID=--300mA, VGS=--2.5V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time td(off) tf Fall Time ID=--1mA, VGS=0 VDS=--20V, VGS=0 --20 0.7 VDS=--10V, f=1MHz VDS=--10V, f=1MHz ns See specified Test Circuit. 6 ns See specified Test Circuit. 15 ns See specified Test Circuit. 7 ns 1.5 nC 0.4 nC IS=--1A, VGS=0 0.3 --0.9 Electrical Connection 4 1 : Source1 2 : Gate1 3 : Drain2 4 : Source2 5 : Gate2 6 : Drain1 [P-channel] VDD=10V VDD= --10V VIN 0V --4V ID=800mA RL=12.5Ω VOUT VIN D PW=10µs D.C.≤1% ID= --500mA RL=20Ω VOUT VIN D PW=10µs D.C.≤1% G G MCH6626 P.G 50Ω S mΩ pF VSD VIN 760 8 Diode Forward Voltage 4V 0V 540 S 15 Qgd Switching Time Test Circuit [N-channel] mΩ VDS=--10V, f=1MHz See specified Test Circuit. Gate-to-Drain “Miller” Charge Top view 500 pF VDS=--10V, VGS=--4V, ID=--1A VDS=--10V, VGS=--4V, ID=--1A VDS=--10V, VGS=--4V, ID=--1A 3 380 pF Qg 2 V 1.2 23 Qgs 1 µA 115 Gate-to-Source Charge 5 ±10 --1.3 --0.4 Total Gate Charge 6 V MCH6626 P.G 50Ω Rev.0 I Page 2 of 6 I www.onsemi.com S nC --1.5 V MCH6626 --4. 0 V 2.5 3.0V Drain Current, ID -- A 4 .0 V V 6.0V 1.5 0V --0.7 . --2 --0.6 --0.5 --0.4 --0.3 VGS= --1.5V --0.2 0.4 VGS=1.0V --0.1 0 Drain-to-Source Voltage, VDS -- V 1.0 --2 5°C 25 7 °C 5°C [Nch] VDS=10V --2.0 --1.6 Drain Current, ID -- A 1.6 1.4 1.2 1.0 0.8 Ta= 7 5°C --25 °C 0.6 --1.2 --1.0 --0.8 --0.6 --0.2 25 25 0.2 --1.4 --0.4 °C 0.4 VDS= --10V --1.8 Ta= 1.8 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Drain-to-Source Voltage, VDS -- V IT03368 ID -- VGS [Pch] 0 IT02916 ID -- VGS 2.0 0.9 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Gate-to-Source Voltage, VGS -- V 2.0 0 0.5 1.0 1.5 2.0 2.5 Gate-to-Source Voltage, VGS -- V IT02917 RDS(on) -- VGS 400 1.8 [Nch] RDS(on) -- VGS 1000 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 ID=0.4A 0.8A 300 250 200 150 100 50 2 4 6 8 Gate-to-Source Voltage, VGS -- V RDS(on) -- Ta 700 ID= --0.3A --0.5A 600 500 400 300 200 100 350 300 2.5V S= VG , 0.4A 4.0V I D= S= VG , A .8 I D=0 250 200 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V 0 IT03305 [Nch] 140 160 [Pch] Ta=25°C 800 10 RDS(on) -- Ta 1000 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 400 3.0 IT03369 900 0 0 0 °C 0.8 °C 0.7 75 0.6 --2 5 0.5 25 0.4 Ta = 0.3 75 °C °C --25 °C 0.2 Ta = 0.1 0 °C 0 Drain Current, ID -- A [Pch] --0.8 8V 1. V 0.8 ID -- VDS --1.0 --0.9 10.0 Drain Current, ID -- A 1.6 1.2 [Nch] V --3 .0V --2 .5V ID -- VDS 2.0 --10 IT03370 [Pch] 900 800 700 .5V --2 S= A, VG --0.3 I D= 600 V = --4.0 , V GS 500 0.5A I D= -- 400 300 200 100 0 --60 IT03306 Rev.0 I Page 3 of 6 I www.onsemi.com --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT03371 yfs -- ID 10 7 5 [Nch] VDS=10V 3 2 C 25° 1.0 7 5 C 5° = Ta 3 2 --2 C 5° 7 0.1 7 5 3 2 0.01 