HMC373LP3 / 373LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz AMPLIFIERS - LOW NOISE - SMT 7 Typical Applications Features The HMC373LP3 / HMC373LP3E is ideal for basestation receivers: Noise Figure: 0.9 dB • GSM, GPRS & EDGE Gain: 14 dB • CDMA & W-CDMA Low Loss LNA Bypass Path • Private Land Mobile Radio Single Supply: +5V @ 90 mA Output IP3: +35 dBm 50 Ohm Matched Output Functional Diagram General Description The HMC373LP3 / HMC373LP3E are versatile, high dynamic range GaAs MMIC Low Noise Amplifiers that integrates a low loss LNA bypass mode on the IC. The amplifier is ideal for GSM & CDMA cellular basestation front-end receivers operating between 700 and 1000 MHz and provides 0.9 dB noise figure, 14 dB of gain and +35 dBm IP3 from a single supply of +5V @ 90 mA. Input and output return losses are 28 and 12 dB respectively with the LNA requiring minimal external components to optimize the RF input match, RF ground and DC bias. By presenting an open or short circuit to a single control line, the LNA can be switched into a low 2.0 dB loss bypass mode reducing the current consumption to 10 μA. For applications which require improved noise figure, please see the HMC668LP3(E). Electrical Specifi cations, TA = +25° C, Vdd = +5V LNA Mode LNA Mode Bypass Mode Parameter Units Min. Frequency Range Gain Typ. Max. Min. 810 - 960 11.5 Gain Variation Over Temperature Typ. Max. 700 - 1000 13.5 10.5 14 0.008 0.015 0.008 0.015 0.9 1.3 1.0 1.4 Input Return Loss 28 11 19 17 dB 0.002 20 0.004 dB / °C dB 25 12 20 21 MHz -2.0 30 Reverse Isolation Max. 700 - 1000 25 Output Return Loss 18 Typ. -2.8 Noise Figure Power for 1dB Compression (P1dB)* Min. dB dB dB 30 dBm Saturated Output Power (Psat) 22.5 22 Third Order Intercept (IP3)* (-20 dBm Input Power per tone, 1 MHz tone spacing) 35.5 35 50 dBm 90 90 0.01 mA Supply Current (Idd) dBm * P1dB and IP3 for LNA Mode are referenced to RFOUT while P1dB and IP3 for Bypass Mode are referenced to RFIN. 7 - 60 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC373LP3 / 373LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz GAIN (dB), P1dB (dBm) 0 -10 -20 S21 S11 S22 -40 0.25 1.2 20 1 18 0.8 Gain P1dB 16 0.2 12 0.5 0.75 1 1.25 1.5 1.75 2 4.5 4.75 5 1.5 +25 C +85 C -40 C +25 C +85 C -40 C 1.3 NOISE FIGURE (dB) 18 GAIN (dB) 5.5 LNA Noise Figure vs. Temperature 20 16 14 12 1.1 0.9 0.7 0.75 0.8 0.85 0.9 0.95 0.5 0.7 1 0.75 0.8 0.85 0.9 0.95 1 0.95 1 FREQUENCY (GHz) FREQUENCY (GHz) LNA Gain vs. Vdd LNA Noise Figure vs. Vdd 1.5 20 +4.5 V +5.0 V +5.5 V +4.5 V +5.0 V +5.5 V 1.3 NOISE FIGURE (dB) 18 GAIN (dB) 5.25 Vdd (Vdc) LNA Gain vs. Temperature 16 14 12 10 0.7 0.6 0.4 14 FREQUENCY (GHz) 10 0.7 Noise Figure NOISE FIGURE (dB) RESPONSE (dB) 10 22 AMPLIFIERS - LOW NOISE - SMT 20 -30 7 LNA – Gain, Noise Figure & Power vs. Supply Voltage @ 850 MHz LNA Broadband Gain & Return Loss 1.1 0.9 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 0.5 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 - 61 HMC373LP3 / 373LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz 7 LNA Input Return Loss vs. Temperature LNA Output Return Loss vs. Temperature 0 +25 C +85 C -40 C -4 -10 RETURN LOSS (dB) RETURN LOSS (dB) -5 +25 C +85 C -40 C -15 -20 -25 -30 -8 -12 -16 -35 -40 0.7 0.75 0.8 0.85 0.9 0.95 -20 0.7 1 0.75 FREQUENCY (GHz) COMPRESSION POINT (dBm) 36 34 +25 C +85 C -40 C 32 0.75 0.8 0.85 0.9 0.95 1 21 P1dB 19 +25 C +85 C -40 C 17 15 0.7 1 0.75 38 23 P1dB (dBm) 25 36 34 +4.5 V +5.0 V +5.5 V 0.75 0.8 0.85 0.85 0.9 0.95 1 0.95 1 LNA P1dB vs. Vdd 40 32 0.8 FREQUENCY (GHz) LNA Output IP3 vs. Vdd IP3 (dBm) 0.95 Psat 23 FREQUENCY (GHz) 0.9 FREQUENCY (GHz) 7 - 62 0.9 25 38 30 0.7 0.85 LNA P1dB & Psat vs. Temperature 40 30 0.7 0.8 FREQUENCY (GHz) LNA Output IP3 vs. Temperature IP3 (dBm) AMPLIFIERS - LOW NOISE - SMT 0 21 19 +4.5 V +5.0 V +5.5 V 17 0.95 1 15 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC373LP3 / 373LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Bypass Mode Broadband Insertion Loss & Return Loss LNA Reverse Isolation vs. Temperature +25 C +85 C -40 C -10 RESPONSE (dB) ISOLATION (dB) -5 -15 -20 -10 -20 S21 S11 S22 -30 -25 0.75 0.8 0.85 0.9 0.95 -40 0.25 1 0.5 FREQUENCY (GHz) 1.25 1.5 1.75 2 Bypass Mode Input Return Loss vs. Temperature 0 0 -1 -10 RETURN LOSS (dB) INSERTION LOSS (dB) 1 FREQUENCY (GHz) Bypass Mode Insertion Loss vs. Temperature -2 -3 -4 -5 0.7 0.75 +25 C +85 C -40 C -20 -30 AMPLIFIERS - LOW NOISE - SMT 0 0 -30 0.7 7 -40 0.75 0.8 0.85 0.9 0.95 -50 0.7 1 0.75 FREQUENCY (GHz) 0.8 0.85 0.9 0.95 1 0.95 1 FREQUENCY (GHz) Bypass Mode Output Return Loss vs. Temperature Bypass Mode Input IP3 vs. Temperature 55 0 -10 +25 C +85 C -40 C -15 INPUT IP3 (dBm) RETURN LOSS (dB) -5 -20 -25 -30 50 45 +25 C +85 C -40 C 40 -35 -40 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) 0.95 1 35 0.7 0.75 0.8 0.85 0.9 FREQUENCY (GHz) For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 - 63 HMC373LP3 / 373LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz AMPLIFIERS - LOW NOISE - SMT 7 Absolute Maximum Ratings Drain Bias Voltage (Vdd) RF Input Power (RFIN) (Vdd = +5.0 Vdc) Typical Supply Current vs. Vdd +8.0 Vdc LNA Mode +15 dBm Bypass Mode +30 dBm Channel Temperature 150 °C Continuous Pdiss (T = 85 °C) (derate 13.5 mW/°C above 85 °C) 0.878 W Thermal Resistance (channel to ground paddle) 74.1 °C/W Storage Temperature -65 to +150° C Operating Temperature Vdd (Vdc) Idd (mA) +4.5 87 +5.0 90 +5.5 93 Truth Table -40 to +85° C LNA Mode Vctl= Short Circuit to DC Ground Bypass Mode Vctl= Open Circuit ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS] 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED LAND PATTERN. Package Information Part Number Package Body Material Lead Finish MSL Rating HMC373LP3 Low Stress Injection Molded Plastic Sn/Pb Solder MSL1 HMC373LP3E RoHS-compliant Low Stress Injection Molded Plastic 100% matte Sn MSL1 Package Marking [3] [1] 373 XXXX [2] 373 XXXX [1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX 7 - 64 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC373LP3 / 373LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Pin Number Function Description 1, 3, 5, 8, 10, 12, 13, 15, 16 N/C No connection necessary. These pins may be connected to RF/DC ground. 2 RFIN This pin is matched to 50 Ohms with a 19 nH inductor to ground. See Application Circuit. 4 Vctl DC ground return. LNA is in high gain mode when a short circuit is introduced to this pin through an external switch. LNA is in bypass mode when open circuit is introduced 6 ACG An external capacitor of 0.01μF to ground is required for low frequency bypassing. See Application Circuit for further details. 7, 14 GND These pins must be connected to RF/DC ground. 9 Vdd Power supply voltage. Choke inductor and bypass capacitor are required. See application circuit. 11 RFOUT This pin is AC coupled and matched to 50 Ohms. Interface Schematic For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] AMPLIFIERS - LOW NOISE - SMT 7 Pin Descriptions 7 - 65 HMC373LP3 / 373LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Evaluation PCB AMPLIFIERS - LOW NOISE - SMT 7 List of Materials for Evaluation PCB 107220 [1] Item Description J1 - J2 PCB Mount SMA RF Connector J3 - J4 DC Pin J5 2 Pos DIP Switch C1 10000 pF Capacitor, 0402 Pkg. C2 10000 pF Capacitor, 0603 Pkg. C3 1000 pF Capacitor, 0402 Pkg. L1 19 nH Inductor, 0402 Pkg. L2 18 nH Inductor, 0603 Pkg. R1 2 Ohm Resistor, 0402 Pkg. U1 HMC373LP3 / HMC373LP3E Amplifier PCB [2] 107177 Evaluation Board The circuit board used in the application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request. [1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350 7 - 66 For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] HMC373LP3 / 373LP3E v03.0610 GaAs PHEMT MMIC LOW NOISE AMPLIFIER w/ BYPASS MODE, 700 - 1000 MHz Application Circuit 7 AMPLIFIERS - LOW NOISE - SMT Evaluation Board Circuit Note 1: Choose value of capacitor C1 for low frequency bypassing. A 0.01 μF ±10% capacitor is recommended. Note 2: Pin 4 (Vctl) is the DC ground return for the circuit. The LNA is in the high gain mode when a short circuit is introduced to this pin through an external switch. The LNA is in bypass mode when an open circuit is introduced. For the data presented, switching is done through a two position DIP switch (J5) in series with a 2 Ohm resistor (to account for the Ron of an electrical switch). Note 3: L1, L2 and C1 should be located as close to pins as possible. For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or [email protected] 7 - 67