Fairchild NDP5060 N-channel enhancement mode field effect transistor Datasheet

October 1996
NDP5060 / NDB5060
N-Channel Enhancement Mode Field Effect Transistor
General Description
Features
26 A, 60 V. RDS(ON) = 0.05 Ω @ VGS= 10 V.
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high cell
density, DMOS technology. This very high density process has
been especially tailored to minimize on-state resistance,
provide superior switching performance, and withstand high
energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage
applications such as automotive, DC/DC converters, PWM
motor controls, and other battery powered circuits where fast
switching, low in-line power loss, and resistance to transients
are needed.
Critical DC electrical parameters specified at elevated
temperature.
Rugged internal source-drain diode can eliminate the need
for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole
and surface mount applications.
________________________________________________________________________________
D
G
S
Absolute Maximum Ratings
T C = 25°C unless otherwise note
Symbol
Parameter
VDSS
Drain-Source Voltage
NDP5060
60
V
VDGR
Drain-Gate Voltage (RGS < 1 MΩ)
60
V
VGSS
Gate-Source Voltage - Continuous
±20
V
ID
Drain Current
- Nonrepetitive (tP < 50 µs)
PD
26
- Pulsed
78
Total Power Dissipation @ TC = 25°C
Operating and Storage Temperature Range
© 1997 Fairchild Semiconductor Corporation
Units
±40
- Continuous
Derate above 25°C
TJ,TSTG
NDB5060
A
68
W
0.45
W/°C
-65 to 175
°C
NDP5060 Rev.A
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
100
mJ
26
A
250
µA
DRAIN-SOURCE AVALANCHE RATINGS (Note 1)
W DSS
Single Pulse Drain-Source Avalanche
Energy
IAR
Maximum Drain-Source Avalanche Current
VDD = 30 V, ID = 26 A
OFF CHARACTERISTICS
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
IDSS
Zero Gate Voltage Drain Current
VDS = 60 V, VGS = 0 V
60
V
1
mA
IGSSF
Gate - Body Leakage, Forward
VGS = 20 V, VDS = 0 V
100
nA
IGSSR
Gate - Body Leakage, Reverse
VGS = -20 V, VDS = 0 V
-100
nA
V
TJ = 125°C
ON CHARACTERISTICS (Note 1)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
TJ = 125°C
RDS(ON)
Static Drain-Source On-Resistance
2
2.9
4
1.4
2.2
2.8
0.04
0.05
0.07
0.08
VGS = 10 V, ID = 13 A
TJ = 125°C
ID(on)
On-State Drain Current
VGS = 10 V, VDS = 10 V
gFS
Forward Transconductance
VDS = 10 V, ID = 13 A
26
Ω
A
9
S
630
pF
225
pF
70
pF
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 30 V, VGS = 0 V,
f = 1.0 MHz
SWITCHING CHARACTERISTICS (Note 1)
tD(on)
Turn - On Delay Time
tr
Turn - On Rise Time
tD(off)
Turn - Off Delay Time
tf
Turn - Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 26 A,
VGS = 10 V, RGEN = 15 Ω
VDS = 24 V,
ID = 26 A, VGS = 10 V
9
20
nS
95
200
nS
19
40
nS
48
100
nS
20
40
nC
5
nC
11
nC
NDP5060 Rev.A
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
DRAIN-SOURCE DIODE CHARACTERISTICS
IS
Maximum Continuos Drain-Source Diode Forward Current
26
A
ISM
Maximum Pulsed Drain-Source Diode Forward Current
78
A
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 13 A (Note 1)
0.9
1.3
V
trr
Reverse Recovery Time
54
120
ns
Irr
Reverse Recovery Current
VGS = 0 V, IF = 26 A,
dIF/dt = 100 A/µs
2.1
8
A
THERMAL CHARACTERISTICS
RθJC
Thermal Resistance, Junction-to-Case
2.2
°C/W
RθJA
Thermal Resistance, Junction-to-Ambient
62.5
°C/W
Note:
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%.
NDP5060 Rev.A
Typical Electrical Characteristics
2
VGS = 20V
12
10
9.0
40
R DS(on) , NORMALIZED
8.0
30
7.0
20
6.0
10
DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)
50
5.0
0
1.8
GS
7.0
1.4
8.0
1.2
1
DS
2
3
, DRAIN-SOURCE VOLTAGE (V)
4
10
20
0
I
D
GS
20
30
, DRAIN CURRENT (A)
40
50
V GS =10 V
= 10V
, NORMALIZED
V
= 13A
1.5
R DS(on)
1.25
1
0.75
0.5
-50
D
Figure 2. On-Resistance Variation with Gate
Voltage and Drain Current.
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
DRAIN-SOURCE ON-RESISTANCE
1.75
10
2.5
I
R DS(ON), NORMALIZED
12
0.8
5
2
DRAIN-SOURCE ON-RESISTANCE
9.0
1
Figure 1. On-Region Characteristics.
2
TJ = 125°C
1.5
25°C
1
-55°C
0.5
175
0
Figure 3. On-Resistance Variation
with Temperature.
10
20
30
I D , DRAIN CURRENT (A)
40
50
Figure 4. On-Resistance Variation with Drain
Current and Temperature.
