SMBTA42/MMBTA42 NPN Silicon High-Voltage Transistors • Low collector-emitter saturation voltage 2 3 • Complementary types: 1 SMBTA92 / MMBTA92(PNP) • Pb-free (RoHS compliant) package 1) • Qualified according AEC Q101 Type SMBTA42/MMBTA42 Marking s1D Pin Configuration 1=B 2=E Package SOT23 3=C Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 300 Collector-base voltage VCBO 300 Emitter-base voltage VEBO 6 Collector current IC 500 Base current IB 100 Total power dissipation- Ptot 360 mW Junction temperature Tj 150 °C Storage temperature Tstg Thermal Resistance Parameter Junction - soldering point 2) Symbol RthJS V mA TS ≤ 74 °C -65 ... 150 Value ≤ 210 Unit K/W 1Pb-containing 2For package may be available upon special request calculation of RthJA please refer to Application Note Thermal Resistance 1 2007-04-19 SMBTA42/MMBTA42 Electrical Characteristics at TA = 25°C, unless otherwise specified Symbol Values Unit Parameter min. typ. max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO 300 V IC = 1 mA, IB = 0 Collector-base breakdown voltage V(BR)CBO 300 - - V(BR)EBO 6 - - IC = 100 µA, IE = 0 Emitter-base breakdown voltage IE = 100 µA, IC = 0 Collector-base cutoff current µA I CBO VCB = 200 V, IE = 0 - - 0.1 VCB = 200 V, IE = 0 , T A = 150 °C - - 20 - - 100 Emitter-base cutoff current I EBO nA VEB = 5 V, IC = 0 DC current gain1) - h FE IC = 1 mA, VCE = 10 V 25 - - IC = 10 mA, VCE = 10 V 40 - - IC = 30 mA, VCE = 10 V 40 - - VCEsat - - 0.5 VBEsat - - 0.9 50 70 - MHz - - 3 pF Collector-emitter saturation voltage1) V IC = 20 mA, IB = 2 mA Base emitter saturation voltage 1) IC = 20 mA, IB = 2 mA AC Characteristics Transition frequency fT IC = 10 MHz, VCE = 20 V, f = 100 MHz Collector-base capacitance Ccb VCB = 20 V, f = 1 MHz 1Pulse test: t < 300µs; D < 2% 2 2007-04-19 SMBTA42/MMBTA42 DC current gain hFE = ƒ(IC) VCE = 10 V 10 3 Operating range I C = ƒ(VCEO) TA = 25°C, D = 0 SMBTA 42/43 EHP00844 10 3 SMBTA 42/43 EHP00841 mA 5 ΙC h FE 10 2 10 10 µs 5 2 10 1 100 µs 1 ms 5 100 ms 5 10 1 500 ms DC 10 5 0 5 10 0 -1 10 5 10 0 5 10 1 5 10 2 mA 10 10 -1 10 0 3 5 10 1 5 10 2 ΙC Collector cutoff current ICBO = ƒ(TA) VCBO = 160 V VCE = 10V SMBTA 42/43 EHP00843 10 4 nA mA SMBTA 42/43 EHP00842 ΙC 10 10 3 V CEO Collector current I C = ƒ(VBE) 10 3 V 5 Ι CBO 2 max 10 3 5 5 10 2 5 10 1 5 typ 10 1 5 10 0 10 0 5 5 10 -1 10 -1 0 0.5 V 1.0 1.5 0 V BE 50 C 150 100 TA 3 2007-04-19 SMBTA42/MMBTA42 Transition frequency fT = ƒ(IC) VCE = 10 V, f = 100 MHz 10 3 Collector-base capacitance Ccb = ƒ(V CB) Emitter-base capacitance Ceb = ƒ(VEB) SMBTA 42/43 EHP00839 90 pF MHz CCB(C EB) fT 70 60 50 10 2 40 CEB 5 30 20 10 CCB 10 1 10 0 5 10 1 5 10 2 mA 5 0 0 10 3 4 8 12 16 V 22 VCB(VEB) ΙC Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/P totDC = ƒ(tp) 10 3 400 mW SMBTA 42/43 Ptot max 5 Ptot DC EHP00840 D= 320 tp T 280 Ptot tp T 10 2 240 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 5 200 160 10 1 120 5 80 40 0 0 15 30 45 60 75 90 105 120 °C TS 10 0 10 -6 150 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2007-04-19 Package SOT23 SMBTA42/MMBTA42 0.4 +0.1 -0.05 1) 2 0.08...0.1 C 0.95 1.3 ±0.1 1 2.4 ±0.15 3 0.1 MAX. 10˚ MAX. B 1 ±0.1 10˚ MAX. 2.9 ±0.1 0.15 MIN. Package Outline A 5 0...8˚ 1.9 0.2 0.25 M B C M A 1) Lead width can be 0.6 max. in dambar area Foot Print 0.8 0.9 1.3 0.9 0.8 1.2 Marking Layout (Example) Manufacturer EH s 2005, June Date code (YM) Pin 1 BCW66 Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel 4 0.2 8 2.13 2.65 0.9 Pin 1 1.15 3.15 5 2007-04-19 SMBTA42/MMBTA42 Edition 2006-02-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2007. All Rights Reserved. Attention please! The information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office ( www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 6 2007-04-19