ON MCH6626 General-purpose switching device application Datasheet

MCH6626
MCH6626
N-Channel and P-Channel Silicon MOSFETs
General-Purpose Switching Device Applications
unit : mm
2173A
[MCH6626]
0.3
4
5
6
3 2
0.65
1
0.15
0.07
0.25
2.1
•
The MCH6626 incorporates an N-channel MOSFET
and a P-channel MOSFET that feature low ONresistance and high-speed switching, thereby enabling
high-density mounting.
Excellent ON-resistance characteristic.
2.5V drive.
0.25
•
Package Dimensions
1.6
Features
•
Ordering number : ENN7918
2.0
6
5
4
1
2
3
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
0.85
(Bottom view)
Specifications
SANYO : MCPH6
(Top view)
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Symbol
Conditions
N-channel
VDSS
VGSS
ID
IDP
Channel Temperature
PD
Tch
Storage Temperature
Tstg
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)1unit
P-channel
Unit
20
--20
V
±10
±10
V
1.6
--1.0
A
6.4
--4.0
A
0.8
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
ID=1mA, VGS=0
20
IGSS
VGS(off)
VGS=±8V, VDS=0
VDS=10V, ID=1mA
0.4
Forward Transfer Admittance
yfs
RDS(on)1
VDS=10V, ID=0.8A
1.4
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
Cutoff Voltage
1
µA
±10
µA
1.3
2.4
V
S
ID=0.8A, VGS=4V
180
230
mΩ
ID=0.4A, VGS=2.5V
220
310
mΩ
ID=0.1A, VGS=1.8V
300
450
mΩ
Marking : WA
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
V
VDS=20V, VGS=0
Continued on next page.
www.onsemi.com
Rev.0 I Page
1 of 6 I www.onsemi.com
Publication Order Number:
MCH6626/D
MCH6626
Continued from preceding page.
Parameter
Symbol
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
Ratings
Conditions
min
typ
VDS=10V, f=1MHz
VDS=10V, f=1MHz
Unit
max
105
pF
23
pF
VDS=10V, f=1MHz
See specified Test Circuit.
15
pF
6
ns
See specified Test Circuit.
16
ns
See specified Test Circuit.
19
ns
See specified Test Circuit.
8
ns
1.4
nC
0.3
nC
Total Gate Charge
Qg
Gate-to-Source Charge
Qgs
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=4V, ID=1.6A
VDS=10V, VGS=4V, ID=1.6A
VDS=10V, VGS=4V, ID=1.6A
Diode Forward Voltage
VSD
IS=1.6A, VGS=0
0.3
0.92
nC
1.2
V
--1
µA
[P-channel]
Drain-to-Source Breakdown Voltage
V(BR)DSS
Zero-Gate Voltage Drain Current
IDSS
IGSS
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
VGS(off)
yfs
VGS=±8V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--500mA
RDS(on)1
RDS(on)2
ID=--500mA, VGS=--4V
ID=--300mA, VGS=--2.5V
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Turn-ON Delay Time
td(on)
tr
Rise Time
Turn-OFF Delay Time
td(off)
tf
Fall Time
ID=--1mA, VGS=0
VDS=--20V, VGS=0
--20
0.7
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
ns
See specified Test Circuit.
6
ns
See specified Test Circuit.
15
ns
See specified Test Circuit.
7
ns
1.5
nC
0.4
nC
IS=--1A, VGS=0
0.3
--0.9
Electrical Connection
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
[P-channel]
VDD=10V
VDD= --10V
VIN
0V
--4V
ID=800mA
RL=12.5Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
ID= --500mA
RL=20Ω
VOUT
VIN
D
PW=10µs
D.C.≤1%
G
G
MCH6626
P.G
50Ω
S
mΩ
pF
VSD
VIN
760
8
Diode Forward Voltage
4V
0V
540
S
15
Qgd
Switching Time Test Circuit
[N-channel]
mΩ
VDS=--10V, f=1MHz
See specified Test Circuit.
