FB-3V3S33 Chip Bi - directional TVS diode 1 Mechanical Data 2 Notes Dice size AX:380um,AY:380um Wafer size 4” (Gross die:40,320pcs/Good die>38,304pcs) Chip Thickness 138um±12um Scribe line width 60um Top metal Al/Au/Ag Back side metal Al/Au/Ag/Sn Parameter Symbol Reverse stand-off voltage Peak pulse power Peak pulse current VRWM PPP IPP Electrostatic discharge VESD Max.junction temp. Conditions Value Unit 3.3 250* 15.0* V W A Tp=8/20us Tp=8/20us IEC61000-4-2 ± 10(Contact) Level-4 ±25(Air) Tj 150 KV °C Characteristics TA=25°C Parameter Symbol Condition Min. VBR IT=1mA 3.5 IR V=±3.0V Snap-Back Voltage Vsb Isb=50mA Clamping Voltage VC Diode capacitance Cj Breakdown voltage Reverse leakage current IPP=1.0A IPP=15.0A VR=0V f=1MHZ Typ. Max. Unit V 0.05 3.3 0.9 uA 5.3 V 5.5* 10.0* V 25.0 pf Notes: (1)sampling testing:no bad dice inking/guaranteed good die >95% (2)Testing follow customer (3)Tj=Ta+Rth(j-a)*(pf+pr),where Rth(j-a)-thermal resistance,Pf-forward power dissipation, Pr-revers power dissipation (4)**For device testing EW1608B3-FW-A Futurewafer Technology Co.,Ltd www.futurewafer.com.tw+886-3-3573583