BUV26 Switch‐mode Series NPN Silicon Power Transistor Designed for high−speed applications. Features • • • • • Switch-mode Power Supplies High Frequency Converters Relay Drivers Driver These Devices are Pb−Free and are RoHS Compliant* www.onsemi.com 12 AMPERES NPN SILICON POWER TRANSISTORS 90 VOLTS, 85 WATTS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit VCEO(sus) 90 Vdc Collector−Base Voltage VCBO 180 Vdc Emitter−Base Voltage VEBO 7.0 Vdc Rating Collector−Emitter Voltage Collector Current − Continuous IC 20 Adc ICM 30 Adc IB 4.0 Adc Base Current − Peak IBM 6.0 Adc Total Power Dissipation @ TC = 25°C Total Power Dissipation @ TC = 60°C PD PD 85 65 W W TJ, Tstg − 65 to +175 °C Collector Current − Peak (pw 10 ms) Base Current − Continuous Operating and Storage Junction Temperature Range SCHEMATIC COLLECTOR 2,4 1 BASE 3 EMITTER MARKING DIAGRAM Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 4 TO−220 CASE 221A STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction−to−Case Symbol Max Unit RqJC 1.76 °C/W 1 2 BUV26G AYWW 1 3 BUV26 A Y WW G = Device Code = Assembly Location = Year = Work Week = Pb−Free Package ORDERING INFORMATION Device BUV26G Package Shipping TO−220 (Pb−Free) 50 Units / Rail *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2014 November, 2014 − Rev. 6 1 Publication Order Number: BUV26/D BUV26 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Symbol Characteristic Min Max 90 − − 1.0 7.0 30 − 1.0 − 3.0 − − 0.6 1.5 − 2.0 Unit OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (IC = 200 mA, IB = 0, L = 25 mH) VCEO(sus) Collector Cutoff Current at Reverse Bias (VCE = 180 V, VBE = −1.5 V, TC = 125°C) ICEX Emitter Base Reverse Voltage (IE = 50 mA) VEBO Emitter Cutoff Current (VEB = 5.0 V) IEBO Collector Cutoff Current (VCE = 180 V, RBE = 50 W, TC = 125°C) ICER Vdc mAdc V mAdc mAdc ON CHARACTERISTICS Collector−Emitter Saturation Voltage (IC = 6.0 A, IB = 0.4 A) (IC = 12 A, IB = 1.2 A) VCE(sat) Base−Emitter Saturation Voltage (IC = 12 A, IB = 1.2 A) VBE(sat) Vdc Vdc SWITCHING CHARACTERISTICS (Resistive Load) Turn On Time IC = 12 A, IB = 1.2 A ton − 0.6 Storage Time VCC = 50 V, VBE = 6.0 V ts − 1.0 Fall Time RB2 = 2.5 W tf − 0.15 Ts − 2.0 Tf − .15 ms SWITCHING CHARACTERISTICS (Inductive Load) Storage Time Fall Time VCC = 50 V, IC = 12 A IB(end) = 1.2 A, VB = 5.0 V LB = 0.5 pH, TJ = 125°C ms Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse width ≤ 300 ms; Duty cycle ≤ 2%. www.onsemi.com 2 BUV26 TYPICAL CHARACTERISTICS 180 VCE(sat), COLL−EMIT SATURATION VOLTAGE (V) 160 hFE, DC CURRENT GAIN 0.6 175°C VCE = 5 V 150°C 140 120 100 25°C 80 60 −55°C 40 20 0 175°C 150°C 25°C 0.4 −55°C 0.3 0.2 0.1 0 0.1 1 10 100 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (A) Figure 1. DC Current Gain Figure 2. Collector−Emitter Saturation Voltage 100 1.4 IC/IB = 10 IC, COLLECTOR CURRENT (A) VBE(sat), BASE−EMIT SATURATION VOLTAGE (V) IC/IB = 10 0.5 1.2 1.0 0.8 −55°C 25°C 0.6 150°C 0.4 175°C 0.2 100 mSec 10 1 0.1 0.01 0 0.1 1 10 100 1 10 IC, COLLECTOR CURRENT (A) VCE, COLLECTOR EMITTER VOLTAGE (V) Figure 3. Base−Emitter Saturation Voltage Figure 4. Safe Operating Area www.onsemi.com 3 100 BUV26 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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