EC5822 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier General Description Features The EC5822 is wideband, low-noise, low-distortion dual operational amplifier, that offer rail-to-rail inputs/outputs and single-supply operation down to 2.2V. They draw 1.6mA of quiescent supply current while featuring ultra-low distortion(0.0002% THD+N), as well as low input voltage-noise density (15nV/ Hz) and low input current-noise density (0.5fA/ Hz). These features make the devices an ideal choice for applications that require low distortion and/or low noise. These amplifiers have inputs and outputs which swing railto-rail and their input common-mode voltage range includes ground. The maximum input offset of these amplifiers is less than 5mV. The EC5822 are unity-gain stable with a gain-bandwidth product of 10MHz.The EC5822 is available in SOP8 and MSOP8 packages. The extended temperature range of -40°C to +125°C over all supply voltages offers additional design flexibility. ● Single-Supply Operation from +2.2V ~ +5.5V ● Rail-to-Rail Input / Output ● Gain-Bandwidth Product: 10MHz (Typ.) ● Low Input Bias Current: 10pA (Typ.) ● Low Offset Voltage：5mV(Max.) ● Quiescent Current: 800μA per Amplifier (Typ.) ● Operating Temperature: -40°C ~ +125°C ● Available in SOP8 and MSOP8 Packages Applications ● Portable Equipment ● Mobile Communications ● Smoke Detector ● Sensor Interface ● Medical Instrumentation ● Battery-Powered Instruments ● Handheld Test Equipment Pin Assignments Figure 1. Pin Assignment Diagram (SOP8 and MSOP8 Package) E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 12 3K29N-Rev.P001 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier EC5822 Ordering Information EC5822NN XX X R1：MSOP-8L M1：SOP-8L Part Number Package Marking EC5822NNR1R MSOP-8L 5822 LLLLL YYWWT SOP-8L EC5822 LLLLL YYWWT EC5822NNM1R Marking Information 1. LLLLL：Last five Number of Lot No 2. YY：Year Code 3. WW：Week Code 4. T：Internal Tracking Code Application Information Size EC5822 series op amps are unity-gain stable and suitable for a wide range of general-purpose applications. The small footprints of the EC5822 series packages save space on printed circuit boards and enable the design of smaller electronic products. Power Supply Bypassing and Board Layout EC5822 series operates from a single 2.2V to 5.5V supply or dual ±1.1V to ±2.75V supplies. For best performance, a 0.1μF ceramic capacitor should be placed close to the VDD pin in single supply operation. For dual supply operation, both VDD and VSS supplies should be bypassed to ground with separate 0.1μF ceramic capacitors. Low Supply Current The low supply current (typical 800μA) of EC5822 series will help to maximize battery life. They are ideal for battery powered systems Operating Voltage EC5822 series operate under wide input supply voltage (2.2V to 5.5V). In addition, all temperature specifications apply from -40℃ to +125℃. Most behavior remains unchanged throughout the full operating voltage range. These guarantees ensure operation throughout the single Li-Ion battery lifetime Rail-to-Rail Input The input common-mode range of EC5822 series extends 100mV beyond the supply rails (VSS-0.1V to VDD+0.1V). This is achieved by using complementary input stage. For normal operation, inputs should be limited to this range. E-CMOS Corp. (www.ecmos.com.tw) Page 2 of 12 3K29N-Rev.P001 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier EC5822 Rail-to-Rail Output Rail-to-Rail output swing provides maximum possible dynamic range at the output. This is particularly important when operating in low supply voltages. The output voltage of EC5822 series can typically swing to less than 10mV from supply rail in light resistive loads (>100kΩ), and 60mV of supply rail in moderate resistive loads (10kΩ). Capacitive Load Tolerance The EC5822 series can directly drive 250pF capacitive load in unity-gain without oscillation. Increasing the gain enhances the amplifier’s ability to drive greater capacitive loads. In unity-gain configurations, the capacitive load drive can be improved by inserting an isolation resistor RISO in series with the capacitive load, as shown in Figure 2. Figure 2. Indirectly Driving a Capacitive Load Using Isolation Resistor The bigger the RISO resistor value, the more stable VOUT will be. However, if there is a resistive load RL in parallel with the capacitive load, a voltage divider (proportional to R ISO/RL) is formed, this will result in a gain error. The circuit in Figure 3 is an improvement to the one in Figure 2. RF provides the DC accuracy by feed-forward the VIN to RL. CF and RISO serve to counteract the loss of phase margin by feeding the high frequency component of the output signal back to the amplifier’s inverting input, thereby preserving the phase margin in the overall feedback loop. Capacitive drive can be increased Figure 3. Indirectly Driving a Capacitive Load with DC Accuracy E-CMOS Corp. (www.ecmos.com.tw) Page 3 of 12 3K29N-Rev.P001 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier EC5822 Differential amplifier The differential amplifier allows the subtraction of two input voltages or cancellation of a signal common the two inputs. It is useful as a computational amplifier in making a differential to single-end conversion or in rejecting a common mode signal. Figure 4. shown the differential amplifier using EC5822. Figure 4. Differential Amplifier If the resistor ratios are equal (i.e. R1=R3 and R2=R4), then Instrumentation Amplifier The input impedance of the previous differential amplifier is set by the resistors R1, R2, R3, and R4. To maintain the high input impedance, one can use a voltage follower in front of each input as shown in the following two instrumentation amplifiers. Three-Op-Amp Instrumentation Amplifier The dual EC5822 can be used to build a three-op-amp instrumentation amplifier as shown in Figure 5. Figure 5. Three-Op-Amp Instrumentation Amplifier E-CMOS Corp. (www.ecmos.com.tw) Page 4 of 12 3K29N-Rev.P001 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier EC5822 The amplifier in Figure 5 is a high input impedance differential amplifier with gain of R2/R1. The two differential voltage followers assure the high input impedance of the amplifier. Two-Op-Amp Instrumentation Amplifier EC5822 can also be used to make a high input impedance two-op-amp instrumentation amplifier as shown in Figure 6. Figure 6. Two-Op-Amp Instrumentation Amplifier Where R1=R3 and R2=R4. If all resistors are equal, then Vo=2(VIP-VIN) Single-Supply Inverting Amplifier The inverting amplifier is shown in Figure 6. The capacitor C1 is used to block the DC signal going into the AC signal source VIN.The value of R1 and C1 set the cut-off frequency to ƒC=1/(2πR1C1). The DC gain is defined by VOUT=-(R2/R1)VIN Figure 7. Single Supply Inverting Amplifier E-CMOS Corp. (www.ecmos.com.tw) Page 5 of 12 3K29N-Rev.P001 EC5822 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier Low Pass Active Filter The low pass active filter is shown in Figure 8. The DC gain is defined by –R2/R1. The filter has a -20dB/ decade roll-off after its corner frequency ƒC=1/(2πR3C1). Figure 8. Low Pass Active Filter Sallen-Key 2nd Order Active Low-Pass Filter EC5822 can be used to form a 2 nd order Sallen-Key active low-pass filter as shown in Figure 9. The transfer function from VIN to VOUT is given by Where the DC gain is defined by ALP=1+R3/R4, and the corner frequency is given by The pole quality factor is given by Let R1=R2=R and C1=C2=C, the corner frequency and the pole quality factor can be simplified as below And Q=2-R3/R4 E-CMOS Corp. (www.ecmos.com.tw) Page 6 of 12 3K29N-Rev.P001 EC5822 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier Figure 9. Sanllen-Key 2nd Order Active Low-Pass Filter Sallen-Key 2nd Order high-Pass Active Filter The 2 nd order Sallen-key high-pass filter can be built by simply interchanging those frequency selective components R1, R2, C1,and C2 as shown in Figure 10. Figure 10. Sanllen-Key 2nd Order Active High-Pass Filter E-CMOS Corp. (www.ecmos.com.tw) Page 7 of 12 3K29N-Rev.P001 EC5822 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier Electrical Characteristics Absolute Maximum Ratings Condition Min Max -0.5V +7V Analog Input Voltage (IN+ or IN-) Vss-0.5V VDD+0.5V PDB Input Voltage Vss-0.5V +7V -40°C +125°C Power Supply Voltage (VDD to Vss) Operating Temperature Range Junction Temperature +150°C Storage Temperature Range -65°C Lead Temperature (soldering, 10sec) +150°C +300°C Package Thermal Resistance (TA=+25℃) SOP8, θJA 130°C MSOP8, θJA 210°C Note: Stress greater than those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions outside those indicated in the operational sections of this specification are not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. E-CMOS