MJF15030 (NPN), MJF15031 (PNP) Complementary Power Transistors For Isolated Package Applications Designed for general−purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis. http://onsemi.com COMPLEMENTARY SILICON POWER TRANSISTORS 8 AMPERES 150 VOLTS, 36 WATTS Features • • • • • • • • Electrically Similar to the Popular MJE15030 and MJE15031 150 VCEO(sus) 8 A Rated Collector Current No Isolating Washers Required Reduced System Cost High Current Gain−Bandwidth Product − fT = 30 MHz (Min) @ IC = 500 mAdc UL Recognized, File #E69369, to 3500 VRMS Isolation Pb−Free Packages are Available* MARKING DIAGRAM ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage RMS Isolation Voltage (Note 1) Test No. 1 Per Figure 11 Test No. 2 Per Figure 12 Test No. 3 Per Figure 13 (for 1 sec, R.H. < 30%, TA = 25_C) Collector Current − Continuous − Peak Symbol Value Unit VCEO 150 Vdc VCB 150 Vdc VEB 5 VISOL IC 1 2 TO−220 FULLPACK CASE 221D STYLE 2 3 MJF1503xG AYWW Vdc VRMS 4500 3500 1500 8 16 Adc MJF1503x = Specific Device Code x = 0 or 1 G = Pb−Free Package A = Assembly Location Y = Year WW = Work Week Base Current IB 2 Adc Total Power Dissipation (Note 2) @ TC = 25_C Derate above 25_C PD 36 0.016 W W/_C Total Power Dissipation @ TA = 25_C Derate above 25_C PD 2.0 0.016 W W/_C TJ, Tstg –65 to +150 _C Device Package Shipping Symbol Max Unit MJF15030 TO−220 FULLPACK 50 Units/Rail Thermal Resistance, Junction−to−Ambient RqJA 62.5 _C/W MJF15030G Thermal Resistance, Junction−to−Case (Note 2) RqJC 3.5 _C/W TO−220 FULLPACK 50 Units/Rail (Pb−Free) MJF15031 TO−220 FULLPACK 50 Units/Rail MJF15031G TO−220 FULLPACK (Pb−Free) 50 Units/Rail Operating and Storage Temperature Range THERMAL CHARACTERISTICS Characteristic Lead Temperature for Soldering Purposes TL 260 _C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Proper strike and creepage distance must be provided. 2. Measurement made with thermocouple contacting the bottom insulated surface (in a location beneath the die), the devices mounted on a heatsink with thermal grease and a mounting torque of ≥ 6 in. lbs. ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 5 1 Publication Order Number: MJF15030/D MJF15030 (NPN), MJF15031 (PNP) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max Unit VCEO(sus) 150 − Vdc Collector Cutoff Current (VCE = 150 Vdc, IB = 0) ICEO − 10 mAdc Collector Cutoff Current (VCB = 150 Vdc, IE = 0) ICBO − 10 mAdc Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO − 10 mAdc DC Current Gain (IC = 0.1 Adc, VCE = 2 Vdc) (IC = 2 Adc, VCE = 2 Vdc) (IC = 3 Adc, VCE = 2 Vdc) (IC = 4 Adc, VCE = 2 Vdc) hFE 40 40 40 20 − − − − − DC Current Gain Linearityy (VCE from 2 V to 20 V, IC from 0.1 A to 3 A) (NPN to PNP) hFE OFF CHARACTERISTICS Collector−Emitter Sustaining Voltage (Note 3) (IC = 10 mAdc, IB = 0) ON CHARACTERISTICS (Note 3) Typ 2 3 Collector−Emitter Saturation Voltage (IC = 1 Adc, IB = 0.1 Adc) VCE(sat) − 0.5 Vdc Base−Emitter On Voltage (IC = 1 Adc, VCE = 2 Vdc) VBE(on) − 1 Vdc fT 30 − MHz DYNAMIC CHARACTERISTICS Current Gain − Bandwidth Product (Note 4) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 10 MHz) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 4. fT = ⎪hfe⎪• ftest. 