Gate-to-Drain “Miller” Charge
Top view
500
pF
VDS=--10V, VGS=--4V, ID=--1A
VDS=--10V, VGS=--4V, ID=--1A
VDS=--10V, VGS=--4V, ID=--1A
3
380
pF
Qg
2
V
1.2
23
Qgs
1
µA
115
Gate-to-Source Charge
5
±10
--1.3
--0.4
Total Gate Charge
6
V
MCH6626
P.G
50Ω
Rev.0 I Page 2 of 6 I www.onsemi.com
S
nC
--1.5
V
MCH6626
--4.
0
V
2.5
3.0V
Drain Current, ID -- A
4 .0 V
V
6.0V
1.5
0V
--0.7
.
--2
--0.6
--0.5
--0.4
--0.3
VGS= --1.5V
--0.2
0.4
VGS=1.0V
--0.1
0
Drain-to-Source Voltage, VDS -- V
1.0
--2
5°C
25 7
°C 5°C
[Nch]
VDS=10V
--2.0
--1.6
Drain Current, ID -- A
1.6
1.4
1.2
1.0
0.8
Ta=
7
5°C
--25
°C
0.6
--1.2
--1.0
--0.8
--0.6
--0.2
25
25
0.2
--1.4
--0.4
°C
0.4
VDS= --10V
--1.8
Ta=
1.8
--0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V
IT03368
ID -- VGS
[Pch]
0
IT02916
ID -- VGS
2.0
0.9
0
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Gate-to-Source Voltage, VGS -- V
2.0
0
0.5
1.0
1.5
2.0
2.5
Gate-to-Source Voltage, VGS -- V
IT02917
RDS(on) -- VGS
400
1.8
[Nch]
RDS(on) -- VGS
1000
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
350
ID=0.4A
0.8A
300
250
200
150
100
50
2
4
6
8
Gate-to-Source Voltage, VGS -- V
RDS(on) -- Ta
700
ID= --0.3A --0.5A
600
500
400
300
200
100
350
300
2.5V
S=
VG
,
0.4A
4.0V
I D=
S=
VG
,
A
.8
I D=0
250
200
150
100
50
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
--2
--4
--6
--8
Gate-to-Source Voltage, VGS -- V
0
IT03305
[Nch]
140
160
[Pch]
Ta=25°C
800
10
RDS(on) -- Ta
1000
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
400
3.0
IT03369
900
0
0
0
°C
0.8
°C
0.7
75
0.6
--2
5
0.5
25
0.4
Ta
=
0.3
75
°C
°C --25
°C
0.2
Ta
=
0.1
0
°C
0
Drain Current, ID -- A
[Pch]
--0.8
8V
1.
V
0.8
ID -- VDS
--1.0
--0.9
10.0
Drain Current, ID -- A
1.6
1.2
[Nch]
V
--3
.0V
--2
.5V
ID -- VDS
2.0
--10
IT03370
[Pch]
900
800
700
.5V
--2
S=
A, VG
--0.3
I D=
600
V
= --4.0
, V GS
500
0.5A
I D= --
400
300
200
100
0
--60
IT03306
Rev.0 I Page 3 of 6 I www.onsemi.com
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT03371
yfs -- ID
10
7
5
[Nch]
VDS=10V
3
2
C
25°
1.0
7
5
C
5°
=
Ta
3
2
--2
C
5°
7
0.1
7
5
3
2
0.01
0.001
2 3
5 7 0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
Drain Current, ID -- A
Ta=
--25
°C
C
75°
5
3
2
0.1
--0.01
2
3
5
7
2
--0.1
3
5
Drain Current, ID -- A
[Nch]
7 --1.0
IT03372
IF -- VSD
--10
7
5
[Pch]
VGS=0
0.4
0.5
0.6
3
2
0.7
0.8
0.9
1.0
1.1
Diode Forward Voltage, VSD -- V
--0.01
--0.2
1.2
[Nch]
tr
td(off)
2
tf
10
7
td(on)
5
3
2
--0.6
--0.7
--0.8
--0.9
--1.0
--1.1
--1.2
IT03373
SW Time -- ID
[Pch]
VDD= --10V
VGS= --4V
2
3
--0.5
3
Switching Time, SW Time -- ns
5
--0.4
Diode Forward Voltage, VSD -- V
VDD=10V
VGS=4V
7
--0.3
IT02921
SW Time -- ID
100
2
