INCH POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 September 2001. MIL-PRF-19500/116L 8 June 2001 SUPERSEDING MIL-PRF-19500/116K 28 February 1997 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC JANS1N4148-1 (see 6.4). Device types 1N914 and 1N4531 are inactive for new design. This specification is approved for use by all Departments and Agencies of the Department of Defense. 1. SCOPE 1.1 Scope. This specification covers the performance requirements for silicon, diffused, switching diodes. Three levels of product assurance are provided for each device type as specified in MIL-PRF-19500. Two levels of product assurance are provided for each unencapsulated device. 1.2 Physical dimensions. See figures 1 (similar to DO-35), 2, 3, 4, and 5. 1.3 Maximum ratings. Type 1N914, UR 1N4531, UR 1N4148-1, UR-1 1N4148UB, 1N4148UB2, 1N4148UB2R, 1N4148UBCA, 1N4148UBCC, 1N4148UBCD, TSTG Top ZTJX RTJL RTJC mA IFSM tp = 1/120 s A (pk) qC qC qC/W qC/W qC/W 75 (1) 125 (2) 200 (3) 200 (3) 1 1 2 2 -65 to +200 -65 to +200 -65 to +200 -65 to +200 -65 to +175 -65 to +175 -65 to +200 -65 to +200 70 70 70 70 250 (leaded) 100(UR) N/A N/A N/A 150 V(BR) VRWM Io TA = 25qC V dc V (pk) 100 100 100 100 75 75 75 75 (1) Derate at 0.5 mA/qC above TA = 25qC. (2) Derate at 0.83 mA/qC above TA = 25qC. (3) Derate at 1.14 mA/qC above TA = 25qC. Beneficial comments (recommendations, additions, deletions) and any pertinent data which may be of use in improving this document should be addressed to: Defense Supply Center, Columbus, ATTN: DSCC-VAC, P.O. Box 3990, Columbus, OH 43216-5000, by using the Standardization Document Improvement Proposal (DD Form 1426) appearing at the end of this document or by letter. AMSC N/A DISTRIBUTION STATEMENT A. Approved for public release; distribution is unlimited. FSC 5961 MIL-PRF-19500/116L 1.4 Primary electrical characteristics at TA = +25qC, unless otherwise indicated. Type (1) 1N914 1N4148-1 1N4531 VF1 VF2 IR1 at VR = 20 V dc IR2 at VR = 75 V dc IF mA dc V dc IF mA dc V dc nA dc PA dc 10 10 10 0.8 0.8 0.8 50 100 100 1.2 1.2 1.2 25 25 25 0.5 0.5 0.5 Type (1) IR3 at VR = 20 V dc TA = 150qC PA dc IR4 at VR = 75 V dc TA = 150qC PA dc tfr at Vfr = 5.0 V dc (pk) and IF = 50 mA dc ns ns 35 35 35 75 75 75 20 20 20 5 5 5 1N914 1N4148-1 1N4531 trr (1) Electrical characteristics for surface mount devices are equivalent to the corresponding non-surface mount devices unless otherwise noted. 2. APPLICABLE DOCUMENTS 2.1 General. The documents listed in this section are specified in sections 3 and 4 of this specification. This section does not include documents cited in other sections of this specification or recommended for additional information or as examples. While every effort has been made to ensure the completeness of this list, document users are cautioned that they must meet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 Government documents. 2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a part of this document to the extent specified herein. Unless otherwise specified, the issues of these documents are those listed in the issue of the Department of Defense Index of Specifications and Standards (DoDISS) and supplement thereto, cited in the solicitation (see 6.2). SPECIFICATION DEPARTMENT OF DEFENSE MIL-PRF-19500 - Semiconductor Devices, General Specification for. STANDARD DEPARTMENT OF DEFENSE MIL-STD-750 - Test Methods for Semiconductor Devices. (Unless otherwise indicated, copies of the above specifications, standards, and handbooks are available from the Document Automation and Production Services (DAPS), Building 4D (DPM-DODSSP), 700 Robbins Avenue, Philadelphia, PA 19111-5094.) 