CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN10N60E3 Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 1/9 BVDSS : 650V @Tj=150℃ RDS(ON) : 0.75Ω ID : 10A Description The MTN10N60E3 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features • BVDSS=650V typically @ Tj=150℃ • Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic • RoHS compliant package Applications • Adaptor • LCD Panel Power • TV Main Power • SMPS Standby Power Symbol Outline MTN10N60E3 G：Gate D：Drain S：Source MTN10N60E3 TO-220 G D S CYStek Product Specification Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C) Parameter Symbol Limits Drain-Source Voltage (Note 1) VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current ID 10 ID 6 Continuous Drain Current @TC=100°C Pulsed Drain Current @ VGS=10V (Note 2) IDM 40 Single Pulse Avalanche Energy @ L=10mH, ID=10 Amps, VDD=50V EAS 484 Repetitive Avalanche Energy EAR 21.6 Peak Diode Recovery dv/dt (Note 3) dv/dt 3.0 Maximum Temperature for Soldering @ Lead at 0.063 in(1.6mm) 300 TL from case for 10 seconds Maximum Temperature for Soldering @ Package Body for 10 TPKG 260 seconds Pd Total Power Dissipation (TC=25℃) 216 1.72 Linear Derating Factor Operating Junction and Storage Temperature Tj, Tstg -55~+150 Note : *1. TJ=+25℃ to +150℃. *2. Repetitive rating; pulse width limited by maximum junction temperature. *3. ISD=10A, dI/dt<100A/μs, VDD<BVDSS, TJ=+150℃. Unit V V A A A mJ V/ns °C °C W W/°C °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max MTN10N60E3 Symbol Rth,j-c Rth,j-a Value 0.58 62 Unit °C/W °C/W CYStek Product Specification CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 3/9 Characteristics (Tj=25°C, unless otherwise specified) Symbol Min. Static BVDSS 600 BVDSS ∆BVDSS/∆Tj BVDS VGS(th) 2.0 *GFS IGSS IDSS IDSS *RDS(ON) Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *VSD *IS *ISM *trr *Qrr - Typ. Max. Unit Test Conditions 650 0.631 700 6.8 0.65 4.0 ±100 25 250 0.75 V V V/°C V V S nA μA μA Ω VGS=0, ID=250μA VGS=0, ID=250μA, Tj=150°C Reference to 25°C, ID=250μA VGS=0, ID=10A VDS = VGS, ID=250μA VDS =15V, ID=10A VGS=±30 VDS =600V, VGS =0 VDS =480V, VGS =0, Tj=125°C VGS =10V, ID=6A 39 9.5 17.6 19 16 49 16 1882 170 20 - nC ID=10A, VDD=300V, VGS=10V ns VDD=300V, ID=10A, VGS=10V, RG=9.1Ω pF VGS=0V, VDS=25V, f=1MHz 352 2.9 1.5 10 40 528 4.35 V IS=10A, VGS=0V A VD=VG=0, VS=1.3V ns μC VGS=0, IF=10A, dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN10N60E3 MTN10N60E3 Package TO-220 (RoHS compliant) Shipping Marking 50 pcs/tube, 20 tubes/box, 4 boxes / carton 10N60 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 4/9 Characteristic Curves MTN10N60E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 5/9 Characteristic Curves(Cont.) MTN10N60E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 6/9 Characteristic Curves(Cont.) MTN10N60E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 7/9 Test Circuit and Waveforms MTN10N60E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 8/9 Test Circuit and Waveforms(Cont.) MTN10N60E3 CYStek Product Specification Spec. No. : C406E3 Issued Date : 2008.12.02 Revised Date :2008.12.09 Page No. : 9/9 CYStech Electronics Corp. TO-220AB Dimension A Marking: B D E C H Device Name K M I 10N60 □□□□ Date Code 3 G N 2 1 4 O P 3-Lead TO-220AB Plastic Package CYStek Package Code: E3 Style: Pin 1.Gate 2.Drain 3.Source 4.Drain *: Typical Inches Min. Max. 0.2441 0.2598 0.3386 0.3543 0.1732 0.1890 0.0492 0.0571 0.0142 0.0197 0.3858 0.4094 *0.6398 DIM A B C D E G H Millimeters Min. Max. 6.20 6.60 8.60 9.00 4.40 4.80 1.25 1.45 0.36 0.50 9.80 10.40 *16.25 DIM I K M N O P Inches Min. Max. *0.1508 0.0299 0.0394 0.0461 0.0579 *0.1000 0.5217 0.5610 0.5787 0.6024 Millimeters Min. Max. *3.83 0.76 1.00 1.17 1.47 *2.54 13.25 14.25 14.70 15.30 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: KFC ; pure tin plated • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN10N60E3 CYStek Product Specification