Siemens BSM400GB60DN2 Igbt power module (half-bridge including fast free-wheeling diodes package with insulated metal base plate) Datasheet

BSM 400 GB 60 DN2
IGBT Power Module
Preliminary data
• Half-bridge
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
VCE
IC
Package
Ordering Code
BSM 400 GB 60 DN2
600V
475A
HALF-BRIDGE 2
C67070-A2120-A67
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
Collector-gate voltage
VCGR
RGE = 20 kΩ
Values
600
Unit
V
600
Gate-emitter voltage
VGE
DC collector current
IC
± 20
A
TC = 25 °C
475
TC = 60 °C
400
Pulsed collector current, tp = 1 ms
ICpuls
TC = 25 °C
950
TC = 60 °C
800
Ptot
Power dissipation per IGBT
TC = 25 °C
W
1400
Chip temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip case
RthJC
≤ 0.09
Diode thermal resistance, chip case
RthJCD
≤ 0.18
Insulation test voltage, t = 1min.
Vis
2500
Vac
Creepage distance
-
20
mm
Clearance
-
11
DIN humidity category, DIN 40 040
-
F
IEC climatic category, DIN IEC 68-1
-
Semiconductor Group
1
+ 150
°C
-40 ... + 125
K/W
sec
40 / 125 / 56
Apr-25-1997
BSM 400 GB 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 9 mA
V
4.5
5.5
6.5
Tj = 25 °C
-
2.1
2.55
Tj = 125 °C
-
2.2
2.65
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V
IC = 400 A
Zero gate voltage collector current
ICES
mA
VCE = 600 V, VGE = 0 V, Tj = 25 °C
-
5
-
VCE = 600 V, VGE = 0 V, Tj = 125 °C
-
25
-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
µA
-
-
1
AC Characteristics
Transconductance
gfs
VCE = 20 V, IC = 400 A
Input capacitance
100
nF
-
22
-
-
2.5
-
-
1.5
-
Crss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
-
Coss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
-
Ciss
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
S
2
Apr-25-1997
BSM 400 GB 60 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
Unit
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
ns
VCC = 300 V, VGE = 15 V, IC = 400 A
RGon = 4.7 Ω
Rise time
-
200
-
-
190
-
-
680
-
-
510
-
tr
VCC = 300 V, VGE = 15 V, IC = 400 A
RGon = 4.7 Ω
Turn-off delay time
td(off)
VCC = 300 V, VGE = -15 V, IC = 400 A
RGoff = 4.7 Ω
Fall time
tf
VCC = 300 V, VGE = -15 V, IC = 400 A
RGoff = 4.7 Ω
Free-Wheel Diode
Diode forward voltage
VF
V
IF = 400 A, VGE = 0 V, Tj = 25 °C
-
1.9
2.4
IF = 400 A, VGE = 0 V, Tj = 125 °C
-
1.7
-
Reverse recovery time
trr
ns
IF = 400 A, VR = -300 V, VGE = 0 V
diF/dt = -2000 A/µs, Tj = 125 °C
Reverse recovery charge
-
170
-
Qrr
µC
IF = 400 A, VR = -300 V, VGE = 0 V
diF/dt = -2000 A/µs, Tj = 125 °C
Semiconductor Group
-
3
15
-
Apr-25-1997
BSM 400 GB 60 DN2
Power dissipation
Ptot = ƒ(TC)
parameter: Tj ≤ 150 °C
Safe operating area
IC = ƒ(VCE)
parameter: D = 0, TC = 25°C , Tj ≤ 150 °C
10 4
1500
W
A
1300
Ptot
IC
1200
tp = 60.0µs
10 3
1100
100 µs
1000
900
800
10 2
700
1 ms
600
500
10 1
400
10 ms
300
200
100
0
0
DC
10
20
40
60
80
100
120
°C
0
160
10
0
10
1
10
2
V 10
TC
VCE
Collector current
IC = ƒ(TC)
parameter: VGE ≥ 15 V , Tj ≤ 150 °C
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
IGBT
10 0
500
K/W
A
IC
3
400
ZthJC
10 -1
350
10 -2
300
250
D = 0.50
10
200
-3
0.20
0.10
150
0.05
10 -4
100
0.02
single pulse
0.01
50
0
0
20
40
60
80
100
120
°C
160
TC
Semiconductor Group
10 -5
-5
10
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
4
Apr-25-1997
BSM 400 GB 60 DN2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
IC = f (VCE)
parameter: tp = 250 µs, Tj = 25 °C
parameter: tp = 250 µs, Tj = 125 °C
800
A
IC
600
800
A
17V
15V
13V
11V
9V
7V
IC
600
500
500
400
400
300
300
200
200
100
100
0
0
1
2
3
V
0
0
5
VCE
17V
15V
13V
11V
9V
7V
1
2
3
V
5
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 250 µs, VCE = 20 V
800
A
IC
600
500
400
300
200
100
0
0
2
4
Semiconductor Group
6
8
10
V
14
VGE
5
Apr-25-1997
BSM 400 GB 60 DN2
Typ. capacitances
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 400 A
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 2
20
V
nF
VGE
16
C
100 V
14
300 V
Ciss
10 1
12
10
Coss
8
Crss
10 0
6
4
2
0
0.0
0.4
0.8
1.2
1.6
2.0
2.4
µC
10 -1
0
3.2
5
10
15
20
25
30
QGate
V
40
VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150°C
parameter: VGE = 15 V
ICsc = f(VCE) , Tj = 150°C
parameter: VGE = ± 15 V, tSC ≤ 10 µs, L < 25 nH
2.5
12
ICpuls/IC
ICsc/IC
di/dt = 500A/µs
1500A/µs
2500A/µs
8
1.5
6
1.0
4
° allowed numbers of
short circuit: <1000
° time between short
2 circuit: >1s
0.5
0.0
0
0
100
200
Semiconductor Group
300
400
500
600
V
800
VCE
6
0
100
200
300
400
500
600
V
800
VCE
Apr-25-1997
BSM 400 GB 60 DN2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125°C
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω
par.: VCE = 300 V, VGE = ± 15 V, IC = 400 A
10 4
10 4
ns
ns
t
t
10 3
tdoff
10 3
tdoff
tf
tf
tr
tr
tdon
tdon
10 2
10 1
0
10 2
200
400
600
A
10 1
0
1000
10
IC
Ω
30
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 300 V, VGE = ± 15 V, RG = 4.7 Ω
par.: VCE = 300V, VGE = ± 15 V, IC = 400 A
120
120
Eoff
mWs
mWs
E
E
80
80
60
60
Eoff
Eon
40
40
Eon
20
0
0
20
200
400
600
A
1000
IC
Semiconductor Group
7
0
0
10
Ω
30
RG
Apr-25-1997
BSM 400 GB 60 DN2
Forward characteristics of fast recovery
Transient thermal impedance
Zth JC = ƒ(tp)
parameter: D = tp / T
reverse diode IF = f(VF)
parameter: Tj
10 0
800
K/W
A
IF
Diode
ZthJC
600
10 -1
500
10 -2
400
D = 0.50
Tj=125°C
0.20
300
0.10
Tj=25°C
200
0.05
10 -3
0.02
single pulse
0.01
100
0
0.0
0.5
1.0
1.5
2.0
V
3.0
10
-4
10
-3
10
-2
10
-1
s 10
0
tp
VF
Semiconductor Group
10 -4
-5
10
8
Apr-25-1997
BSM 400 GB 60 DN2
Circuit Diagram
Package Outlines
Dimensions in mm
Weight: 420 g
Semiconductor Group
9
Apr-25-1997
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