40
1.2
T = -55°C
J
V GS(th) , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
V DS = 10V
25°C
32
I D , DRAIN CURRENT (A)
= 6.0 V
0.6
0
V
125°C
24
16
8
0
V
1.6
2
4
6
8
V GS , GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
10
VDS = VGS
1.1
I D = 250µA
1
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
TJ , JUNCTION TEMPERATURE (°C)
125
150
175
Figure 6. Gate Threshold Variation with
Temperature.
NDP5060 Rev.A
Typical Electrical Characteristics (continued)
20
10
I S , REVERSE DRAIN CURRENT (A)
I D = 250µA
1.15
1.1
1.05
1
0.95
0.9
-50
-25
0
25
50
75
100
125
T J , JUNCTION TEMPERATURE (°C)
150
175
V GS = 0V
3
TJ = 125°C
1
25°C
0.1
-55°C
0.01
0.001
0.0001
0
Figure 7. Breakdown Voltage Variation with
Temperature.
1.5
20
VDS = 12V
I D = 26A
V GS , GATE-SOURCE VOLTAGE (V)
1000
Ciss
500
Coss
200
f = 1 MHz
100
Crss
V GS = 0V
24V
16
48V
12
8
4
0
40
1
2
3
5
10
20
VDS , DRAIN TO SOURCE VOLTAGE (V)
40
60
Figure 9. Capacitance Characteristics.
8
16
24
Q g , GATE CHARGE (nC)
t on
t d(on)
t d(off)
40
tf
90%
90%
V OUT
D
32
to f f
tr
RL
V IN
R GEN
0
Figure 10. Gate Charge Characteristics.
VDD
VGS
0.3
0.6
0.9
1.2
VSD , BODY DIODE FORWARD VOLTAGE (V)
Figure 8. Body Diode Forward Voltage
Variation with Current and Temperature.
1500
CAPACITANCE (pF)
BV DSS , NORMALIZED
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.2
VO U T
10%
10%
INVERTED
90%
DUT
G
V IN
S
50%
50%
10%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDP5060 Rev.A
Typical Electrical Characteristics (continued)
100
V DS = 10V
60
TJ = -55°C
9
25°C
I , DRAIN CURRENT (A)
12
40
125°C
R
N)
(O
DS
Lim
10µ
it
100
20
1m
10
10
V
= 10V
GS
2
SINGLE PULSE
o
R θJC =2.2 C/W
1
TC = 25°C
3
s
µs
s
ms
10
0m
s
DC
5
D
6
g
FS
, TRANSCONDUCTANCE (SIEMENS)
15
0
0.5
0
4
8
12
16
1
20
2
3
V
I D , DRAIN CURRENT (A)
DS
Figure 13. Transconductance Variation with Drain
Current and Temperature.
5
10
20
, DRAIN-SOURCE VOLTAGE (V))
40
60
80
Figure 14. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.5
R θJC (t) = r(t) * R θJC
R
=2.2 °C/W
θJC
0.3
0.2
0.2
P(pk)
0.1
0.1
0.05
t1
0.02
0.01
0.05
0.03
0.1
T -T
t2
(t)
J
C
θJC
Duty Cycle, D = t 1/t 2
Single Pulse
0.5
1
10
100
1000
=P *R
3000
10000
t ,TIME (ms)
1
Figure 15. Transient Thermal Response Curve.
NDP5060 Rev.A
TO-220 Tape and Reel Data and Package Dimensions
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12 Tubes per Bag
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FSCINT Labe l samp le
FAIRCHILD SEMICONDUCTOR CORPORATION
TO-220 Packaging Information
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Packaging type
Qty per Tube/Box
NSID:
Standard
CBVK741B019
QTY:
FDP7060
HTB:B
1080
SPEC:
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(no f l ow code )
Rail/Tube
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300
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Configuration: Figure 4.0
0.123
+0.001
-0.003
0.165
0.080
Note: All dim ensions are in inches
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
F 9852
NDP4060L
0.275
0.450
±.030
F 9852
NDP4060L
1.300
±.015
0.032
±.003
20.000
+0.031
-0.065
0.160
0.800
0.275
August 1999, Rev. B
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Scale 1:1 on letter size paper
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September 1998, Rev. A
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SPEC REV:
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TO-263AB/D2PAK Tape Leader and Trailer
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1520mm minimum or
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September 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D2PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
W
E2
B0
Tc
A0
D1
P1
User Direction of Feed
Dimensions are in millimeter
Pkg type
A0
B0
TO263AB/
D2PAK
(24mm)
10.60
+/-0.10
15.80
+/-0.10
W
24.0
+/-0.3
D0
D1
E1
E2
1.55
+/-0.05
1.60
+/-0.10
1.75
+/-0.10
F
22.25
min
11.50
+/-0.10
P1
P0
16.0
+/-0.1
4.0
+/-0.1
K0
T
4.90
+/-0.10
0.450
+/-0.150
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
Wc
0.06
+/-0.02
0.9mm
maximum
10 deg maximum
Typical
component
cavity
center line
B0
21.0
+/-0.3
Tc
0.9mm
maximum
10 deg maximum component rotation
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center line
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Component Rotation
2PAK
TO-263AB/D
Figure 4.0
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Component lateral movement
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B Min
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330
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0.795
20.2
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4.00
100
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0.961 +0.078/-0.000
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1.197
30.4
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0.941 – 0.1.079
23.9 – 27.4
August 1999, Rev. B
TO-263AB/D2PAK Tape and Reel Data and Package Dimensions, continued
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August 1998, Rev. A
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Rev. D