Corp. (www.ecmos.com.tw) Page 8 of 12 3K29N-Rev.P001 EC5822 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier Electrical Characteristics (VDD = +5V, Vss = 0V, VCM = 0V, VOUT = VDD/2, RL=100K tied to VDD/2, SHDNB = VDD,TA = -40°C to +125°C, unless otherwise noted. Typical values are at T A =+25°C.) (Notes 1) Parameter Supply-Voltage Range Quiescent Supply Current (per Symbol VDD IDD Amplifier) Input Offset Voltage Input Offset Voltage Tempco VOS Conditions Min. Typ. Max. Units 2.2 - 5.5 V VDD = 3V - 0.8 - VDD = 5V - 0.8 1.2 TA = +25°C - - 5 TA = -40°C to +85°C - - - TA = -40°C to +125°C - - 1.5 - 0.3 6 μV/°C Guaranteed by the PSRR test ΔVOS/ΔT mA mV Input Bias Current IB (Note 3) - 1 100 pA Input Offset Current IOS (Note 3) - 1 100 pA -0.2 - VDD+0.2 0 - VDD0 - 75 - 65 80 - - 65 - 75 90 - 90 100 - 75 85 - 55 65 - - 10 35 - 10 30 Input Common-Mode Voltage VCM Range Common-Mode Rejection Ratio Guaranteed by the TA = 25°C CMRR test TA = -40C to +125C CMRR Vss-0.2VVCMVDD+0.2V V TA = +25°C Vss≤VCM≤5V dB TA = +25°C Vss-0.2VVCMVDD+0.2V TA = -40°C to +125°C Power-Supply Rejection Ratio Open-Loop Voltage Gain PSRR AV VDD = +2.2V to +5.5V RL=100k to VDD/2, 100mV≤VO≤VDD -125mV RL=1k to VDD/2, 200mV≤VO≤VDD -250mV RL=500 to VDD/2, 350mV≤VO≤VDD -500mV Output Voltage Swing VOUT |VIN+-VIN-| 10mV dB dB VDD-VOH RL = 10k to VDD/2 VOL-VSS mV |VIN+-VIN-| 10mV - 80 200 - 50 150 100 350 VDD-VOH RL = 1k to VDD/2 VOL-VSS |VIN+-VIN-| 10mV VDD-VOH E-CMOS Corp. (www.ecmos.com.tw) Page 9 of 12 3K29N-Rev.P001 EC5822 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier RL = 500 to VDD/2 80 260 - 50 - mA VOL-VSS Output Short-Circuit Current ISC Sinking or Sourcing PDB Logic Low VIL - - 0.8 V PDB Logic High VIH 2 - - V Turn-On Time TON - 2.2 - μs Turn-Off Time TOFF - 0.8 - μs Output Leakage Current ILEAK - 0.001 1.0 μA Shutdown Mode (PDB = VSS), VOUT = VSS to VDD Input Capacitance Gain Bandwidth Product Slew Rate 10 CIN pF GBW AV = +1V/V - 10 - MHz SR AV = +1V/V - 4.5 - V/μs Av = +1V/V - 0.4 - MHz Full Power Bandwidth Phase Margin m Av = +1V/V - 55 - deg Gain Margin Gm Av = +1V/V - 12 - dB Settling Time tS - 1 - μs - 200 - - 5 - ƒ = 10Hz - 60 - ƒ = 1kHz - 30 - ƒ = 30kHz - 15 - To 0.01%, VOUT = 2V step AV = +1V/V Capacitive-Load Stability CLOAD No sustained oscillations. pF Av = +1V/V Peak-to-Peak Input Noise en(p-p) ƒ = 0.1Hz to 10Hz Vp-p Voltage (Note 5) Input Voltage Noise Density Input Current Noise Density Total Harmonic Distortion plus Noise en in THD+N ƒ = 1kHz nV/Hz fA/Hz VOUT = 2Vp-p, Av = +1V/V, ƒ = 1kHz - 0.0001 - RL = 10k to GND ƒ = 20kHz - 0.002 - Av = +1V/V, ƒ = 1kHz - 0.0002 - RL = 1k to GND ƒ = 20kHz - 0.004 - % VOUT = 2Vp-p, Note 1: All devices are 100% production tested at TA = +25°C; all specifications over the automotive temperature range is guaranteed by design, not production tested. Note 2: Parameter is guaranteed by design. Note 3: Peak-to-peak input noise voltage is defined as six times RMS value of input noise voltage. E-CMOS Corp. (www.ecmos.com.tw) Page 10 of 12 3K29N-Rev.P001 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier EC5822 Package Information SOP-8 SYMBOLS A A1 b D E E1 e L L1 ZD Θ DIMENSIONS IN MILLIMETER S MIN NOM MAX 1.35 -1.75 0.10 -0.25 0.33 -0.51 4.80 -5.00 5.80 -6.20 3.80 -4.00 1.27 BSC. 0.38 -1.27 0.25 BSC. 0.545 REF. 0 -8° DIMENSIONS IN INCHES MIN NOM MAX 0.053 -0.069 0.004 -0.010 0.013 -0.020 0.189 -0.197 0.228 -0.244 0.150 -0.157 0.050 BSC. 0.015 0.050 0.010 BSC. 0.021 REF. 0 -8° Note: 1. Controlling Dimension:MM 2. Dimension D and E1 do not include Mold protrusion 3. Dimension b does not include dambar protrusion/intrusion. 4. Refer to Jedec standard MS-012 5. Drawing is not to scale E-CMOS Corp. (www.ecmos.com.tw) Page 11 of 12 3K29N-Rev.P001 EC5822 10MHz, Low-Power, CMOS, Rail-to-Rail Dual Operational Amplifier Package Information MSOP-8 SYMBOLS DIMENSIONS IN MILLIMETERS MIN NOM MAX A --1.10 A1 0.05 -0.15 A2 0.75 0.85 0.95 b 0.25 -0.40 C 0.13 -0.23 D 2.90 3.00 3.10 E 2.90 3.00 3.10 E1 4.90 BSC e 0.65 BSC L --0.55 0 -Θ 7° DIMENSIONS IN INCHES MIN NOM MAX --0.043 0.002 -0.006 0.030 0.033 0.037 0.010 -0.016 0.005 -0.009 0.114 0.118 0.122 0.114 0.118 0.122 0.193 BSC 0.026 BSC --0.022 0 -7° Note: 1. Controlling Dimension: MM 2. Dimension D and E1 do not include Mold protrusion 3. Refer to Jedec standard MO187 4. Drawing is not to scale E-CMOS Corp. (www.ecmos.com.tw) Page 12 of 12 3K29N-Rev.P001