1 0.5 0.3 0.2 SINGLE PULSE RqJC(t) = r(t) RqJC TJ(pk) − TC = P(pk) RqJC(t) 0.1 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 t, TIME (ms) 100 Figure 1. Thermal Response http://onsemi.com 2 200 300 500 1K 2K 3K 5K 10K MJF15030 (NPN), MJF15031 (PNP) There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation, i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figures 2 and 3 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. IC, COLLECTOR CURRENT (AMP) 20 10 100 ms 5 3 2 5 ms dc 1 0.5 0.3 0.2 WIREBOND LIMIT THERMAL LIMIT SECONDARY BREAKDOWN LIMIT @ TC = 25°C 0.1 0.05 0.03 0.02 3 2 50 70 100 150 200 5 7 10 20 30 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Figure 2. Forward Bias Safe Operating Area 1000 Cib (NPN) 500 C, CAPACITANCE (pF) IC, COLLECTOR CURRENT (AMP) 8 5 3 VBE(off) = 9 V IC/IB = 10 TC = 25°C 2 1 0 0 Cib (PNP) 200 100 Cob (PNP) 50 30 5V 3V 1.5 V 0V 100 110 120 130 140 150 VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS) Cob (NPN) 20 10 1.5 3 hfe , SMALL−SIGNAL CURRENT GAIN 100 50 30 PNP VCE = 10 V IC = 0.5 A TC = 25°C 20 NPN 10 5 0.5 0.7 1 2 3 5 7 100 150 Figure 4. Capacitances f T, CURRENT GAIN BANDWIDTH PRODUCT (MHz) Figure 3. Reverse Bias Switching Safe Operating Area 5 7 10 30 50 VR, REVERSE VOLTAGE (VOLTS) 10 100 90 (PNP) 60 (NPN) 50 20 10 0 0.1 0.2 0.5 1 2 5 f, FREQUENCY (MHz) IC, COLLECTOR CURRENT (AMP) Figure 5. Small−Signal Current Gain Figure 6. Current Gain — Bandwidth Product http://onsemi.com 3 10 MJF15030 (NPN), MJF15031 (PNP) DC CURRENT GAIN 1K 1K VCE = 2 V 500 hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 500 TJ = 150°C 200 150 TJ = 25°C 100 70 50 TJ = −55°C 30 VCE = 2 V TJ = 150°C 200 TJ = 25°C 100 TJ = −55°C 50 20 20 10 0.1 0.2 0.5 2 1 5 10 0.1 10 0.2 0.5 1 2 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP) Figure 7a. MJF15030 NPN 5 10 Figure 7b. MJF15031 PNP “ON” VOLTAGE 1.8 TJ = 25°C V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 1.6 1.2 1 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 2 V 1.4 1 0.8 VBE(sat) @ IC/IB = 10 VCE(sat) @ IC/IB = 20 0.4 VCE(sat) @ IC/IB = 20 0.2 0.1 0.2 0.5 VBE(sat) @ IC/IB = 20 IC/IB = 10 1 2 5 0 0.1 10 2 5 10 Figure 8b. MJF15031 PNP 1 10 VCC = 80 V IC/IB = 10 TJ = 25°C 0.5 3 td (NPN, PNP) 0.2 tr (PNP) 0.1 VCC = 80 V IC/IB = 10, IB1 = IB2 ts (NPN) TJ = 25°C 5 t, TIME (s) μ t, TIME (s) μ 1 IC, COLLECTOR CURRENT (AMP) Figure 8a. MJF15030 NPN 0.05 2 ts (PNP) 1 0.5 tf (PNP) tr (NPN) 0.03 0.2 0.02 0.01 0.1 0.5 0.2 IC, COLLECTOR CURRENT (AMP) IC/IB = 10 0.2 0.5 1 2 5 0.1 0.1 10 IC, COLLECTOR CURRENT (AMP) tf (NPN) 0.2 0.3 0.5 1 2 IC, COLLECTOR CURRENT (AMP) Figure 9. Turn−On Times Figure 10. Turn−Off Times http://onsemi.com 4 5 10 MJF15030 (NPN), MJF15031 (PNP) TEST CONDITIONS FOR ISOLATION TESTS* CLIP MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE CLIP MOUNTED FULLY ISOLATED PACKAGE 0.099" MIN LEADS LEADS HEATSINK 0.099" MIN LEADS HEATSINK HEATSINK 0.110" MIN Figure 11. Clip Mounting Position for Isolation Test Number 1 Figure 12. Clip Mounting Position for Isolation Test Number 2 Figure 13. Screw Mounting Position for Isolation Test Number 3 *Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION 4−40 SCREW CLIP PLAIN WASHER HEATSINK COMPRESSION WASHER HEATSINK NUT Figure 14. Typical Mounting Techniques* Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4−40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4−40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, ON Semiconductor does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. http://onsemi.com 5 MJF15030 (NPN), MJF15031 (PNP) PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE G −T− −B− F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D−01 THRU 221D−02 OBSOLETE, NEW STANDARD 221D−03. SEATING PLANE C S Q U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M Y INCHES MIN MAX 0.625 0.635 0.408 0.418 0.180 0.190 0.026 0.031 0.116 0.119 0.100 BSC 0.125 0.135 0.018 0.025 0.530 0.540 0.048 0.053 0.200 BSC 0.124 0.128 0.099 0.103 0.101 0.113 0.238 0.258 MILLIMETERS MIN MAX 15.88 16.12 10.37 10.63 4.57 4.83 0.65 0.78 2.95 3.02 2.54 BSC 3.18 3.43 0.45 0.63 13.47 13.73 1.23 1.36 5.08 BSC 3.15 3.25 2.51 2.62 2.57 2.87 6.06 6.56 STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. MJF15030/D