2 MIL-PRF-19500/116L Types Dimensions Ltr 1N4148-1 1N914 1N4531 BL BD LL LD BL BD LL LD Inches Min Max .140 .180 .056 .075 1.000 1.500 .018 .022 .080 .120 .050 .075 1.000 1.500 .018 .022 Notes 1, 2 Millimeters Min Max 3.56 4.57 1.42 1.90 25.40 38.10 0.46 0.56 2.03 3.05 1.27 1.90 25.40 38.10 0.46 0.56 3 4 5 4 5 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Ferrule is optional on types 1N4148-1 and 1N4531 for dimension BL. 4. The minimum dimension of BD shall apply over at least .075 (1.90 mm) of dimension BL. 5. The specified lead diameter applies in the zone between .050 (1.27 mm) for 1N914, and 1N4148-1, and .010 (0.25mm) for 1N4531 from the diode body to the end of the lead. Outside of this zone the lead shall not exceed BD. FIGURE 1. Semiconductor device, diode, types 1N914, 1N4148-1, and 1N4531. 3 MIL-PRF-19500/116L Symbol Dimensions Inches BD ECT BL S Min .063 .016 .130 Max .067 .022 .146 .001 min Min 1.60 0.41 3.30 Millimeters Max 1.70 0.55 3.70 0.03 min NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 2. Physical dimensions 1N914UR, 1N4148UR-1, AND 1N4531UR. 4 MIL-PRF-19500/116L 1 3 2 1N4148UBCA 1 1N4148UB 2 3 1 1 3 1N4148UBD 3 2 1N4148UBCC 2 Symbol A A1 B1 B2 B3 D Inches Min Max 0.046 0.056 0.017 0.023 0.016 0.024 0.016 0.024 0.016 0.024 0.085 0.105 Millimeters Min Max 0.97 1.42 0.43 0.58 0.41 0.61 0.41 0.61 0.41 0.61 2.41 2.67 Dimensions Symbol D1 D2 D3 E E3 L1 L2 Inches Min Max 0.071 0.078 Millimeters Min Max 1.81 2.01 0.115 --0.022 0.024 2.82 --0.56 0.61 0.125 0.038 0.036 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Ceramic package only. FIGURE 3. Physical dimensions, surface mount (UB versions). 5 3.18 0.96 0.81 MIL-PRF-19500/116L Symbol A A1 B1 B2 R2 D D1 D2 D3 E E3 L1 R3 R1 Dimensions Millimeters Max Min Max 0.056 0.97 1.42 0.035 0.43 0.89 0.024 0.41 0.61 0.024 0.41 0.61 0.3 0.108 2.41 2.74 0.078 1.81 2.01 0.039 0.89 0.99 0.108 2.41 2.74 0.128 2.82 3.25 0.128 --3.25 0.038 0.56 0.96 0.2R 0.55R Inches Min 0.046 0.017 0.016 0.016 0.012 0.085 0.071 0.035 0.085 0.115 --0.022 0.008R 0.022R Note Typ Typ Typ NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. FIGURE 4. Physical dimensions, surface mount (2 pin UB version). 6 MIL-PRF-19500/116L Dimensions Ltr Inches Millimeters Min Max Min Max A .0059 .0061 .150 .155 B .0130 .0170 .330 .430 NOTES: 1. Dimensions are in inches. 2. Metric equivalents are given for general information only. 3. Element evaluation accomplished utilizing TO-5 package. 4. The physical characteristics of the die are: Metallization: Top (anode): Al. Back (cathode): Au. Al thickness: 25,000 Å minimum. Gold thickness: 4,000 Å minimum. Chip thickness: .010 inches (.25 mm) r.002 inches (.05 mm). FIGURE 5. Physical dimensions, JANHCA and JANKCA die. 7 MIL-PRF-19500/116L 2.3 Order of precedence. In the event of a conflict between the text of this document and the references cited herein the text of this document takes precedence. Nothing in this document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. REQUIREMENTS 3.1 General. The requirements for acquiring the product described herein shall consist of this document and MIL-PRF-19500. 3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML) before contract award (see 4.2 and 6.3). 3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and definitions used herein shall be as specified in MIL-PRF-19500 and as follows. Vfr LS UB UR Forward recovery voltage. Specified maximum forward voltage used to determine forward recovery time. Lead spacing distance between device body and electrical/mechanical contact on lead. Hermetic unleaded 3 terminal (LCC, Leadless Chip Carrier) package type. Unleaded round package type designation. 3.4 Interface and physical dimensions. Interface and physical dimensions shall be as specified in MIL-PRF-19500, and on figures 1, 2, 3, 4, and 5 herein. 3.4.1 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein. Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2). 3.4.2 Diode construction. All devices (except UB version) shall be metallurgically bonded double plug construction in accordance with the requirements of category I, II, or III (see MIL-PRF-19500). The UB package shall be wire bonded, eutectically mounted devices. 