NID5001N Preferred Device Self−protected FET with Temperature and Current Limit HDPlus devices are an advanced series of power MOSFETs which utilize ON Semicondutor’s latest MOSFET technology process to achieve the lowest possible on−resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain−to−Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate−to−Source Clamp. Features • • • • • • • • http://onsemi.com VDSS (Clamped) RDS(ON) TYP ID MAX (Limited) 42 V 23 mΩ @ 10 V 33 A* Drain Gate Input Low RDS(on) Current Limitation Thermal Shutdown with Automatic Restart Short Circuit Protection IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection RG Overvoltage Protection MPWR ESD Protection Current Limit Temperature Limit Source MARKING DIAGRAM MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage Internally Clamped VDSS 42 Vdc Drain−to−Gate Voltage Internally Clamped (RGS = 1.0 M) VDGR 42 Vdc VGS 14 Vdc Rating Gate−to−Source Voltage Drain Current Current Sense YWW 2 3 NID5001N = Device Code Y = Year WW = Work Week X NID 5001N 1 = Gate 2 = Drain 3 = Source Continuous ID Total Power Dissipation @ TA = 25°C (Note 1) @ TA = 25°C (Note 1) @ TA = 25°C (Note 2) PD Thermal Resistance − Junction−to−Case Junction−to−Ambient (Note 1) Junction−to−Ambient (Note 2) RJC RJA RJA 1.95 120 80 °C/W Single Pulse Drain−to−Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 4.5 Apk, L = 120 mH, RG = 25 ) EAS 1215 mJ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. TJ, Tstg −55 to 150 °C Preferred devices are recommended choices for future use and best overall value. Operating and Storage Temperature Range Internally Limited 1 DPAK CASE 369C STYLE 2 W ORDERING INFORMATION 64 1.0 1.56 Device 1. Minimum FR4 PCB, steady state. 2. Mounted onto a 2″ square FR4 board (1″ square, 2 oz. Cu 0.06″ thick single−sided, t = steady state). Semiconductor Components Industries, LLC, 2004 January, 2004 − Rev. 6 1 NID5001NT4 Package Shipping† DPAK 2500/Tape & Reel *Max current may be limited below this value depending on input conditions. Publication Order Number: NID5001N/D NID5001N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit 42 42 46 44 50 50 Vdc 1.5 6.5 5.0 50 100 Adc 1.8 5.0 2.0 Vdc −mV/°C 23 43 29 55 28 50 34 60 0.80 1.1 OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 Adc) (VGS = 0 Vdc, ID = 250 Adc, TJ = 150°C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C) IDSS Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) IGSSF Adc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient VGS(th) Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 10 Vdc, ID = 5.0 Adc, TJ @ 150°C) RDS(on) Static Drain−to−Source On−Resistance (Note 3) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 25°C) (VGS = 5.0 Vdc, ID = 5.0 Adc, TJ @ 150°C) RDS(on) 1.0 Source−Drain Forward On Voltage (IS = 5 A, VGS = 0 V) m m VSD V SWITCHING CHARACTERISTICS Turn−on u o Time e s VGS = 5.0 Vdc VDD = 25 Vdc ID = 1.0 Adc E t RG = 2 5 Ext 2.5 T(on) 32 3 40 0 T(off) 68 75 VGS = 10 Vdc VDD = 25 Vdc ID = 1.0 Adc Ext RG = 2.5 T(on) 11 15 5 T(off) 86 95 Slew Rate On RL = 4.7 , Vin = 0 to 10 V, VDD = 12 V −dVDS/dton 0.5 Vs Slew−Rate Off RL = 4.7 , Vin = 10 to 0 V, VDD = 12 V dVDS/dtoff 0.35 Vs Turn−off Time Turn−on u o Time e Turn−off Time s SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) Current Limit (VGS = 5.0 Vdc) VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C) ILIM (VGS = 10 Vdc) VDS = 10 V (VGS = 10 Vdc, TJ = 150°C) Temperature Limit (Turn−off) VGS = 5.0 Vdc Temperature Limit (Circuit Reset) VGS = 5.0 Vdc Temperature Limit (Turn−off) VGS = 10 Vdc Temperature Limit (Circuit Reset) VGS = 10 Vdc 21 12 30 19 36 30 Adc 29 13 41 24 49 31 Adc TLIM(off) 150 175 200 °C TLIM(on) 135 160 185 °C TLIM(off) 150 165 185 °C TLIM(on) 135 150 170 °C ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Electro−Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD V 4000 400 3. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2%. http://onsemi.com 2 NID5001N TYPICAL PERFORMANCE CURVES ID, DRAIN CURRENT (AMPS) VGS = 10 V to 4.2 V 28 4V 3.8 V 24 ID, DRAIN CURRENT (AMPS) 28 3.6 V 20 TJ = 25°C 3.4 V 16 3.2 V 12 3.0 V 8 2.8 V 4 2.6 V 0 1 1.5 2 2.5 3 3.5 20 TC = −55°C 16 12 8 25°C 4 4 100°C VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1 2 3 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics RDS(on), DRAIN−TO−SOURCE RESISTANCE () RDS(on), DRAIN−TO−SOURCE RESISTANCE () 24 0 0.5 0 0.2 ID = 5 A TJ = 25°C 0.15 0.1 0.05 0 2 4 6 5 7 8 9 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 3 10 4 0.035 TJ = 25°C 0.03 VGS = 5 V 0.025 VGS = 10 V 0.02 0.015 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance vs. Drain Current and Gate Voltage Figure 3. On−Resistance vs. Gate−to−Source Voltage 1.6 100000 ID = 5 A VGS = 10 V VGS = 0 V 1.4 IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 10000 1.2 1 TJ = 150°C 1000 TJ = 100°C 0.8 0.6 −50 −25 0 25 50 75 100 100 10 15 20 25 30 35 40 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage http://onsemi.com 3 45 NID5001N TYPICAL PERFORMANCE CURVES 100 VGS = 0 V TJ = 25°C 0.12 I D , DRAIN CURRENT (AMPS) IS, SOURCE CURRENT (AMPS) 0.14 0.1 0.08 0.06 0.04 VGS = 5 V SINGLE PULSE TC = 25°C 10 dc 1.0 0.1 0.5 0.6 0.7 0.8 0.1 0.9 100 s RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.01 0.4 10 ms 1 ms 0.02 0 0.3 Based upon a TJ = 100°C, Steady State. 1.0 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 8. Maximum Rated Forward Biased Safe Operating Area Figure 7. Diode Forward Voltage vs. Current http://onsemi.com 4 100 NID5001N PACKAGE DIMENSIONS DPAK CASE 369C−01 ISSUE O SEATING PLANE −T− V E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z C B 3 U K F J L H D G STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 −−− 0.035 0.050 0.155 −−− T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 5 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 −−− 0.89 1.27 3.93 −−− NID5001N ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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