New Product DG636 Vishay Siliconix 0.5 pC Charge Injection, 100 pA Leakage, Dual SPDT Analog Switch DESCRIPTION FEATURES The DG636 is an analog CMOS, dual SPDT switch, designed to operate from a + 2.7 V to + 12 V single supply or from ± 2.7 V to ± 5.0 V, dual supplies. The DG636 is fully specified at + 3 V, + 5 V and ± 5 V. All control logic inputs have guaranteed 2 V logic high limits when operating from + 5 V or ± 5 V supplies and 1.4 V when operating from a 3 V supply. The DG636 switches conduct equally well in both directions and offer rail to rail analog signal handling. < 1 pC low charge injection, coupled with very low switch capacitance and leakage current makes this product ideal for use in precision instrumentation applications. Operating temperature range is specified from - 40 °C to + 125 °C. The DG636 is available in 14 lead TSSOP and the space saving 1.8 x 2.6 mm miniQFN package. • Ultra low charge injection (± 0.5 pC, typ. over the full analog signal range) • Leakage current < 0.5 nA max. at 85 °C RoHS COMPLIANT • Low switch capacitance (Csoff, 2 pF typ.) • Low rDS(on) - 115 Ω max. • Fully specified with single supply operation at 3.0 V, 5.0 V and dual supplies at ± 5.0 V • Low voltage, 2.5 V CMOS/TTL compatible • 600 MHz, - 3 dB bandwidth • Excellent isolation and crosstalk performance (typ. > - 60 dB at 10 MHz) • Fully specified from - 40 °C to 85 °C and - 40 °C to + 125 °C • 14 Pin TSSOP and 16 Pin miniQFN package (1.8 x 2.6 mm) APPLICATIONS • • • • • • High-end data acquisition Medical instruments Precision instruments High speed communications applications Automated test equipment Sample and hold applications FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION DG636 mQFN-16 Rxx Pin 1 Device Marking: Rxx for DG636 (miniQFN16) xx = Date/Lot Traceability Code ENABLE 1 V- DG636 TSSOP14 A0 NC NC A1 16 15 14 13 14 A1 13 GND 3 12 V+ A0 1 ENABLE 2 V- 12 GND 2 11 V+ S1A 3 10 S2A S1A 4 11 S2A S1B 4 9 S2B S1B 5 11 S2B 8 D1 6 9 D2 D2 NC 7 8 NC Logic 5 D1 6 77 NC NC Top View Logic Top View ENABLE = Hi, all switches are controlled by addr pins. ENABLE = Lo, all switches are off. Document Number: 69901 S-80239-Rev. B, 04-Feb-08 www.vishay.com 1 New Product DG636 Vishay Siliconix TRUTH TABLE Selected Input On Switches Enable Input A1 A0 DG636 L X X All Switches Open H L L D1 to S1A, D2 to S2A H L H D1 to S1B, D2 to S2A H H L D1 to S1A, D2 to S2B H H H D1 to S1B, D2 to S2B Package 14-Pin TSSOP Part Number DG636EQ-T1-E3 16-Pin miniQFN DG636EN-T1-E4 ORDERING INFORMATION Temp. Range - 40 °C to 125 °Ca Notes: a. - 40 °C to 85 °C datasheet limits apply. