Order this document by MPSW05/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol MPSW05 MPSW06 Unit Collector – Emitter Voltage VCEO 60 80 Vdc Collector – Base Voltage VCBO 60 80 Vdc Emitter – Base Voltage VEBO 4.0 Vdc Collector Current — Continuous IC 500 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 1.0 8.0 Watt mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 2.5 20 Watts mW/°C TJ, Tstg – 55 to +150 °C Symbol Max Unit Thermal Resistance, Junction to Ambient RqJA 125 °C/W Thermal Resistance, Junction to Case RqJC 50 °C/W Operating and Storage Junction Temperature Range 3 CASE 29–05, STYLE 1 TO–92 (TO–226AE) THERMAL CHARACTERISTICS Characteristic ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 60 80 — — 4.0 — — — 0.5 0.5 — — 0.1 0.1 — 0.1 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) V(BR)CEO MPSW05 MPSW06 Emitter – Base Breakdown Voltage (IE = 100 mAdc, IC = 0) V(BR)EBO Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) MPSW05 MPSW06 Collector Cutoff Current (VCB = 40 Vdc, IE = 0) (VCB = 60 Vdc, IE = 0) MPSW05 MPSW06 µAdc ICBO IEBO Vdc µAdc ICES Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width Vdc µAdc v 300 ms, Duty Cycle v 2.0%. Preferred devices are Motorola recommended choices for future use and best overall value. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max 80 60 — — Unit ON CHARACTERISTICS(1) DC Current Gain (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 250 mAdc, VCE = 1.0 Vdc) hFE — Collector – Emitter Saturation Voltage (IC = 250 mAdc, IB = 10 mAdc) VCE(sat) — 0.4 Vdc Base–Emitter Saturation Voltage (IC = 250 mAdc, VCE = 5.0 Vdc) VBE(sat) — 1.2 Vdc fT 50 — MHz Cobo — 12 pF SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 200 mAdc, VCE = 5.0 Vdc, f = 20 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 400 hFE , DC CURRENT GAIN TJ = 125°C VCE = 1.0 V 200 25°C –55°C 100 80 60 40 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 100 200 300 500 1.0 1.0 TJ = 25°C 0.6 0.8 IC = 10 mA 50 mA 100 mA 250 mA 500 mA 0.4 0.2 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.05 0.1 0.2 0.5 2.0 5.0 1.0 IB, BASE CURRENT (mA) 10 20 Figure 2. Collector Saturation Region 2 TJ = 25°C 0.8 V, VOLTAGE (VOLTS) VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 50 0 0.5 1.0 2.0 5.0 10 50 100 20 IC, COLLECTOR CURRENT (mA) 200 500 Figure 3. “On” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 80 –0.8 TJ = 25°C 60 –1.2 40 C, CAPACITANCE (pF) θ VB, TEMPERATURE COEFFICIENT (mV/°C) –1.6 θVB for VBE –2.0 –2.4 Cibo 20 10 8.0 6.0 –2.8 0.5 1.0 2.0 5.0 20 50 10 100 IC, COLLECTOR CURRENT (mA) 200 Cobo 4.0 0.1 500 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 100 Figure 5. Capacitance 300 200 VCE = 2.0 V TJ = 25°C IC, COLLECTOR CURRENT (mA) f T, CURRENT–GAIN — BANDWIDTH PRODUCT (MHz) Figure 4. Base–Emitter Temperature Coefficient 50 100 70 50 DUTY CYCLE ≤ 10% 2k 1.0 ms 1k 100 µs 500 TA = 25°C 200 100 50 20 30 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) 200 Figure 6. Current–Gain — Bandwidth Product Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 1.0 TC = 25°C 1.0 s dc dc CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT MPSW05 MPSW06 2.0 5.0 10 20 60 80 100 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) Figure 7. Active Region — Safe Operating Area 3 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSIONS D AND J APPLY BETWEEN L AND K MIMIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R SEATING PLANE P L F K X X DIM A B C D F G H J K L N P R V D G H J V 1 2 3 N C SECTION X–X N CASE 029–05 (TO–226AE) ISSUE AD INCHES MIN MAX 0.175 0.205 0.290 0.310 0.125 0.165 0.018 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.018 0.024 0.500 ––– 0.250 ––– 0.080 0.105 ––– 0.100 0.135 ––– 0.135 ––– MILLIMETERS MIN MAX 4.44 5.21 7.37 7.87 3.18 4.19 0.46 0.56 0.41 0.48 1.15 1.39 2.42 2.66 0.46 0.61 12.70 ––– 6.35 ––– 2.04 2.66 ––– 2.54 3.43 ––– 3.43 ––– STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola reserves the right to make changes without further notice to any products herein. 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