ETC2 ICTE-36 Transient voltage suppressor Datasheet

ICTE-5 thru ICTE-45C
Transient Voltage Suppressor
Breakdown Voltage 5.0 to 45 Volts
Peak Pulse Power
1500 Watts
Features

CASE: DO-201AD (DO-27)






Breakdown Voltages (VBR) from 5.0 to 45V
1500W peak pulse power capability with a 10/1000μs
waveform, repetitive rate (duty cycle):0.01%
Fast Response Time
Low incremental surge resistance
Excellent clamping capability
Available in uni-directional and bi-directional
High temperature soldering guaranteed: 265℃ /10
seconds, 0.375” (9.5mm) lead length, 5lbs. (2.3kg)
tension
效
无
Application

Use in sensitive electronics protection against voltage
transients induced by inductive load switching and
lighting on ICS, MOSFE, signal lines of sensor units for
consumer, computer, industrial, automotive and
telecommunication
印
打
Mechanical Data




Dimensions in inches and (millimeters)

Case: Void-free transfer molded thermosetting epoxy
body meeting UL94V-O
Terminals: Tin-Lead or ROHS Compliant annealed
matte-Tin plating readily solderable per MIL-STD-750,
Method 2026
Marking: Part number and polarity diode symbol
Polarity: Cathode indicated by band
Weight: 1.2g(Approximately)
Maximum Ratings and Electrical Characteristics @
Symbol
Conditions
PPPM
Peak pulse power capability with a 10/1000μs
IPPM
Peak pulse current with a 10/1000μs
PM(AV)
25OC unless otherwise specified
Steady state power dissipation at TL=40℃ ,Lead lengths 0.375”(10mm)
Value
Unit
1500
W
SEE TABLE
A
5
W
IFSM
Peak forward surge current,8.3ms single half sine-wave unidirectional only⑴
200
A
VF
Maximum instantaneous forward voltage at 100A for unidirectional only
3.5
V
RθJL
Thermal resistance junction to lead
22
℃/W
RθJA
Thermal resistance junction to ambient
82
℃/W
TJ, TSTG
Operating and Storage Temperature
-65 to +150
℃
Notes:
⑴ Measured on 8.3ms single half sine-wave or equivalent square wave, duty cycle=4 pulses per minute maximum
Document Number: ICTE-5 thru ICTE-45C
Feb.29,2012
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1
ICTE-5 thru ICTE-45C
Electrical Characteristics @ 25°C (Unidirectional) TABLE
Microsemi
Part
Number
Breakdown
Voltage
VBR @ IBR
MIN
MAX
VBR(V)
ICTE-5
ICTE-8
ICTE-10
ICTE-12
ICTE-15
ICTE-18
ICTE-22
ICTE-36
ICTE-45
6.00
9.40
11.7
14.1
17.6
21.2
25.9
42.4
52.9
7.00
10.39
12.93
15.58
19.45
23.43
28.63
46.86
58.47
IBR
(mA)
1
1
1
1
1
1
1
1
1
Stand
Off
Voltage
(Note1)
Maximum
Reverse
current
ID @ VWM
Maximum
Peak
Pulse
Current
VWM(V)
5.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
ID(µA)
300
25
2
2
2
2
2
2
2
IPP (A)
160
100
90
70
60
50
40
23
19
Maximum
Clamping
Voltage
VC @ IPP
IPP1=1A
IPP2=10A
VC(V)
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
VC(V)
7.5
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
效
无
印
VF at 100amps peak, 8.3msec sine wave equals 3.5volts maximum.
Electrical Characteristics @ 25°C (Test Both Polarities for Bidirectional) TABLE
Microsemi
Part
Number
Breakdown
Voltage
VBR @ IBR
MIN
MAX
VBR(V)
ICTE-5C
ICTE-8C
ICTE-10C
ICTE-12C
ICTE-15C
ICTE-18C
ICTE-22C
ICTE-36C
ICTE-45C
6.00
9.40
11.7
14.1
17.6
21.2
25.9
42.4
52.9
7.00
10.39
12.93
15.58
19.45
23.43
28.63
46.86
58.47
打
C Suffix indicates Bidirectional
IBR
(mA)
1
1
1
1
1
1
1
1
1
Stand
Off
Voltage
(Note1)
Maximum
Reverse
current
ID @ VWM
Maximum
Peak
Pulse
Current
VWM(V)
5.0
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
ID(µA)
300
25
2
2
2
2
2
2
2
IPP (A)
160
100
90
70
60
50
40
23
19
Maximum
Clamping
Voltage
VC @ IPP
IPP1=1A
IPP2=10A
VC(V)
7.1
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
VC(V)
7.5
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
Note1.TVS devices are normally selected according to the reverse “Stand Off Voltage” (VWM) which should be equal to or greater
than the dc or continuous peak operating voltage level.
PPP - Peak Pulse Power (kW)
100
1.0
IPP
0.5
150
Impulse
Exponential
Decay
IPP - Peak Pulse Current - % IPP
Characteristic Curve
tW
IPP
tW
tp
10
Half Sine
tW=0.71p
Square
Wave
tW
Current Waveforms
1.0
0.1
1.0
10
tP-Pulse Time (µs)
102
103
Fig. 1 Peak Pulse Power vs. Pulse Time
Document Number: ICTE-5 thru ICTE-45C
Feb.29,2012
Pulse time duration (tp)
is defined as that point
where ip decays to 50%
of peak value (IPP)
tr=10µs
Peak Value IPP
100
Half Value IPP
2
10/1000µs Waveform
as defined by R.E.A.
50
0
0
1.0
2.0
t-Time (ms)
3.0
4.0
Fig.2 Pulse Waveform for Exponential Surge
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ICTE-5 thru ICTE-45C
105
C J– Junction Capacitance (pF)
PPP-Peak Pulse Power or continuous
Average Power in Percent of 25 ℃ (%)
100
Peak Pulse Power
(Single pulse).
75
50
Average
Power
25
0
0
50
100
150
Lead or Ambient Temperature (℃)
10
Measured at
Stand-off Voltage
3
10
102
200
Measured at
Zero Bias
4
1
10
VBR – Breakdown Voltage (V)
100
效
无
印
Fig.4 Typical Capacitance vs.
Breakdown Voltage (Unidirectional)
Fig.3 Derating Curve
105
3
10
104
Peak Forward Surge Current (A)
C J– Junction Capacitance (pF)
TJ=TJ Max.
8.3ms Single Half Sine-Wave
Measured at
Zero Bias
3
10
Measured at
Stand-off Voltage
打
102
1
2
10
10
10
VBR – Breakdown Voltage (V)
1
100
Fig.5 Typical Capacitance vs.
Breakdown Voltage (Bidirectional)
10
Number of Cycles at 60HZ
100
Fig.6 Max. Non-Repetitive Forward Surge Current
Uni-Directional Only
ICTE-22
ICTE-15
ICTE-12
ICTE-18
10
ICTE-10
20
ICTE-8
ICTE-5
V C– Clamping Voltage (V)
40
4
1
1
10
Ipp – Peak Pulse Current (A)
100
Fig.7 Typical Capacitance Clamping Voltage
vs. Peak Pulse Current
Document Number: ICTE-5 thru ICTE-45C
Feb.29,2012
www.smsemi.com
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