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Limit V+ to VGND to VDigital Inputsa, Unit 14 7 VS, VD Continuous Current (Any Terminal) 30 Peak Current, S or D (Pulsed 1 ms, 10 % Duty Cycle) 100 Storage Temperature Power Dissipation (Package)b Thermal Resistance (Package)b V (V-) - 0.3 to (V+) + 0.3 or 30 mA, whichever occurs first - 65 to 150 14-Pin TSSOPc 450 16-Pin miniQFNd, e 525 14-Pin TSSOP 178 16-Pin miniQFN 152 mA °C mW °C/W Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC board. c. Derate 5.6 mW/°C above 70 °C. d. Derate 6.6 mW/°C above 70 °C. e. Manual soldering with iron is not recommended for leadless components. The miniQFN-16 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper lip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. www.vishay.com 2 Document Number: 69901 S-80239-Rev. B, 04-Feb-08 New Product DG636 Vishay Siliconix SPECIFICATIONS FOR DUAL SUPPLIES Parameter Symbol Test Conditions Unless Otherwise Specified V+ = 5 V, V- = - 5 V VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b - 40 to 125 °C Typ.c Min.d - 40 to 85 °C Max.d Min.d 5 -5 Max.d Unit 5 V Analog Switch On-Resistance On-Resistance Match On-Resistance Flatness VANALOG Full rDS(on) IS = 1 mA, VD = - 3 V, 0 V, + 3 V Room Full 70 115 160 115 140 ΔrON IS = 1 mA, VD = ± 3 V Room Full 1 5 6.5 5 6.5 rFLATNESS IS = 1 mA, VD = - 3 V, 0 V, + 3 V Room Full 10 20 33 20 22 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 IS(off) Switch Off Leakage Current ID(off) V+ = 5.5 V, V- = - 5.5 V VD = ± 4.5 V, VS = 4.5 V ± Analog Signal Rangee -5 ID(on) V+ = 5.5 V, V- = - 5.5 V, VS = VD = ± 4.5 V Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Input Current, VIN Low IIL VIN A0, A1 and ENABLE Under Test = 0.8 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Current, VIN High IIH VIN A0, A1 and ENABLE Under Test = 2.0 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Capacitancee CIN f = 1 MHz Room 3.4 tTRANS VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V, RL = 300 Ω, CL = 35 pF Room Full 20 70 105 70 80 Room Full 16 60 90 60 65 Room Full 15 52 76 52 56 Room Full 15 Channel On Leakage Current Ω nA Digital Control µA pF Dynamic Characteristics Transition Time Turn-On Time tON Turn-Off Time tOFF Break-Before-Make Time Delay Charge Injection Off Isolation Bandwidth tD e e e Channel-to-Channel Crosstalke Source Off Capacitancee Drain Off Capacitance e Channel On Capacitancee Total Harmonic Distortione RL = 300 Ω, CL = 35 pF VS = ± 3 V VS = 3 V RL = 300 Ω, CL = 35 pF 5 ns 5 Q Vg = 0 V, Rg = 0 Ω, CL = 1 nF Room 0.36 pC OIRR RL = 50 Ω, CL = 5 pF, f = 10 MHz Room - 58 dB BW RL = 50 Ω Room 610 MHz XTALK RL = 50 Ω, CL = 5 pF, f = 10 MHz Room - 88 dB CS(off) Room 2.1 CD(off) Room 4.2 Room 11.3 Room 0.01 Room Full 0.001 Room Full - 0.001 - 0.5 -1 - 0.5 -1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 f = 1 MHz CD(on) THD Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Ω pF % Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current Document Number: 69901 S-80239-Rev. B, 04-Feb-08 