Taychipst BYD13K Controlled avalanche rectifier Datasheet

BYD13D THRU BYD13M
Controlled avalanche rectifiers
200V-1000V
0.750A-1.4A
FEATURES
• Glass passivated
• High maximum operating temperature
• Low leakage current
• Excellent stability
• Guaranteed avalanche energy absorption capability
• Available in ammo-pack.
MECHANICAL DATA
•
•
Cavity free cylindrical glass package
through Implotec(1) technology.
•
This package is hermetically sealed
and fatigue free as coefficients of
expansion of all used parts are
matched.
•
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
SYMBOL
IF(AV)
PARAMETER
average forward current
CONDITIONS
MIN.
MAX.
UNIT
Ttp = 55 °C; lead length = 10 mm;
averaged over any 20 ms period;
see Figs 2 and 4
−
1.40
A
Tamb = 65 °C; PCB mounting
(see Fig.9);
averaged over any 20 ms period;
see Figs 3 and 4
−
0.75
A
IFSM
non-repetitive peak forward current
t = 10 ms half sinewave;
Tj = Tj max prior to surge;
VR = VRRMmax
−
20
ERSM
non-repetitive peak reverse
avalanche energy
L = 120 mH; Tj = Tj max prior to
surge; inductive load switched off
−
7
mJ
Tstg
storage temperature
−65
+175
°C
Tj
junction temperature
−65
+175
°C
see Fig.5
A
ELECTRICAL CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
VF
V(BR)R
IR
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IF = 1 A; Tj = Tj max; see Fig.6
−
−
0.93
V
IF = 1 A; see Fig.6
−
−
1.05
V
BYD13D
225
−
−
V
BYD13G
450
−
−
V
BYD13J
650
−
−
V
BYD13K
900
−
−
V
BYD13M
1 100
−
−
V
VR = VRRMmax; see Fig.7
−
−
1
µA
VR = VRRMmax; Tj = 165 °C; see Fig.7
−
−
100
µA
forward voltage
reverse avalanche
breakdown voltage
reverse current
IR = 0.1 mA
trr
reverse recovery time
when switched from IF = 0.5 A to IR = 1 A;
measured at IR = 0.25 A; see Fig.10
−
3
−
µs
Cd
diode capacitance
VR = 0 V; f = 1 MHz; see Fig.8
−
21
−
pF
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Web Site: www.taychipst.com
BYD13D THRU BYD13M
200V-1000V
Controlled avalanche rectifiers
RATINGS AND CHARACTERISTIC CURVES
0.750A-1.4A
BYD13D THRU BYD13M
1.0
IF(AV)
2.0
IF(AV)
handbook, halfpage
handbook, halfpage
(A)
(A)
1.6
0.8
1.2
0.6
0.8
0.4
0.4
0.2
0
0
0
40
80
120
0
200
160
Ttp (oC)
a = 1.57; VR = VRRMmax; δ = 0.5.
Lead length 10 mm.
Fig.2
40
80
120
160
200
Tamb (oC)
a = 1.57; VR = VRRMmax; δ = 0.5.
Device mounted as shown in Fig.9.
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
2.5
handbook, halfpage
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
200
handbook, halfpage
P
(W)
2.0
a = 3 2.5
Tj
1.57
2
( oC)
1.42
150
1.5
100
1.0
D
G
J
K
M
50
0.5
0
0
0.4
0.8
1.2
I
F(AV)
0
1.6
(A)
0
400
800
1200
VR, VRRM (V)
a = IF(RMS)/IF(AV); VR = VRRMmax; δ = 0.5.
Fig.4
Solid line = VR.
Dotted line = VRRM; δ = 0.5.
Maximum steady state power dissipation
(forward plus leakage current losses,
excluding switching losses) as a function
of average forward current.
E-mail: [email protected]
Fig.5
2 of 3
Maximum permissible junction temperature
as a function of reverse voltage.
Web Site: www.taychipst.com
BYD13D THRU BYD13M
200V-1000V
Controlled avalanche rectifiers
0.750A-1.4A
3
10halfpage
handbook,
6
handbook, halfpage
I
R
(µA)
IF
(A)
4
10 2
2
10
0
1
1
0
2
VF (V)
0
Solid line: Tj = 25 °C.
Dotted line: Tj = 175 °C.
Fig.6
40
80
120
160
200
T (oC)
j
VR = VRRMmax.
Forward current as a function of forward
voltage; maximum values.
Fig.7
Reverse current as a function of junction
temperature; maximum values.
10 2
handbook, halfpage
C
d
(pF)
10
1
1
10
102
V
R
(V)
103
f = 1 MHz; Tj = 25 °C.
Fig.8
Diode capacitance as a function of reverse
voltage; typical values.
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