BSS 88 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS(th) = 0.8...2.0V Pin 1 Pin 2 G Pin 3 D Type VDS ID RDS(on) Package Marking BSS 88 240 V 0.25 A 8Ω TO-92 SS88 Type BSS 88 BSS 88 BSS 88 Ordering Code Q62702-S287 Q62702-S303 Q62702-S576 S Tape and Reel Information E6288 E6296 E6325 Maximum Ratings Parameter Symbol Drain source voltage VDS V Drain-gate voltage Values 240 V DGR RGS = 20 kΩ 240 Gate source voltage VGS ± 14 Gate-source peak voltage,aperiodic Vgs ± 20 Continuous drain current ID TA = 25 °C A 0.25 IDpuls DC drain current, pulsed TA = 25 °C 1 Ptot Power dissipation TA = 25 °C Semiconductor Group Unit W 1 1 12/05/1997 BSS 88 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Tj -55 ... + 150 °C Storage temperature Tstg -55 ... + 150 Thermal resistance, chip to ambient air 1) RthJA ≤ 125 DIN humidity category, DIN 40 040 K/W E IEC climatic category, DIN IEC 68-1 55 / 150 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C V 240 - - 0.6 0.8 1.2 VDS = 240 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 240 V, VGS = 0 V, Tj = 125 °C - 10 100 VDS = 100 V, VGS = 0 V, Tj = 25 °C - - 100 Gate threshold voltage VGS(th) VGS=VDS, ID = 1 mA Zero gate voltage drain current Gate-source leakage current IDSS IGSS VGS = 20 V, VDS = 0 V Drain-Source on-state resistance - 10 100 Ω RDS(on) - 5 8 VGS = 1.8 V, ID = 14 mA - 7 15 2 nA nA VGS = 4.5 V, ID = 0.25 A Semiconductor Group µA 12/05/1997 BSS 88 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 0.25 A Input capacitance 0.14 pF - 80 110 - 15 25 - 8 12 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 0.31 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Rise time - 5 8 - 10 15 - 30 40 - 25 35 tr VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Fall time tf VDD = 30 V, VGS = 10 V, ID = 0.28 A RG = 50 Ω Semiconductor Group 3 12/05/1997 BSS 88 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Symbol Values Parameter min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed - 0.25 - - 1 VSD VGS = 0 V, IF = 0.5 A Semiconductor Group - ISM TA = 25 °C Inverse diode forward voltage A V - 4 0.9 1.3 12/05/1997 BSS 88 Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 4 V 1.2 0.26 W A 0.22 1.0 Ptot ID 0.9 0.20 0.18 0.8 0.16 0.7 0.14 0.6 0.12 0.5 0.10 0.4 0.08 0.3 0.06 0.2 0.04 0.1 0.02 0.0 0 20 40 60 80 100 120 °C 160 0.00 0 20 40 60 80 100 120 TA °C 160 TA Safe operating area ID=f(VDS) Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) parameter : D = 0.01, TC=25°C 285 V 275 V(BR)DSS270 265 260 255 250 245 240 235 230 225 220 215 -60 -20 20 60 100 °C 160 Tj Semiconductor Group 5 12/05/1997 BSS 88 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 0.60 Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 26 Ptot = 1W Ω l i kj hgf A e d 0.45 0.40 c 0.35 0.30 0.25 b 0.20 0.15 0.10 b 2.0 c 2.5 d 3.0 e 3.5 f 4.0 g 4.5 h 5.0 i 6.0 j 7.0 k 8.0 l 10.0 RDS (on) 20 16 14 12 10 8 d e 6 4 a hkfi jlg VGS [V] = 2 1 2 3 4 5 6 7 V c 18 0.05 0.00 0 b 22 VGS [V] a 1.5 0.50 ID a a 1.5 b 2.0 c 2.5 d 3.0 e f 3.5 4.0 g 4.5 h i 5.0 6.0 j 7.0 k l 8.0 10.0 0 0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 0.32 A 0.40 9 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max 1.3 0.55 A S 1.1 ID gfs 1.0 0.45 0.40 0.9 0.8 0.35 0.7 0.30 0.6 0.25 0.5 0.20 0.4 0.15 0.3 0.10 0.2 0.05 0.1 0.0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 0.00 0.0 0.2 0.4 0.6 0.8 A ID 1.1 12/05/1997 BSS 88 Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 0.25 A, VGS = 4.5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA 20 2.6 Ω V 2.2 RDS (on) 16 VGS(th) 2.0 14 1.8 12 1.6 1.4 98% 10 98% 1.2 8 1.0 typ 6 typ 0.8 2% 0.6 4 0.4 2 0.2 0 -60 -20 20 60 100 °C 0.0 -60 160 -20 20 60 100 °C Tj 160 Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs 10 3 10 1 pF A IF C 10 2 10 0 Ciss Coss 10 1 10 -1 Crss Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 5 10 Semiconductor Group 15 20 25 30 V VDS 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 12/05/1997