--0.1
7
5
100
7
5
3
tr
0.3
3
--25°C
5°C
25°
C
--25
°C
0.1
7
5
--1.0
7
5
25°C
3
2
2
Ta=
75°C
Forward Current, IF -- A
1.0
7
5
Ta=
7
Forward Current, IF -- A
7
3
0.01
0.2
Switching Time, SW Time -- ns
C
25°
1.0
VGS=0
3
2
td(off)
2
td(on)
10
7
tf
5
3
2
1.0
1.0
0.1
2
3
5
7
2
1.0
3
Drain Current, ID -- A
5
2
--0.1
IT02922
Ciss, Coss, Crss -- VDS
1000
[Nch]
3
5
7
--1.0
Drain Current, ID -- A
2
3
IT03374
Ciss, Coss, Crss -- VDS
3
f=1MHz
7
[Pch]
f=1MHz
2
5
3
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- pF
VDS= --10V
5
3
2
[Pch]
2
IT02920
IF -- VSD
10
7
5
yfs -- ID
3
Forward Transfer Admittance, yfs -- S
Forward Transfer Admittance, yfs -- S
MCH6626
2
Ciss
100
7
5
3
Coss
2
Ciss
100
7
5
3
Coss
2
Crss
Crss
10
10
0
2
4
6
8
10
12
14
16
Drain-to-Source Voltage, VDS -- V
18
20
0
--2
IT02923
Rev.0 I Page 4 of 6 I www.onsemi.com
--4
--6
--8
--10
--12
--14
--16
Drain-to-Source Voltage, VDS -- V
--18
--20
IT03375
MCH6626
VGS -- Qg
VDS=10V
ID=1.6A
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Total Gate Charge, Qg -- nC
--2.5
--2.0
--1.5
--1.0
--0.5
0
IDP=6.4A
7
5
10
0m
s
op
era
tio
3
2
n
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
2
3
5
7 1.0
2
3
5
7
0.8
s
ed
on
ac
bo
ar
d(
--0.1
7
5
--0.1
0m
.8m
m
)1
un
it
0
20
40
60
80
100
120
Ambient Tamperature, Ta -- °C
140
n
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)1unit
m2
✕0
0
s
tio
90
0.2
0m
op
Operation in this
area is limited by RDS(on).
am
0.4
10
era
er
ic
ms
DC
nt
0.6
1.6
IT03376
10
3
2
--0.01
3
1.4
<10µs
ID= --1.0A
M
ou
1.2
1m
IT03308
Drain-to-Source Voltage, VDS -- V
[Pch, Nch]
PD -- Ta
1.0
1.0
IDP= --4.0A
7
5
2
2
10
--1.0
3
Ta=25°C
Single pulse
Mounted on a ceramic board(900mm2✕0.8mm)1unit
0.01
0.1
0.8
3
2
ms
DC
0.6
ASO
--10
10
1.0
7
5
0.4
Total Gate Charge, Qg -- nC
<10µs
10
1m 0µs
s
ID=1.6A
0.2
IT03307
Drain Current, ID -- A
Drain Current, ID -- A
--3.0
1.6
ASO
10
7
5
Allowable Power Dissipation, PD -- W
VDS= --10V
--3.5 ID= --1A
0
0
3
2
VGS -- Qg
--4.0
Gate-to-Source Voltage, VGS -- V
Gate-to-Source Voltage, VGS -- V
4.0
160
IT02521
Rev.0 I Page 5 of 6 I www.onsemi.com
2
3
5
7 --1.0
2
3
5
7 --10
Drain-to-Source Voltage, VDS -- V
2
3
IT03377
MCH6626
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products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of
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protective circuits and error prevention circuits for safe design, redundant design, and structural design. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications
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* 2/ / 1 MCH6626/D
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