APT38M50J 500V, 38A, 0.10Ω Max N-Channel MOSFET S S Power MOS 8™ is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capacitance. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control slew rates during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency. Reliability in flyback, boost, forward, and other circuits is enhanced by the high avalanche energy capability. D G SO 2 T- 27 "UL Recognized" file # E145592 ISOTOP ® D APT38M50J Single die MOSFET G S TYPICAL APPLICATIONS FEATURES • Fast switching with low EMI/RFI • PFC and other boost converter • Low RDS(on) • Buck converter • Ultra low Crss for improved noise immunity • Two switch forward (asymmetrical bridge) • Low gate charge • Single switch forward • Avalanche energy rated • Flyback • RoHS compliant • Inverters Absolute Maximum Ratings Symbol ID Parameter Unit Ratings Continuous Drain Current @ TC = 25°C 38 Continuous Drain Current @ TC = 100°C 24 A IDM Pulsed Drain Current VGS Gate-Source Voltage ±30 V EAS Single Pulse Avalanche Energy 2 1200 mJ IAR Avalanche Current, Repetitive or Non-Repetitive 28 A 1 175 Thermal and Mechanical Characteristics Min Typ Max Unit W PD Total Power Dissipation @ TC = 25°C 357 RθJC Junction to Case Thermal Resistance 0.35 RθCS Case to Sink Thermal Resistance, Flat, Greased Surface Operating and Storage Junction Temperature Range VIsolation RMS Voltage (50-60hHz Sinusoidal Waveform from Terminals to Mounting Base for 1 Min.) WT Torque Package Weight -55 150 V 2500 1.03 oz 29.2 g 10 in·lbf 1.1 N·m Terminals and Mounting Screws. MicrosemiWebsite-http://www.microsemi.com °C 5-2009 TJ,TSTG °C/W 0.15 Rev B Characteristic 050-8075 Symbol Static Characteristics TJ = 25°C unless otherwise specified Symbol Parameter VBR(DSS) Drain-Source Breakdown Voltage ΔVBR(DSS)/ΔTJ Breakdown Voltage Temperature Coefficient RDS(on) Drain-Source On Resistance VGS(th) Gate-Source Threshold Voltage ΔVGS(th)/ΔTJ IGSS Gate-Source Leakage Current Dynamic Characteristics Symbol Forward Transconductance Ciss Input Capacitance Crss Reverse Transfer Capacitance Coss Output Capacitance 3 VDS = 500V TJ = 25°C VGS = 0V TJ = 125°C Typ Max 0.60 0.085 4 -10 0.10 5 100 500 ±100 VGS = ±30V Unit V V/°C Ω V mV/°C µA nA TJ = 25°C unless otherwise specified Parameter gfs 500 VGS = VDS, ID = 2.5mA Threshold Voltage Temperature Coefficient Zero Gate Voltage Drain Current Min VGS = 10V, ID = 28A 3 IDSS Test Conditions VGS = 0V, ID = 250µA Reference to 25°C, ID = 250µA APT38M50J Min Test Conditions VDS = 50V, ID = 28A 4 Effective Output Capacitance, Charge Related Co(er) 5 Effective Output Capacitance, Energy Related Max 42 8800 120 945 VGS = 0V, VDS = 25V f = 1MHz Co(cr) Typ Unit S pF 550 VGS = 0V, VDS = 0V to 333V Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr td(off) tf Current Rise Time Turn-Off Delay Time 275 220 50 100 38 45 100 33 VGS = 0 to 10V, ID = 28A, VDS = 250V Resistive Switching VDD = 333V, ID = 28A RG = 4.7Ω 6 , VGG = 15V Current Fall Time nC ns Source-Drain Diode Characteristics Symbol IS ISM Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) 1 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge dv/dt Peak Recovery dv/dt Test Conditions MOSFET symbol showing the integral reverse p-n junction diode (body diode) Min Typ D Max Unit 38 A G 175 S ISD = 28A, TJ = 25°C, VGS = 0V ISD = 28A 3 diSD/dt = 100A/µs, TJ = 25°C ISD ≤ 28A, di/dt ≤1000A/µs, VDD = 333V, TJ = 125°C 1 660 13.2 V ns µC 8 V/ns 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Starting at TJ = 25°C, L = 3.06mH, RG = 4.7Ω, IAS = 28A. 3 Pulse test: Pulse Width < 380µs, duty cycle < 2%. 