Eudyna FLL21E180IU High voltage - high power gaas fet Datasheet

FLL21E180IU
High Voltage - High Power GaAs FET
FEATURES
・High Voltage Operation : VDS=28V
・High Gain: 15.0dB(typ.) at Pout=46dBm(Avg.)
・Broad Frequency Range : 2100 to 2200MHz
・Proven Reliability
DESCRIPTION
The FLL21E180IU is a high power GaAs FET that offers
high efficiency, ease of matching, greater consistency and
broad bandwidth for high power L-band amplifiers.
This device is target for high voltage, low current operation in
digitally modulated base station. This product is ideally suited
for W-CDMA base station amplifiers while offering high gain long
term reliability and ease for use.
ABSOLUTE MAXIMUM RATINGS
Item
Symbol
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
VDS
VGS
Pt
T stg
Tch
Condition
Tc=25 oC
Rating
32
-3
230
-65 to +175
200
Unit
V
V
W
oC
oC
RECOMMENDED OPERATING CONDITION(Case Temperature Tc=25 oC)
Item
DC Input Voltage
Forward Gate Current
Reverse Gate Current
Channel Temperature
Symbol
VDS
I GF
IGR
T ch
Condition
Limit
Unit
RG=1 Ω
RG =1 Ω
<28
<705
>-64
155
V
mA
mA
oC
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25 o C)
Item
Symbol Condition
min.
Pinch-Off Voltage
Vp
VDS=5V I DS=150mA
Gate-Source Breakdown Voltage
VGSO
IGS=-1.5mA
3rd Order Inter modulation Distortion
IM3
VDS=28V
Power Gain
Gp
I DS(DC) =1.7A
Drain Efficiency
ηd
Pout=46dBm(Avg.)
Adjacent Channel Leakage Power Ratio
ACLR
Thermal Resistance
Rth
note
Channel to Case
-0.1
1
-0.2
-0.5
-5
Unit
V
V
-
-34
-30
dBc
14.0
15.0
-
dB
-
26.0
-
%
-
-35
-
-
Note 1 : IM3 ACLR and Gain test condition as follows:
IM3 & Gain : fo=2.1325GHz, f1=2.1475GHz W-CDMA(3GPP3.4 12-00) BS-164ch
non clipping modulation measured over 3.84MHz at fo-15MHz and fI+15MHz.
ACLR : fo=2.1325GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch non clipping modulation,
measured over 3.84MHz at fo+/-5MHz.
Edition 1.2
Mar 2004
Limit
Typ. Max.
0.55
0.65
dBc
oC
/W
FLL21E180IU
High Voltage - High Power GaAs FET
Output Power vs. Input Power
@VDS =28V I DS=2A f=2.14GHz
Pulse RF Test : P.W. 1msec ,duty=10%
54
54
52
50
48
46
44
42
40
38
36
34
32
52
Output Power [dBm]
2
2.05
2.1
2.15
2.2
2.25
48
46
44
42
40
38
36
2.3
34
Frequency [GHz]
18 20 22 24 26 28 30 32 34 36 38 40 42
Pin=20dBm
Pin=25dBm
Pin=30dBm
Pin=36dBm
Pin=39.5dBm
P1dB
Input Power [dBm]
Two-Carrier IMD(ACLR), Drain Efficiency vs. Output Power
@VDS =28V I DS=1.7A fo=2.1325, f1=2.1475GHz
W-CDMA 3-GPP BS-1 64ch Modulation
Single-Carrier ACLR , Drain Efficiency vs. Output Power
@VDS =28V I DS=1.7A fo=2.1325GHz
W-CDMA 3GPP BS-1 64ch Modulation
-25
35
-25
35
-30
30
-30
30
-35
25
-35
25
-40
20
-40
20
-45
15
-45
15
-50
10
-50
10
-55
5
-55
5
0
-60
-60
ACLR [dBc]
Drain Efficiency [%]
IMD [dBc]
50
0
28 30 32 34 36 38 40 42 44 46 48
28 30 32 34 36 38 40 42 44 46 48
Output Power [dBm]
Output Power [dBm]
IM3
IM5
Drain Efficiency
+/-5MHz
2
+/-10MHz
Drain Efficiency
Drain Efficiency [%]
Output Power [dBm]
Output Power vs. Frequency
@VDS =28V I DS=1.7A
Pulse RF Test : P.W. 1msec ,duty=10%
FLL21E180IU
High Voltage - High Power GaAs FET
S-Parameters @VDS =28V I DS=850mA f=1.7 to 3 GHz 1port Parameters
+50j
+25j
+100j
10Ω
25Ω
50Ω
2.0GHz
+10j
+250j
100Ω
∞
0
2.2
2.1
2.2
2.0GHz
-250j
-10j
2.1
-25j
-100j
-50j
S11
S22
+90°
2.1
2.0GHz
2.2
6
±180° 8
Scale for |S21|
0.3
0.4
-90°
Scale for |S 12|
0°
S12
S21
3
!freq(GHz)S11(mag) S11(ang) S21(mag) S21(ang) S12(mag) S12(ang) S22(mag) S22(ang)
0.1 0.967 177.2 1.369 157.7 0.001
51.2 0.774 -165.8
0.2 0.941 175.5 1.739 115.0 0.002
32.4 0.912 -173.7
0.3 0.942 175.3 1.321