3.5 Electrical performance characteristics. Unless otherwise specified herein, the electrical performance characteristics are as specified in 1.3, 1.4, and table I. 3.6 Electrical test requirements. The electrical test requirements shall be the subgroups specified in 4.4.2 and 4.4.3 herein. 3.7 Marking. Marking shall be in accordance with MIL-PRF-19500. At the option of the manufacturer, marking may be omitted from the body, but shall be retained on the initial container. 3.7.1 UR devices. "UR" devices shall be marked with a cathode band only. Initial container package marking shall be in accordance with MIL-PRF-19500. 3.7.2 UB devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification and date code shall be marked on the devices. 3.7.3 UBR devices. The part number may be reduced to J4148, JX4148, or JV4148. Manufacturers identification and date code shall be marked on the devices. 3.8 Polarity. The polarity shall be indicated with a contrasting color band to denote the cathode end. No color coding will be permitted. UB packages do not require polarity marking. 3.9 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 8 MIL-PRF-19500/116L 4. VERIFICATION 4.1 Classification of inspections. The inspection requirements specified herein are classified as follows: a. Qualification inspection (see 4.2). b. Screening (see 4.3). c. Conformance inspection (see 4.4). 4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.2.1 Group E inspection. Group E inspection shall be in accordance with MIL-PRF-19500 and table II herein. 4.3 Screening (JAN, JANTX, and JANTXV levels only). Screening shall be in accordance with table IV of MIL-PRF-19500 and as specified herein. The following measurements shall be made in accordance with table I herein. Devices that exceed the limits of table I herein shall not be acceptable. Screen (see table IV of MIL-PRF-19500) 3a Measurement JANTX and JANTXV levels JAN level Temperature cycling in accordance with MIL-PRF-19500 TX level. Temperature cycling Thermal impedance (see 4.5.5) Thermal impedance (see 4.5.5) 9 Not applicable Not applicable 10 (2) Not applicable Method 1038, condition A, t = 48 hours 11 Not applicable IR1 and VF1 12 Not applicable See 4.3.1, t = 48 hours 13 Not applicable 3c (1) (3) Subgroup 2 of table I herein; 'IR1 = 100 percent of initial reading or 15 nA, whichever is greater; 'VF1 = 25 mV dc. PDA = 10 percent (1) Thermal impedance shall be performed any time after sealing provided temperature cycling is performed in accordance with MIL-PRF-19500, screen 3 prior to this thermal test. (2) Test within 24 hours after removal from test. (3) When thermal impedance is performed prior to screen 13, it is not required to be repeated in screen 13. 4.3.1 Burn-in test conditions. Burn-in conditions are as follows: TA = +30qC r5qC 1N914, 1N914UR TA +30qC r5qC VRWM = 75 V (pk) f = 50 - 60 Hz IO = 75 mA 1N4531, 1N4531UR IO = 125 mA IF = 175 mA min 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UBR2 IO = 200 mA IF = 200 mA min Type 9 IF =150 mA min MIL-PRF-19500/116L 4.4 Conformance inspection. Conformance inspection shall be in accordance with MIL-PRF-19500 and as specified herein. 4.4.1 Group A inspection. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I herein. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein. 4.4.2 Group B inspection. Group B inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VIb (JANTX and JANTXV) of MIL-PRF-19500 and as specified herein. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein except for the thermal impedance test. 4.4.2.1 Group B inspection, table VIb (JANTX, JANTXV) of MIL-PRF-19500. Subgroup Method Conditions B2 2005 IF = 100 mA, axial tensile stress = 8 lbs, TA = +150qC; (not applicable to UR or UB package). (This test shall be performed as the first test of subgroup 2). B3 1027 TA = +30qC r5qC, VRWM = 75 V(pk), f = 50-60 Hz (see 4.5.1); 1N914: IO = 5 mA, 1N4531: IO = 125 mA, 1N4148-1: IO = 200 mA. B4 2075 See 4.5.4 herein. B5 3101 or 4081 RTJL = 250qC/W, .375 inch (9.52 mm) lead length (non-surface mount). RTJL 100qC/W (UR), RTJC = 150qC/W (UB). 