AOD7N65/AOI7N65 650V,7A N-Channel MOSFET General Description Product Summary The AOD7N65 & AOI7N65 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. TO252 DPAK Top View VDS 750V@150℃ ID (at VGS=10V) 7A RDS(ON) (at VGS=10V) < 1.56Ω 100% UIS Tested! 100% Rg Tested! TO251A IPAK Top View Bottom View D Bottom View D D G S G S G S D S G D S G AOD7N65 AOI7N65 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain CurrentB Pulsed Drain Current TC=100°C C Maximum 650 Units V ±30 V 7 ID 4.3 A IDM 23 Avalanche Current C IAR 3.1 A Repetitive avalanche energy C EAR 144 mJ Single pulsed avalanche energy H Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS dv/dt 288 5 178 mJ V/ns W 1.4 -50 to 150 W/ oC °C 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,G Maximum Case-to-sink A Maximum Junction-to-CaseD,F Rev 0: Feb 2012 PD TJ, TSTG TL Symbol RθJA RθCS Typical 45 Maximum 55 Units °C/W 0.5 0.5 0.7 °C/W °C/W RθJC www.aosmd.com Page 1 of 6 AOD7N65/AOI7N65 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 650 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current IGSS ID=250µA, VGS=0V, TJ=150°C 750 V ID=250µA, VGS=0V 0.67 V/ oC VDS=650V, VGS=0V 1 VDS=520V, TJ=125°C 10 Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA ±100 3.3 µA 3.9 4.5 nΑ V 1.56 Ω 1 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.5A 1.2 gFS Forward Transconductance VDS=40V, ID=3.5A 7 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current 7 A ISM Maximum Body-Diode Pulsed Current 23 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance S 0.72 780 982 1180 pF VGS=0V, VDS=25V, f=1MHz 60 86 115 pF 4 7 10 pF VGS=0V, VDS=0V, f=1MHz 1.5 3.2 5 Ω 15 19.6 24 nC SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=520V, ID=7A Qgs Gate Source Charge 4.6 nC Qgd Gate Drain Charge 8.2 nC tD(on) Turn-On DelayTime 26 ns tr Turn-On Rise Time 43 ns tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=7A,dI/dt=100A/µs,VDS=100V 290 365 440 Qrr Body Diode Reverse Recovery Charge IF=7A,dI/dt=100A/µs,VDS=100V 3.4 4.3 5.4 VGS=10V, VDS=325V, ID=7A, RG=25Ω 53 ns 32 ns ns µC A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=3.1A, VDD=150V, RG=10Ω, Starting TJ=25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0: Feb 2012 www.aosmd.com Page 2 of 6 AOD7N65/AOI7N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12 100 10V VDS=40V 10 -55°C 6.5V 6V 10 ID(A) ID (A) 8 6 4 1 5.5V 2 125°C 25°C VGS=5V 0 0.1 0 5 10 15 20 25 30 2 4 6 8 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 3 2.1 2.5 RDS(ON) (Ω Ω) 1.8 Normalized On-Resistance 2.4 VGS=10V 1.5 1.2 0.9 10 VGS=10V ID=3.5A 2 1.5 1 0.5 0 0.6 0 3 6 9 12 -100 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.2 -50 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1E+02 ID=30A 40 125°C 1E+00 1 IS (A) BVDSS (Normalized) 1E+01 1.1 125° 1E-01 25°C 1E-02 0.9 25° 1E-03 0.8 1E-04 -100 -50 0 50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature Rev 0: Feb 2012 www.aosmd.com 0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1 Page 3 of 6 AOD7N65/AOI7N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VDS=520V ID=3.5A Ciss 1000 Capacitance (pF) VGS (Volts) 12 9 6 Coss 100 Crss 10 3 1 0 0 5 10 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 0.1 30 10 VDS (Volts) Figure 8: Capacitance Characteristics 100 1000 100 1 1ms DC 10ms 0.1 Power (W) 100µs TJ(Max)=150°C TC=25°C 800 10µs RDS(ON) limited 10 ID (Amps) 1 600 400 200 TJ(Max)=150°C TC=25°C 0 0.01 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 1000 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Zθ JC Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.7°C/W 1 0.1 PD Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0: Feb 2012 www.aosmd.com Page 4 of 6 AOD7N65/AOI7N65 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8 160 Current rating ID(A) Power Dissipation (W) 200 120 80 40 0 6 4 2 0 0 25 50 75 100 125 150 0 TCASE (°C) Figure 12: Power De-rating (Note B) 25 50 75 100 125 TCASE (°C) Figure 13: Current De-rating (Note B) 150 400 TJ(Max)=150°C TA=25°C Power (W) 300 200 100 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note G) Zθ JA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=55°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note G) Rev 0: Feb 2012 www.aosmd.com Page 5 of 6 AOD7N65/AOI7N65 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + VDC - VDC DUT Qgs Vds Qgd - Vgs Ig Charge Res istive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs + VDC 90% Vdd - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI Vds 2 AR BVDSS Vds Id + Vgs Vgs VDC - Rg Vdd I AR Id DUT Vgs Vgs Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt Vds + DUT Vgs Vds - Isd Vgs Ig Rev 0: Feb 2012 L Isd + Vdd trr dI/dt IRM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6