BCU83–SMD MECHANICAL DATA Dimensions in mm NPN EPITAXIAL PLANAR SILICON TRANSISTOR 4 .5 1 .0 2 .5 1 .5 4 .2 5 m a x . 1 .6 0 .4 0 0 .4 0 Ideal for high current driver applications requiring low loss devices FEATURES • LOW VCE(SAT) • HIGH CURRENT 0 .5 0 • HIGH ENERGY RATING 1 .5 3 .0 - + * APPLICATIONS • ANY HIGH CURRENT DRIVER APPLICATIONS REQUIRING SOT89 EFFICIENT LOW LOSS DEVICES ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCEO Collector – Emitter voltage 20V VCBO Collector – Base voltage 60V VEBO Emitter – Base voltage 6V IC Collector current 5A IC(PK) Peak Collector current 8A Ptot Total Dissipation at Tcase = 25°C Tstg Storage Temperature Tj Maximum Operating Junction Temperature Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: [email protected] Website: http://www.semelab.co.uk 0.9W –55 to 150°C 150°C Prelim. 1/94 BCU83–SMD ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) ICBO Parameter Collector cut–off current Test Conditions VCB = 50V IE = 0 IEBO Emitter cut–off current VEB = 5V IC = 0 1.0 IC = 3A IB = 60mA 0.5 V IC = 3A IB = 60mA 0.6 1.5 V VCE = 2V IC = 0.5A 100 560 VCE = 2V IC = 3A 75 VCE(sat)* VBE(sat)* Collector – Emitter saturation voltage Base – Emitter saturation voltage Min. Typ. Max. 1.0 Unit. mA m A hFE* DC current gain fT Transition frequency VCE = 10V IC = 50mA 120 MHz Cob Output capacitance VCB = 10V f = 1MHz 45 pF — * Pulse test tp = 300ms , d £ 2% Magnatec. Telephone +44(0)1455 554711. Fax +44(0)1455 558843. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim. 1/94