4.4.3 Group C inspection. Group C inspection shall be conducted in accordance with the conditions specified for subgroup testing in table VII of MIL-PRF-19500, and as follows. Electrical measurements (end-points) shall be in accordance with Table I, group A, subgroup 2 herein except for the thermal impedance test. Subgroup Method Conditions C2 1056 100 cycles. C2 2036 Tension: Test condition A, t = 15 seconds, weight = 10 pounds. Lead fatigue: Test condition E. Terminal strength and lead fatigue not applicable to UB or UR devices. 1026 TA = +30qC r5qC, VRWM = 75 V(pk), f = 50-60 Hz (see 4.5.1), for: 1N914 IO = 75 mA. 1N4531 IO = 125 mA. 1N4148-1 IO = 200 mA. C6 4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables and as follows. 4.5.1 Pulse measurements. Conditions for pulse measurements shall be specified in section 4 of MIL-STD-750. 4.5.2 Life tests. AC tests shall be conducted with a half-sine wave of the peak voltage specified herein impressed across the diode in the reverse direction, followed by a half-sine waveform of the average rectified current specified herein. The forward conduction angle of the rectified current shall be not greater than 180 degree nor less than 150 degree. 10 MIL-PRF-19500/116L 4.5.3 Forward recovery voltage and time. Forward recovery time shall be measured as the time interval between zero time and the point where the pulse has decreased to 110 percent of the steady-state value of VF when IF = 50 mA dc. The maximum rise time of the response detector shall be 1 ns. 4.5.4 Decap internal visual scribe and break (not applicable to UB package). Scratch glass at cavity area with diamond scribe. Carefully snap open. Using 30X magnification examine the area where die was in contact with the plugs, verify footprint for minimum of 15 percent metallurgical bonding area. In addition, a cross sectional view may be used to verify consistency of construction. A cross sectional view shall be used exclusively for construction verification and shall not be used to verify bond integrity. The UB package shall employ the manufacturers’ normal delidding procedures. 4.5.5 Thermal impedance (ZTJX measurements). Thermal impedance measurements shall be in accordance method 3101 MIL-STD-750, and as follows. a. IH = 300 mA to 500 mA. b. tH = 10 ms. c. IM = 1 mA to 10 mA. d. tMD = 70 Ps maximum. TJX = 70qC/W. The maximum limit for ZTJX under these test conditions is Z 4.5.5.1 For initial qualification or requalification. Read and record data (ZTJX) shall be supplied to the qualifying activity on one lot (random sample of 500 devices minimum) prior to shipment. Twenty two samples shall be serialized and provided to the qualifying activity for test correlation. 4.5.6 Thermal resistance. Thermal resistance measurement shall be in accordance with method 3101 MIL-STD-750, or method 4081 of MIL-STD-750. Forced moving air or draft shall not be permitted across the device during test. The maximum limit for RTJL under these test conditions shall be as shown in group B of 4.4.2.1 and group E of table II. The following conditions shall apply when using method 3101: a. IH - - - - - - - - - - - - - - - - - - - - - - - - - - - 75 mA to 300 mA. b. tH - - - - - - - - - - - - - - - - - - - - - - - - - - - 25 seconds minimum. c. IM - - - - - - - - - - - - - - - - - - - - - - - - - - - 1 mA to 10 mA. d. tMD - - - - - - - - - - - - - - - - - - - - - - - - - - 70 Ps maximum. 11 MIL-PRF-19500/116L 4.5.6.1 Lead spacing for leaded devices: LS = Lead spacing = .375 inch (9.53 mm) as defined on figure 6. FIGURE 6. Mounting conditions. 4.5.6.2 Temperature reference (Tr ) unleaded devices (UB, UR suffix). The temperature reference point shall be the hottest portion of the external surface. As an alternate, the temperature of a stream of liquid used to cool the device during the test may be used as the temperature reference point. 