DS2906SZ DS2906SZ Rectifier Diode Replaces July 2000 version, DS4186-4.1 DS4186-5.0 October 2001 FEATURES KEY PARAMETERS ■ Double Side Cooling VRRM 4000V ■ High Surge Capability IF(AV) 5651A IFSM APPLICATIONS ■ Rectification ■ Freewheel Diode ■ DC Motor Control ■ Power Supplies ■ Welding ■ Battery Chargers 83000A VOLTAGE RATINGS Type Number Repetitive Peak Reverse Voltage VRRM V DS2906SZ40 4000 DS2906SZ39 3900 DS2906SZ38 3800 DS2906SZ37 3700 DS2906SZ36 3600 DS2906SZ35 3500 Lower voltage grades available Conditions VRSM = VRRM + 100V Outline type code: Z See Package Details for further information. Fig. 1 Package outline ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table, e.g.: DS2906SZ39 Note: Please use the complete part number when ordering and quote this number in any future correspondance relating to your order. 1/7 www.dynexsemi.com DS2906SZ CURRENT RATINGS Tcase = 75oC unless otherwise stated Symbol Parameter Conditions Max. Units 5651 A Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 8877 A Continuous (direct) forward current - 8208 A 3707 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 5821 A Continuous (direct) forward current - 4976 A Conditions Max. Units 4350 A IF Half wave resistive load Tcase = 100oC unless otherwise stated Symbol Parameter Double Side Cooled Half wave resistive load IF(AV) Mean forward current IF(RMS) RMS value - 6830 A Continuous (direct) forward current - 6160 A 2795 A IF Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 4390 A Continuous (direct) forward current - 3640 A IF Half wave resistive load 2/7 www.dynexsemi.com DS2906SZ SURGE RATINGS Parameter Symbol IFSM I2t IFSM I2t Surge (non-repetitive) forward current I2t for fusing Surge (non-repetitive) forward current Conditions Max. Units 10ms half sine; Tcase = 150oC 66.5 kA VR = 50% VRRM - 1/4 sine 22.0 x 106 A2s 10ms half sine; Tcase = 150oC 83 kA VR = 0 34.5 x 106 A2s I2t for fusing THERMAL AND MECHANICAL DATA Conditions Min. Max. dc - 0.0065 o Anode dc - 0.013 o Cathode dc - 0.013 o C/W Double side - 0.001 o C/W Single side - 0.002 o C/W Forward (conducting) - 160 o Reverse (blocking) - 150 o Storage temperature range –55 150 o Clamping force 75.0 91.0 kN Min. Max. Units Parameter Symbol Double side cooled Rth(j-c) Thermal resistance - junction to case Units C/W C/W Single side cooled Rth(c-h) Tvj Tstg - Thermal resistance - case to heatsink Clamping force 83.0kN with mounting compound C Virtual junction temperature C C CHARACTERISTICS Symbol Parameter Conditions VFM Forward voltage At 3000A peak, Tcase = 25oC - 1.06 V IRM Peak reverse current At VRRM, Tcase = 150oC - 400 mA VTO Threshold voltage At Tvj = 150˚C - 0.78 V Slope resistance At Tvj = 150˚C - 0.0763 mΩ rT 3/7 www.dynexsemi.com DS2906SZ CURVES 8000 7000 6000 6000 Mean power dissipation - (W) Instantaneous forward current, IF - (A) 7000 5000 4000 Tj = 150˚C 3000 Tj = 25˚C 5000 4000 3000 2000 2000 0 0.5 dc 1/2 wave 3 phase 6 phase 1000 1000 0 0.6 0.7 0.8 0.9 1 1.1 1.2 Instantaneous forward voltage, VF - (V) 1.3 0 1.4 VFM = A + Bln (IF) + C.IF+D.√IF 2000 3000 4000 5000 6000 Mean on-state current, IT(AV) - (A) Fig. 2 Maximum (limit) forward characteristics VFM Equation:- 1000 Fig. 3 Power loss curves Where A = –0.01591 B = 0.113682 C = 8.04 x 10–5 D = –0.00284 these values are valid for Tj = 125˚C for IF 500A to 7000A 4/7 www.dynexsemi.com DS2906SZ 350 14000 300 Reverse recovery current, IRR - (A) 16000 Stored charge, Qs - (µC) 12000 10000 8000 6000 4000 250 200 150 100 50 2000 0 0 1 2 3 4 5 6 7 Rate of decay of forward current, dIf/dt - (A/µs) 8 Fig. 4 Stored charge 0.1 Conduction d.c. Halfwave 3 phase 120˚ 6 phase 60˚ 0 0 1 2 3 4 5 6 7 Rate of decay of forward current, dIf/dt - (A/µs) 8 Fig. 5 Reverse recovery current Effective thermal resistance Junction to case ˚C/W Double side 0.0065 0.0072 0.0073 0.0076 Single side 0.013 0.0137 0.0138 0.0141 Thermal impedance - (˚C/W) Anode side cooled 0.01 Double side cooled 0.001 0.0001 0.001 0.01 0.1 1 Time - (s) 10 100 Fig. 6 Maximum (limit) transient thermal impedance junction to case - (˚C/W) 5/7 www.dynexsemi.com DS2906SZ PACKAGE DETAILS For further package information, please contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Holes Ø3.6 ± 0.5 x 2.0 deep (One in each electrode) Cathode Ø151 max 37.5 max Ø100 Ø100 Ø148 max Anode Nominal weight: 2800g Clamping force: 83kN ±10% Package outline type code: Z 6/7 www.dynexsemi.com DS2906SZ POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink / clamping systems in line with advances in device types and the voltage and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the up to date CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete solution (PACs). DEVICE CLAMPS Disc devices require the correct clamping force to ensure their safe operation. The PACs range offers a varied selection of pre-loaded clamps to suit all of our manufactured devices. This include cube clamps for single side cooling of ‘T’ 22mm Clamps are available for single or double side cooling, with high insulation versions for high voltage assemblies. Please refer to our application note on device clamping, AN4839 HEATSINKS Power Assembly has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance or our semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest Sales Representative or Customer Services. http://www.dynexsemi.com e-mail: [email protected] HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. © Dynex Semiconductor 2001 Publication No. DS4186-5 Issue No. 5.0 October 2001 TECHNICAL DOCUMENTATION – NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. 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