Yea Shin MMBD914 Highâ speed switching diode Datasheet

DATA SHEET
MMBD914
SEMICONDUCTOR
High−Speed Switching
Diode
H
SOT–23 (TO–236AB)
Features
3
• Pb−Free Package May be Available. The G−Suffix Denotes a
Pb−Free Lead Finish
5D
MAXIMUM RATINGS
Symbol
Value
Unit
Reverse Voltage
VR
100
Vdc
Forward Current
IF
200
mAdc
IFM(surge)
500
mAdc
Symbol
Max
Unit
PD
225
mW
1.8
mW/°C
RqJA
556
°C/W
PD
300
mW
2.4
mW/°C
Rating
Peak Forward Surge Current
1
2
3
CATHODE
1
ANODE
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
FR–5 Board (Note 1.)
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Total Device Dissipation
Alumina Substrate (Note 2.)
TA = 25°C
Derate above 25°C
5D = Device Code
ORDERING INFORMATION
Device
MMBD914
Thermal Resistance,
Junction to Ambient
RqJA
417
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to
+150
°C
Package
SOT−23
Shipping†
3000/Tape & Reel
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
V(BR)
100
–
Vdc
–
–
25
5.0
nAdc
mAdc
OFF CHARACTERISTICS
Reverse Breakdown Voltage
(IR = 100 mAdc)
Reverse Voltage Leakage Current
(VR = 20 Vdc)
(VR = 75 Vdc)
IR
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
–
4.0
pF
Forward Voltage
(IF = 10 mAdc)
VF
–
1.0
Vdc
Reverse Recovery Time
(IF = IR = 10 mAdc) (Figure 1)
trr
–
4.0
ns
1. FR–5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://www.yeashin.com
1
REV.02 20120305
DEVICE CHARACTERISTICS
MMBD914
820 Ω
+10 V
2k
0.1 µF
100 µH
tp
tr
IF
0.1 µF
IF
t
trr
10%
t
DUT
50 Ω OUTPUT
PULSE
GENERATOR
50 Ω INPUT
SAMPLING
OSCILLOSCOPE
90%
iR(REC) = 1 mA
IR
VR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
INPUT SIGNAL
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
10
TA = 85°C
I R , REVERSE CURRENT (m A)
I F, FORWARD CURRENT (mA)
100
TA = -40°C
10
TA = 25°C
1.0
0.2
0.4
0.6
0.8
1.0
TA = 85°C
0.1
TA = 55°C
0.01
0.001
1.2
TA = 125°C
1.0
TA = 25°C
10
0
20
30
VF, FORWARD VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Forward Voltage
Figure 3. Leakage Current
C D , DIODE CAPACITANCE (pF)
0.1
TA = 150°C
40
4.0
0
2.0
4.0
6.0
8.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
http://www.yeashin.com
2
REV.02 20120305
50
PACKAGE OUTLINE & DIMENSIONS
MMBD914
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
J
K
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
http://www.yeashin.com
inches
mm
3
REV.02 20120305
Similar pages