68.1 0.003
10.1 0.907 -178.7
0.4 0.949 173.9 0.882
40.6 0.002
19.4 0.913 179.1
0.5 0.952 171.9 0.611
21.9 0.001
-28.8
0.921 177.3
1 0.945 161.9 0.314
-21.0 0.002
35.5 0.934 167.6
1.1 0.946 158.7 0.325
-28.5 0.002
45.3 0.929 165.1
1.2 0.945 155.4 0.359
-35.4 0.004
26.5 0.930 162.7
1.3 0.937 151.4 0.413
-43.8 0.005
40.8 0.931 160.1
1.4 0.927 146.0 0.511
-53.2 0.005
37.8 0.926 157.0
1.5 0.911 139.6 0.670
-64.5 0.007
20.0 0.911 152.9
1.6 0.879 130.2 0.931
-79.0 0.009
1.8
0.886 147.9
1.7 0.823 116.8 1.409
-97.0 0.012
-9.9 0.858 142.1
1.8 0.709
95.2 2.294 -122.0 0.017
-34.6
0.821 133.6
1.9 0.528
55.1 3.916 -158.4 0.023
-71.4
0.755 119.0
1.95 0.430
18.6 5.021 177.5 0.024 -102.7 0.672 106.4
2 0.411
-33.4 6.086 148.8 0.025 -136.5 0.520
88.9
2.05 0.493
-82.7 6.662 116.6 0.023 -175.4 0.273
65.9
2.1 0.584 -117.8 6.406
85.6 0.017 142.4 0.030
-60.7
2.11 0.596 -122.9 6.314
79.7 0.016 126.0 0.071 -108.9
2.12 0.608 -128.2 6.184
74.2 0.015 120.0 0.119 -122.9
2.13 0.615 -132.7 6.062
68.9 0.014 110.5 0.166 -129.9
2.14 0.624 -136.9 5.921
63.5 0.012 101.8 0.212 -135.5
2.15 0.627 -140.7 5.726
58.8 0.013
93.5 0.254 -139.5
2.16 0.632 -144.4 5.583
53.8 0.012
80.1 0.294 -143.5
2.17 0.636 -147.8 5.431
49.2 0.012
71.6 0.332 -147.1
2.18 0.634 -150.7 5.226
45.0 0.012
56.2 0.366 -150.2
2.19 0.640 -153.5 5.122
40.7 0.011
57.9 0.397 -152.7
2.2 0.638 -156.1 4.975
36.8 0.012
39.2 0.428 -155.8
2.25 0.632 -167.2 4.354
18.1 0.011
3.8
0.545 -167.2
2.3 0.618 -175.7 3.859
1.9 0.014
-21.7
0.626 -176.1
2.35 0.594 177.2 3.517
-12.8 0.015
-37.4
0.687 175.7
2.4 0.560 170.7 3.317
-26.9 0.017
-58.6
0.725 168.6
2.5 0.442 159.1 3.140
-54.8 0.021
-90.4
0.771 154.2
2.6 0.238 158.4 3.187
-87.1 0.025 -120.5 0.783 138.0
2.7 0.225 -130.2 3.095 -124.9 0.029 -159.7 0.736 118.1
2.8 0.521 -129.2 2.670 -164.1 0.027 163.0 0.648
95.0
2.9 0.713 -143.9 2.123 159.6 0.023 131.1 0.568
66.3
3 0.811 -156.1 1.664 126.9 0.018 104.2 0.515
26.4
FLL21E180IU
High Voltage - High Power GaAs FET
BOARD LAYOUT
<INPUT SIDE>
µ
Ω
Ω
µ
<OUTPUT SIDE>
µ
Ω
Ω
µ
εr=3.5 t=0.6mm
4
FLL21E180IU
High Voltage - High Power GaAs FET
IU Package Outline
Metal-Ceramic Hermetic Package
PIN ASSIGMENT
1,2 : GATE
3 : SOURCE
4.5 : DRAIN
6 : SOURCE
Unit : mm
5
FLL21E180IU
High Voltage - High Power GaAs FET
For further information please contact :
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
Phone: (408) 232-9500
FAX: (408) 428-9111
www.fcsi.fujitsu.com
CAUTION
Fujitsu Compound Semiconductor Products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the
environment.
For safety, observe the following procedures:
・
Do not put these products into the mouth.
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
Phone: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
・
Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these byproducts
are dangerous to the human body if inhaled, ingested, or swallowed.
・
Observe government laws and company regulations when discarding
this product. This product must be discarded in accordance with
methods specified by applicable hazardous waste procedures.
Eudyna Devices Asia Pte. Ltd. Hong Kong Branch
Rm.1101,Ocean Centre, 5 Canton Road, Tsim Sha Tsui Kowloon, Hong kong
Tel: +852-2377-0227
Fax: +852-2377-3921
Eudyna Devices Inc.
1000 Kamisukiahara, showa-cho, Nakakomagun, Yamanashi
409-3883, Japan
(Kokubo Industrial Park)
Tel +81-55-275-4411
Fax +81-55-275-9461
Sales Division
1,Kanai-cho,Sakae-ku,Yokohama,244-0845,Japan
Tel +81-45-853-8156
Fax +81-45-853-8170
6
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