12 MIL-PRF-19500/116L TABLE I. Group A inspection. MIL-STD-750 Inspection 1/ Method Limits Conditions Symbol Min Max Unit Subgroup 1 Visual and mechanical inspection 2071 Subgroup 2 Thermal impedance 3101 See 4.5.5 ZTJX 70 qC/W Forward voltage 4011 IF = 10 mA dc VF1 0.8 V dc Breakdown voltage 4021 IR = 100 PA dc VBR1 Reverse current 4016 DC method VR = 20 V dc IR1 DC method VR = 75 V dc IR2 1N914 1N4531 1N4148-1 Reverse current 4016 Forward voltage 4011 100 V dc 25 25 25 nA dc nA dc nA dc 500 nA dc 1.2 1.2 1.2 V dc V dc V dc VF2 IF = 50 mA dc IF = 100 mA dc IF = 100 mA dc Subgroup 3 TA = +150qC High temperature operation: Reverse current 4016 IR3 1N914 1N4531 1N4148-1 Reverse current DC method VR = 20 V dc 4016 DC method VR = 75 V dc IR4 IF = 10 mA dc VF3 1N914 1N4531 1N4148-1 Forward voltage 4011 1N914 1N4531 1N4148-1 See footnote at end of table. 13 35 PA dc 75 75 75 PA dc PA dc PA dc 0.8 0.8 0.8 V dc V dc V dc MIL-PRF-19500/116L TABLE I. Group A inspection - Continued. MIL-STD-750 Inspection 1/ Method Conditions Symbol Min Limits Max Unit 1.3 1.3 1.3 V dc V dc V dc 4.0 4.0 4.0 pF pF pF Subgroup 3 Continued TA = -55qC Low temperature operation: Forward voltage 4011 VF4 IF = 50 mA dc IF = 100 mA dc IF = 100 mA dc 1N914 1N4531 1N4148-1 Subgroup 4 Junction capacitance 4001 C1 VR = 0 V dc, f = 1 MHz, Vsig = 50 mVp-p maximum 1N914 1N4531 1N4148-1 Junction capacitance 4001 VR = 1.5 V dc, f = 1 MHz, Vsig = 50 mVp-p maximum C2 2.8 pF Reverse recovery time 4031 Condition A C > 1 nF, IF = IR = 10 mA dc, RL = 100: r5% IR(REC) = 1.0 mA dc, R t 1000:. trr 5 ns 1N914 1N4531 1N4148-1 Subgroup 5 Not applicable See footnote at end of table. 14 MIL-PRF-19500/116L TABLE I. Group A inspection - Continued. Inspection 1/ MIL-STD-750 Conditions Method Symbol Limits Min Max Unit Subgroup 6 Surge current 4066 Condition A (sine wave) if(surge) = 1 A (pk) for 1N914 and 1N4531 if(surge) = 2 A (pk) for 1N4148-1, UR and 1N4148UB, IO = maximum rated dc current = 0 VRM = 0 10 surges, 8.3 ms width each, one surge per minute, TA = +25qC or Condition B (square wave) IF(surge) = 0.704 A (pk) for 1N914, 1N4531, and 1N4148UB IF(surge) = 1.41 A (pk) for 1N4148-1 tp = 8.3 ms n = 10 d.f. = 0.0055% TA = 25qC See table I, subgroup 2 Electrical measurements Subgroup 7 Forward recovery voltage and time 4026 IF = 50 mA dc (see 4.5.2) Vfr tfr 1/ For sampling plan, see MIL-PRF-19500. 15 5.0 20 V (pk) ns MIL-PRF-19500/116L TABLE II. Group E inspection (all quality levels) for qualification only. Inspection 1/ MIL-STD-750 Conditions Method Subgroup 1 Thermal shock glass strain) 45 devices c = 0 1056 Electrical measurements 1,000 cycles See table I, subgroup 2 Subgroup 2 Intermittent operating life Sampling plan 45 devices c = 0 1037 Electrical measurements 10,000 cycles See table I, subgroup 2 Subgroup 3 Not applicable Subgroup 4 Thermal resistance surface mount 3101 or 4081 22 devices c=0 22 devices c=0 R4JEC = 100qC/W (maximum) at zero lead length (for UR), R4JEC = 150q C/W (maximum) for UB. (see 4.5.6), +25qC d TR d +35qC Thermal resistance leaded devices 3101 or 4081 R4JEC = 250qC/W (maximum) +25qC d TR d +35qC, (see 4.5.6) tH t 25s in still air. Subgroup 5 Monitored mission temperature cycling Electrical measurements 1055 Not required for UB suffix devices. See table I, subgroup 2 16 MIL-PRF-19500/116L 5. PACKAGING 5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order (see 6.2). When actual packaging of materiel is to be performed by DoD personnel, these personnel need to contact the responsible packaging activity to ascertain requisite packaging requirements. Packaging requirements are maintained by the Inventory Control Point’s packaging activity within the Military Department or Defense Agency, or within the Military Department’s System Command. Packaging data retrieval is available from the managing Military Department’s or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible packaging activity. 