BSM 400 GB 60 DN2 IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package with insulated metal base plate Type VCE IC Package Ordering Code BSM 400 GB 60 DN2 600V 475A HALF-BRIDGE 2 C67070-A2120-A67 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 kΩ Values 600 Unit V 600 Gate-emitter voltage VGE DC collector current IC ± 20 A TC = 25 °C 475 TC = 60 °C 400 Pulsed collector current, tp = 1 ms ICpuls TC = 25 °C 950 TC = 60 °C 800 Ptot Power dissipation per IGBT TC = 25 °C W 1400 Chip temperature Tj Storage temperature Tstg Thermal resistance, chip case RthJC ≤ 0.09 Diode thermal resistance, chip case RthJCD ≤ 0.18 Insulation test voltage, t = 1min. Vis 2500 Vac Creepage distance - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - Semiconductor Group 1 + 150 °C -40 ... + 125 K/W sec 40 / 125 / 56 Apr-25-1997 BSM 400 GB 60 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 9 mA V 4.5 5.5 6.5 Tj = 25 °C - 2.1 2.55 Tj = 125 °C - 2.2 2.65 Collector-emitter saturation voltage VCE(sat) VGE = 15 V IC = 400 A Zero gate voltage collector current ICES mA VCE = 600 V, VGE = 0 V, Tj = 25 °C - 5 - VCE = 600 V, VGE = 0 V, Tj = 125 °C - 25 - Gate-emitter leakage current IGES VGE = 20 V, VCE = 0 V µA - - 1 AC Characteristics Transconductance gfs VCE = 20 V, IC = 400 A Input capacitance 100 nF - 22 - - 2.5 - - 1.5 - Crss VCE = 25 V, VGE = 0 V, f = 1 MHz Semiconductor Group - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S 2 Apr-25-1997 BSM 400 GB 60 DN2 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 °C Turn-on delay time td(on) ns VCC = 300 V, VGE = 15 V, IC = 400 A RGon = 4.7 Ω Rise time - 200 - - 190 - - 680 - - 510 - tr VCC = 300 V, VGE = 15 V, IC = 400 A RGon = 4.7 Ω Turn-off delay time td(off) VCC = 300 V, VGE = -15 V, IC = 400 A RGoff = 4.7 Ω Fall time tf VCC = 300 V, VGE = -15 V, IC = 400 A RGoff = 4.7 Ω Free-Wheel Diode Diode forward voltage VF V IF = 400 A, VGE = 0 V, Tj = 25 °C - 1.9 2.4 IF = 400 A, VGE = 0 V, Tj = 125 °C - 1.7 - Reverse recovery time trr ns IF = 400 A, VR = -300 V, VGE = 0 V diF/dt = -2000 A/µs, Tj = 125 °C Reverse recovery charge - 170 - Qrr µC IF = 400 A, VR = -300 V, VGE = 0 V diF/dt = -2000 A/µs, Tj = 125 °C Semiconductor Group - 3 15 - Apr-25-1997 BSM 400 GB 60 DN2 Power dissipation Ptot = ƒ(TC) parameter: Tj ≤ 150 °C Safe operating area IC = ƒ(VCE) parameter: D = 0, TC = 25°C , Tj ≤ 150 °C 10 4 1500 W A 1300 Ptot IC 1200 tp = 60.0µs 10 3 1100 100 µs 1000 900 800 10 2 700 1 ms 600 500 10 1 400 10 ms 300 200 100 0 0 DC 10 20 40 60 80 100 120 °C 0 160 10 0 10 1 10 2 V 10 TC VCE Collector current IC = ƒ(TC) parameter: VGE ≥ 15 V , Tj ≤ 150 °C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T IGBT 10 0 500 K/W A IC 3 400 ZthJC 10 -1 350 10 -2 300 250 D = 0.50 10 200 -3 0.20 0.10 150 0.05 10 -4 100 0.02 single pulse 0.01 50 0 0 20 40 60 80 100 120 °C 160 TC Semiconductor Group 10 -5 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 4 Apr-25-1997 BSM 400 GB 60 DN2 Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 250 µs, Tj = 25 °C parameter: tp = 250 µs, Tj = 125 °C 800 A IC 600 800 A 17V 15V 13V 11V 9V 7V IC 600 500 500 400 400 300 300 200 200 100 100 0 0 1 2 3 V 0 0 5 VCE 17V 15V 13V 11V 9V 7V 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 250 µs, VCE = 20 V 800 A IC 600 500 400 300 200 100 0 0 2 4 Semiconductor Group 6 8 10 V 14 VGE 5 Apr-25-1997 BSM 400 GB 60 DN2 Typ. capacitances Typ. gate charge VGE = ƒ(QGate) parameter: IC puls = 400 A C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 100 V 14 300 V Ciss 10 1 12 10 Coss 8 Crss 10 0 6 4 2 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 µC 10 -1 0 3.2 5 10 15 20 25 30 QGate V 40 VCE Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150°C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150°C parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH 2.5 12 ICpuls/IC ICsc/IC di/dt = 500A/µs 1500A/µs 2500A/µs 8 1.5 6 1.0 4 ° allowed numbers of short circuit: <1000 ° time between short 2 circuit: >1s 0.5 0.0 0 0 100 200 Semiconductor Group 300 400 500 600 V 800 VCE 6 0 100 200 300 400 500 600 V 800 VCE Apr-25-1997 BSM 400 GB 60 DN2 Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125°C t = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω par.: VCE = 300 V, VGE = ± 15 V, IC = 400 A 10 4 10 4 ns ns t t 10 3 tdoff 10 3 tdoff tf tf tr tr tdon tdon 10 2 10 1 0 10 2 200 400 600 A 10 1 0 1000 10 IC Ω 30 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125°C E = f (RG) , inductive load , Tj = 125°C par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω par.: VCE = 300V, VGE = ± 15 V, IC = 400 A 120 120 Eoff mWs mWs E E 80 80 60 60 Eoff Eon 40 40 Eon 20 0 0 20 200 400 600 A 1000 IC Semiconductor Group 7 0 0 10 Ω 30 RG Apr-25-1997 BSM 400 GB 60 DN2 Forward characteristics of fast recovery Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T reverse diode IF = f(VF) parameter: Tj 10 0 800 K/W A IF Diode ZthJC 600 10 -1 500 10 -2 400 D = 0.50 Tj=125°C 0.20 300 0.10 Tj=25°C 200 0.05 10 -3 0.02 single pulse 0.01 100 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 10 -3 10 -2 10 -1 s 10 0 tp VF Semiconductor Group 10 -4 -5 10 8 Apr-25-1997 BSM 400 GB 60 DN2 Circuit Diagram Package Outlines Dimensions in mm Weight: 420 g Semiconductor Group 9 Apr-25-1997