IGND VIN = 0 V, or V+ 0.5 1 0.5 1 µA www.vishay.com 3 New Product DG636 Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY - 40 to 125 °C Test Conditions Unless Otherwise Specified V+ = 5 V, V- = 0 V Parameter Symbol VIN A0, A1 and ENABLE = 2.0 V, 0.8 Va Temp.b Typ.c Min.d Max.d - 40 to 85 °C Min.d Max.d Unit V Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match VANALOG Full 5 5 rDS(on) IS = 1 mA, VD = + 3.5 V Room Full 120 170 250 170 200 ΔrON IS = 1 mA, VD = + 3.5 V Room Full 3 5 12 5 10 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 IS(off) Switch Off Leakage Current ID(off) V+ = 5.5 V, V- = 0 V VD = 1 V/4.5 V, VS = 4.5 V/1 V ID(on) V+ = 5.5 V, V- = 0 V VS = VD = 1 V/4.5 V Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Input Current, VIN Low IL VIN A0, A1 and ENABLE Under Test = 0.8 V Full 0.005 - 0.1 0.1 - 0.1 0.1 Input Current, VIN High IH VIN A0, A1 and ENABLE Under Test = 2.0 V Full 0.005 - 0.1 0.1 - 0.1 0.1 CIN f = 1 MHz Room 4.3 Room Full 36 75 120 75 95 Room Full 30 70 102 70 80 47 88 47 63 Channel On Leakage Current Ω nA Digital Control Input Capacitance µA pF Dynamic Characteristics Transition Time tTRANS Enable Turn-On Time tON(EN) Enable Turn-Off Time tOFF(EN) Room Full 17 tBMM Room Full 23 CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V Full 0.1 f = 10 MHz, RL = 50 Ω, CL = 5 pF Room - 58 Room - 81 Break-Before-Make-Time Charge Injection Q VS(CLOSE) = 3 V, VS(OPEN) = 0.0 V, RL = 300 Ω, CL = 35 pF 5 ns 5 pC Off-Isolatione OIRR Crosstalke XTALK Bandwidthe BW RL = 50 Ω Room 520 MHz Total Harmonic Distortion THD Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Ω Room 0.009 % Source Off Capacitancee CS(off) f = 1 MHz Room e Drain Off Capacitance CD(off) Channel On Capacitancee CD(on) dB 2.5 6.4 pF 11.3 Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current www.vishay.com 4 IGND VIN = 0 V, or V+ Room Full 0.001 0.5 1 0.5 1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 µA Document Number: 69901 S-80239-Rev. B, 04-Feb-08 New Product DG636 Vishay Siliconix SPECIFICATIONS FOR SINGLE SUPPLY - 40 to + 125 °C - 40 to + 85 °C Test Conditions Unless Otherwise Specified V+ = 3 V, V- = 0 V Parameter Symbol VIN A0, A1 and ENABLE = 1.4 V, 0.6 Va Temp.b Typ.c Min.d Max.d Min.d Max.d Unit V Analog Switch Analog Signal Rangee On-Resistance On-Resistance Match VANALOG Full 3 3 rDS(ON) IS = 1 mA, VD = + 1.5 V Room Full 200 245 325 245 290 ΔrON IS = 1 mA, VD = + 1.5 V Room Full 5 6 13 11 6 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 IS(off) Switch Off Leakage Current ID(off) V+ = 3.0 V, V- = 0 V VD = 1 V/3.0 V, VS = 3.0 V/1 V ID(on) V+ = 3.0 V, V- = 0 V VS = VD = 1 V/3.0 V Room Full ± 0.01 - 0.1 - 18 0.1 18 - 0.1 - 0.5 0.1 0.5 Input Current, VIN Low IL VIN A0, A1 and ENABLE Under Test = 0.6 V Full 0.005 -1 1 -1 1 Input Current, VIN