6. NOTES (This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.) 6.1 Intended use. The notes specified in MIL-PRF-19500 are applicable to this specification. 6.2 Acquisition requirements. Acquisition documents must specify the following: a. Title, number, and date of this specification. b. Issue of DoDISS to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). c. Packaging requirements (see 5.1). d. Lead finish (see 3.4.1). e. Type designation and product assurance level. 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are, at the time of award of contract, qualified for inclusion in Qualified Manufacturers' List (QML) whether or not such products have actually been so listed by that date. The attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specification. Information pertaining to qualification of products may be obtained from Defense Supply Center, Columbus, ATTN: DSCC/VQE, P.O. Box 3990, Columbus, OH 43216-5000. 6.4 Cross reference substitution information. The JANS version of 1N6638, 1N6642, or 1N6643 (MIL-S-19500/578) is preferred in lieu of the JANS1N4148-1. The JANS 1N6638 or 1N6642 is substitutable for the JANS 1N4148-1 and shall be used in lieu of the JANS1N4148-1. A PIN for PIN replacement table follows, and these devices are directly interchangeable. JANS Non-preferred PIN JANS superseded PIN 1N4148-1 1N6638 1N6642 17 MIL-PRF-19500/116L 6.5 Suppliers of JANHC and JANKC die. The qualified JANHC and JANKC suppliers with the applicable letter version (example JANHCA1N4148) will be identified on the QPL. JANC ordering information PIN Manufacturer 55801 1N4148-1 1N4148-1 JANHCA1N4148 JANKCA1N4148 6.6 Changes from previous issue. Marginal notations are not used in this revision to identify changes with respect to the previous issue due to the extent of the changes. Custodians: Army - CR Navy - NW Air Force - 11 DLA - CC Preparing activity DLA - CC (Project 5961-2422) Review activities: Army - AR, MI, SM Navy - AS, CG, MC Air Force - 19, 99 18 STANDARDIZATION DOCUMENT IMPROVEMENT PROPOSAL INSTRUCTIONS 1. The preparing activity must complete blocks 1, 2, 3, and 8. In block 1, both the document number and revision letter should be given. 2. The submitter of this form must complete blocks 4, 5, 6, and 7. 3. The preparing activity must provide a reply within 30 days from receipt of the form. NOTE: This form may not be used to request copies of documents, nor to request waivers, or clarification of requirements on current contracts. Comments submitted on this form do not constitute or imply authorization to waive any portion of the referenced document(s) or to amend contractual requirements. I RECOMMEND A CHANGE: 1. DOCUMENT NUMBER MIL-PRF-19500/116K 2. DOCUMENT DATE 13 July 2001 3. DOCUMENT TITLE SEMICONDUCTOR DEVICE, DIODE, SILICON, SWITCHING TYPES 1N914, 1N914UR, 1N4148-1, 1N4148UR-1, 1N4148UB, 1N4148UB2, 1N4148UBR2, 1N4531, AND 1N4531UR, JAN, JANTX, JANTXV, JANHC, AND JANKC 4. NATURE OF CHANGE (Identify paragraph number and include proposed rewrite, if possible. Attach extra sheets as needed.) 5. REASON FOR RECOMMENDATION 6. SUBMITTER a. NAME (Last, First, Middle initial) b. ORGANIZATION c. ADDRESS (Include Zip Code) d. TELEPHONE (Include Area Code) COMMERCIAL DSN FAX EMAIL 7. DATE SUBMITTED 8. PREPARING ACTIVITY a. Point of Contact Alan Barone c. ADDRESS Defense Supply Center, Columbus ATTN: DSCC-VAC P.O. Box 3990 Columbus, OH 43216-5000 DD Form 1426, Feb 1999 (EG) b. TELEPHONE Commercial DSN FAX EMAIL 614-692-0510 850-0510 614-692-6939 [email protected] IF YOU DO NOT RECEIVE A REPLY WITHIN 45 DAYS, CONTACT: Defense Standardization Program Office (DLSC-LM) 8725 John J. Kingman, Suite 2533 Fort Belvoir, VA 22060-6221 Telephone (703) 767-6888 DSN 427-6888 Previous editions are obsolete WHS/DIOR, Feb 99