5-2009 4 Co(cr) is defined as a fixed capacitance with the same stored charge as COSS with VDS = 67% of V(BR)DSS. 5 Co(er) is defined as a fixed capacitance with the same stored energy as COSS with VDS = 67% of V(BR)DSS. To calculate Co(cr) for any value of VDS less than V(BR)DSS, use this equation: Co(er) = -2.04E-7/VDS^2 + 4.76E-8/VDS + 1.36E-10. 6 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 050-8075 Rev B Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT38M50J 100 200 V GS = 10V T = 125°C TJ = -55°C J 90 V ID, DRIAN CURRENT (A) TJ = 25°C 80 40 TJ = 150°C TJ = 125°C 0 60 50 40 30 20 5V 10 4.5V 0 0 5 10 15 20 25 VDS(ON), DRAIN-TO-SOURCE VOLTAGE (V) 6V 70 0 Figure 2, Output Characteristics 175 NORMALIZED TO VDS> ID(ON) x RDS(ON) MAX. VGS = 10V @ 28A 250µSEC. PULSE TEST @ <0.5 % DUTY CYCLE 150 2.0 ID, DRAIN CURRENT (A) 1.5 1.0 0.5 125 TJ = -55°C 100 TJ = 25°C 75 TJ = 125°C 50 25 0 0 -55 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 3, RDS(ON) vs Junction Temperature 70 0 2 4 6 8 10 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 4, Transfer Characteristics 20,000 Ciss 10,000 TJ = -55°C TJ = 25°C 50 C, CAPACITANCE (pF) TJ = 125°C 40 30 20 1000 Coss 100 Crss 10 0 VGS, GATE-TO-SOURCE VOLTAGE (V) 16 10 20 30 40 ID, DRAIN CURRENT (A) Figure 5, Gain vs Drain Current 100 200 300 400 500 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6, Capacitance vs Drain-to-Source Voltage 12 VDS = 100V 10 VDS = 250V 8 6 VDS = 400V 4 2 0 0 175 ID = 28A 14 0 10 50 50 100 150 200 250 300 350 Qg, TOTAL GATE CHARGE (nC) Figure 7, Gate Charge vs Gate-to-Source Voltage ISD, REVERSE DRAIN CURRENT (A) 0 150 125 100 TJ = 25°C 75 TJ = 150°C 50 25 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 VSD, SOURCE-TO-DRAIN VOLTAGE (V) Figure 8, Reverse Drain Current vs Source-to-Drain Voltage 5-2009 gfs, TRANSCONDUCTANCE 60 Rev B RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE Figure 1, Output Characteristics 2.5 5 10 15 20 25 30 VDS, DRAIN-TO-SOURCE VOLTAGE (V) 050-8075 ID, DRAIN CURRENT (A) 120 = 7,8 & 10V GS 80 160 APT38M50J 250 250 100 100 IDM ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IDM 10 13µs 100µs 1ms Rds(on) 10ms 1 100ms 0.1 13µs 100µs 1ms 10ms Rds(on) TJ = 150°C TC = 25°C 1 100ms Scaling for Different Case & Junction Temperatures: ID = ID(T = 25°C)*(TJ - TC)/125 DC line DC line TJ = 125°C TC = 75°C 1 10 0.1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 9, Forward Safe Operating Area C 1 10 100 600 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 10, Maximum Forward Safe Operating Area 0.35 D = 0.9 0.30 0.7 0.25 0.20 0.5 Note: 0.15 PDM ZθJC, THERMAL IMPEDANCE (°C/W) 0.40 0.3 0.10 t1 t2 t1 = Pulse Duration 0.05 0 t 0.1 Duty Factor D = 1/t2 Peak TJ = PDM x ZθJC + TC SINGLE PULSE 0.05 10-5 10-4 10-3 10-2 10-1 RECTANGULAR PULSE DURATION (seconds) Figure 11. Maximum Effective Transient Thermal Impedance Junction-to-Case vs Pulse Duration 1.0 SOT-227 (ISOTOP®) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504) 4.0 (.157) 4.2 (.165) (2 places) 5-2009 14.9 (.587) 15.1 (.594) Rev B 3.3 (.129) 3.6 (.143) 38.0 (1.496) 38.2 (1.504) 050-8075 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places) 1.95 (.077) 2.14 (.084) * Source 30.1 (1.185) 30.3 (1.193) Drain * Emitter terminals are shorted internally. Current handling capability is equal for either Source terminal. * Source Gate Dimensions in Millimeters and (Inches) ISOTOP® is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.