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A Ta= --25 °C C 75° 5 3 2 0.1 --0.01 2 3 5 7 2 --0.1 3 5 Drain Current, ID -- A [Nch] 7 --1.0 IT03372 IF -- VSD --10 7 5 [Pch] VGS=0 0.4 0.5 0.6 3 2 0.7 0.8 0.9 1.0 1.1 Diode Forward Voltage, VSD -- V --0.01 --0.2 1.2 [Nch] tr td(off) 2 tf 10 7 td(on) 5 3 2 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 IT03373 SW Time -- ID [Pch] VDD= --10V VGS= --4V 2 3 --0.5 3 Switching Time, SW Time -- ns 5 --0.4 Diode Forward Voltage, VSD -- V VDD=10V VGS=4V 7 --0.3 IT02921 SW Time -- ID 100 2 --0.1 7 5 100 7 5 3 tr 0.3 3 --25°C 5°C 25° C --25 °C 0.1 7 5 --1.0 7 5 25°C 3 2 2 Ta= 75°C Forward Current, IF -- A 1.0 7 5 Ta= 7 Forward Current, IF -- A 7 3 0.01 0.2 Switching Time, SW Time -- ns C 25° 1.0 VGS=0 3 2 td(off) 2 td(on) 10 7 tf 5 3 2 1.0 1.0 0.1 2 3 5 7 2 1.0 3 Drain Current, ID -- A 5 2 --0.1 IT02922 Ciss, Coss, Crss -- VDS 1000 [Nch] 3 5 7 --1.0 Drain Current, ID -- A 2 3 IT03374 Ciss, Coss, Crss -- VDS 3 f=1MHz 7 [Pch] f=1MHz 2 5 3 Ciss, Coss, Crss -- pF Ciss, Coss, Crss -- pF VDS= --10V 5 3 2 [Pch] 2 IT02920 IF -- VSD 10 7 5 yfs -- ID 3 Forward Transfer Admittance, yfs -- S Forward Transfer Admittance, yfs -- S MCH6626 2 Ciss 100 7 5 3 Coss 2 Ciss 100 7 5 3 Coss 2 Crss Crss 10 10 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 0 --2 IT02923 Rev.0 I Page 4 of 6 I www.onsemi.com --4 --6 --8 --10 --12 --14 --16 Drain-to-Source Voltage, VDS -- V --18 --20 IT03375 MCH6626 VGS -- Qg VDS=10V ID=1.6A 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Total Gate Charge, Qg -- nC --2.5 --2.0 --1.5 --1.0 --0.5 0 IDP=6.4A 7 5 10 0m s op era tio 3 2 n Operation in this area is limited by RDS(on). 0.1 7 5 3 2 2 3 5 7 1.0 2 3 5 7 0.8 s ed on ac bo ar d( --0.1 7 5 --0.1 0m .8m m )1 un it 0 20 40 60 80 100 120 Ambient Tamperature, Ta -- °C 140 n Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm)1unit m2 ✕0 0 s tio 90 0.2 0m op Operation in this area is limited by RDS(on). am 0.4 10 era er ic ms DC nt 0.6 1.6 IT03376 10 3 2 --0.01 3 1.4 <10µs ID= --1.0A M ou 1.2 1m IT03308 Drain-to-Source Voltage, VDS -- V [Pch, Nch] PD -- Ta 1.0 1.0 IDP= --4.0A 7 5 2 2 10 --1.0 3 Ta=25°C Single pulse Mounted on a ceramic board(900mm2✕0.8mm)1unit 0.01 0.1 0.8 3 2 ms DC 0.6 ASO --10 10 1.0 7 5 0.4 Total Gate Charge, Qg -- nC <10µs 10 1m 0µs s ID=1.6A 0.2 IT03307 Drain Current, ID -- A Drain Current, ID -- A --3.0 1.6 ASO 10 7 5 Allowable Power Dissipation, PD -- W VDS= --10V --3.5 ID= --1A 0 0 3 2 VGS -- Qg --4.0 Gate-to-Source Voltage, VGS -- V Gate-to-Source Voltage, VGS -- V 4.0 160 IT02521 Rev.0 I Page 5 of 6 I www.onsemi.com 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT03377 MCH6626 ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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