High IH VIN A0, A1 and ENABLE Under Test = 1.4 V Full 0.005 -1 1 -1 1 CIN f = 1 MHz Room 4.3 Room Full 95 130 190 130 160 Room Full 77 108 161 108 131 76 112 76 88 Channel On Leakage Current Ω nA Digital Control Input Capacitance µA pF Dynamic Characteristics Transition Time tTRANS Enable Turn-On Time tON(EN) Enable Turn-Off Time tOFF(EN) Room Full 35 tBMM Room Full 45 CL = 1 nF, RGEN = 0 Ω, VGEN = 0 V Full 1.2 f = 10 MHz, RL = 50 Ω, CL = 5 pF Room - 57 Room - 93 Break-Before-Make-Time Charge Injection Q VS(CLOSE) = 3.0 V, VS(OPEN) = 0.0 V, RL = 300 Ω, CL = 35 pF 5 ns 5 pC Off-Isolatione OIRR Crosstalke XTALK Bandwidthe BW RL = 50 Ω Room 442 MHz Total Harmonic Distortion THD Signal = 1 VRMS, 20 Hz to 20 kHz, RL = 600 Ω Room 0.09 % Source Off Capacitancee CS(off) f = 1 MHz Room Drain Off Capacitance e Channel On Capacitancee CD(off) dB 2.5 CD(on) 6.4 pF 11.7 Power Supplies Power Supply Current I+ Negative Supply Current I- Ground Current IGND VIN = 0 V, or V+ Room Full 0.001 0.5 1 0.5 1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 Room Full - 0.001 - 0.5 -1 - 0.5 -1 µA Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Document Number: 69901 S-80239-Rev. B, 04-Feb-08 www.vishay.com 5 New Product DG636 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C 350 160 T = 25 °C IS = 1 mA VCC = 2.7 V 300 VCC = 3.0 V 200 VCC = 5.0 V 150 VCC = 13.2 V 100 50 V+ = + 5.0 V V- = - 5.0 V 100 80 60 40 T = 25 °C IS = 1 mA 20 0 -8 0 0 2 4 6 8 10 12 14 -6 -4 -2 0 2 4 6 8 VD - Analog Voltage (V) VD - Analog Voltage (V) On-Resistance vs. VD (Single Supply Voltage) On-Resistance vs. VD (Dual Supply Voltage) 500 400 V+ = 3.0 V, V- = 0 V IS = 1 mA 450 + 125 °C V+ = 5.0 V, V- = 0 V IS = 1 mA 350 + 25 °C 400 - 40 °C rON - On-Resistance (Ω) rON - On-Resistance (Ω) V+ = + 6.2 V V- = - 6.2 V 120 250 rON - On-Resistance (Ω) rON - On-Resistance (Ω) V+ = + 2.7 V V- = - 2.7 V 140 350 + 85 °C 300 250 200 150 300 250 + 125 °C + 85 °C 200 + 25 °C - 40 °C 150 100 100 50 50 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature 2.5 3 3.5 4 4.5 5 On-Resistance vs. Analog Voltage and Temperature 10 mA 250 V+ = 5.0 V, V- = - 5.0 V IS = 1 mA 225 1 mA 200 V+ = + 5.0 V V- = - 5.0 V 100 µA 175 Supply Current (A) rON - On-Resistance (Ω) 2 VD - Analog Voltage (V) + 125 °C 150 + 85 °C 125 + 25 °C - 40 °C 100 75 10 µA I+ 1 µA I100 nA 1 nA 50 100 pA 25 10 pA 0 -5 IGND 1 pA -4 -3 -2 -1 0 1 2 3 4 5 VD - Analog Voltage (V) On-Resistance vs. Analog Voltage and Temperature www.vishay.com 6 10 100 1K 10K 100K 1M 10M Input Switching Frequency (Hz) Supply Current vs. Input Switching Frequency Document Number: 69901 S-80239-Rev. B, 04-Feb-08 New Product DG636 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C 10000 100000 V+ = 13.2 V V- = 0 V V+ = + 5.0 V V- = - 5.0 V ID(off) 10000 Leakage Current (pA) Leakage Current (pA) 1000 1000 ID(off) 100 ID(on) 1 - 60 - 40 - 20 0 20 40 60 80 ID(on) 10 IS(off) 10 IS(off) 100 1 - 60 - 40 - 20 100 120 140 0 Leakage Current vs. Temperature 60 80 100 120 140 0.8 LOSS 0 T = 25 °C CL = 1 nF 0.6 Q - Charge Injection (pC) - 10 LOSS, OIRR, XTALK (dB) 40 Leakage Current vs. Temperature 10 - 20 - 30 20 Temperature (°C) Temperature (°C) V+ = ± 5.0 V RL = 50 Ω - 40 - 50 OIRR - 60 XTALK - 70 0.4 0.2 V+ = + 3.0 V V- = 0 V 0 V+ = + 5.0 V V- = - 5.0 V - 0.2 V+ = + 5.0 V V- = 0 V - 0.4 - 80 - 0.6 - 90 - 100 100K 1M 10M 100M - 0.8 -5 1G -4 -3 -2 1 2 3 4 5 Charge Injection vs. Analog Voltage 3.0 100 RL = 600 Ω VSignal = 1 VRMS 2.5 VT - Switching Threshold (V) 10 THD (%) 0 VS - Analog Voltage (V) Frequency (Hz) Insertion Loss, Off-Isolation, Crosstalk vs. Frequency 1 V+ = 3.0 V V+ = 5.0 V V± = ± 5.0 V 0.1 0.01 0.001 10 -1 2.0 1.5 1.0 0.5 0.0 100 1000 10000 100000 0 2 4 6 8 10 12 Frequency (Hz) V+ - Supply Voltage (V) Total Harmonic Distortion vs. Frequency Switching Threshold vs. Supply Voltage Document Number: 69901 S-80239-Rev. B, 04-Feb-08 14 www.vishay.com 7 New Product DG636 Vishay Siliconix TEST CIRCUITS V+ t r < 5 ns t f < 5 ns VCC V+ 50 Ω A0 S1A or S2A A1 S2A or S2B VS1A or VS2A VA0,A1 50 % 0V VS2A or VS2B VS1A or VS2A V+ VO D1 or D2 ENABLE V- GND 300 Ω VO 50 % 90 % 35 pF t TRANS t TRANS V- Figure 1. Transition Time V+ A0 t r < 5 ns t f < 5 ns VCC V+ V+ S1A or S2A VENABLE 50 % 0V A1 S1B or S2B VS1A or VS2A 50 Ω GND VO D1 or D2 ENABLE V- 300 Ω 90 % 90 % VO 50 % 35 pF 0V t OFF t ON V- S1A or S2A ON Figure 2. Enable Switching Time V+ tr < 5 ns tf < 5 ns VCC V+ SxA - SxB A0 50 Ω V+ VA0,A1 50 % 0V A1 VSxA or VSxB 80 % + V GND VO D1 or D2 ENABLE V- 300 Ω VO 35 pF 0V V- tD Figure 3. Break-Before-Make www.vishay.com 8 Document Number: 69901 S-80239-Rev. B, 04-Feb-08 New Product DG636 Vishay Siliconix TEST CIRCUITS V+ t r < 5 ns t f < 5 ns V+ VCC A0 Channel Select ON OFF VENABLE A1 OFF 0V Rg SxA or SxB VO Vg V GND ΔVO VO D1 or D2 ENABLE - CL 1 nF Charge Injection = ΔVO X CL V- Figure 4. Charge Injection V+ V+ Network Analyzer V+ Network Analyzer V+ VIN A0 A0 S1A or S2A A1 Vg Rg = 50 Ω VIN SxA or SxB A1 VOUT V+ VOUT D1 or D2 ENABLE D1 or D2 ENABLE V- GND Rg = 50 Ω Vg 50 Ω GND V- V- 50 Ω V- Insertion Loss = 20 log VOUT Off Isolation = 20 log VIN Figure 5. Insertion Loss VOUT VIN Figure 6. Off-Isolation V+ V+ Network Analyzer V+ S1A or S2A A0 VIN A1 Vg Rg = 50 V+ Channel Select A0 S1A or S2A | to | S2A or S2B A1 D1 or D2 VOUT 50 Ω V+ Impedance Analyzer S1B or S2B ENABLE V- GND 50 Ω V+ D1 or D2 ENABLE GND V- V- Cross Talk = 20 log VOUT VIN Figure 7. Crosstalk V- Figure 8. Source/Drain Capacitance Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?69901. Document Number: 69901 S-80239-Rev. B, 04-Feb-08 www.vishay.com 9 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1