DATA SHEET MMBD914 SEMICONDUCTOR High−Speed Switching Diode H SOT–23 (TO–236AB) Features 3 • Pb−Free Package May be Available. The G−Suffix Denotes a Pb−Free Lead Finish 5D MAXIMUM RATINGS Symbol Value Unit Reverse Voltage VR 100 Vdc Forward Current IF 200 mAdc IFM(surge) 500 mAdc Symbol Max Unit PD 225 mW 1.8 mW/°C RqJA 556 °C/W PD 300 mW 2.4 mW/°C Rating Peak Forward Surge Current 1 2 3 CATHODE 1 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board (Note 1.) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate (Note 2.) TA = 25°C Derate above 25°C 5D = Device Code ORDERING INFORMATION Device MMBD914 Thermal Resistance, Junction to Ambient RqJA 417 °C/W Junction and Storage Temperature Range TJ, Tstg –55 to +150 °C Package SOT−23 Shipping† 3000/Tape & Reel ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max Unit V(BR) 100 – Vdc – – 25 5.0 nAdc mAdc OFF CHARACTERISTICS Reverse Breakdown Voltage (IR = 100 mAdc) Reverse Voltage Leakage Current (VR = 20 Vdc) (VR = 75 Vdc) IR Diode Capacitance (VR = 0, f = 1.0 MHz) CT – 4.0 pF Forward Voltage (IF = 10 mAdc) VF – 1.0 Vdc Reverse Recovery Time (IF = IR = 10 mAdc) (Figure 1) trr – 4.0 ns 1. FR–5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. http://www.yeashin.com 1 REV.02 20120305 DEVICE CHARACTERISTICS MMBD914 820 Ω +10 V 2k 0.1 µF 100 µH tp tr IF 0.1 µF IF t trr 10% t DUT 50 Ω OUTPUT PULSE GENERATOR 50 Ω INPUT SAMPLING OSCILLOSCOPE 90% iR(REC) = 1 mA IR VR OUTPUT PULSE (IF = IR = 10 mA; measured at iR(REC) = 1 mA) INPUT SIGNAL Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA. Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA. Notes: 3. tp » trr Figure 1. Recovery Time Equivalent Test Circuit 10 TA = 85°C I R , REVERSE CURRENT (m A) I F, FORWARD CURRENT (mA) 100 TA = -40°C 10 TA = 25°C 1.0 0.2 0.4 0.6 0.8 1.0 TA = 85°C 0.1 TA = 55°C 0.01 0.001 1.2 TA = 125°C 1.0 TA = 25°C 10 0 20 30 VF, FORWARD VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Forward Voltage Figure 3. Leakage Current C D , DIODE CAPACITANCE (pF) 0.1 TA = 150°C 40 4.0 0 2.0 4.0 6.0 8.0 VR, REVERSE VOLTAGE (VOLTS) Figure 4. Capacitance http://www.yeashin.com 2 REV.02 20120305 50 PACKAGE OUTLINE & DIMENSIONS MMBD914 SOT-23 NOTES: A 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. L 3 1 V 2 B S DIM G A B C D G H J K L S V C D H J K INCHES MIN MAX 0.1102 0.1197 0.0472 0.0551 0.0350 0.0440 0.0150 0.0200 0.0701 0.0807 0.0005 0.0040 0.0034 0.0070 0.0140 0.0285 0.0350 0.0401 0.0830 0.1039 0.0177 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 PIN 1. ANODE 2. NO CONNECTION 3. CATHODE 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 http://www.yeashin.com inches mm 3 REV.02 20120305