Transistors SMD Type NPN Transistors BCP68 (KCP68) Unit:mm SOT-223 。 10 6.50±0.2 3.00±0.1 ■ Features 7.0±0.3 ● High current (max. 1 A) ● Low voltage (max. 20 V) 3.50±0.2 4 ● Complements to BCP69 1 2 3 0.250 2.30 (typ) 1.80 (max) 2,4 Gauge Plane 0.02 ~ 0.1 1 1.Base 2.Collector 0.70±0.1 3.Emitter 4.Collector 4.60 (typ) 3 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Collector - Base Voltage VCBO 32 Collector - Emitter Voltage VCEO 20 Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 1 Collector Current - Pulse ICP 2 Base Current - Pulse IBP 0.2 Collector Power Dissipation PC 1.37 Thermal Resistance from Junction to Ambient RθJA 91 Thermal Resistance from Junction to Soldering Point RθJS 10 TJ 150 Tstg -65 to 150 Junction Temperature Storage Temperature range Unit V A W ℃/W ℃ www.kexin.com.cn 1 Transistors SMD Type NPN Transistors BCP68 (KCP68) ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Collector- base breakdown voltage VCBO Ic= 100 μA， IE=0 32 Collector- emitter breakdown voltage VCEO Ic= 1 mA， IB=0 20 Emitter - base breakdown voltage VEBO IE= 100μA， IC=0 5 Collector-base cut-off current ICBO Emitter cut-off current IEBO Collector-emitter saturation voltage VCE(sat) Base - emitter saturation voltage VBE(sat) Base - emitter voltage VBE DC current gain hFE Collector capacitance Cob Transition frequency fT Typ Max Unit V VCB= 25 V , IE=0 100 nA VCB= 25 V , IE=0,TJ=150℃ 10 uA VEB= 5V , IC=0 100 nA IC=1 A, IB=100mA 0.5 IC=1 A, IB=100mA 1.2 VCE= 10V, IC= 5mA 0.62 VCE= 1V, IC= 1 A 1 VCE= 10V, IC= 5mA 50 VCE= 1V, IC= 500mA 85 VCE= 1V, IC= 1 A 60 VCB= 5V, IE= Ie=0,f=1MHz VCE= 5V, IC= 10mA,f=100MHz V 375 38 pF 40 MHz ■ Classification of hfe(2) Type BCP68 BCP68-16 BCP68-25 Range 85-375 100-250 160-375 Marking BCP68 BCP68-16 BCP68-25 ■ Typical Characterisitics 300 hFE 250 200 150 100 50 0 10−1 VCE = 1 V. 2 www.kexin.com.cn 1 10 102 Fig.1 DC current gain; typical values. 103 IC (mA) 104